All Transistors. MJE13008 Datasheet

 

MJE13008 Transistor. Datasheet pdf. Equivalent

Type Designator: MJE13008

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 掳C

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 160 pF

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO220

MJE13008 Transistor Equivalent Substitute - Cross-Reference Search

MJE13008 Datasheet PDF:

3.1. mje13009.pdf Size:451K _motorola

MJE13008
MJE13008

Order this document MOTOROLA by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009* *Motorola Preferred Device Designer's? Data Sheet 12 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS The MJE13009 is designed for high杤oltage, high杝peed power switching inductive 100 WATTS circuits where fall time is critical. They are particularly suited

3.2. mje13002.pdf Size:304K _motorola

MJE13008
MJE13008

Order this document MOTOROLA by MJE13002/D SEMICONDUCTOR TECHNICAL DATA * MJE13002 MJE13003* Designer's? Data Sheet *Motorola Preferred Device SWITCHMODE Series 1.5 AMPERE NPN SILICON NPN Silicon Power Transistors POWER TRANSISTORS 300 AND 400 VOLTS These devices are designed for high杤oltage, high杝peed power switching 40 WATTS inductive circuits where fall time is critical. They

3.3. mje13007.pdf Size:337K _motorola

MJE13008
MJE13008

Order this document MOTOROLA by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE? NPN Bipolar Power Transistor POWER TRANSISTOR For Switching Power Supply Applications 8.0 AMPERES 400 VOLTS The MJE/MJF13007 is designed for high杤oltage, high杝peed power switching 80/40 WATTS inductive circuits where fall time is critical. It is particularly

3.4. mje13005.pdf Size:311K _motorola

MJE13008
MJE13008

Order this document MOTOROLA by MJE13005/D SEMICONDUCTOR TECHNICAL DATA * MJE13005 *Motorola Preferred Device Designer's? Data Sheet 4 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS These devices are designed for high杤oltage, high杝peed power switching 75 WATTS inductive circuits where fall time is critical. They are particularly suite

3.5. mje13009.pdf Size:78K _st

MJE13008
MJE13008

MJE13009 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-Emitt

3.6. mje13007.pdf Size:29K _st

MJE13008
MJE13008

MJE13007 ? SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL DESCRIPTION 3 2 The MJE13007 is a silicon multiepitaxial mesa 1 NPN power transistor mounted in Jedec TO-220 plastic package. TO-220 It is are inteded for use in motor control, switching regulators etc. INTERNAL

3.7. mje13005.pdf Size:60K _st

MJE13008
MJE13008

MJE13005 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13005 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package particularly intended for switch-mode applications. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V 700 V CEV Collector-Emitter Voltage VCEO Collector-Emi

3.8. mje13007a.pdf Size:63K _st

MJE13008
MJE13008

MJE13007A SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL DESCRIPTION 3 The MJE13007A is silicon multiepitaxial mesa 2 1 NPN power transistor mounted in Jedec TO-220 plastic package. TO-220 They are inteded for use in motor control, switching regulators etc. INTERNAL

3.9. mje13004_mje13005.pdf Size:72K _central

MJE13008
MJE13008

DATA SHEET MJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25癈 unless otherwise noted) SYMBOL MJE13004 MJE13005 UNITS Collector-Emitter Voltage VCEO 300 400 V Collector-Emitter Voltage VCEV

3.10. mje13005.pdf Size:114K _central

MJE13008
MJE13008

DATA SHEET MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25癈 unless otherwise noted) SYMBOL UNITS Collector-Emitter Voltage VCEO 400 V Collector-Emitter Voltage VCEV 700 V Emitter-Base Voltage VEBO 9.0 V Collec

3.11. mje13009-d.pdf Size:189K _onsemi

MJE13008
MJE13008

MJE13009G SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009G is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http://onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, 12 AMPERE Solenoid/Relay drivers and Deflection circuits. NPN SILI

3.12. mje13005g.pdf Size:150K _onsemi

MJE13008
MJE13008

MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http://onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator抯, Inverters, Motor Controls, 4 AMPERE Solenoid/Relay drivers and Deflection circuits. NPN SIL

3.13. mje13003.pdf Size:107K _onsemi

MJE13008
MJE13008

MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http://onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Feature

3.14. mje13007-d.pdf Size:194K _onsemi

MJE13008
MJE13008

MJE13007G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007G is designed for high-voltage, high-speed power http://onsemi.com switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay POWER TRANSISTOR driver

3.15. mje13003-e.pdf Size:274K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003-E designed for use in high鈥搗olatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator鈥檚,inverters, DC-DC converter, Motor control

3.16. mje13009d.pdf Size:183K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13009D is intended to be used in a energy-saving lights

3.17. mje13005d-k.pdf Size:115K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in energ

3.18. mje13007d.pdf Size:368K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 700V

3.19. mje13009.pdf Size:448K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Re

3.20. mje13001.pdf Size:180K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13001L-x-AB3-A -R MJE13001G-x-AB3-A-R SOT-89 E C B Tape Reel MJE13001L-x-AB3-F -R MJE13001G-x-AB3-F-R

3.21. mje13002.pdf Size:278K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002 designed for use in high鈥搗olatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator鈥檚,inverters, DC-DC converter, Motor control, S

3.22. mje13009-k.pdf Size:440K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoi

3.23. mje13007-m.pdf Size:351K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13007-M NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007-M is designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V *

3.24. mje13003d-p.pdf Size:126K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. ? FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low

3.25. mje13007.pdf Size:380K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS ? DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. ? FEATURES * VCEO(SUS) 400V * 700V Blo

3.26. mje13005-k.pdf Size:393K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS ? DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. ? FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100掳小 * Indu

3.27. mje13001-p.pdf Size:191K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13001-PL-x-T92-B MJE13001-PG-x-T92-B TO-92 B C E Tape Box MJE13001-PL-x-T92-K MJE13001-PG-x-T92-K TO

3.28. mje13003d.pdf Size:204K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. ? FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High

3.29. mje13005d.pdf Size:118K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER 1 1 TRANSISTOR TO-220 TO-220F ? DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN 1 power transistor. It is characterized by high breakdown voltage, 1 high current capability, high switching speed and high reliability. TO-251 TO-126 The UTC MJE1

3.30. mje13003.pdf Size:399K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR ? DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. ? FEATURES * Reverse biased SOA with inductive load @ TC=100掳C * Inductive s

3.31. mje13003-p.pdf Size:358K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR ? DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. ? FEATURES * Reverse biased SOA with inductive load @ Tc=100掳C * Induct

3.32. mje13005.pdf Size:412K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS ? DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. ? FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100掳小 * Induct

3.33. mje13009-p.pdf Size:424K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoi

3.34. mje13002-e.pdf Size:276K _utc

MJE13008
MJE13008

UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002-E designed for use in high鈥搗olatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator鈥檚,inverters, DC-DC converter, Motor contro

3.35. mje13002_13003.pdf Size:248K _cdil

MJE13008
MJE13008

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and Deflection Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MJE13002 MJE13003 UNIT VCEO(sus) Collector Emitter Voltage 300 40

3.36. mje13006_07.pdf Size:330K _cdil

MJE13008
MJE13008

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTORS MJE13006 MJE13007 TO-220 Plastic Package Switchmode Series NPN Silicon Power Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MJE13006 MJE13007 UNIT Collector Emitter Sustaining Voltage VCEO (sus) 300 400 V Collector Emitter Voltage VCEV 600 700 V VEBO Emitte

3.37. mje13004_05.pdf Size:273K _cdil

MJE13008
MJE13008

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTORS MJE13004 MJE13005 TO-220 Plastic Package Switchmode Series NPN Silicon Power Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MJE13004 MJE13005 UNIT Collector Emitter Sustaining Voltage VCEO (sus) 300 400 V Collector Emitter Voltage VCEV 600 700 V VEBO Emitte

3.38. mje13009.pdf Size:272K _kec

MJE13008
MJE13008

SEMICONDUCTOR MJE13009 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VC

3.39. mje13009f.pdf Size:280K _kec

MJE13008
MJE13008

SEMICONDUCTOR MJE13009F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V V

3.40. mje13007f.pdf Size:351K _kec

MJE13008
MJE13008

SEMICONDUCTOR MJE13007F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES 路Excellent Switching Times : ton=1.6? S(Max.), at IC=5A S(Max.), tf=0.7? 路High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 7

3.41. mje13007.pdf Size:339K _kec

MJE13008
MJE13008

SEMICONDUCTOR MJE13007 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES 路Excellent Switching Times : ton=1.6? S(Max.), at IC=5A S(Max.), tf=0.7? 路High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 70

3.42. mje13005f.pdf Size:442K _kec

MJE13008
MJE13008

SEMICONDUCTOR MJE13005F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES 路Excellent Switching Times : ton=0.8? S(Max.), at IC=2A S(Max.), tf=0.9? 路High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL R

3.43. mje13005d.pdf Size:51K _kec

MJE13008
MJE13008

SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A Built-in Free wheeling Diode makes efficient anti saturation operation. O C Suitable for half bridge light ballast Applications. F DIM MILLIMETERS Low base drive requirement. E _ G A 9.9 + 0.2 MAXIMUM RATING (Ta=25 ) B 15.95 MAX B C 1.3+0.1/-0.05 Q _ CHARACT

3.44. mje13003.pdf Size:53K _kec

MJE13008
MJE13008

SEMICONDUCTOR MJE13003 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A B HIGH VOLTAGE AND HIGH SPEED D C SWITCHING APPLICATION. E F FEATURES 路Excellent Switching Times G : ton=1.1? S(Max.), at IC=1A S(Max.), tf=0.7? H 路High Collector Voltage : VCBO=700V. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 _ + F 11.0 0.

3.45. mje13004d.pdf Size:366K _kec

MJE13008
MJE13008

SEMICONDUCTOR MJE13004D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A B D HIGH VOLTAGE AND HIGH SPEED C SWITCHING APPLICATION. E F FEATURES G 路Built-in Free Wheeling Diode H 路Suitable for Electrouic Ballast Application DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 MAXIMUM RATING (Ta=25?) _ + F 11.0 0.3 G 2.9 MAX

3.46. mje13005.pdf Size:436K _kec

MJE13008
MJE13008

SEMICONDUCTOR MJE13005 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES Excellent Switching Times : ton=0.8 S(Max.), tf=0.9 S(Max.), at IC=2A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UN

3.47. mje13003hv.pdf Size:41K _kec

MJE13008
MJE13008

SEMICONDUCTOR MJE13003HV TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A HIGH VOLTAGE AND HIGH SPEED B D C SWITCHING APPLICATION. E F FEATURES Excellent Switching Times G : ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1A H High Collector Voltage : VCBO=900V. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 _ + F 11.0 0.3 MAXI

3.48. mje13005df.pdf Size:375K _kec

MJE13008
MJE13008

SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A C 路Built-in Free wheeling Diode makes efficient anti saturation operation. DIM MILLIMETERS S 路Suitable for half bridge light ballast Applications. _ A 10.0 + 0.3 _ + B 15.0 0.3 E 路Low base drive requirement. C _ 2.70 0.3 + D 0.76+0.09/-0.05 MAXIMUM RATI

3.49. mje13009.pdf Size:157K _inchange_semiconductor

MJE13008
MJE13008

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION 袔陇 With TO-220C package 袔陇 High voltage ,high speed APPLICATIONS 袔陇 Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitte

3.50. mje13009f.pdf Size:143K _inchange_semiconductor

MJE13008
MJE13008

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE13009F DESCRIPTION 路Collector鈥揈mitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) 路Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A 路Switching Time : tf= 0.7?s(Max.)@ IC= 8.0A APPLICATIONS 路Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit

3.51. mje13002.pdf Size:120K _inchange_semiconductor

MJE13008
MJE13008

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION 袔陇 With TO-126 package 袔陇 High voltage ,high speed APPLICATIONS 袔陇 Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitte

3.52. mje13004.pdf Size:120K _inchange_semiconductor

MJE13008
MJE13008

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13004 DESCRIPTION 袔陇 With TO-220C package 袔陇 High voltage ,high speed APPLICATIONS 袔陇 Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounti

3.53. mje13003d.pdf Size:128K _inchange_semiconductor

MJE13008
MJE13008

INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION 路High Voltage Capability 路High Speed Switching 路Wide Area of Safe Operation APPLICATIONS 路Fluorescent lamp 路Electronic ballast 路Electronic transformer 路Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V

3.54. mje13003.pdf Size:169K _inchange_semiconductor

MJE13008
MJE13008

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION 袔陇 With TO-126 package 袔陇 High voltage ,high speed APPLICATIONS 袔陇 Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter

3.55. mje13005.pdf Size:154K _inchange_semiconductor

MJE13008
MJE13008

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION 袔陇 With TO-220C package 袔陇 High voltage ,high speed APPLICATIONS 袔陇 Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitte

3.56. mje13003b.pdf Size:178K _wietron

MJE13008
MJE13008

WEITRON MJE13003B High Voltage Fast-switching COLLECTOR 2. NPN Power Transistor P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE DESCRIPTION: 1. The device is manufactured using high voltage EMITTER TO-92 Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhanc

3.57. hmje13007.pdf Size:50K _hsmc

MJE13008
MJE13008

Spec. No. : HE200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description 鈥 High Voltage, High Speed Power Switch TO-220 鈥 Switch Regulators 鈥 PWM Inverters and Motor Controls 鈥 Solenoid and Relay Drivers 鈥 Deflection Circuits Absolute Maximum Ratings (T =2

3.58. hmje13005.pdf Size:52K _hsmc

MJE13008
MJE13008

Spec. No. : HE6741 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13005 NPN EPITAXIAL PLANAR TRANSISTOR Description 鈥 Switch Regulators TO-220 鈥 PWM Inverters and Motor Controls 鈥 Solenoid and Relay Drivers 鈥 Deflection Circuits Absolute Maximum Ratings (T =25掳C) A 鈥 Maximum Temperatures Storage

3.59. hmje13007a.pdf Size:50K _hsmc

MJE13008
MJE13008

Spec. No. : HE200501 HI-SINCERITY Issued Date : 2005.06.01 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13007A NPN EPITAXIAL PLANAR TRANSISTOR Description 鈥 High Voltage, High Speed Power Switch TO-220 鈥 Switch Regulators 鈥 PWM Inverters and Motor Controls 鈥 Solenoid and Relay Drivers 鈥 Deflection Circuits Absolute Maximum Ratings (T =

3.60. hmje13003d.pdf Size:51K _hsmc

MJE13008
MJE13008

Spec. No. : HD200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.09.04 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description 鈥 High Voltage, High Speed Power Switch TO-126ML 鈥 Switch Regulators 鈥 PWM Inverters and Motor Controls 鈥 Solenoid and Relay Drivers 鈥 Deflection Circuits Absolute Maximum Ratings (T

3.61. hmje13003.pdf Size:140K _hsmc

MJE13008
MJE13008

Spec. No. : HT200210 HI-SINCERITY Issued Date : 2001.01.01 Revised Date : 2010.03.16 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description 鈥 High Voltage, High Speed Power Switch 鈥 Switch Regulators 鈥 PWM Inverters and Motor Controls TO-126 鈥 Solenoid and Relay Drivers 鈥 Deflection Circuits Absolute Maximum Ratings (TA=2

3.62. hmje13001.pdf Size:46K _hsmc

MJE13008
MJE13008

Spec. No. : HA200213 HI-SINCERITY Issued Date : 2002.06.01 Revised Date : 2005.02.05 MICROELECTRONICS CORP. Page No. : 1/4 HMJE13001 NPN Triple Diffused Planar Type High Voltage Transistor Description The HMJE13001 is a medium power transistor designed for use in switching applications. TO-92 Features 鈥 High breakdown voltage 鈥 Low collector saturation voltage 鈥 Fast switching

3.63. hmje13009a.pdf Size:55K _hsmc

MJE13008
MJE13008

Spec. No. : HE200206 HI-SINCERITY Issued Date : 2002.02.01 Revised Date : 2006.07.04 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch-controls, Solenoid/Relay driver

3.64. hmje13003e.pdf Size:83K _hsmc

MJE13008
MJE13008

Spec. No. : HE200502 HI-SINCERITY Issued Date : 2005.10.01 Revised Date : 2009.10.14 MICROELECTRONICS CORP. Page No. : 1/4 HMJE13003E NPN Epitaxial Planar Transistor Description 鈥 High Voltage, High Speed Power Switch 鈥 Switch Regulators 鈥 PWM Inverters and Motor Controls TO-220 鈥 Solenoid and Relay Drivers 鈥 Deflection Circuits Absolute Maximum Ratings (TA=

3.65. mje13009a_1.pdf Size:207K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE 绯诲垪

3.66. mje13009.pdf Size:206K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009 NPN MJE /MJE SERIES TRANSISTORS MJE13009 NPN MJE 绯诲垪鏅

3.67. mje13001ah.pdf Size:315K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13001AH NPN MJE /MJE SERIES TRANSISTORS MJE13001AH NPN MJE 绯诲

3.68. mje13009a.pdf Size:252K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE 绯诲垪

3.69. mje13001.pdf Size:388K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13001 NPN MJE /MJE SERIES TRANSISTORS MJE13001 NPN MJE 绯诲垪鏅

3.70. mje13002aht.pdf Size:365K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE / MJE SERIES TRANSISTORS MJE13002AHT NPN MJE / MJE SERIES TRANSISTORS MJE13002AHT NPN MJE

3.71. mje13003br.pdf Size:385K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR NPN MJE /MJE SERIES TRANSISTORS MJE13003BR NPN MJE 绯诲

3.72. mje13002aht_1.pdf Size:445K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE / MJE NPN SERIES TRANSISTORS MJE13002AHT NPN MJE / MJE NPN SERIES TRANSISTORS MJE13002AHT

3.73. mje13003b.pdf Size:206K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE 绯诲垪

3.74. mje13003brh.pdf Size:385K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJ

3.75. mje13001h.pdf Size:313K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN BUL / BUL SERIES TRANSISTORS MJE13001H NPN BUL / BUL SERIES TRANSISTORS MJE13001H NPN BUL 绯诲

3.76. mje13003d_1.pdf Size:232K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13003D NPN D / D SERIES TRANSISTORS MJE13003D NPN D 绯诲垪鏅朵綋绠

3.77. mje13003_2.pdf Size:233K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE 绯诲垪鏅

3.78. mje13007.pdf Size:234K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13007 NPN MJE /MJE SERIES TRANSISTORS MJE13007 NPN MJE 绯诲垪鏅

3.79. mje13003d.pdf Size:477K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13003D NPN D / D SERIES TRANSISTORS MJE13003D NPN D 绯诲垪鏅朵綋绠

3.80. mje13005d.pdf Size:232K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13005D NPN D / D SERIES TRANSISTORS MJE13005D NPN D 绯诲垪鏅朵綋绠

3.81. mje13003ht_1.pdf Size:212K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJ

3.82. mje13007m.pdf Size:221K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13007M NPN MJE /MJE SERIES TRANSISTORS MJE13007M NPN MJE 绯诲垪

3.83. mje13003.pdf Size:430K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE /MJE SERIES TRANSISTORS MJE13003 NPN MJE 绯诲垪鏅

3.84. mje13003ht.pdf Size:550K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJ

3.85. mje13005.pdf Size:232K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13005 NPN MJE /MJE SERIES TRANSISTORS MJE13005 NPN MJE 绯诲垪鏅

3.86. mje13007a.pdf Size:256K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13007A NPN MJE /MJE SERIES TRANSISTORS MJE13007A NPN MJE 绯诲垪

3.87. mje13005_1.pdf Size:239K _sisemi

MJE13008
MJE13008

锘挎繁鍦虫繁鐖卞崐瀵间綋鑲′唤鏈夐檺鍏徃 浜у搧瑙勬牸涔 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13005 NPN MJE /MJE SERIES TRANSISTORS MJE13005 NPN MJE 绯诲垪鏅

3.88. mje13009zj.pdf Size:450K _blue-rocket-elect

MJE13008
MJE13008

锘縈JE13009ZJ(BR3DD13009ZJ) Rev.C Feb.-2015 DATA SHEET 鎻忚堪 / Descriptions TO-220S 濉戝皝灏佽 NPN 鍗婂浣撲笁鏋佺銆係ilicon NPN transistor in a TO-220S Plastic Package. 鐗瑰緛 / Features 楂樼數鍘嬶紝澶х數娴併 High VCEO High IC. 锛 鐢ㄩ / Applications 鐢ㄤ簬楂橀鐢靛瓙鐓ф槑鐢佃矾銆 High frequency electronic lighting ballast applications. 鍐呴儴绛夋晥鐢佃矾 / Equ

3.89. mje13002b.pdf Size:78K _first_silicon

MJE13008
MJE13008

锘縎EMICONDUCTOR MJE13002B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS : ton=0.5渭S(Max.), tf=0.7渭S(Max.), at IC=0.8A A 4 70 MAX E K B 4 80 MAX High Collector Voltage : VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _

3.90. mje13003t.pdf Size:169K _first_silicon

MJE13008
MJE13008

锘縎EMICONDUCTOR MJE13003T TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. D FEATURES E A Excellent Switching Times : ton=1.1渭S(Max.), tf=0.7渭S(Max.), at IC=1.5A C F G DIM MILLIMETERS High Collector Voltage : VCBO=700V. B A 8.3 MAX B 11.3卤0.3 C 4.15 TYP 1 2 3 D 3.2卤0.2 E 2.0卤0.2 H F 2.8卤0.1 I G 3.2卤0.1 MAXIMUM RA

3.91. mje13003_to126.pdf Size:98K _first_silicon

MJE13008
MJE13008

锘縎EMICONDUCTOR MJE13003 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. TO-126 FEATURES Excellent Switching Times : ton=1.1渭S(Max.), tf=0.7渭S(Max.), at IC=1.5A 1.BASE High Collector Voltage : VCBO=700V. 2.COLLECTOR 3.EMITTER MAXIMUM RATING (Ta=25藲C) 1 2 3 CHARACTERISTIC SYMBOL RATING UNIT VC

3.92. mje13003b.pdf Size:77K _first_silicon

MJE13008
MJE13008

锘縎EMICONDUCTOR MJE13003B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS : ton=0.5渭S(Max.), tf=0.7渭S(Max.), at IC=1A A 4 70 MAX E K B 4 80 MAX High Collector Voltage : VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _ MA

3.93. mje13005t.pdf Size:299K _first_silicon

MJE13008
MJE13008

锘縎EMICONDUCTOR MJE13005T TECHNICAL DATA MJE13005T TRANSISTOR (NPN) unit High frequency electronic lighting switching power supply applications. Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P (Ta=25鈩) 1.25 W C P (Tc=25鈩) 50 W C T 150 鈩 j T -55锝150 鈩 stg Electrical characteristics(Ta=25鈩) Rating Symbol Test condition Unit

3.94. mje13003i.pdf Size:205K _first_silicon

MJE13008
MJE13008

锘縎EMICONDUCTOR MJE13003I TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. DIM MILLIMETERS A 2.20 卤 0.2 B 1.50 卤 0.15 FEATURES c 0.5 卤 0.07 Excellent Switching Times D 6.50 卤 0.15 1 2 3 : ton=1.1渭S(Max.), tf=0.5渭S(Max.), at IC=1.0A e 2.30 typ L 7.70 卤 0.2 High Collector Voltage : VCBO=700V. A1 1.20 卤 0.05 b1 0.8 卤 0.1

3.95. mje13007f.pdf Size:286K _first_silicon

MJE13008
MJE13008

锘縎EMICONDUCTOR MJE13007F TECHNICAL DATA C MJE13007F A TRANSISTOR (NPN) SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. E DIM MILLIMETERS _ A 10 16 0 20 + HIGH SPEED DC-DC CONVERTER APPLICATION. _ B 15 00 0 20 + _ C 3 00 0 20 + FLUORESCENT LIGHT BALLASTOR APPLICATION. D 0 625卤0 125 E 3 50 typ F 2 7 typ _ G 16 80 0 4 + L M FEATURES _ H 0 45 0 1

3.96. mje13005f.pdf Size:251K _first_silicon

MJE13008
MJE13008

锘縎EMICONDUCTOR MJE13005F TECHNICAL DATA C MJE13005F TRANSISTOR (NPN) A SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. E DIM MILLIMETERS _ A 10 16 0 20 + HIGH SPEED DC-DC CONVERTER APPLICATION. _ B 15 00 0 20 + _ C 3 00 0 20 + FLUORESCENT LIGHT BALLASTOR APPLICATION. D 0 625卤0 125 E 3 50 typ F 2 7 typ _ G 16 80 0 4 + FEATURES L M _ H 0 45 0 1

3.97. mje13003d.pdf Size:299K _first_silicon

MJE13008
MJE13008

锘縎EMICONDUCTOR MJE13003D TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. A I C J FEATURES Excellent Switching Times : ton=1.1渭S(Max.), tf=0.5渭S(Max.), at IC=1.0A DIM MILLIMETERS A 6 50 卤 0 2 High Collector Voltage : VCBO=700V. B 5 60 卤 0 2 C 5 20 卤 0 2 D 1 50 卤 0 2 MAXIMUM RATING (Ta=25藲C) E 2 70 卤 0 2 F 2 30 卤 0 1

3.98. mje13003a.pdf Size:97K _first_silicon

MJE13008
MJE13008

锘縎EMICONDUCTOR MJE13003A TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS : ton=1.1渭S(Max.), tf=0.7渭S(Max.), at IC=1.5A A 4 70 MAX E K B 4 80 MAX High Collector Voltage : VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _

Datasheet: MJE1291 , MJE13002 , MJE13003 , MJE13004 , MJE13005 , MJE13006 , MJE13007 , MJE13007A , 2N5088 , MJE13009 , MJE13070 , MJE13071 , MJE1320 , MJE15028 , MJE15029 , MJE15030 , MJE15031 .

 


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