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MJE13003
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100DA025D .. 2N1011
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2N3250X .. 2N3514
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2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU505F
BU506 .. BUL54A
BUL54AFI .. BUV26
BUV26A .. BUX67B
BUX67C .. C63
C64 .. CDT1313
CDT1315 .. CIL932
CIL997 .. CMPT3646
CMPT3904 .. CS9011I
CS9012 .. CSB834Y
CSB856 .. CSD1168
CSD1168P .. CZT2222A
CZT2907 .. D38S6
D38S7 .. D44U5
D44U6 .. DCP68-25
DCP69 .. DTA115EE
DTA115EEA .. DTC143E
DTC143ECA .. DXT3906
DXT458P5 .. ECG333
ECG334 .. ES3111
ES3112 .. F4
F5 .. FJPF13009
FJPF3305 .. FMMT4401
FMMT4402 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34/15
GFT34/30 .. GT2765
GT2766 .. HA7520
HA7521 .. HMJE3055T
HMPSA06 .. HUN5130
HUN5131 .. JC548
JC548A .. KF2001
KF2002 .. KRA723T
KRA723U .. KRC655E
KRC655U .. KSA539-O
KSA539-R .. KSC2383-Y
KSC2500 .. KSD1616A
KSD1616A-G .. KSR1110
KSR1111 .. KT3146G-9
KT3146V-9 .. KT605AM
KT605B .. KT8117A
KT8117B .. KT841V
KT842A .. KTA1543T
KTA1544T .. KTC5706L
KTC5707D .. MA117
MA1702 .. MF1164
MF3304 .. MJ6302
MJ6308 .. MJE341K
MJE3439 .. MM3906
MM4000 .. MMBT4274
MMBT4275 .. MMUN2116
MMUN2116L .. MP3691
MP3692 .. MPQ5130
MPQ5131 .. MPS6727
MPS6728 .. MRF316
MRF317 .. MUN5316DW
MUN5316DW1 .. NA61U
NA61W .. NB122E
NB122EH .. NB321E
NB321F .. NPS3641
NPS3642 .. NSS1C201LT1G
NSS1C201MZ4T1G .. OC4405
OC443 .. PBSS302PX
PBSS302PZ .. PE3100
PE4010 .. PN3904
PN3904R .. PZT4401
PZT4403 .. RN1116FT
RN1116MFV .. RN2306
RN2307 .. RS7515
RS7526 .. SD2857
SD2857F .. SFT352
SFT353 .. SQ3960
SQ3960F .. ST83003
ST8509 .. SUR546J
SUR547J .. T3003
T3004 .. TI607A
TI610 .. TIP664
TIP665 .. TN3019A
TN3020 .. TP3905R
TP3906 .. UMC2N
UMC3 .. UN6117S
UN6118 .. ZT112
ZT113 .. ZTX326M
ZTX327 .. ZXTN23015CFH
ZXTN25012EFH .. ZXTPS720MC
 
MJE13003 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

MJE13003 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJE13003

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 700

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 9

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF: 21

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of MJE13003 transistor: TO126

MJE13003 Equivalent Transistors - Cross-Reference Search

MJE13003 PDF doc:

1.1. mje13003.pdf Size:107K _onsemi

MJE13003
MJE13003
MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http://onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Features NPN SILICON POWER Reverse Biased SOA with Inductive Loads @ TC = 100_C TRANSISTORS Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C 300 AND 400 VOLTS tc @ 1 A, 100_C is 290 ns (Typ) 700 V Blocking Capability 40 WATTS SOA and Switching Applications Information Pb-Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO(sus) 400 Vdc IIIIIIIIIIII IIII III III TO-225 Collector-Emitter Voltage VCEVIIII Vdc 700 IIIIIIIIIIII IIIIIIIIIIII IIII III III III III CASE 77 Emitter Base Voltage VEBO 9 Vdc STYLE 3 IIIIIIIIIIII

1.2. mje13003.pdf Size:399K _utc

MJE13003
MJE13003
UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR ? DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. ? FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability ? APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits www.unisonic.com.tw 1 of 9 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R204-004.S MJE13003 NPN SILICON TRANSISTOR ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 MJE13003L-x-TA3-T MJE13003G-x-TA3-T TO-220 B C E Tube MJE13003L-x-TM3-T MJE13003G-x-TM3-T TO-251 B C E Tube MJE13003L-x-TMS-T

1.3. mje13003-p.pdf Size:358K _utc

MJE13003
MJE13003
UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR ? DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. ? FEATURES * Reverse biased SOA with inductive load @ Tc=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tc = 290ns @ 1A, 100°C. * 700V blocking capability ? APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 MJE13003L-P-x-T60-K MJE13003G-P-x-T60-K TO-126 B C E Bulk MJE13003L-P-x-T6C-A-K MJE13003G-P-x-T6C-A-K TO-126C E C B Bulk MJE13003L-P-x-T6C-F-K MJE13003G-P-x-T6C-F-K TO-126C B C E Bulk MJE13003L-P-x-T6S-K MJE13003G-P-x-T6S-K TO-126S B C E Bulk MJE13

1.4. mje13003d-p.pdf Size:126K _utc

MJE13003
MJE13003
UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. ? FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Antiparallel Collector-Emitter Diode ? INTERNAL SCHEMATIC DIAGRAM C (2) B (1) E (3) ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13003DL-P-x-T92-B MJE13003DG-P-x-T92-B TO-92 E C B Tape Box MJE13003DL-P-x-T92-K MJE13003DG-P-x-T92-K TO-92 E C B Bulk MJE13003DL-P-x-T92-R MJE13003DG-P-x-T92-R TO-92 E C B Tape Reel www.unisonic.com.tw 1 of 4 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R201-085.c MJE13003D-P Preliminary NPN SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATING

1.5. mje13003-e.pdf Size:274K _utc

MJE13003
MJE13003
UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits. ? FEATURES *Collector-Emitter Sustaining Voltage: VCEO (sus)=300V. *Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A *Switch Time- tf =0.7?s(Max.) @Ic=1.0A. ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13003L-E-x-T6S-K MJE13003G-E-x-T6S-K TO-126S B C E Bulk MJE13003L-E-x-T92-B MJE13003G-E-x-T92-B TO-92 B C E Tape Box MJE13003L-E-x-T92-K MJE13003G-E-x-T92-K TO-92 B C E Bulk MJE13003L-E-x-T92-R MJE13003G-E-x-T92-R TO-92 B C E Tape Reel

1.6. mje13003d.pdf Size:204K _utc

MJE13003
MJE13003
UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. ? FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Antiparallel Collector-Emitter Diode ? INTERNAL SCHEMATIC DIAGRAM C (2) B (1) E (3) ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13003DL-x-TA3-T MJE13003DG-x-TA3-T TO-220 B C E Tube MJE13003DL-x-T60-K MJE13003DG-x-T60-K TO-126 B C E Bulk MJE13003DL-x-T92-B MJE13003DG-x-T92-B TO-92 B C E Tape Box MJE13003DL-x-T92-K MJE13003DG-x-T92-K TO-92 B C E Bulk MJE13003DL-x-T92-R MJE13003DG-x-T92-R TO-92 B C E Tape Reel MJE13003DL-x-T92-A-B MJE13003DG-x-T92-A-B TO-92 E C B Tape Box MJE13003DL-x-T92-A-

1.7. mje13003.pdf Size:53K _kec

MJE13003
MJE13003
SEMICONDUCTOR MJE13003 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A B HIGH VOLTAGE AND HIGH SPEED D C SWITCHING APPLICATION. E F FEATURES ·Excellent Switching Times G : ton=1.1? S(Max.), at IC=1A S(Max.), tf=0.7? H ·High Collector Voltage : VCBO=700V. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 _ + F 11.0 0.3 MAXIMUM RATING (Ta=25?) G 2.9 MAX M H 1.0 MAX CHARACTERISTIC SYMBOL RATING UNIT J 1.9 MAX O + _ K 0.75 0.15 N P VCBO Collector-Base Voltage 700 V _ + L 15.50 0.5 1 2 3 _ + M 2.3 0.1 VCEO Collector-Emitter Voltage 400 V _ + N 0.65 0.15 O 1.6 1. EMITTER VEBO Emitter-Base Voltage 9 V P 3.4 MAX 2. COLLECTOR 3. BASE IC DC 1.5 Collector Current A ICP Pulse 3 TO-126 IB Base Current 0.75 A 1.5 Ta=25? Collector Power PC W Dissipation 20 Tc=25? Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?)

1.8. mje13003hv.pdf Size:41K _kec

MJE13003
MJE13003
SEMICONDUCTOR MJE13003HV TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A HIGH VOLTAGE AND HIGH SPEED B D C SWITCHING APPLICATION. E F FEATURES Excellent Switching Times G : ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1A H High Collector Voltage : VCBO=900V. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 _ + F 11.0 0.3 MAXIMUM RATING (Ta=25 ) G 2.9 MAX M H 1.0 MAX CHARACTERISTIC SYMBOL RATING UNIT J 1.9 MAX O _ + K 0.75 0.15 N VCBO Collector-Base Voltage 900 V P _ + L 15.50 0.5 1 2 3 _ + M 2.3 0.1 VCEO Collector-Emitter Voltage 530 V _ + N 0.65 0.15 O 1.6 1. EMITTER VEBO Emitter-Base Voltage 9 V P 3.4 MAX 2. COLLECTOR 3. BASE IC DC 1.5 Collector Current A ICP Pulse 3 TO-126 IB Base Current 0.75 A PC 20 W Collector Power Dissipation (Tc=25 ) Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TE

1.9. mje13003.pdf Size:169K _inchange_semiconductor

MJE13003
MJE13003
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE13003 Ў¤ Absolute maximum ratings (Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg IN Collector-base voltage Collector-emitter voltage PARAMETER Emitter-base voltage Collector current (DC) Collector current-Peak CHA E SEM NG Open base Open emitter Open collector OND IC CONDITIONS TOR UC VALUE 700 400 9 1.5 3 0.75 1.5 2.25 4.5 UNIT V V V A A A A A A W Base current Base current-Peak Emitter current Emitter current-Peak Ta=25Ўж Total power dissipation TC=25Ўж Junction temperature Storage tempera

1.10. mje13003d.pdf Size:128K _inchange_semiconductor

MJE13003
MJE13003
INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide Area of Safe Operation APPLICATIONS ·Fluorescent lamp ·Electronic ballast ·Electronic transformer ·Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 2 A Collector Power Dissipation PC @TC=25? 40 W Junction Temperature 150 ? Tj Storage Temperature -65~150 ? Tstg INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;IBB= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 9 V Collector-Emitter Saturation Voltage IC=

1.11. mje13003b.pdf Size:178K _wietron

MJE13003
MJE13003
WEITRON MJE13003B High Voltage Fast-switching COLLECTOR 2. NPN Power Transistor P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE DESCRIPTION: 1. The device is manufactured using high voltage EMITTER TO-92 Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The MJE13003B is designed for use in compact fluorescent lamp application. FEATURE: * Medium Voltage Capability * Low Spread Of Dynamic Parameters * Minimum Lot-to-lot Spread For Reliable Operation * Very High Switching Speed APPLICATIONS: * Electronic Ballasts For Fluorescent Lighting ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Collector-Emitter Voltage (VBE = 0) VCES 700 V Collector-Emitter Voltage (IB = 0) VCEO 400 V Emitter-Base Voltage (I = 0) V 9 V C EBO Collector Current I 1 A C Collector Peak Current (t <

1.12. hmje13003d.pdf Size:51K _hsmc

MJE13003
MJE13003
Spec. No. : HD200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.09.04 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch TO-126ML • Switch Regulators • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (T =25°C) A • Maximum Temperatures Storage Temperature.............................................................................................................................................. -50 ~ +150 °C Junction Temperature........................................................................................................................................ 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (T =25°C)....................................................................................................................................... 40

1.13. hmje13003.pdf Size:140K _hsmc

MJE13003
MJE13003
Spec. No. : HT200210 HI-SINCERITY Issued Date : 2001.01.01 Revised Date : 2010.03.16 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls TO-126 • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C).................................................................................................................... 20 W • Maximum Voltages and Currents (TA=25°C) VCBO Colle

1.14. hmje13003e.pdf Size:83K _hsmc

MJE13003
MJE13003
Spec. No. : HE200502 HI-SINCERITY Issued Date : 2005.10.01 Revised Date : 2009.10.14 MICROELECTRONICS CORP. Page No. : 1/4 HMJE13003E NPN Epitaxial Planar Transistor Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls TO-220 • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C).................................................................................................................... 35 W • Maximum Voltages and Currents (TA=25°C) VCEX Coll

1.15. mje13003.pdf Size:430K _sisemi

MJE13003
MJE13003
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13003 NPN MJE /MJE SERIES TRANSISTORS MJE13003 RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS ●FEATURES FEATURES FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 ●APPLICATION ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION APPLICATION APPLICATION: Tc=25°C Tc=25°C ●最大额定值(Tc=25°C Tc=25°C) Absolute Maximum Ratings Tc=25°C TO-126/126S/251/2

1.16. mje13003b.pdf Size:206K _sisemi

MJE13003
MJE13003
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13003B NPN MJE /MJE SERIES TRANSISTORS MJE13003B RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS ●FEATURES FEATURES FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 开关电源 APPLICATION: APPLICATION: ●APPLICATION: ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION: ■SWITCH MODE POWER SUPPLY Tc=25°C Tc=25°C ● 最大额定值(Tc=25°C Tc=25°C) Abs

1.17. mje13003ht_1.pdf Size:212K _sisemi

MJE13003
MJE13003
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN 系列晶体管/ MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT ● : RoHS ● : RoHS ● : 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范 ●特点: RoHS ●FEATURES ●FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●FEATURES ●FEATURES ● : ● : ● : 充电器 节能灯 电子镇流器 ●应用: ●APPLICATION: ●APPLICATION: ●APPLICATION: ■RECHARGER ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ●APPLICATION: Ta=25°C Ta=25°C ●最大额定值(Ta=25°C

1.18. mje13003_2.pdf Size:233K _sisemi

MJE13003
MJE13003
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13003 NPN MJE /MJE SERIES TRANSISTORS MJE13003 RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS FEATURES FEATURES ●FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 APPLICATION APPLICATION ●APPLICATION ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION: Tc=25°C Tc=25°C ●最大额定值(Tc=25°C Tc=25°C) Absolute Maximum Ratings Tc=25° TO-220/220S/262/26

1.19. mje13003d_1.pdf Size:232K _sisemi

MJE13003
MJE13003
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13003D NPN D / D SERIES TRANSISTORS MJE13003D NPN D 系列晶体管/ D SERIES TRANSISTORS MJE13003D NPN D / D SERIES TRANSISTORS MJE13003D RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS ●FEATURES FEATURES FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 开关电源 ●APPLICATION: ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION: APPLICATION: APPLICATION: ■SWITCH MODE POWER SUPPLY Tc=25° Tc=25°C ●最大额定值(Tc=25°C Tc=25°C C) Absolute Maxim

1.20. mje13003d.pdf Size:477K _sisemi

MJE13003
MJE13003
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13003D NPN D / D SERIES TRANSISTORS MJE13003D NPN D 系列晶体管/ D SERIES TRANSISTORS MJE13003D NPN D / D SERIES TRANSISTORS MJE13003D RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS FEATURES FEATURES ●FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 开关电源 APPLICATION: APPLICATION: ●APPLICATION: ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION: ■SWITCH MODE POWER SUPPLY Tc=25° Tc=25°C ●最大额定值(Tc=25°C Tc=25°C C) Absolute Maxim

1.21. mje13003br.pdf Size:385K _sisemi

MJE13003
MJE13003
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR NPN MJE /MJE SERIES TRANSISTORS MJE13003BR NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13003BR NPN MJE /MJE SERIES TRANSISTORS MJE13003BR RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS ●FEATURES FEATURES FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 APPLICATION APPLICATION ●APPLICATION APPLICATION:■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER Tc=25°C Tc=25°C ● 最大额定值(Tc=25°C Tc=25°C) Absolute Maximum Ratings Tc=25°C TO-126/12

1.22. mje13003brh.pdf Size:385K _sisemi

MJE13003
MJE13003
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS ●FEATURES FEATURES FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 ●APPLICATION: ■FLUORESCENT LAMP ■ELECTRONIC BALLAST APPLICATION: APPLICATION: APPLICATION: Tc=25°C Tc=25°C ●最大额定值(Tc=25°C Tc=25°C) Absolute Maximum Ratings Tc=25°C TO-126/126S Absolute Maximum Ratings

1.23. mje13003ht.pdf Size:550K _sisemi

MJE13003
MJE13003
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN 系列晶体管/ MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT ● : RoHS ● : RoHS ● : 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范 ●特点: RoHS ●FEATURES ●FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●FEATURES ●FEATURES ● : ● : ● : 充电器 节能灯 电子镇流器 ●应用: ● ●APPLICATION: ●APPLICATION: ■RECHARGER ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ●APPLICATION: APPLICATION: Ta=25°C Ta=25°C ●最大额定值(Ta=25°

See also transistors datasheet: MJE1100 , MJE1101 , MJE1102 , MJE1103 , MJE12007 , MJE1290 , MJE1291 , MJE13002 , TIP41 , MJE13004 , MJE13005 , MJE13006 , MJE13007 , MJE13007A , MJE13008 , MJE13009 , MJE13070 .

Keywords

 MJE13003 Datasheet  MJE13003 Datenblatt  MJE13003 RoHS  MJE13003 Distributor
 MJE13003 Application Notes  MJE13003 Component  MJE13003 Circuit  MJE13003 Schematic
 MJE13003 Equivalent  MJE13003 Cross Reference  MJE13003 Data Sheet  MJE13003 Fiche Technique

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