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MJE13009
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MJE13009
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MJE13009
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100DA025D .. 2N1011
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2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS3035
HEPS3047 .. HSE131
HSE133 .. IMX2
IMX3 .. K2107
K2107A .. KRA161F
KRA163F .. KRC117
KRC117M .. KRC868E
KRC868U .. KSB772-R
KSB772-Y .. KSC5020-R
KSC5020-Y .. KSE13004
KSE13005 .. KT210B
KT210V .. KT347B
KT347V .. KT644G
KT644V .. KT817G9
KT817V .. KT916B
KT918A .. KTC3103A1
KTC3103B1 .. KTX311T
KTX312T .. MD1131F
MD1132 .. MJ14002
MJ14003 .. MJE13003HT
MJE13003HV .. MJF18008
MJF2955 .. MMBT1015
MMBT123S .. MMBTA56L
MMBTA56LT1 .. MP1550A
MP1551 .. MP800
MP801 .. MPS3866
MPS3900 .. MPSW55
MPSW56 .. MT3002
MT3011 .. NA21ZX
NA21ZY .. NB021FZ
NB021H .. NB213YY
NB213Z .. NKT242L
NKT243 .. NR431DF
NR431DG .. NTE2542
NTE2543 .. P217A
P217B .. PDTA114YT
PDTA114YU .. PMD1702K
PMD1703K .. PTB20030
PTB20031 .. RCA8766D
RCA8766E .. RN1908FE
RN1908FS .. RN2962FE
RN2962FS .. S629T
S630T .. SE8520
SE8521 .. SM3174
SM3176 .. SRC1206UF
SRC1207 .. STD826
STD830CP40 .. T1344
T1346 .. TBF869
TBF870 .. TIP32F
TIP33 .. TIX620
TIX621 .. TN5143
TN5172 .. TR21
TR236 .. UN1224
UN1518 .. UPT211
UPT212 .. ZTX107CL
ZTX107CM .. ZTX549
ZTX550 .. ZXTPS720MC
 
MJE13009 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

MJE13009 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJE13009

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 100

Maximum collector-base voltage |Ucb|, V: 700

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 9

Maximum collector current |Ic max|, A: 12

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF: 160

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of MJE13009 transistor: TO220

MJE13009 Equivalent Transistors - Cross-Reference Search

MJE13009 PDF doc:

1.1. mje13009.pdf Size:451K _motorola

MJE13009
MJE13009
Order this document MOTOROLA by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009* *Motorola Preferred Device Designer's? Data Sheet 12 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS The MJE13009 is designed for highvoltage, highspeed power switching inductive 100 WATTS circuits where fall time is critical. They are particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: VCEO(sus) 400 V and 300 V Reverse Bias SOA with Inductive Loads @ TC = 100_C Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C . . . tc @ 8 A, 100_C is 120 ns (Typ). 700 V Blocking Capability SOA and Switching Applications Information. CASE 221A06 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO220AB IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII MAXIMUM RATINGS IIIIIIIIIIIIII

1.2. mje13009.pdf Size:78K _st

MJE13009
MJE13009
MJE13009 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-Emitter Voltage (IB = 0) 400 V V Collector-Emitter Voltage (V = -1.5 V) 700 V CEV BE V Emitter-Base Voltage (I = 0) 9 V EBO C IC Collector Current 12 A ICM Collector Peak Current (tp ? 10 ms) 24 A I Base Current 6 A B I Base Peak Current (t ? 10 ms) 12 A BM p I Emitter Current 18 A E IEM Emitter Peak Current 36 A o Ptot Total Power Dissipation at Tc ? 25 C 100 W o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/6 September 1997 MJE13009 THERMAL DATA o R Thermal Resistance Junction-case Max 1.25 C/W thj-ca se o ELECTRICAL CHARAC

1.3. mje13009-d.pdf Size:189K _onsemi

MJE13009
MJE13009
MJE13009G SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009G is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http://onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, 12 AMPERE Solenoid/Relay drivers and Deflection circuits. NPN SILICON Features POWER TRANSISTOR VCEO(sus) 400 V and 300 V 400 VOLTS - 100 WATTS Reverse Bias SOA with Inductive Loads @ TC = 100_C Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C tc @ 8 A, 100_C is 120 ns (Typ) 700 V Blocking Capability SOA and Switching Applications Information TO-220AB These Devices are Pb-Free and are RoHS Compliant* CASE 221A-09 STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector-Emitter Voltage VCEO(sus) 400 Vdc 3 Collector-Emitter Voltage VCEV 700 Vdc Emitter-Base Voltage VEBO 9 Vdc MARKING DIAGRAM Collector Current - Cont

1.4. mje13009.pdf Size:448K _utc

MJE13009
MJE13009
UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. FEATURES * VCEO 400V and 300 V * Reverse Bias SOA with Inductive Loads @ TC = 100? * Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100? tC @ 8 A, 100? is 120 ns (Typ). * 700 V Blocking Capability * SOA and Switching Applications Information. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13009L-TA3-T MJE13009G-TA3-T TO-220 B C E Tube MJE13009L-TF3-T MJE13009G-TF3-T TO-220F B C E Tube MJE13009L-T3P-T MJE13009G-T3P-T TO-3P B C E Tube www.unisonic.com.tw 1 of 9 Copyright

1.5. mje13009-k.pdf Size:440K _utc

MJE13009
MJE13009
UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. FEATURES * VCEO 400V and 300 V * Reverse Bias SOA with Inductive Loads @ TC = 100°C * Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100°C tC @ 8 A, 100°C is 120 ns (Typ). *?700 V Blocking Capability *?SOA and Switching Applications Information. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13009L-K-TA3-T MJE13009G-K-TA3-T TO-220 B C E Tube MJE13009L-K-T3P-T MJE13009G-K-T3P-T TO-3P B C E Tube www.unisonic.com.tw 1 of 9 Copyright © 2013 Unisonic Technologies Co., L

1.6. mje13009d.pdf Size:183K _utc

MJE13009
MJE13009
UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13009D is intended to be used in a energy-saving lights electronic ballast, high frequency switching power supplies, high frequency power transforms or common power amplifiers, etc. FEATURES * High Breakdown Voltage * High Current Capability * High Switching Speed * High Reliability * RoHS-Compliant Product INTERNAL SCHEMATIC DIAGRAM C (2) B (1) E (3) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 MJE13009DL-TA3-T MJE13009DG-TA3-T TO-220 B C E Tube www.unisonic.com.tw 1 of 5 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R203-041.A MJE13009D NP

1.7. mje13009-p.pdf Size:424K _utc

MJE13009
MJE13009
UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. FEATURES * VCEO 400V and 300 V * Reverse Bias SOA with Inductive Loads @ TC = 100°C * Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100°C tC @ 8 A, 100°C is 120 ns (Typ). * 700 V Blocking Capability * SOA and Switching Applications Information. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13009L-P-T3P-T MJE13009G-P-T3P-T TO-3P B C E Tube MJE13009L-P-TA3-T MJE13009G-P-TA3-T TO-220 B C E Tube www.unisonic.com.tw 1 of 9 Copyright © 2013 Unisonic Technologies Co., L

1.8. mje13009.pdf Size:272K _kec

MJE13009
MJE13009
SEMICONDUCTOR MJE13009 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC DC 12 Collector Current A ICP Pulse 24 IB Base Current 6 A Collector Power Dissipation PC 100 W (Tc=25 ) Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 1 mA hFE(1) (Note) VCE=5V, IC=5A 14 - 28 DC Current Gain hFE(2) VCE=5V, IC=8A 6 - - IC=5A, IB=1A - - 1 Collector-Emitter VCE(sat) IC=8A, IB=1.6A - - 1.5 V Saturation Voltage IC=12A, IB=3

1.9. mje13009f.pdf Size:280K _kec

MJE13009
MJE13009
SEMICONDUCTOR MJE13009F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC DC 12 Collector Current A ICP Pulse 24 IB Base Current 6 A Collector Power Dissipation PC 50 W (Tc=25 ) Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 1 mA hFE(1) (Note) VCE=5V, IC=5A 14 - 28 DC Current Gain hFE(2) VCE=5V, IC=8A 6 - - IC=5A, IB=1A - - 1 Collector-Emitter VCE(sat) IC=8A, IB=1.6A - - 1.5 V Saturation Voltage IC=12A, IB=3

1.10. mje13009.pdf Size:157K _inchange_semiconductor

MJE13009
MJE13009
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE13009 Ў¤ Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IE IEM IB IBM PD Tj Tstg IN Collector-base voltage Collector-emitter voltage PARAMETER Emitter-base voltage Collector current (DC) Collector current-Peak CHA E SEM NG Open base Open emitter Open collector OND IC CONDITIONS TOR UC VALUE 700 400 9 12 24 18 36 6 12 UNIT V V V A A A A A A W Emitter current Emitter current-Peak Base current Base current-Peak Ta=25Ўж Total power dissipation TC=25Ўж Junction temperature Storage temperature 2

1.11. mje13009f.pdf Size:143K _inchange_semiconductor

MJE13009
MJE13009
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE13009F DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7?s(Max.)@ IC= 8.0A APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 12 A ICM Collector Current-peak 24 A IBB Base Current 6 A IBM Base Current-Peak 12 A Collector Power Dissipation PC TC=25? 50 W Junction Temperature 150 ? Ti Storage Temperature Range -65~150 ? T

1.12. hmje13009a.pdf Size:55K _hsmc

MJE13009
MJE13009
Spec. No. : HE200206 HI-SINCERITY Issued Date : 2002.02.01 Revised Date : 2006.07.04 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch-controls, Solenoid/Relay drivers and Deflectioncircuits. TO-220AB Specification Features • VCEO(sus)=400V • Reverse Bias SOA with Inductive Loads @TC=100°C • Inductive Switching Matrix 3 to 12 Amp., 25 and 100°C…tc@8A, 100°C is 120ns(Typ.) • 700V Blocking Capability • SOA and Switching Applications Information Absolute Maximum Ratings Characteristic Symbol Max. Unit Collector-Emitter Voltage VCEO(sus) 400 Vdc Collector-Base Voltage VCBO 700 Vdc Emitter-Base Voltage VEBO 9Vd Collector Current-Continuous IC 12 Adc Collector Current-Peak* ICM 24 Adc Base Current-Continuous IB 6Adc Base Current-Pe

1.13. mje13009.pdf Size:206K _sisemi

MJE13009
MJE13009
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009 NPN MJE /MJE SERIES TRANSISTORS MJE13009 NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13009 NPN MJE /MJE SERIES TRANSISTORS MJE13009 RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS ●FEATURES FEATURES FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 开关电源 APPLICATION: APPLICATION: ●APPLICATION: ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION: ■SWITCH MODE POWER SUPPLY Tc=25°C Tc=25°C ●最大额定值(Tc=25°C Tc=25°C) Absolute

1.14. mje13009a_1.pdf Size:207K _sisemi

MJE13009
MJE13009
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS ●FEATURES FEATURES FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 开关电源 APPLICATION: APPLICATION: ●APPLICATION: ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION: ■ SWITCH MODE POWER SUPPLY Tc=25°C Tc=25°C ●最大额定值(Tc=25°C Tc=25°C) Abs

1.15. mje13009a.pdf Size:252K _sisemi

MJE13009
MJE13009
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS ●FEATURES FEATURES FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 开关电源 APPLICATION: APPLICATION: ●APPLICATION: ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION: ■ SWITCH MODE POWER SUPPLY Tc=25°C Tc=25°C ●最大额定值(Tc=25°C Tc=25°C) Abs

See also transistors datasheet: MJE13002 , MJE13003 , MJE13004 , MJE13005 , MJE13006 , MJE13007 , MJE13007A , MJE13008 , MPSA42 , MJE13070 , MJE13071 , MJE1320 , MJE15028 , MJE15029 , MJE15030 , MJE15031 , MJE16002 .

Keywords

 MJE13009 Datasheet  MJE13009 Datenblatt  MJE13009 RoHS  MJE13009 Distributor
 MJE13009 Application Notes  MJE13009 Component  MJE13009 Circuit  MJE13009 Schematic
 MJE13009 Equivalent  MJE13009 Cross Reference  MJE13009 Data Sheet  MJE13009 Fiche Technique

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