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MJE13005 Transistor (IC) Datasheet. Cross Reference Search. MJE13005 Equivalent

Type Designator: MJE13005

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 75

Maximum collector-base voltage |Ucb|, V: 700

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 9

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), 掳C: 150

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF: 65

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of MJE13005 transistor: TO220

MJE13005 Transistor Equivalent Substitute - Cross-Reference Search

 

MJE13005 PDF:

1.1. mje13005.pdf Size:311K _motorola

MJE13005
MJE13005

Order this document MOTOROLA by MJE13005/D SEMICONDUCTOR TECHNICAL DATA * MJE13005 *Motorola Preferred Device Designer's? Data Sheet 4 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS These devices are designed for high杤oltage, high杝peed power switching 75 WATTS inductive circuits where fall time is critical. They are particularly suite

1.2. mje13005.pdf Size:60K _st

MJE13005
MJE13005

MJE13005 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13005 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package particularly intended for switch-mode applications. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V 700 V CEV Collector-Emitter Voltage VCEO Collector-Emi

1.3. mje13004_mje13005.pdf Size:72K _central

MJE13005
MJE13005

DATA SHEET MJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25癈 unless otherwise noted) SYMBOL MJE13004 MJE13005 UNITS Collector-Emitter Voltage VCEO 300 400 V Collector-Emitter Voltage VCEV

1.4. mje13005.pdf Size:114K _central

MJE13005
MJE13005

DATA SHEET MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25癈 unless otherwise noted) SYMBOL UNITS Collector-Emitter Voltage VCEO 400 V Collector-Emitter Voltage VCEV 700 V Emitter-Base Voltage VEBO 9.0 V Collec

1.5. mje13005g.pdf Size:150K _onsemi

MJE13005
MJE13005

MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http://onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator抯, Inverters, Motor Controls, 4 AMPERE Solenoid/Relay drivers and Deflection circuits. NPN SIL

1.6. mje13005d-k.pdf Size:115K _utc

MJE13005
MJE13005

UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in energ

1.7. mje13005-k.pdf Size:393K _utc

MJE13005
MJE13005

UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS ? DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. ? FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100掳小 * Indu

1.8. mje13005d.pdf Size:118K _utc

MJE13005
MJE13005

UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER 1 1 TRANSISTOR TO-220 TO-220F ? DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN 1 power transistor. It is characterized by high breakdown voltage, 1 high current capability, high switching speed and high reliability. TO-251 TO-126 The UTC MJE1

1.9. mje13005.pdf Size:412K _utc

MJE13005
MJE13005

UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS ? DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. ? FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100掳小 * Induct

1.10. mje13005f.pdf Size:442K _kec

MJE13005
MJE13005

SEMICONDUCTOR MJE13005F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES 路Excellent Switching Times : ton=0.8? S(Max.), at IC=2A S(Max.), tf=0.9? 路High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL R

1.11. mje13005d.pdf Size:51K _kec

MJE13005
MJE13005

SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A Built-in Free wheeling Diode makes efficient anti saturation operation. O C Suitable for half bridge light ballast Applications. F DIM MILLIMETERS Low base drive requirement. E _ G A 9.9 + 0.2 MAXIMUM RATING (Ta=25 ) B 15.95 MAX B C 1.3+0.1/-0.05 Q _ CHARACT

1.12. mje13005.pdf Size:436K _kec

MJE13005
MJE13005

SEMICONDUCTOR MJE13005 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES Excellent Switching Times : ton=0.8 S(Max.), tf=0.9 S(Max.), at IC=2A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UN

1.13. mje13005df.pdf Size:375K _kec

MJE13005
MJE13005

SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A C 路Built-in Free wheeling Diode makes efficient anti saturation operation. DIM MILLIMETERS S 路Suitable for half bridge light ballast Applications. _ A 10.0 + 0.3 _ + B 15.0 0.3 E 路Low base drive requirement. C _ 2.70 0.3 + D 0.76+0.09/-0.05 MAXIMUM RATI

1.14. mje13005.pdf Size:154K _inchange_semiconductor

MJE13005
MJE13005

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION 袔陇 With TO-220C package 袔陇 High voltage ,high speed APPLICATIONS 袔陇 Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitte

1.15. hmje13005.pdf Size:52K _hsmc

MJE13005
MJE13005

Spec. No. : HE6741 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13005 NPN EPITAXIAL PLANAR TRANSISTOR Description 鈥 Switch Regulators TO-220 鈥 PWM Inverters and Motor Controls 鈥 Solenoid and Relay Drivers 鈥 Deflection Circuits Absolute Maximum Ratings (T =25掳C) A 鈥 Maximum Temperatures Storage

1.16. mje13005d.pdf Size:232K _sisemi

MJE13005
MJE13005

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13005D NPN D / D SERIES TRANSISTORS MJE13005D NPN D 绯诲垪鏅朵綋绠

1.17. mje13005.pdf Size:232K _sisemi

MJE13005
MJE13005

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13005 NPN MJE /MJE SERIES TRANSISTORS MJE13005 NPN MJE 绯诲垪鏅

1.18. mje13005_1.pdf Size:239K _sisemi

MJE13005
MJE13005

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13005 NPN MJE /MJE SERIES TRANSISTORS MJE13005 NPN MJE 绯诲垪鏅

1.19. mje13005t.pdf Size:299K _first_silicon

MJE13005
MJE13005

锘縎EMICONDUCTOR MJE13005T TECHNICAL DATA MJE13005T TRANSISTOR (NPN) unit High frequency electronic lighting switching power supply applications. Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P (Ta=25鈩) 1.25 W C P (Tc=25鈩) 50 W C T 150 鈩 j T -55锝150 鈩 stg Electrical characteristics(Ta=25鈩) Rating Symbol Test condition Unit

1.20. mje13005f.pdf Size:251K _first_silicon

MJE13005
MJE13005

锘縎EMICONDUCTOR MJE13005F TECHNICAL DATA C MJE13005F TRANSISTOR (NPN) A SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. E DIM MILLIMETERS _ A 10 16 0 20 + HIGH SPEED DC-DC CONVERTER APPLICATION. _ B 15 00 0 20 + _ C 3 00 0 20 + FLUORESCENT LIGHT BALLASTOR APPLICATION. D 0 625卤0 125 E 3 50 typ F 2 7 typ _ G 16 80 0 4 + FEATURES L M _ H 0 45 0 1

See also transistors datasheet: MJE1102 , MJE1103 , MJE12007 , MJE1290 , MJE1291 , MJE13002 , MJE13003 , MJE13004 , 2SC2625 , MJE13006 , MJE13007 , MJE13007A , MJE13008 , MJE13009 , MJE13070 , MJE13071 , MJE1320 .

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