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MJE13005 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJE13005

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 75

Maximum collector-base voltage |Ucb|, V: 700

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 9

Maximum collector current |Ic max|, A: 4

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF: 65

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of MJE13005 transistor: TO220

MJE13005 Equivalent Transistors - Cross-Reference Search

MJE13005 PDF document for downloads:

1.1. mje13005.pdf Size:311K _motorola

Order this document MOTOROLA by MJE13005/D SEMICONDUCTOR TECHNICAL DATA * MJE13005 *Motorola Preferred Device Designer's? Data Sheet 4 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS These devices are designed for high–voltage, high–speed power switching 75 WATTS inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: • VCEO(sus) 400 V • Reverse Bias SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 2 to 4 Amp, 25 and 100_C . . . tc @ 3A, 100_C is 180 ns (Typ) • 700 V Blocking Capability • SOA and Switching Applications Information. CASE 221A–06 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO–220AB IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIII

1.2. mje13005.pdf Size:60K _st

MJE13005 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13005 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package particularly intended for switch-mode applications. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V 700 V CEV Collector-Emitter Voltage VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0) 9V IC Collector Current 4A I 8A CM Collector Peak Current I 2A B Base Current IBM 4A Base Peak Current Ptot Total Power Dissipation at Tcase ? 25 oC 75 W o Tstg Storage Temperature -65 to +150 C o Tj Max. Operating Junction Temperature 150 C 1/4 October 1995 MJE13005 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 1.67 C/W ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit 1 mA V = 700V CE ICEV Collector Cut-off Curre

1.3. mje13004_mje13005.pdf Size:72K _central

DATA SHEET MJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25°C unless otherwise noted) SYMBOL MJE13004 MJE13005 UNITS Collector-Emitter Voltage VCEO 300 400 V Collector-Emitter Voltage VCEV 600 700 V Emitter-Base Voltage VEBO 9.0 V Collector Current IC 4.0 A Peak Collector Current ICM 8.0 A Base Current IB 2.0 A Peak Base Current IBM 4.0 A Power Dissipation (TA=25°C) PD 2.0 W Power Dissipation PD 75 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance ?JA 62.5 °C/W Thermal Resistance ?JC 1.67 °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICEV VCE=600V, VBE(OFF)=1.5V (MJE13004) 1.0 mA ICEV VCE=600V, VBE(OFF)=1.5V, TC=100°C (MJE13004) 5.0 mA ICEV VCE=700V, VBE(OFF)=1.

1.4. mje13005.pdf Size:114K _central

DATA SHEET MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25°C unless otherwise noted) SYMBOL UNITS Collector-Emitter Voltage VCEO 400 V Collector-Emitter Voltage VCEV 700 V Emitter-Base Voltage VEBO 9.0 V Collector Current IC 4.0 A Peak Collector Current ICM 8.0 A Base Current IB 2.0 A Peak Base Current IBM 4.0 A Emitter Current IE 6.0 A Peak Emitter Current IEM 12 A Power Dissipation (TA=25°C) PD 2.0 W Power Dissipation PD 75 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance ?JA 62.5 °C/W Thermal Resistance ?JC 1.67 °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEV VCE=700V, VBE(OFF)=1.5V 1.0 mA ICEV VCE=700V, VBE(OFF)=1.5V, TC=100°C 5.0 mA IEBO VEB=9.0V 1.0 mA BVCEO IC=10mA 400 V VC

1.5. mje13005g.pdf Size:150K _onsemi

MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http://onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, 4 AMPERE Solenoid/Relay drivers and Deflection circuits. NPN SILICON Features POWER TRANSISTOR • VCEO(sus) 400 V 400 VOLTS - 75 WATTS • Reverse Bias SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 2 to 4 A, 25 and 100_C tc @ 3A, 100_C is 180 ns (Typ) • 700 V Blocking Capability • SOA and Switching Applications Information TO-220AB • These Devices are Pb-Free and are RoHS Compliant* CASE 221A-09 STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector-Emitter Voltage VCEO(sus) 400 Vdc 3 Collector-Emitter Voltage VCEV 700 Vdc Emitter-Base Voltage VEBO 9 Vdc MARKING DIAGRAM Collector Current - Continuous IC 4 Ad

1.6. mje13005d.pdf Size:51K _kec

SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A Built-in Free wheeling Diode makes efficient anti saturation operation. O C Suitable for half bridge light ballast Applications. F DIM MILLIMETERS Low base drive requirement. E _ G A 9.9 + 0.2 MAXIMUM RATING (Ta=25 ) B 15.95 MAX B C 1.3+0.1/-0.05 Q _ CHARACTERISTIC SYMBOL RATING UNIT D 0.8 0.1 + I _ E 3.6 + 0.2 VCBO _ Collector-Base Voltage 800 V F + 2.8 0.1 K P 3.7 G VCEO Collector-Emitter Voltage 400 V M H 0.5+0.1/-0.05 L 1.5 I VEBO J Emitter-Base Voltage 10 V _ + J 13.08 0.3 D K 1.46 IC DC 5 _ H L 1.4 0.1 + N N Collector Current A _ + M 1.27 0.1 1 2 3 ICP Pulse 10 _ + N 2.54 0.2 _ + O 4.5 0.2 IB Base Current 2 A _ + P 2.4 0.2 1. BASE _ 9.2 + 0.2 Q 2. COLLECTOR 1 2 3 PC 75 W Collector Power Dissipation (Tc=25 ) 3. EMITTER Tj Junction Temperature 150 Tstg -55 150 Storage Temperature R

1.7. mje13005f.pdf Size:442K _kec

SEMICONDUCTOR MJE13005F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES ·Excellent Switching Times : ton=0.8? S(Max.), at IC=2A S(Max.), tf=0.9? ·High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC DC 4 Collector Current A ICP Pulse 8 IB Base Current 2 A Collector Power Dissipation PC 30 W (Tc=25?) Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 1 mA hFE(1) (Note) VCE=5V, IC=1A 18 - 35 DC Current Gain hFE(2) VCE=5V, IC=2A 10 - - IC=1A, IB=0.2A - - 0.5 Collector-Emitter VCE(sat) IC

1.8. mje13005df.pdf Size:375K _kec

SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A C ·Built-in Free wheeling Diode makes efficient anti saturation operation. DIM MILLIMETERS S ·Suitable for half bridge light ballast Applications. _ A 10.0 + 0.3 _ + B 15.0 0.3 E ·Low base drive requirement. C _ 2.70 0.3 + D 0.76+0.09/-0.05 MAXIMUM RATING (Ta=25?) _ E ?3.2 0.2 + _ F 3.0 0.3 + CHARACTERISTIC SYMBOL RATING UNIT _ 12.0 0.3 G + H 0.5+0.1/-0.05 VCBO Collector-Base Voltage 800 V _ + J 13.6 0.5 L L R K _ 3.7 0.2 + VCEO Collector-Emitter Voltage 400 V L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 VEBO M Emitter-Base Voltage 10 V D D _ N 2.54 0.1 + _ IC + DC 5 P 6.8 0.1 _ + Collector Current A Q 4.5 0.2 ICP _ Pulse 10 R 2.6 0.2 + N N H S 0.5 Typ IB Base Current 2 A PC 30 W Collector Power Dissipation (Tc=25?) 1. BASE 2. COLLECTOR Tj Junction Temperature 150 ? 1 2 3 3. EMITTER Tstg -55?150 ?

1.9. mje13005.pdf Size:436K _kec

SEMICONDUCTOR MJE13005 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES Excellent Switching Times : ton=0.8 S(Max.), tf=0.9 S(Max.), at IC=2A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC DC 4 Collector Current A ICP Pulse 8 IB Base Current 2 A Collector Power Dissipation PC 75 W (Tc=25 ) Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 1 mA hFE(1) (Note) VCE=5V, IC=1A 18 - 35 DC Current Gain hFE(2) VCE=5V, IC=2A 10 - - IC=1A, IB=0.2A - - 0.5 VCE(sat) IC=2A, IB=0.5A Collector-Emitter S

1.10. mje13005.pdf Size:154K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE13005 Ў¤ Absolute maximum ratings (Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg IN Collector-base voltage Collector-emitter voltage PARAMETER Emitter-base voltage Collector current Collector current-Peak ANG CH E SEM Open base Open emitter Open collector OND IC CONDITIONS TOR UC VALUE 700 400 9 4 8 2 4 6 12 UNIT V V V A A A A A A W Base current Base current-PeaK Emitter current Emitter current-Peak Ta=25Ўж Total power dissipation TC=25Ўж Junction temperature Storage temperature 2 75 150 -65~

1.11. hmje13005.pdf Size:52K _hsmc

Spec. No. : HE6741 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13005 NPN EPITAXIAL PLANAR TRANSISTOR Description • Switch Regulators TO-220 • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (T =25°C) A • Maximum Temperatures Storage Temperature.............................................................................................................................................. -50 ~ +150 °C Junction Temperature........................................................................................................................................ 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (T =25°C)....................................................................................................................................... 75 W C • Maximum Voltages and Currents (T =25°

See also transistors datasheet: MJE1102 , MJE1103 , MJE12007 , MJE1290 , MJE1291 , MJE13002 , MJE13003 , MJE13004 , OC44 , MJE13006 , MJE13007 , MJE13007A , MJE13008 , MJE13009 , MJE13070 , MJE13071 , MJE1320 .

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