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MJE13009
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100DA025D .. 2N1011
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2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTB989
KTC1001 .. KTN2222AE
KTN2222AS .. MCH4009
MCH4013 .. MJ11012
MJ11013 .. MJD47T4
MJD47TF .. MJE6044
MJE6045 .. MMBC1321Q4
MMBC1321Q5 .. MMBT6520L
MMBT6521L .. MP14B
MP14I .. MP5137
MP5138 .. MPS3397
MPS3398 .. MPSH54
MPSH55 .. MRF9511LT1
MRF957T1 .. NA12HG
NA12HH .. NB014EK
NB014EL .. NB212YH
NB212YI .. NKT13429
NKT135 .. NPS5449
NPS5550 .. NTE22
NTE226 .. OC822
OC823 .. PBSS5320T
PBSS5320X .. PMBT2369
PMBT2907 .. PRF949
PRF957 .. RCA1A16
RCA1A17 .. RN16J1
RN1701 .. RN2901AFS
RN2901FE .. S1770
S1784 .. SDT9303
SDT9304 .. SJ5436
SJ5437 .. SRA2219EF
SRA2219M .. STC5554
STC5555 .. SZD31CNPN
SZD31CPNP .. TA2511
TA2512 .. TIP145
TIP145F .. TIS45
TIS47 .. TN4122
TN4123 .. TP930A
TP930R .. UN1110S
UN1111 .. UN921BJ
UN921CJ .. ZT404P
ZT41 .. ZTX4403K
ZTX4403L .. ZXTP558L
ZXTP717MA .. ZXTPS720MC
 
MJE13009 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

MJE13009 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJE13009

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 100

Maximum collector-base voltage |Ucb|, V: 700

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 9

Maximum collector current |Ic max|, A: 12

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF: 160

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of MJE13009 transistor: TO220

MJE13009 Equivalent Transistors - Cross-Reference Search

MJE13009 PDF doc:

1.1. mje13009.pdf Size:451K _motorola

MJE13009
MJE13009
Order this document MOTOROLA by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009* *Motorola Preferred Device Designer's? Data Sheet 12 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS The MJE13009 is designed for highvoltage, highspeed power switching inductive 100 WATTS circuits where fall time is critical. They are particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: VCEO(sus) 400 V and 300 V Reverse Bias SOA with Inductive Loads @ TC = 100_C Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C . . . tc @ 8 A, 100_C is 120 ns (Typ). 700 V Blocking Capability SOA and Switching Applications Information. CASE 221A06 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO220AB IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII MAXIMUM RATINGS IIIIIIIIIIIIII

1.2. mje13009.pdf Size:78K _st

MJE13009
MJE13009
MJE13009 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-Emitter Voltage (IB = 0) 400 V V Collector-Emitter Voltage (V = -1.5 V) 700 V CEV BE V Emitter-Base Voltage (I = 0) 9 V EBO C IC Collector Current 12 A ICM Collector Peak Current (tp ? 10 ms) 24 A I Base Current 6 A B I Base Peak Current (t ? 10 ms) 12 A BM p I Emitter Current 18 A E IEM Emitter Peak Current 36 A o Ptot Total Power Dissipation at Tc ? 25 C 100 W o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/6 September 1997 MJE13009 THERMAL DATA o R Thermal Resistance Junction-case Max 1.25 C/W thj-ca se o ELECTRICAL CHARAC

1.3. mje13009-d.pdf Size:189K _onsemi

MJE13009
MJE13009
MJE13009G SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009G is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http://onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, 12 AMPERE Solenoid/Relay drivers and Deflection circuits. NPN SILICON Features POWER TRANSISTOR VCEO(sus) 400 V and 300 V 400 VOLTS - 100 WATTS Reverse Bias SOA with Inductive Loads @ TC = 100_C Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C tc @ 8 A, 100_C is 120 ns (Typ) 700 V Blocking Capability SOA and Switching Applications Information TO-220AB These Devices are Pb-Free and are RoHS Compliant* CASE 221A-09 STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector-Emitter Voltage VCEO(sus) 400 Vdc 3 Collector-Emitter Voltage VCEV 700 Vdc Emitter-Base Voltage VEBO 9 Vdc MARKING DIAGRAM Collector Current - Cont

1.4. mje13009.pdf Size:448K _utc

MJE13009
MJE13009
UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. FEATURES * VCEO 400V and 300 V * Reverse Bias SOA with Inductive Loads @ TC = 100? * Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100? tC @ 8 A, 100? is 120 ns (Typ). * 700 V Blocking Capability * SOA and Switching Applications Information. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13009L-TA3-T MJE13009G-TA3-T TO-220 B C E Tube MJE13009L-TF3-T MJE13009G-TF3-T TO-220F B C E Tube MJE13009L-T3P-T MJE13009G-T3P-T TO-3P B C E Tube www.unisonic.com.tw 1 of 9 Copyright

1.5. mje13009-k.pdf Size:440K _utc

MJE13009
MJE13009
UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. FEATURES * VCEO 400V and 300 V * Reverse Bias SOA with Inductive Loads @ TC = 100°C * Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100°C tC @ 8 A, 100°C is 120 ns (Typ). *?700 V Blocking Capability *?SOA and Switching Applications Information. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13009L-K-TA3-T MJE13009G-K-TA3-T TO-220 B C E Tube MJE13009L-K-T3P-T MJE13009G-K-T3P-T TO-3P B C E Tube www.unisonic.com.tw 1 of 9 Copyright © 2013 Unisonic Technologies Co., L

1.6. mje13009d.pdf Size:183K _utc

MJE13009
MJE13009
UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13009D is intended to be used in a energy-saving lights electronic ballast, high frequency switching power supplies, high frequency power transforms or common power amplifiers, etc. FEATURES * High Breakdown Voltage * High Current Capability * High Switching Speed * High Reliability * RoHS-Compliant Product INTERNAL SCHEMATIC DIAGRAM C (2) B (1) E (3) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 MJE13009DL-TA3-T MJE13009DG-TA3-T TO-220 B C E Tube www.unisonic.com.tw 1 of 5 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R203-041.A MJE13009D NP

1.7. mje13009-p.pdf Size:424K _utc

MJE13009
MJE13009
UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. FEATURES * VCEO 400V and 300 V * Reverse Bias SOA with Inductive Loads @ TC = 100°C * Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100°C tC @ 8 A, 100°C is 120 ns (Typ). * 700 V Blocking Capability * SOA and Switching Applications Information. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13009L-P-T3P-T MJE13009G-P-T3P-T TO-3P B C E Tube MJE13009L-P-TA3-T MJE13009G-P-TA3-T TO-220 B C E Tube www.unisonic.com.tw 1 of 9 Copyright © 2013 Unisonic Technologies Co., L

1.8. mje13009.pdf Size:272K _kec

MJE13009
MJE13009
SEMICONDUCTOR MJE13009 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC DC 12 Collector Current A ICP Pulse 24 IB Base Current 6 A Collector Power Dissipation PC 100 W (Tc=25 ) Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 1 mA hFE(1) (Note) VCE=5V, IC=5A 14 - 28 DC Current Gain hFE(2) VCE=5V, IC=8A 6 - - IC=5A, IB=1A - - 1 Collector-Emitter VCE(sat) IC=8A, IB=1.6A - - 1.5 V Saturation Voltage IC=12A, IB=3

1.9. mje13009f.pdf Size:280K _kec

MJE13009
MJE13009
SEMICONDUCTOR MJE13009F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC DC 12 Collector Current A ICP Pulse 24 IB Base Current 6 A Collector Power Dissipation PC 50 W (Tc=25 ) Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 1 mA hFE(1) (Note) VCE=5V, IC=5A 14 - 28 DC Current Gain hFE(2) VCE=5V, IC=8A 6 - - IC=5A, IB=1A - - 1 Collector-Emitter VCE(sat) IC=8A, IB=1.6A - - 1.5 V Saturation Voltage IC=12A, IB=3

1.10. mje13009.pdf Size:157K _inchange_semiconductor

MJE13009
MJE13009
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE13009 Ў¤ Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IE IEM IB IBM PD Tj Tstg IN Collector-base voltage Collector-emitter voltage PARAMETER Emitter-base voltage Collector current (DC) Collector current-Peak CHA E SEM NG Open base Open emitter Open collector OND IC CONDITIONS TOR UC VALUE 700 400 9 12 24 18 36 6 12 UNIT V V V A A A A A A W Emitter current Emitter current-Peak Base current Base current-Peak Ta=25Ўж Total power dissipation TC=25Ўж Junction temperature Storage temperature 2

1.11. mje13009f.pdf Size:143K _inchange_semiconductor

MJE13009
MJE13009
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE13009F DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7?s(Max.)@ IC= 8.0A APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 12 A ICM Collector Current-peak 24 A IBB Base Current 6 A IBM Base Current-Peak 12 A Collector Power Dissipation PC TC=25? 50 W Junction Temperature 150 ? Ti Storage Temperature Range -65~150 ? T

1.12. hmje13009a.pdf Size:55K _hsmc

MJE13009
MJE13009
Spec. No. : HE200206 HI-SINCERITY Issued Date : 2002.02.01 Revised Date : 2006.07.04 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch-controls, Solenoid/Relay drivers and Deflectioncircuits. TO-220AB Specification Features • VCEO(sus)=400V • Reverse Bias SOA with Inductive Loads @TC=100°C • Inductive Switching Matrix 3 to 12 Amp., 25 and 100°C…tc@8A, 100°C is 120ns(Typ.) • 700V Blocking Capability • SOA and Switching Applications Information Absolute Maximum Ratings Characteristic Symbol Max. Unit Collector-Emitter Voltage VCEO(sus) 400 Vdc Collector-Base Voltage VCBO 700 Vdc Emitter-Base Voltage VEBO 9Vd Collector Current-Continuous IC 12 Adc Collector Current-Peak* ICM 24 Adc Base Current-Continuous IB 6Adc Base Current-Pe

1.13. mje13009.pdf Size:206K _sisemi

MJE13009
MJE13009
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009 NPN MJE /MJE SERIES TRANSISTORS MJE13009 NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13009 NPN MJE /MJE SERIES TRANSISTORS MJE13009 RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS ●FEATURES FEATURES FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 开关电源 APPLICATION: APPLICATION: ●APPLICATION: ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION: ■SWITCH MODE POWER SUPPLY Tc=25°C Tc=25°C ●最大额定值(Tc=25°C Tc=25°C) Absolute

1.14. mje13009a_1.pdf Size:207K _sisemi

MJE13009
MJE13009
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS ●FEATURES FEATURES FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 开关电源 APPLICATION: APPLICATION: ●APPLICATION: ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION: ■ SWITCH MODE POWER SUPPLY Tc=25°C Tc=25°C ●最大额定值(Tc=25°C Tc=25°C) Abs

1.15. mje13009a.pdf Size:252K _sisemi

MJE13009
MJE13009
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A RoHS RoHS ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 RoHS ●FEATURES FEATURES FEATURES FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●应用:节能灯 电子镇流器 电子变压器 开关电源 APPLICATION: APPLICATION: ●APPLICATION: ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER APPLICATION: ■ SWITCH MODE POWER SUPPLY Tc=25°C Tc=25°C ●最大额定值(Tc=25°C Tc=25°C) Abs

See also transistors datasheet: MJE13002 , MJE13003 , MJE13004 , MJE13005 , MJE13006 , MJE13007 , MJE13007A , MJE13008 , MPSA42 , MJE13070 , MJE13071 , MJE1320 , MJE15028 , MJE15029 , MJE15030 , MJE15031 , MJE16002 .

Keywords

 MJE13009 Datasheet  MJE13009 Datenblatt  MJE13009 RoHS  MJE13009 Distributor
 MJE13009 Application Notes  MJE13009 Component  MJE13009 Circuit  MJE13009 Schematic
 MJE13009 Equivalent  MJE13009 Cross Reference  MJE13009 Data Sheet  MJE13009 Fiche Technique

 

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