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MJE13003 Transistor (IC) Datasheet. Cross Reference Search. MJE13003 Equivalent

Type Designator: MJE13003

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 700

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 9

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF: 21

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of MJE13003 transistor: TO126

MJE13003 Transistor Equivalent Substitute - Cross-Reference Search

 

MJE13003 PDF:

1.1. mje13003.pdf Size:107K _onsemi

MJE13003
MJE13003

MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http://onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Feature

1.2. mje13003-e.pdf Size:274K _utc

MJE13003
MJE13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control

1.3. mje13003d-p.pdf Size:126K _utc

MJE13003
MJE13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. ? FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low

1.4. mje13003d.pdf Size:204K _utc

MJE13003
MJE13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. ? FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High

1.5. mje13003.pdf Size:399K _utc

MJE13003
MJE13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR ? DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. ? FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive s

1.6. mje13003-p.pdf Size:358K _utc

MJE13003
MJE13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR ? DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. ? FEATURES * Reverse biased SOA with inductive load @ Tc=100°C * Induct

1.7. mje13003.pdf Size:53K _kec

MJE13003
MJE13003

SEMICONDUCTOR MJE13003 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A B HIGH VOLTAGE AND HIGH SPEED D C SWITCHING APPLICATION. E F FEATURES ·Excellent Switching Times G : ton=1.1? S(Max.), at IC=1A S(Max.), tf=0.7? H ·High Collector Voltage : VCBO=700V. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 _ + F 11.0 0.

1.8. mje13003hv.pdf Size:41K _kec

MJE13003
MJE13003

SEMICONDUCTOR MJE13003HV TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A HIGH VOLTAGE AND HIGH SPEED B D C SWITCHING APPLICATION. E F FEATURES Excellent Switching Times G : ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1A H High Collector Voltage : VCBO=900V. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 _ + F 11.0 0.3 MAXI

1.9. mje13003d.pdf Size:128K _inchange_semiconductor

MJE13003
MJE13003

INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide Area of Safe Operation APPLICATIONS ·Fluorescent lamp ·Electronic ballast ·Electronic transformer ·Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V

1.10. mje13003.pdf Size:169K _inchange_semiconductor

MJE13003
MJE13003

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter

1.11. mje13003b.pdf Size:178K _wietron

MJE13003
MJE13003

WEITRON MJE13003B High Voltage Fast-switching COLLECTOR 2. NPN Power Transistor P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE DESCRIPTION: 1. The device is manufactured using high voltage EMITTER TO-92 Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhanc

1.12. hmje13003d.pdf Size:51K _hsmc

MJE13003
MJE13003

Spec. No. : HD200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.09.04 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch TO-126ML • Switch Regulators • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (T

1.13. hmje13003.pdf Size:140K _hsmc

MJE13003
MJE13003

Spec. No. : HT200210 HI-SINCERITY Issued Date : 2001.01.01 Revised Date : 2010.03.16 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls TO-126 • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (TA=2

1.14. hmje13003e.pdf Size:83K _hsmc

MJE13003
MJE13003

Spec. No. : HE200502 HI-SINCERITY Issued Date : 2005.10.01 Revised Date : 2009.10.14 MICROELECTRONICS CORP. Page No. : 1/4 HMJE13003E NPN Epitaxial Planar Transistor Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls TO-220 • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (TA=

1.15. mje13003br.pdf Size:385K _sisemi

MJE13003
MJE13003

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR NPN MJE /MJE SERIES TRANSISTORS MJE13003BR NPN MJE 系

1.16. mje13003b.pdf Size:206K _sisemi

MJE13003
MJE13003

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE 系列

1.17. mje13003brh.pdf Size:385K _sisemi

MJE13003
MJE13003

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJ

1.18. mje13003d_1.pdf Size:232K _sisemi

MJE13003
MJE13003

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13003D NPN D / D SERIES TRANSISTORS MJE13003D NPN D 系列晶体

1.19. mje13003_2.pdf Size:233K _sisemi

MJE13003
MJE13003

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE 系列

1.20. mje13003d.pdf Size:477K _sisemi

MJE13003
MJE13003

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13003D NPN D / D SERIES TRANSISTORS MJE13003D NPN D 系列晶体

1.21. mje13003ht_1.pdf Size:212K _sisemi

MJE13003
MJE13003

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJ

1.22. mje13003.pdf Size:430K _sisemi

MJE13003
MJE13003

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE 系列

1.23. mje13003ht.pdf Size:550K _sisemi

MJE13003
MJE13003

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJ

1.24. mje13003t.pdf Size:169K _first_silicon

MJE13003
MJE13003

SEMICONDUCTOR MJE13003T TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. D FEATURES E A Excellent Switching Times : ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1.5A C F G DIM MILLIMETERS High Collector Voltage : VCBO=700V. B A 8.3 MAX B 11.3±0.3 C 4.15 TYP 1 2 3 D 3.2±0.2 E 2.0±0.2 H F 2.8±0.1 I G 3.2±0.1 MAXIMUM RA

1.25. mje13003_to126.pdf Size:98K _first_silicon

MJE13003
MJE13003

SEMICONDUCTOR MJE13003 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. TO-126 FEATURES Excellent Switching Times : ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1.5A 1.BASE High Collector Voltage : VCBO=700V. 2.COLLECTOR 3.EMITTER MAXIMUM RATING (Ta=25˚C) 1 2 3 CHARACTERISTIC SYMBOL RATING UNIT VC

1.26. mje13003b.pdf Size:77K _first_silicon

MJE13003
MJE13003

SEMICONDUCTOR MJE13003B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS : ton=0.5μS(Max.), tf=0.7μS(Max.), at IC=1A A 4 70 MAX E K B 4 80 MAX High Collector Voltage : VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _ MA

1.27. mje13003i.pdf Size:205K _first_silicon

MJE13003
MJE13003

SEMICONDUCTOR MJE13003I TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. DIM MILLIMETERS A 2.20 ± 0.2 B 1.50 ± 0.15 FEATURES c 0.5 ± 0.07 Excellent Switching Times D 6.50 ± 0.15 1 2 3 : ton=1.1μS(Max.), tf=0.5μS(Max.), at IC=1.0A e 2.30 typ L 7.70 ± 0.2 High Collector Voltage : VCBO=700V. A1 1.20 ± 0.05 b1 0.8 ± 0.1

1.28. mje13003d.pdf Size:299K _first_silicon

MJE13003
MJE13003

SEMICONDUCTOR MJE13003D TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. A I C J FEATURES Excellent Switching Times : ton=1.1μS(Max.), tf=0.5μS(Max.), at IC=1.0A DIM MILLIMETERS A 6 50 ± 0 2 High Collector Voltage : VCBO=700V. B 5 60 ± 0 2 C 5 20 ± 0 2 D 1 50 ± 0 2 MAXIMUM RATING (Ta=25˚C) E 2 70 ± 0 2 F 2 30 ± 0 1

1.29. mje13003a.pdf Size:97K _first_silicon

MJE13003
MJE13003

SEMICONDUCTOR MJE13003A TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS : ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1.5A A 4 70 MAX E K B 4 80 MAX High Collector Voltage : VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _

See also transistors datasheet: MJE1100 , MJE1101 , MJE1102 , MJE1103 , MJE12007 , MJE1290 , MJE1291 , MJE13002 , TIP41 , MJE13004 , MJE13005 , MJE13006 , MJE13007 , MJE13007A , MJE13008 , MJE13009 , MJE13070 .

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