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MJE13005
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TIP51 .. TK35
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TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
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MJE13005 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

MJE13005 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJE13005

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 75

Maximum collector-base voltage |Ucb|, V: 700

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 9

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF: 65

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of MJE13005 transistor: TO220

MJE13005 Equivalent Transistors - Cross-Reference Search

MJE13005 PDF doc:

1.1. mje13005.pdf Size:311K _motorola

MJE13005
MJE13005
Order this document MOTOROLA by MJE13005/D SEMICONDUCTOR TECHNICAL DATA * MJE13005 *Motorola Preferred Device Designer's? Data Sheet 4 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS These devices are designed for highvoltage, highspeed power switching 75 WATTS inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: VCEO(sus) 400 V Reverse Bias SOA with Inductive Loads @ TC = 100_C Inductive Switching Matrix 2 to 4 Amp, 25 and 100_C . . . tc @ 3A, 100_C is 180 ns (Typ) 700 V Blocking Capability SOA and Switching Applications Information. CASE 221A06 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO220AB IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIII

1.2. mje13005.pdf Size:60K _st

MJE13005
MJE13005
MJE13005 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13005 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package particularly intended for switch-mode applications. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V 700 V CEV Collector-Emitter Voltage VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0) 9V IC Collector Current 4A I 8A CM Collector Peak Current I 2A B Base Current IBM 4A Base Peak Current Ptot Total Power Dissipation at Tcase ? 25 oC 75 W o Tstg Storage Temperature -65 to +150 C o Tj Max. Operating Junction Temperature 150 C 1/4 October 1995 MJE13005 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 1.67 C/W ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit 1 mA V = 700V CE ICEV Collector Cut-off Curre

1.3. mje13004_mje13005.pdf Size:72K _central

MJE13005
MJE13005
DATA SHEET MJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) SYMBOL MJE13004 MJE13005 UNITS Collector-Emitter Voltage VCEO 300 400 V Collector-Emitter Voltage VCEV 600 700 V Emitter-Base Voltage VEBO 9.0 V Collector Current IC 4.0 A Peak Collector Current ICM 8.0 A Base Current IB 2.0 A Peak Base Current IBM 4.0 A Power Dissipation (TA=25C) PD 2.0 W Power Dissipation PD 75 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 C Thermal Resistance ?JA 62.5 C/W Thermal Resistance ?JC 1.67 C/W ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICEV VCE=600V, VBE(OFF)=1.5V (MJE13004) 1.0 mA ICEV VCE=600V, VBE(OFF)=1.5V, TC=100C (MJE13004) 5.0 mA ICEV VCE=700V, VBE(OFF)=1.

1.4. mje13005.pdf Size:114K _central

MJE13005
MJE13005
DATA SHEET MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) SYMBOL UNITS Collector-Emitter Voltage VCEO 400 V Collector-Emitter Voltage VCEV 700 V Emitter-Base Voltage VEBO 9.0 V Collector Current IC 4.0 A Peak Collector Current ICM 8.0 A Base Current IB 2.0 A Peak Base Current IBM 4.0 A Emitter Current IE 6.0 A Peak Emitter Current IEM 12 A Power Dissipation (TA=25C) PD 2.0 W Power Dissipation PD 75 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 C Thermal Resistance ?JA 62.5 C/W Thermal Resistance ?JC 1.67 C/W ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEV VCE=700V, VBE(OFF)=1.5V 1.0 mA ICEV VCE=700V, VBE(OFF)=1.5V, TC=100C 5.0 mA IEBO VEB=9.0V 1.0 mA BVCEO IC=10mA 400 V VC

1.5. mje13005g.pdf Size:150K _onsemi

MJE13005
MJE13005
MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http://onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, 4 AMPERE Solenoid/Relay drivers and Deflection circuits. NPN SILICON Features POWER TRANSISTOR VCEO(sus) 400 V 400 VOLTS - 75 WATTS Reverse Bias SOA with Inductive Loads @ TC = 100_C Inductive Switching Matrix 2 to 4 A, 25 and 100_C tc @ 3A, 100_C is 180 ns (Typ) 700 V Blocking Capability SOA and Switching Applications Information TO-220AB These Devices are Pb-Free and are RoHS Compliant* CASE 221A-09 STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector-Emitter Voltage VCEO(sus) 400 Vdc 3 Collector-Emitter Voltage VCEV 700 Vdc Emitter-Base Voltage VEBO 9 Vdc MARKING DIAGRAM Collector Current - Continuous IC 4 Ad

1.6. mje13005d-k.pdf Size:115K _utc

MJE13005
MJE13005
UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in energy-saving light, electronic ballast, high frequency switching power supply, high frequency power transform or common power amplifier, etc. ? FEATURES * High Breakdown Voltage * High Current Capability * High Switching Speed * High Reliability * RoHS-Compliant Product ? INTERNAL SCHEMATIC DIAGRAM ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13005DL-K-x-TM3-T MJE13005DG-K-x-TM3-T TO-251 B C E Tube MJE13005DL-K-x-TM3-T (1) T: Tube (1)Packing Type (2) TM3: TO-251 (2)Package Type (3) x: refer to Classification

1.7. mje13005-k.pdf Size:393K _utc

MJE13005
MJE13005
UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS ? DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. ? FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С tC @ 3A, 100°С is 180 ns (Typ) * 700V blocking capability * SOA and switching applications information ? APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuits ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13005L-K-x-TA3-T MJE13005G-K-x-TA3-T TO-220 B C E Tube MJE13005L-K-x-TM3-T MJE13005G-K-x-TM3-T TO-251 B C E Tube MJE13005L-K-x-TN3-R MJE13005G-K-x-TN3-R TO-252 B C E Tape Reel MJE13005L-K-x-TA3-T (

1.8. mje13005d.pdf Size:118K _utc

MJE13005
MJE13005
UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER 1 1 TRANSISTOR TO-220 TO-220F ? DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN 1 power transistor. It is characterized by high breakdown voltage, 1 high current capability, high switching speed and high reliability. TO-251 TO-126 The UTC MJE13005D is intended to be used in energy-saving light, electronic ballast, high frequency switching power supply, high frequency power transform or common power amplifier, etc. ? FEATURES 1 * High Breakdown Voltage TO-126S * High Current Capability * High Switching Speed * High Reliability * RoHS-Compliant Product ? INTERNAL SCHEMATIC DIAGRAM ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13005DL-x-TA3-T MJE13005DG-x-TA3-T TO-220 B C E Tube MJE13005DL-x-TF3-T MJE13005DG-x-TF3-T TO-220F B C E Tube MJE13005DL-x-

1.9. mje13005.pdf Size:412K _utc

MJE13005
MJE13005
UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS ? DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. ? FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С tC @ 3A, 100°С is 180 ns (Typ) * 700V blocking capability * SOA and switching applications information ? APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuits ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13005L-x-TA3-T MJE13005G-x-TA3-T TO-220 B C E Tube MJE13005L-x-TF3-T MJE13005G-x-TF3-T TO-220F B C E Tube MJE13005L-x-TM3-T MJE13005G-x-TM3-T TO-251 B C E Tube MJE13005L-x-TN3-R MJE13005G-x-TN3-R TO-2

1.10. mje13005f.pdf Size:442K _kec

MJE13005
MJE13005
SEMICONDUCTOR MJE13005F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES ·Excellent Switching Times : ton=0.8? S(Max.), at IC=2A S(Max.), tf=0.9? ·High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC DC 4 Collector Current A ICP Pulse 8 IB Base Current 2 A Collector Power Dissipation PC 30 W (Tc=25?) Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 1 mA hFE(1) (Note) VCE=5V, IC=1A 18 - 35 DC Current Gain hFE(2) VCE=5V, IC=2A 10 - - IC=1A, IB=0.2A - - 0.5 Collector-Emitter VCE(sat) IC

1.11. mje13005d.pdf Size:51K _kec

MJE13005
MJE13005
SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A Built-in Free wheeling Diode makes efficient anti saturation operation. O C Suitable for half bridge light ballast Applications. F DIM MILLIMETERS Low base drive requirement. E _ G A 9.9 + 0.2 MAXIMUM RATING (Ta=25 ) B 15.95 MAX B C 1.3+0.1/-0.05 Q _ CHARACTERISTIC SYMBOL RATING UNIT D 0.8 0.1 + I _ E 3.6 + 0.2 VCBO _ Collector-Base Voltage 800 V F + 2.8 0.1 K P 3.7 G VCEO Collector-Emitter Voltage 400 V M H 0.5+0.1/-0.05 L 1.5 I VEBO J Emitter-Base Voltage 10 V _ + J 13.08 0.3 D K 1.46 IC DC 5 _ H L 1.4 0.1 + N N Collector Current A _ + M 1.27 0.1 1 2 3 ICP Pulse 10 _ + N 2.54 0.2 _ + O 4.5 0.2 IB Base Current 2 A _ + P 2.4 0.2 1. BASE _ 9.2 + 0.2 Q 2. COLLECTOR 1 2 3 PC 75 W Collector Power Dissipation (Tc=25 ) 3. EMITTER Tj Junction Temperature 150 Tstg -55 150 Storage Temperature R

1.12. mje13005.pdf Size:436K _kec

MJE13005
MJE13005
SEMICONDUCTOR MJE13005 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES Excellent Switching Times : ton=0.8 S(Max.), tf=0.9 S(Max.), at IC=2A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC DC 4 Collector Current A ICP Pulse 8 IB Base Current 2 A Collector Power Dissipation PC 75 W (Tc=25 ) Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 1 mA hFE(1) (Note) VCE=5V, IC=1A 18 - 35 DC Current Gain hFE(2) VCE=5V, IC=2A 10 - - IC=1A, IB=0.2A - - 0.5 VCE(sat) IC=2A, IB=0.5A Collector-Emitter S

1.13. mje13005df.pdf Size:375K _kec

MJE13005
MJE13005
SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A C ·Built-in Free wheeling Diode makes efficient anti saturation operation. DIM MILLIMETERS S ·Suitable for half bridge light ballast Applications. _ A 10.0 + 0.3 _ + B 15.0 0.3 E ·Low base drive requirement. C _ 2.70 0.3 + D 0.76+0.09/-0.05 MAXIMUM RATING (Ta=25?) _ E ?3.2 0.2 + _ F 3.0 0.3 + CHARACTERISTIC SYMBOL RATING UNIT _ 12.0 0.3 G + H 0.5+0.1/-0.05 VCBO Collector-Base Voltage 800 V _ + J 13.6 0.5 L L R K _ 3.7 0.2 + VCEO Collector-Emitter Voltage 400 V L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 VEBO M Emitter-Base Voltage 10 V D D _ N 2.54 0.1 + _ IC + DC 5 P 6.8 0.1 _ + Collector Current A Q 4.5 0.2 ICP _ Pulse 10 R 2.6 0.2 + N N H S 0.5 Typ IB Base Current 2 A PC 30 W Collector Power Dissipation (Tc=25?) 1. BASE 2. COLLECTOR Tj Junction Temperature 150 ? 1 2 3 3. EMITTER Tstg -55?150 ?

1.14. mje13005.pdf Size:154K _inchange_semiconductor

MJE13005
MJE13005
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE13005 Ў¤ Absolute maximum ratings (Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg IN Collector-base voltage Collector-emitter voltage PARAMETER Emitter-base voltage Collector current Collector current-Peak ANG CH E SEM Open base Open emitter Open collector OND IC CONDITIONS TOR UC VALUE 700 400 9 4 8 2 4 6 12 UNIT V V V A A A A A A W Base current Base current-PeaK Emitter current Emitter current-Peak Ta=25Ўж Total power dissipation TC=25Ўж Junction temperature Storage temperature 2 75 150 -65~

1.15. hmje13005.pdf Size:52K _hsmc

MJE13005
MJE13005
Spec. No. : HE6741 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13005 NPN EPITAXIAL PLANAR TRANSISTOR Description • Switch Regulators TO-220 • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (T =25°C) A • Maximum Temperatures Storage Temperature.............................................................................................................................................. -50 ~ +150 °C Junction Temperature........................................................................................................................................ 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (T =25°C)....................................................................................................................................... 75 W C • Maximum Voltages and Currents (T =25°

1.16. mje13005d.pdf Size:232K _sisemi

MJE13005
MJE13005
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13005D NPN D / D SERIES TRANSISTORS MJE13005D NPN D 系列晶体管/ D SERIES TRANSISTORS MJE13005D NPN D / D SERIES TRANSISTORS MJE13005D RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS ●FEATURES FEATURES FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 开关电源 APPLICATION APPLICATION ●APPLICATION ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION: ■SWITCH MODE POWER SUPPLY Tc=25°C Tc=25°C ●最大额定值(Tc=25°C Tc=25°C) Absolute Maximum Ra

1.17. mje13005.pdf Size:232K _sisemi

MJE13005
MJE13005
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13005 NPN MJE /MJE SERIES TRANSISTORS MJE13005 NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13005 NPN MJE /MJE SERIES TRANSISTORS MJE13005 RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS ●FEATURES FEATURES FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 开关电源 ●APPLICATION ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION APPLICATION APPLICATION: ■SWITCH MODE POWER SUPPLY Tc=25°C Tc=25°C) ●最大额定值(Tc=25°C Tc=25°C Absolute Ma

1.18. mje13005_1.pdf Size:239K _sisemi

MJE13005
MJE13005
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13005 NPN MJE /MJE SERIES TRANSISTORS MJE13005 NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13005 NPN MJE /MJE SERIES TRANSISTORS MJE13005 RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS FEATURES FEATURES ●FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 开关电源 APPLICATION ●APPLICATION ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION APPLICATION: ■SWITCH MODE POWER SUPPLY Tc=25°C Tc=25°C) ●最大额定值(Tc=25°C Tc=25°C Absolute Ma

See also transistors datasheet: MJE1102 , MJE1103 , MJE12007 , MJE1290 , MJE1291 , MJE13002 , MJE13003 , MJE13004 , 2SC2625 , MJE13006 , MJE13007 , MJE13007A , MJE13008 , MJE13009 , MJE13070 , MJE13071 , MJE1320 .

Keywords

 MJE13005 Datasheet  MJE13005 Datenblatt  MJE13005 RoHS  MJE13005 Distributor
 MJE13005 Application Notes  MJE13005 Component  MJE13005 Circuit  MJE13005 Schematic
 MJE13005 Equivalent  MJE13005 Cross Reference  MJE13005 Data Sheet  MJE13005 Fiche Technique

 

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