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MJE13003
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100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
MJE13003 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

MJE13003 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJE13003

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 700

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 9

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF: 21

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of MJE13003 transistor: TO126

MJE13003 Equivalent Transistors - Cross-Reference Search

MJE13003 PDF doc:

1.1. mje13003.pdf Size:107K _onsemi

MJE13003
MJE13003
MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http://onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Features NPN SILICON POWER Reverse Biased SOA with Inductive Loads @ TC = 100_C TRANSISTORS Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C 300 AND 400 VOLTS tc @ 1 A, 100_C is 290 ns (Typ) 700 V Blocking Capability 40 WATTS SOA and Switching Applications Information Pb-Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO(sus) 400 Vdc IIIIIIIIIIII IIII III III TO-225 Collector-Emitter Voltage VCEVIIII Vdc 700 IIIIIIIIIIII IIIIIIIIIIII IIII III III III III CASE 77 Emitter Base Voltage VEBO 9 Vdc STYLE 3 IIIIIIIIIIII

1.2. mje13003.pdf Size:399K _utc

MJE13003
MJE13003
UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR ? DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. ? FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability ? APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits www.unisonic.com.tw 1 of 9 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R204-004.S MJE13003 NPN SILICON TRANSISTOR ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 MJE13003L-x-TA3-T MJE13003G-x-TA3-T TO-220 B C E Tube MJE13003L-x-TM3-T MJE13003G-x-TM3-T TO-251 B C E Tube MJE13003L-x-TMS-T

1.3. mje13003-p.pdf Size:358K _utc

MJE13003
MJE13003
UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR ? DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. ? FEATURES * Reverse biased SOA with inductive load @ Tc=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tc = 290ns @ 1A, 100°C. * 700V blocking capability ? APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 MJE13003L-P-x-T60-K MJE13003G-P-x-T60-K TO-126 B C E Bulk MJE13003L-P-x-T6C-A-K MJE13003G-P-x-T6C-A-K TO-126C E C B Bulk MJE13003L-P-x-T6C-F-K MJE13003G-P-x-T6C-F-K TO-126C B C E Bulk MJE13003L-P-x-T6S-K MJE13003G-P-x-T6S-K TO-126S B C E Bulk MJE13

1.4. mje13003d-p.pdf Size:126K _utc

MJE13003
MJE13003
UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. ? FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Antiparallel Collector-Emitter Diode ? INTERNAL SCHEMATIC DIAGRAM C (2) B (1) E (3) ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13003DL-P-x-T92-B MJE13003DG-P-x-T92-B TO-92 E C B Tape Box MJE13003DL-P-x-T92-K MJE13003DG-P-x-T92-K TO-92 E C B Bulk MJE13003DL-P-x-T92-R MJE13003DG-P-x-T92-R TO-92 E C B Tape Reel www.unisonic.com.tw 1 of 4 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R201-085.c MJE13003D-P Preliminary NPN SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATING

1.5. mje13003-e.pdf Size:274K _utc

MJE13003
MJE13003
UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits. ? FEATURES *Collector-Emitter Sustaining Voltage: VCEO (sus)=300V. *Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A *Switch Time- tf =0.7?s(Max.) @Ic=1.0A. ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13003L-E-x-T6S-K MJE13003G-E-x-T6S-K TO-126S B C E Bulk MJE13003L-E-x-T92-B MJE13003G-E-x-T92-B TO-92 B C E Tape Box MJE13003L-E-x-T92-K MJE13003G-E-x-T92-K TO-92 B C E Bulk MJE13003L-E-x-T92-R MJE13003G-E-x-T92-R TO-92 B C E Tape Reel

1.6. mje13003d.pdf Size:204K _utc

MJE13003
MJE13003
UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. ? FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Antiparallel Collector-Emitter Diode ? INTERNAL SCHEMATIC DIAGRAM C (2) B (1) E (3) ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13003DL-x-TA3-T MJE13003DG-x-TA3-T TO-220 B C E Tube MJE13003DL-x-T60-K MJE13003DG-x-T60-K TO-126 B C E Bulk MJE13003DL-x-T92-B MJE13003DG-x-T92-B TO-92 B C E Tape Box MJE13003DL-x-T92-K MJE13003DG-x-T92-K TO-92 B C E Bulk MJE13003DL-x-T92-R MJE13003DG-x-T92-R TO-92 B C E Tape Reel MJE13003DL-x-T92-A-B MJE13003DG-x-T92-A-B TO-92 E C B Tape Box MJE13003DL-x-T92-A-

1.7. mje13003.pdf Size:53K _kec

MJE13003
MJE13003
SEMICONDUCTOR MJE13003 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A B HIGH VOLTAGE AND HIGH SPEED D C SWITCHING APPLICATION. E F FEATURES ·Excellent Switching Times G : ton=1.1? S(Max.), at IC=1A S(Max.), tf=0.7? H ·High Collector Voltage : VCBO=700V. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 _ + F 11.0 0.3 MAXIMUM RATING (Ta=25?) G 2.9 MAX M H 1.0 MAX CHARACTERISTIC SYMBOL RATING UNIT J 1.9 MAX O + _ K 0.75 0.15 N P VCBO Collector-Base Voltage 700 V _ + L 15.50 0.5 1 2 3 _ + M 2.3 0.1 VCEO Collector-Emitter Voltage 400 V _ + N 0.65 0.15 O 1.6 1. EMITTER VEBO Emitter-Base Voltage 9 V P 3.4 MAX 2. COLLECTOR 3. BASE IC DC 1.5 Collector Current A ICP Pulse 3 TO-126 IB Base Current 0.75 A 1.5 Ta=25? Collector Power PC W Dissipation 20 Tc=25? Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?)

1.8. mje13003hv.pdf Size:41K _kec

MJE13003
MJE13003
SEMICONDUCTOR MJE13003HV TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A HIGH VOLTAGE AND HIGH SPEED B D C SWITCHING APPLICATION. E F FEATURES Excellent Switching Times G : ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1A H High Collector Voltage : VCBO=900V. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 _ + F 11.0 0.3 MAXIMUM RATING (Ta=25 ) G 2.9 MAX M H 1.0 MAX CHARACTERISTIC SYMBOL RATING UNIT J 1.9 MAX O _ + K 0.75 0.15 N VCBO Collector-Base Voltage 900 V P _ + L 15.50 0.5 1 2 3 _ + M 2.3 0.1 VCEO Collector-Emitter Voltage 530 V _ + N 0.65 0.15 O 1.6 1. EMITTER VEBO Emitter-Base Voltage 9 V P 3.4 MAX 2. COLLECTOR 3. BASE IC DC 1.5 Collector Current A ICP Pulse 3 TO-126 IB Base Current 0.75 A PC 20 W Collector Power Dissipation (Tc=25 ) Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TE

1.9. mje13003.pdf Size:169K _inchange_semiconductor

MJE13003
MJE13003
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE13003 Ў¤ Absolute maximum ratings (Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg IN Collector-base voltage Collector-emitter voltage PARAMETER Emitter-base voltage Collector current (DC) Collector current-Peak CHA E SEM NG Open base Open emitter Open collector OND IC CONDITIONS TOR UC VALUE 700 400 9 1.5 3 0.75 1.5 2.25 4.5 UNIT V V V A A A A A A W Base current Base current-Peak Emitter current Emitter current-Peak Ta=25Ўж Total power dissipation TC=25Ўж Junction temperature Storage tempera

1.10. mje13003d.pdf Size:128K _inchange_semiconductor

MJE13003
MJE13003
INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide Area of Safe Operation APPLICATIONS ·Fluorescent lamp ·Electronic ballast ·Electronic transformer ·Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 2 A Collector Power Dissipation PC @TC=25? 40 W Junction Temperature 150 ? Tj Storage Temperature -65~150 ? Tstg INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;IBB= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 9 V Collector-Emitter Saturation Voltage IC=

1.11. mje13003b.pdf Size:178K _wietron

MJE13003
MJE13003
WEITRON MJE13003B High Voltage Fast-switching COLLECTOR 2. NPN Power Transistor P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE DESCRIPTION: 1. The device is manufactured using high voltage EMITTER TO-92 Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The MJE13003B is designed for use in compact fluorescent lamp application. FEATURE: * Medium Voltage Capability * Low Spread Of Dynamic Parameters * Minimum Lot-to-lot Spread For Reliable Operation * Very High Switching Speed APPLICATIONS: * Electronic Ballasts For Fluorescent Lighting ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Collector-Emitter Voltage (VBE = 0) VCES 700 V Collector-Emitter Voltage (IB = 0) VCEO 400 V Emitter-Base Voltage (I = 0) V 9 V C EBO Collector Current I 1 A C Collector Peak Current (t <

1.12. hmje13003d.pdf Size:51K _hsmc

MJE13003
MJE13003
Spec. No. : HD200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.09.04 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch TO-126ML • Switch Regulators • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (T =25°C) A • Maximum Temperatures Storage Temperature.............................................................................................................................................. -50 ~ +150 °C Junction Temperature........................................................................................................................................ 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (T =25°C)....................................................................................................................................... 40

1.13. hmje13003.pdf Size:140K _hsmc

MJE13003
MJE13003
Spec. No. : HT200210 HI-SINCERITY Issued Date : 2001.01.01 Revised Date : 2010.03.16 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls TO-126 • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C).................................................................................................................... 20 W • Maximum Voltages and Currents (TA=25°C) VCBO Colle

1.14. hmje13003e.pdf Size:83K _hsmc

MJE13003
MJE13003
Spec. No. : HE200502 HI-SINCERITY Issued Date : 2005.10.01 Revised Date : 2009.10.14 MICROELECTRONICS CORP. Page No. : 1/4 HMJE13003E NPN Epitaxial Planar Transistor Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls TO-220 • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C).................................................................................................................... 35 W • Maximum Voltages and Currents (TA=25°C) VCEX Coll

1.15. mje13003.pdf Size:430K _sisemi

MJE13003
MJE13003
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13003 NPN MJE /MJE SERIES TRANSISTORS MJE13003 RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS ●FEATURES FEATURES FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 ●APPLICATION ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION APPLICATION APPLICATION: Tc=25°C Tc=25°C ●最大额定值(Tc=25°C Tc=25°C) Absolute Maximum Ratings Tc=25°C TO-126/126S/251/2

1.16. mje13003b.pdf Size:206K _sisemi

MJE13003
MJE13003
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13003B NPN MJE /MJE SERIES TRANSISTORS MJE13003B RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS ●FEATURES FEATURES FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 开关电源 APPLICATION: APPLICATION: ●APPLICATION: ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION: ■SWITCH MODE POWER SUPPLY Tc=25°C Tc=25°C ● 最大额定值(Tc=25°C Tc=25°C) Abs

1.17. mje13003ht_1.pdf Size:212K _sisemi

MJE13003
MJE13003
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN 系列晶体管/ MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT ● : RoHS ● : RoHS ● : 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范 ●特点: RoHS ●FEATURES ●FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●FEATURES ●FEATURES ● : ● : ● : 充电器 节能灯 电子镇流器 ●应用: ●APPLICATION: ●APPLICATION: ●APPLICATION: ■RECHARGER ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ●APPLICATION: Ta=25°C Ta=25°C ●最大额定值(Ta=25°C

1.18. mje13003_2.pdf Size:233K _sisemi

MJE13003
MJE13003
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13003 NPN MJE /MJE SERIES TRANSISTORS MJE13003 RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS FEATURES FEATURES ●FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 APPLICATION APPLICATION ●APPLICATION ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION: Tc=25°C Tc=25°C ●最大额定值(Tc=25°C Tc=25°C) Absolute Maximum Ratings Tc=25° TO-220/220S/262/26

1.19. mje13003d_1.pdf Size:232K _sisemi

MJE13003
MJE13003
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13003D NPN D / D SERIES TRANSISTORS MJE13003D NPN D 系列晶体管/ D SERIES TRANSISTORS MJE13003D NPN D / D SERIES TRANSISTORS MJE13003D RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS ●FEATURES FEATURES FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 开关电源 ●APPLICATION: ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION: APPLICATION: APPLICATION: ■SWITCH MODE POWER SUPPLY Tc=25° Tc=25°C ●最大额定值(Tc=25°C Tc=25°C C) Absolute Maxim

1.20. mje13003d.pdf Size:477K _sisemi

MJE13003
MJE13003
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13003D NPN D / D SERIES TRANSISTORS MJE13003D NPN D 系列晶体管/ D SERIES TRANSISTORS MJE13003D NPN D / D SERIES TRANSISTORS MJE13003D RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS FEATURES FEATURES ●FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 开关电源 APPLICATION: APPLICATION: ●APPLICATION: ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION: ■SWITCH MODE POWER SUPPLY Tc=25° Tc=25°C ●最大额定值(Tc=25°C Tc=25°C C) Absolute Maxim

1.21. mje13003br.pdf Size:385K _sisemi

MJE13003
MJE13003
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR NPN MJE /MJE SERIES TRANSISTORS MJE13003BR NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13003BR NPN MJE /MJE SERIES TRANSISTORS MJE13003BR RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS ●FEATURES FEATURES FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 APPLICATION APPLICATION ●APPLICATION APPLICATION:■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER Tc=25°C Tc=25°C ● 最大额定值(Tc=25°C Tc=25°C) Absolute Maximum Ratings Tc=25°C TO-126/12

1.22. mje13003brh.pdf Size:385K _sisemi

MJE13003
MJE13003
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS ●FEATURES FEATURES FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 ●APPLICATION: ■FLUORESCENT LAMP ■ELECTRONIC BALLAST APPLICATION: APPLICATION: APPLICATION: Tc=25°C Tc=25°C ●最大额定值(Tc=25°C Tc=25°C) Absolute Maximum Ratings Tc=25°C TO-126/126S Absolute Maximum Ratings

1.23. mje13003ht.pdf Size:550K _sisemi

MJE13003
MJE13003
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN 系列晶体管/ MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT ● : RoHS ● : RoHS ● : 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范 ●特点: RoHS ●FEATURES ●FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●FEATURES ●FEATURES ● : ● : ● : 充电器 节能灯 电子镇流器 ●应用: ● ●APPLICATION: ●APPLICATION: ■RECHARGER ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ●APPLICATION: APPLICATION: Ta=25°C Ta=25°C ●最大额定值(Ta=25°

See also transistors datasheet: MJE1100 , MJE1101 , MJE1102 , MJE1103 , MJE12007 , MJE1290 , MJE1291 , MJE13002 , TIP41 , MJE13004 , MJE13005 , MJE13006 , MJE13007 , MJE13007A , MJE13008 , MJE13009 , MJE13070 .

Keywords

 MJE13003 Datasheet  MJE13003 Datenblatt  MJE13003 RoHS  MJE13003 Distributor
 MJE13003 Application Notes  MJE13003 Component  MJE13003 Circuit  MJE13003 Schematic
 MJE13003 Equivalent  MJE13003 Cross Reference  MJE13003 Data Sheet  MJE13003 Fiche Technique

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