All Transistors Datasheet

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJE13070/13071 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)- MJE13070 = 450V(Min)- MJE13071 · Collector-Emitter Saturation Voltage- : VCE(sat) = 3.0V(Min)@IC= 5A APPLICATIONS ·Designed for high-voltage, high-speed, power switching in inductive circuits, where fall time is critical.They are partic- ularly suited for line-operated switchmode applications su- ch as switching regulators , inverters , DC-DC converter, motor controls, solenoid drive and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT MJE13070 650 Collector-Emitter VCEV V Voltage MJE13071 750 MJE13070 400 VCEO Collector-Emitter V Voltage MJE13071 450 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IBB Base Current 2 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junctio

4.1. mje13002.pdf Size:304K _motorola

Order this document MOTOROLA by MJE13002/D SEMICONDUCTOR TECHNICAL DATA * MJE13002 MJE13003* Designer's? Data Sheet *Motorola Preferred Device SWITCHMODE Series 1.5 AMPERE NPN SILICON NPN Silicon Power Transistors POWER TRANSISTORS 300 AND 400 VOLTS These devices are designed for high�voltage, high�speed power switching 40 WATTS inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: � Reverse Biased SOA with Inductive Loads @ TC = 100_C � Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100_C . . . tc @ 1 A, 100_C is 290 ns (Typ). � 700 V Blocking Capability � SOA and Switching Applications Information. IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII CASE 77�08 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIII IIIIII IIIIII TO�225AA TYPE IIIIIIIIIIIIIIIIIIIIIIIII

4.2. mje13009.pdf Size:451K _motorola

Order this document MOTOROLA by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009* *Motorola Preferred Device Designer's? Data Sheet 12 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS The MJE13009 is designed for high�voltage, high�speed power switching inductive 100 WATTS circuits where fall time is critical. They are particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: � VCEO(sus) 400 V and 300 V � Reverse Bias SOA with Inductive Loads @ TC = 100_C � Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C . . . tc @ 8 A, 100_C is 120 ns (Typ). � 700 V Blocking Capability � SOA and Switching Applications Information. CASE 221A�06 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO�220AB IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII MAXIMUM RATINGS IIIIIIIIIIIIII

4.3. mje13005.pdf Size:311K _motorola

Order this document MOTOROLA by MJE13005/D SEMICONDUCTOR TECHNICAL DATA * MJE13005 *Motorola Preferred Device Designer's? Data Sheet 4 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS These devices are designed for high�voltage, high�speed power switching 75 WATTS inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator�s, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: � VCEO(sus) 400 V � Reverse Bias SOA with Inductive Loads @ TC = 100_C � Inductive Switching Matrix 2 to 4 Amp, 25 and 100_C . . . tc @ 3A, 100_C is 180 ns (Typ) � 700 V Blocking Capability � SOA and Switching Applications Information. CASE 221A�06 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO�220AB IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIII

4.4. mje13007.pdf Size:337K _motorola

Order this document MOTOROLA by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE? NPN Bipolar Power Transistor POWER TRANSISTOR For Switching Power Supply Applications 8.0 AMPERES 400 VOLTS The MJE/MJF13007 is designed for high�voltage, high�speed power switching 80/40 WATTS inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. � VCEO(sus) 400 V � Reverse Bias SOA with Inductive Loads @ TC = 100�C � 700 V Blocking Capability � SOA and Switching Applications Information � Two Package Choices: Standard TO�220 or Isolated TO�220 � MJF13007 is UL Recognized to 3500 VRMS, File #E69369 MAXIMUM RATINGS Rating Symbol MJE13007 MJF13007 Unit Collector�Emitter Sustaining Voltage VCEO 400 Vdc Collector�Emitter Breakdown Voltage VCES 700 Vdc Emitter�Base Voltage VEB

4.5. mje13009.pdf Size:78K _st

MJE13009 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-Emitter Voltage (IB = 0) 400 V V Collector-Emitter Voltage (V = -1.5 V) 700 V CEV BE V Emitter-Base Voltage (I = 0) 9 V EBO C IC Collector Current 12 A ICM Collector Peak Current (tp ? 10 ms) 24 A I Base Current 6 A B I Base Peak Current (t ? 10 ms) 12 A BM p I Emitter Current 18 A E IEM Emitter Peak Current 36 A o Ptot Total Power Dissipation at Tc ? 25 C 100 W o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/6 September 1997 MJE13009 THERMAL DATA o R Thermal Resistance Junction-case Max 1.25 C/W thj-ca se o ELECTRICAL CHARAC

4.6. mje13007a.pdf Size:63K _st

MJE13007A SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL DESCRIPTION 3 The MJE13007A is silicon multiepitaxial mesa 2 1 NPN power transistor mounted in Jedec TO-220 plastic package. TO-220 They are inteded for use in motor control, switching regulators etc. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEV Collector-Emitter Voltage (VBE = -1.5V) 850 V VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0) 9 V I Collector Current 8 A C ICM Collector Peak Current 16 A IB Base Current 4 A IBM Base Peak Current 8 A IE Emitter Current 12 A IEM Emitter Peak Current 24 A P Total Dissipation at T ? 25 oC80 W tot c o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j 1/4 June 1997 MJE13007A THERMAL DATA o Rthj-case Thermal Resistance Junction

4.7. mje13005.pdf Size:60K _st

MJE13005 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13005 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package particularly intended for switch-mode applications. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V 700 V CEV Collector-Emitter Voltage VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0) 9V IC Collector Current 4A I 8A CM Collector Peak Current I 2A B Base Current IBM 4A Base Peak Current Ptot Total Power Dissipation at Tcase ? 25 oC 75 W o Tstg Storage Temperature -65 to +150 C o Tj Max. Operating Junction Temperature 150 C 1/4 October 1995 MJE13005 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 1.67 C/W ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit 1 mA V = 700V CE ICEV Collector Cut-off Curre

4.8. mje13007.pdf Size:29K _st

MJE13007 ? SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL DESCRIPTION 3 2 The MJE13007 is a silicon multiepitaxial mesa 1 NPN power transistor mounted in Jedec TO-220 plastic package. TO-220 It is are inteded for use in motor control, switching regulators etc. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEV Collector-Emitter Voltage (VBE = -1.5V) 700 V V Collector-Emitter Voltage (I = 0) 400 V CEO B VEBO Emitter-Base Voltage (IC = 0) 9 V IC Collector Current 8 A I Collector Peak Current 16 A CM I Base Current 4 A B I Base Peak Current 8 A BM IE Emitter Current 12 A IEM Emitter Peak Current 24 A o P Total Dissipation at T ? 25 C80 W tot c o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j 1/4 June 1998 MJE13007 THERMAL DATA o Rthj-case Thermal Resistance J

4.9. mje13004_mje13005.pdf Size:72K _central

DATA SHEET MJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25�C unless otherwise noted) SYMBOL MJE13004 MJE13005 UNITS Collector-Emitter Voltage VCEO 300 400 V Collector-Emitter Voltage VCEV 600 700 V Emitter-Base Voltage VEBO 9.0 V Collector Current IC 4.0 A Peak Collector Current ICM 8.0 A Base Current IB 2.0 A Peak Base Current IBM 4.0 A Power Dissipation (TA=25�C) PD 2.0 W Power Dissipation PD 75 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 �C Thermal Resistance ?JA 62.5 �C/W Thermal Resistance ?JC 1.67 �C/W ELECTRICAL CHARACTERISTICS (TC=25�C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICEV VCE=600V, VBE(OFF)=1.5V (MJE13004) 1.0 mA ICEV VCE=600V, VBE(OFF)=1.5V, TC=100�C (MJE13004) 5.0 mA ICEV VCE=700V, VBE(OFF)=1.

4.10. mje13005.pdf Size:114K _central

DATA SHEET MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25�C unless otherwise noted) SYMBOL UNITS Collector-Emitter Voltage VCEO 400 V Collector-Emitter Voltage VCEV 700 V Emitter-Base Voltage VEBO 9.0 V Collector Current IC 4.0 A Peak Collector Current ICM 8.0 A Base Current IB 2.0 A Peak Base Current IBM 4.0 A Emitter Current IE 6.0 A Peak Emitter Current IEM 12 A Power Dissipation (TA=25�C) PD 2.0 W Power Dissipation PD 75 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 �C Thermal Resistance ?JA 62.5 �C/W Thermal Resistance ?JC 1.67 �C/W ELECTRICAL CHARACTERISTICS (TC=25�C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEV VCE=700V, VBE(OFF)=1.5V 1.0 mA ICEV VCE=700V, VBE(OFF)=1.5V, TC=100�C 5.0 mA IEBO VEB=9.0V 1.0 mA BVCEO IC=10mA 400 V VC

4.11. mje13005g.pdf Size:150K _onsemi

MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http://onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator�s, Inverters, Motor Controls, 4 AMPERE Solenoid/Relay drivers and Deflection circuits. NPN SILICON Features POWER TRANSISTOR � VCEO(sus) 400 V 400 VOLTS - 75 WATTS � Reverse Bias SOA with Inductive Loads @ TC = 100_C � Inductive Switching Matrix 2 to 4 A, 25 and 100_C tc @ 3A, 100_C is 180 ns (Typ) � 700 V Blocking Capability � SOA and Switching Applications Information TO-220AB � These Devices are Pb-Free and are RoHS Compliant* CASE 221A-09 STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector-Emitter Voltage VCEO(sus) 400 Vdc 3 Collector-Emitter Voltage VCEV 700 Vdc Emitter-Base Voltage VEBO 9 Vdc MARKING DIAGRAM Collector Current - Continuous IC 4 Ad

4.12. mje13003.pdf Size:107K _onsemi

MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http://onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Features NPN SILICON POWER � Reverse Biased SOA with Inductive Loads @ TC = 100_C TRANSISTORS � Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C 300 AND 400 VOLTS tc @ 1 A, 100_C is 290 ns (Typ) � 700 V Blocking Capability 40 WATTS � SOA and Switching Applications Information � Pb-Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO(sus) 400 Vdc IIIIIIIIIIII IIII III III TO-225 Collector-Emitter Voltage VCEVIIII Vdc 700 IIIIIIIIIIII IIIIIIIIIIII IIII III III III III CASE 77 Emitter Base Voltage VEBO 9 Vdc STYLE 3 IIIIIIIIIIII

4.13. mje13007-d.pdf Size:194K _onsemi

MJE13007G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007G is designed for high-voltage, high-speed power http://onsemi.com switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay POWER TRANSISTOR drivers and Deflection circuits. 8.0 AMPERES 400 VOLTS - 80 WATTS Features � VCEO(sus) 400 V � Reverse Bias SOA with Inductive Loads @ TC = 100�C � 700 V Blocking Capability � SOA and Switching Applications Information � Standard TO-220 � These Devices are Pb-Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Sustaining Voltage VCEO 400 Vdc TO-220AB CASE 221A-09 Collector-Base Breakdown Voltage VCES 700 Vdc STYLE 1 Emitter-Base Voltage VEBO 9.0 Vdc Collector Current - Continuous IC 8.0 Adc - Peak (Note 1) ICM 16 1 2 3 Base Current - Continu

4.14. mje13009-d.pdf Size:189K _onsemi

MJE13009G SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009G is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http://onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, 12 AMPERE Solenoid/Relay drivers and Deflection circuits. NPN SILICON Features POWER TRANSISTOR � VCEO(sus) 400 V and 300 V 400 VOLTS - 100 WATTS � Reverse Bias SOA with Inductive Loads @ TC = 100_C � Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C tc @ 8 A, 100_C is 120 ns (Typ) � 700 V Blocking Capability � SOA and Switching Applications Information TO-220AB � These Devices are Pb-Free and are RoHS Compliant* CASE 221A-09 STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector-Emitter Voltage VCEO(sus) 400 Vdc 3 Collector-Emitter Voltage VCEV 700 Vdc Emitter-Base Voltage VEBO 9 Vdc MARKING DIAGRAM Collector Current - Cont

4.15. mje13003.pdf Size:53K _kec

SEMICONDUCTOR MJE13003 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A B HIGH VOLTAGE AND HIGH SPEED D C SWITCHING APPLICATION. E F FEATURES ·Excellent Switching Times G : ton=1.1? S(Max.), at IC=1A S(Max.), tf=0.7? H ·High Collector Voltage : VCBO=700V. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 _ + F 11.0 0.3 MAXIMUM RATING (Ta=25?) G 2.9 MAX M H 1.0 MAX CHARACTERISTIC SYMBOL RATING UNIT J 1.9 MAX O + _ K 0.75 0.15 N P VCBO Collector-Base Voltage 700 V _ + L 15.50 0.5 1 2 3 _ + M 2.3 0.1 VCEO Collector-Emitter Voltage 400 V _ + N 0.65 0.15 O 1.6 1. EMITTER VEBO Emitter-Base Voltage 9 V P 3.4 MAX 2. COLLECTOR 3. BASE IC DC 1.5 Collector Current A ICP Pulse 3 TO-126 IB Base Current 0.75 A 1.5 Ta=25? Collector Power PC W Dissipation 20 Tc=25? Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?)

4.16. mje13004d.pdf Size:366K _kec

SEMICONDUCTOR MJE13004D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A B D HIGH VOLTAGE AND HIGH SPEED C SWITCHING APPLICATION. E F FEATURES G ·Built-in Free Wheeling Diode H ·Suitable for Electrouic Ballast Application DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 MAXIMUM RATING (Ta=25?) _ + F 11.0 0.3 G 2.9 MAX CHARACTERISTIC SYMBOL RATING UNIT M H 1.0 MAX J 1.9 MAX O + _ VCBO K 0.75 0.15 Collector-Base Voltage 700 V N P _ + L 15.50 0.5 1 2 3 _ + M 2.3 0.1 VCEO Collector-Emitter Voltage 400 V _ + N 0.65 0.15 O 1.6 1. EMITTER VEBO Emitter-Base Voltage 9 V P 3.4 MAX 2. COLLECTOR 3. BASE IC DC 4 Collector Current A ICP Pulse 8 TO-126 IB Base Current 2 A Collector Power Dissipation PC 30 W (Tc=25?) Equivalent Circuit Tj Junction Temperature 150 C ? Tstg -55?150 ? Storage Temperature Range B E ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST

4.17. mje13005d.pdf Size:51K _kec

SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A Built-in Free wheeling Diode makes efficient anti saturation operation. O C Suitable for half bridge light ballast Applications. F DIM MILLIMETERS Low base drive requirement. E _ G A 9.9 + 0.2 MAXIMUM RATING (Ta=25 ) B 15.95 MAX B C 1.3+0.1/-0.05 Q _ CHARACTERISTIC SYMBOL RATING UNIT D 0.8 0.1 + I _ E 3.6 + 0.2 VCBO _ Collector-Base Voltage 800 V F + 2.8 0.1 K P 3.7 G VCEO Collector-Emitter Voltage 400 V M H 0.5+0.1/-0.05 L 1.5 I VEBO J Emitter-Base Voltage 10 V _ + J 13.08 0.3 D K 1.46 IC DC 5 _ H L 1.4 0.1 + N N Collector Current A _ + M 1.27 0.1 1 2 3 ICP Pulse 10 _ + N 2.54 0.2 _ + O 4.5 0.2 IB Base Current 2 A _ + P 2.4 0.2 1. BASE _ 9.2 + 0.2 Q 2. COLLECTOR 1 2 3 PC 75 W Collector Power Dissipation (Tc=25 ) 3. EMITTER Tj Junction Temperature 150 Tstg -55 150 Storage Temperature R

4.18. mje13007f.pdf Size:351K _kec

SEMICONDUCTOR MJE13007F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES ·Excellent Switching Times : ton=1.6? S(Max.), at IC=5A S(Max.), tf=0.7? ·High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC DC 8 Collector Current A ICP Pulse 16 IB Base Current 4 A Collector Power Dissipation PC 40 W (Tc=25?) Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 1 mA hFE(1) (Note) VCE=5V, IC=2A 15 - 39 DC Current Gain hFE(2) VCE=5V, IC=5A 10 - - IC=2A, IB=0.4A - - 1 Collector-Emitter VCE(sat) IC=5A, IB=1A - - 2 V Saturation Voltage IC

4.19. mje13005f.pdf Size:442K _kec

SEMICONDUCTOR MJE13005F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES ·Excellent Switching Times : ton=0.8? S(Max.), at IC=2A S(Max.), tf=0.9? ·High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC DC 4 Collector Current A ICP Pulse 8 IB Base Current 2 A Collector Power Dissipation PC 30 W (Tc=25?) Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 1 mA hFE(1) (Note) VCE=5V, IC=1A 18 - 35 DC Current Gain hFE(2) VCE=5V, IC=2A 10 - - IC=1A, IB=0.2A - - 0.5 Collector-Emitter VCE(sat) IC

4.20. mje13009.pdf Size:272K _kec

SEMICONDUCTOR MJE13009 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC DC 12 Collector Current A ICP Pulse 24 IB Base Current 6 A Collector Power Dissipation PC 100 W (Tc=25 ) Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 1 mA hFE(1) (Note) VCE=5V, IC=5A 14 - 28 DC Current Gain hFE(2) VCE=5V, IC=8A 6 - - IC=5A, IB=1A - - 1 Collector-Emitter VCE(sat) IC=8A, IB=1.6A - - 1.5 V Saturation Voltage IC=12A, IB=3

4.21. mje13005df.pdf Size:375K _kec

SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A C ·Built-in Free wheeling Diode makes efficient anti saturation operation. DIM MILLIMETERS S ·Suitable for half bridge light ballast Applications. _ A 10.0 + 0.3 _ + B 15.0 0.3 E ·Low base drive requirement. C _ 2.70 0.3 + D 0.76+0.09/-0.05 MAXIMUM RATING (Ta=25?) _ E ?3.2 0.2 + _ F 3.0 0.3 + CHARACTERISTIC SYMBOL RATING UNIT _ 12.0 0.3 G + H 0.5+0.1/-0.05 VCBO Collector-Base Voltage 800 V _ + J 13.6 0.5 L L R K _ 3.7 0.2 + VCEO Collector-Emitter Voltage 400 V L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 VEBO M Emitter-Base Voltage 10 V D D _ N 2.54 0.1 + _ IC + DC 5 P 6.8 0.1 _ + Collector Current A Q 4.5 0.2 ICP _ Pulse 10 R 2.6 0.2 + N N H S 0.5 Typ IB Base Current 2 A PC 30 W Collector Power Dissipation (Tc=25?) 1. BASE 2. COLLECTOR Tj Junction Temperature 150 ? 1 2 3 3. EMITTER Tstg -55?150 ?

4.22. mje13009f.pdf Size:280K _kec

SEMICONDUCTOR MJE13009F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC DC 12 Collector Current A ICP Pulse 24 IB Base Current 6 A Collector Power Dissipation PC 50 W (Tc=25 ) Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 1 mA hFE(1) (Note) VCE=5V, IC=5A 14 - 28 DC Current Gain hFE(2) VCE=5V, IC=8A 6 - - IC=5A, IB=1A - - 1 Collector-Emitter VCE(sat) IC=8A, IB=1.6A - - 1.5 V Saturation Voltage IC=12A, IB=3

4.23. mje13003hv.pdf Size:41K _kec

SEMICONDUCTOR MJE13003HV TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A HIGH VOLTAGE AND HIGH SPEED B D C SWITCHING APPLICATION. E F FEATURES Excellent Switching Times G : ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1A H High Collector Voltage : VCBO=900V. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 _ + F 11.0 0.3 MAXIMUM RATING (Ta=25 ) G 2.9 MAX M H 1.0 MAX CHARACTERISTIC SYMBOL RATING UNIT J 1.9 MAX O _ + K 0.75 0.15 N VCBO Collector-Base Voltage 900 V P _ + L 15.50 0.5 1 2 3 _ + M 2.3 0.1 VCEO Collector-Emitter Voltage 530 V _ + N 0.65 0.15 O 1.6 1. EMITTER VEBO Emitter-Base Voltage 9 V P 3.4 MAX 2. COLLECTOR 3. BASE IC DC 1.5 Collector Current A ICP Pulse 3 TO-126 IB Base Current 0.75 A PC 20 W Collector Power Dissipation (Tc=25 ) Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TE

4.24. mje13005.pdf Size:436K _kec

SEMICONDUCTOR MJE13005 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES Excellent Switching Times : ton=0.8 S(Max.), tf=0.9 S(Max.), at IC=2A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC DC 4 Collector Current A ICP Pulse 8 IB Base Current 2 A Collector Power Dissipation PC 75 W (Tc=25 ) Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 1 mA hFE(1) (Note) VCE=5V, IC=1A 18 - 35 DC Current Gain hFE(2) VCE=5V, IC=2A 10 - - IC=1A, IB=0.2A - - 0.5 VCE(sat) IC=2A, IB=0.5A Collector-Emitter S

4.25. mje13007.pdf Size:339K _kec

SEMICONDUCTOR MJE13007 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES ·Excellent Switching Times : ton=1.6? S(Max.), at IC=5A S(Max.), tf=0.7? ·High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC DC 8 Collector Current A ICP Pulse 16 IB Base Current 4 A Collector Power Dissipation PC 80 W (Tc=25?) Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 1 mA hFE(1) (Note) VCE=5V, IC=2A 15 - 39 DC Current Gain hFE(2) VCE=5V, IC=5A 10 - - IC=2A, IB=0.4A - - 1 VCE(sat) IC=5A, IB=1A Collector-Emitter Saturation Voltage - - 2 V IC=8A,

4.26. mje13003.pdf Size:169K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE13003 Ў¤ Absolute maximum ratings (Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg IN Collector-base voltage Collector-emitter voltage PARAMETER Emitter-base voltage Collector current (DC) Collector current-Peak CHA E SEM NG Open base Open emitter Open collector OND IC CONDITIONS TOR UC VALUE 700 400 9 1.5 3 0.75 1.5 2.25 4.5 UNIT V V V A A A A A A W Base current Base current-Peak Emitter current Emitter current-Peak Ta=25Ўж Total power dissipation TC=25Ўж Junction temperature Storage tempera

4.27. mje13004.pdf Size:120K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13004 DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings (Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg IN Collector-base voltage PARAMETER Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak CHA E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 600 300 9 4 8 2 4 UNIT V V V A A A A W Open collector Base current Base current-PeaK Ta=25Ўж Total power dissipation TC=25Ўж Junction temperature Storage temperature 2 75 150 -65~150 Ўж Ўж THERMAL CHARACTERISTICS SY

4.28. mje13002.pdf Size:120K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE13002 Ў¤ Absolute maximum ratings (Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg Collector-base voltage Collector-emitter voltage PARAMETER INC Emitter-base voltage Collector current (DC) E SEM ANG H Open base Open emitter OND IC CONDITIONS TOR UC VALUE 600 300 9 1.5 3 0.75 1.5 2.25 4.5 UNIT V V V A A A A A A W Ўж Ўж Open collector Collector current-Peak Base current Base current-Peak Emitter current Emitter current-Peak Total power dissipation Junction temperature Storage temperature TC=25Ў

4.29. mje13003d.pdf Size:128K _inchange_semiconductor

INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide Area of Safe Operation APPLICATIONS ·Fluorescent lamp ·Electronic ballast ·Electronic transformer ·Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 2 A Collector Power Dissipation PC @TC=25? 40 W Junction Temperature 150 ? Tj Storage Temperature -65~150 ? Tstg INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;IBB= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 9 V Collector-Emitter Saturation Voltage IC=

4.30. mje13009.pdf Size:157K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE13009 Ў¤ Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IE IEM IB IBM PD Tj Tstg IN Collector-base voltage Collector-emitter voltage PARAMETER Emitter-base voltage Collector current (DC) Collector current-Peak CHA E SEM NG Open base Open emitter Open collector OND IC CONDITIONS TOR UC VALUE 700 400 9 12 24 18 36 6 12 UNIT V V V A A A A A A W Emitter current Emitter current-Peak Base current Base current-Peak Ta=25Ўж Total power dissipation TC=25Ўж Junction temperature Storage temperature 2

4.31. mje13009f.pdf Size:143K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE13009F DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7?s(Max.)@ IC= 8.0A APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 12 A ICM Collector Current-peak 24 A IBB Base Current 6 A IBM Base Current-Peak 12 A Collector Power Dissipation PC TC=25? 50 W Junction Temperature 150 ? Ti Storage Temperature Range -65~150 ? T

4.32. mje13005.pdf Size:154K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE13005 Ў¤ Absolute maximum ratings (Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg IN Collector-base voltage Collector-emitter voltage PARAMETER Emitter-base voltage Collector current Collector current-Peak ANG CH E SEM Open base Open emitter Open collector OND IC CONDITIONS TOR UC VALUE 700 400 9 4 8 2 4 6 12 UNIT V V V A A A A A A W Base current Base current-PeaK Emitter current Emitter current-Peak Ta=25Ўж Total power dissipation TC=25Ўж Junction temperature Storage temperature 2 75 150 -65~

4.33. mje13003b.pdf Size:178K _wietron

WEITRON MJE13003B High Voltage Fast-switching COLLECTOR 2. NPN Power Transistor P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE DESCRIPTION: 1. The device is manufactured using high voltage EMITTER TO-92 Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The MJE13003B is designed for use in compact fluorescent lamp application. FEATURE: * Medium Voltage Capability * Low Spread Of Dynamic Parameters * Minimum Lot-to-lot Spread For Reliable Operation * Very High Switching Speed APPLICATIONS: * Electronic Ballasts For Fluorescent Lighting ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Collector-Emitter Voltage (VBE = 0) VCES 700 V Collector-Emitter Voltage (IB = 0) VCEO 400 V Emitter-Base Voltage (I = 0) V 9 V C EBO Collector Current I 1 A C Collector Peak Current (t <

4.34. hmje13007.pdf Size:50K _hsmc

Spec. No. : HE200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch TO-220 • Switch Regulators • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (T =25°C) A • Maximum Temperatures Storage Temperature.............................................................................................................................................. -50 ~ +150 °C Junction Temperature........................................................................................................................................ 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (T =25°C)....................................................................................................................................... 80 W

4.35. hmje13003e.pdf Size:83K _hsmc

Spec. No. : HE200502 HI-SINCERITY Issued Date : 2005.10.01 Revised Date : 2009.10.14 MICROELECTRONICS CORP. Page No. : 1/4 HMJE13003E NPN Epitaxial Planar Transistor Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls TO-220 • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C).................................................................................................................... 35 W • Maximum Voltages and Currents (TA=25°C) VCEX Coll

4.36. hmje13003.pdf Size:140K _hsmc

Spec. No. : HT200210 HI-SINCERITY Issued Date : 2001.01.01 Revised Date : 2010.03.16 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls TO-126 • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C).................................................................................................................... 20 W • Maximum Voltages and Currents (TA=25°C) VCBO Colle

4.37. hmje13005.pdf Size:52K _hsmc

Spec. No. : HE6741 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13005 NPN EPITAXIAL PLANAR TRANSISTOR Description • Switch Regulators TO-220 • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (T =25°C) A • Maximum Temperatures Storage Temperature.............................................................................................................................................. -50 ~ +150 °C Junction Temperature........................................................................................................................................ 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (T =25°C)....................................................................................................................................... 75 W C • Maximum Voltages and Currents (T =25°

4.38. hmje13003d.pdf Size:51K _hsmc

Spec. No. : HD200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.09.04 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch TO-126ML • Switch Regulators • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (T =25°C) A • Maximum Temperatures Storage Temperature.............................................................................................................................................. -50 ~ +150 °C Junction Temperature........................................................................................................................................ 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (T =25°C)....................................................................................................................................... 40

4.39. hmje13001.pdf Size:46K _hsmc

Spec. No. : HA200213 HI-SINCERITY Issued Date : 2002.06.01 Revised Date : 2005.02.05 MICROELECTRONICS CORP. Page No. : 1/4 HMJE13001 NPN Triple Diffused Planar Type High Voltage Transistor Description The HMJE13001 is a medium power transistor designed for use in switching applications. TO-92 Features • High breakdown voltage • Low collector saturation voltage • Fast switching speed Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature .................................................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...................................................................................................................... 1 W Total Power Dissipation (T

4.40. hmje13009a.pdf Size:55K _hsmc

Spec. No. : HE200206 HI-SINCERITY Issued Date : 2002.02.01 Revised Date : 2006.07.04 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch-controls, Solenoid/Relay drivers and Deflectioncircuits. TO-220AB Specification Features • VCEO(sus)=400V • Reverse Bias SOA with Inductive Loads @TC=100°C • Inductive Switching Matrix 3 to 12 Amp., 25 and 100°C…tc@8A, 100°C is 120ns(Typ.) • 700V Blocking Capability • SOA and Switching Applications Information Absolute Maximum Ratings Characteristic Symbol Max. Unit Collector-Emitter Voltage VCEO(sus) 400 Vdc Collector-Base Voltage VCBO 700 Vdc Emitter-Base Voltage VEBO 9Vd Collector Current-Continuous IC 12 Adc Collector Current-Peak* ICM 24 Adc Base Current-Continuous IB 6Adc Base Current-Pe

4.41. hmje13007a.pdf Size:50K _hsmc

Spec. No. : HE200501 HI-SINCERITY Issued Date : 2005.06.01 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13007A NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch TO-220 • Switch Regulators • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (T =25°C) A • Maximum Temperatures Storage Temperature.............................................................................................................................................. -50 ~ +150 °C Junction Temperature........................................................................................................................................ 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (T =25°C)....................................................................................................................................... 80 W

See also transistors datasheet: MJE13004 , MJE13005 , MJE13006 , MJE13007 , MJE13007A , MJE13008 , MJE13009 , MJE13070 , 2N2219A , MJE1320 , MJE15028 , MJE15029 , MJE15030 , MJE15031 , MJE16002 , MJE16004 , MJE16106 .

Keywords

MJE13071 Datasheet	MJE13071 Datenblatt	MJE13071 RoHS	MJE13071 Distributor
MJE13071 Application Notes	MJE13071 Component	MJE13071 Circuit	MJE13071 Schematic
MJE13071 Equivalent	MJE13071 Cross Reference	MJE13071 Data Sheet	MJE13071 Fiche Technique


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