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MJE13009 Transistor (IC) Datasheet. Cross Reference Search. MJE13009 Equivalent

Type Designator: MJE13009

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 100

Maximum collector-base voltage |Ucb|, V: 700

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 9

Maximum collector current |Ic max|, A: 12

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF: 160

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of MJE13009 transistor: TO220

MJE13009 Transistor Equivalent Substitute - Cross-Reference Search

MJE13009 PDF:

1.1. mje13009.pdf Size:451K _motorola

MJE13009
MJE13009

Order this document MOTOROLA by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009* *Motorola Preferred Device Designer's? Data Sheet 12 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS The MJE13009 is designed for highvoltage, highspeed power switching inductive 100 WATTS circuits where fall time is critical. They are particularly suited

1.2. mje13009.pdf Size:78K _st

MJE13009
MJE13009

MJE13009 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-Emitt

1.3. mje13009-d.pdf Size:189K _onsemi

MJE13009
MJE13009

MJE13009G SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009G is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http://onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, 12 AMPERE Solenoid/Relay drivers and Deflection circuits. NPN SILI

1.4. mje13009d.pdf Size:183K _utc

MJE13009
MJE13009

UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13009D is intended to be used in a energy-saving lights

1.5. mje13009.pdf Size:448K _utc

MJE13009
MJE13009

UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Re

1.6. mje13009-k.pdf Size:440K _utc

MJE13009
MJE13009

UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoi

1.7. mje13009-p.pdf Size:424K _utc

MJE13009
MJE13009

UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoi

1.8. mje13009.pdf Size:272K _kec

MJE13009
MJE13009

SEMICONDUCTOR MJE13009 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VC

1.9. mje13009f.pdf Size:280K _kec

MJE13009
MJE13009

SEMICONDUCTOR MJE13009F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V V

1.10. mje13009.pdf Size:157K _inchange_semiconductor

MJE13009
MJE13009

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitte

1.11. mje13009f.pdf Size:143K _inchange_semiconductor

MJE13009
MJE13009

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE13009F DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7?s(Max.)@ IC= 8.0A APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit

1.12. hmje13009a.pdf Size:55K _hsmc

MJE13009
MJE13009

Spec. No. : HE200206 HI-SINCERITY Issued Date : 2002.02.01 Revised Date : 2006.07.04 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch-controls, Solenoid/Relay driver

1.13. mje13009a_1.pdf Size:207K _sisemi

MJE13009
MJE13009

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE 系列

1.14. mje13009.pdf Size:206K _sisemi

MJE13009
MJE13009

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009 NPN MJE /MJE SERIES TRANSISTORS MJE13009 NPN MJE 系列

1.15. mje13009a.pdf Size:252K _sisemi

MJE13009
MJE13009

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE 系列

1.16. mje13009zj.pdf Size:450K _blue-rocket-elect

MJE13009
MJE13009

MJE13009ZJ(BR3DD13009ZJ) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220S 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220S Plastic Package. 特征 / Features 高电压,大电流。 High VCEO High IC. , 用途 / Applications 用于高频电子照明电路。 High frequency electronic lighting ballast applications. 内部等效电路 / Equ

See also transistors datasheet: MJE13002 , MJE13003 , MJE13004 , MJE13005 , MJE13006 , MJE13007 , MJE13007A , MJE13008 , MPSA42 , MJE13070 , MJE13071 , MJE1320 , MJE15028 , MJE15029 , MJE15030 , MJE15031 , MJE16002 .

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