MJE15029 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJE15029

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 50

Maximum collector-base voltage |Ucb|, V: 120

Maximum collector-emitter voltage |Uce|, V: 120

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 8

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 30

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of MJE15029 transistor: TO220

MJE15029 Equivalent Transistors - Cross-Reference Search

MJE15029 PDF document for downloads:

1.1. mje15028_mje15030_mje15029_mje15031.pdf Size:79K _onsemi

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http://onsemi.com Features 8 AMPERE • DC Current Gain Specified to 4.0 Amperes POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc COMPLEMENTARY SILICON • Collector-Emitter Sustaining Voltage - 120-150 VOLTS, 50 WATTS VCEO(sus) = 120 Vdc (Min); MJE15028, MJE15029 = 150 Vdc (Min); MJE15030, MJE15031 • High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc • TO-220AB Compact Package • Pb-Free Packages are Available* MAXIMUM RATINGS TO-220AB Rating Symbol Value Unit CASE 221A-09 Collector-Emitter Voltage VCEO Vdc 1 STYLE 1 2 MJE15028, MJE15029 120 3 MJE15030, MJE15031 150 Collector-Base Voltage VCB Vdc MJE15028, MJE15029 120 MJE15030, MJE15031 150 MARKING DIAGRAM Emitter-Base Voltage VEB 5.0 Vdc Collector Current - Cont

1.2. mje15029.pdf Size:143K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type MJE15028 Ў¤ High transition frequency Ў¤ DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC =- 3.0 Adc hFE = 20 (Min) @ IC = -4.0 Adc APPLICATIONS Ў¤ Designed for use as high­frequency drivers in audio amplifiers. PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION MJE15029 Ў¤ Absolute maximum ratings (Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER IN Collector-base voltage Collector-emitter voltage Emitter-base voltage CHA E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE -120 -120 -5 -8 -16 -2 UNIT V V V A A A W Open collector Collector current (DC) Collector current-Peak Base current Ta=25Ўж Total power dissipation TC=25Ўж Junction temperature Storage temperature 2 50 150 -65~150 Ўж Ўж THERMAL C

3.1. mje15028-31.pdf Size:217K _motorola

Order this document MOTOROLA by MJE15028/D SEMICONDUCTOR TECHNICAL DATA NPN * MJE15028 Complementary Silicon Plastic MJE15030* Power Transistors PNP * MJE15029 . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc * MJE15031 hFE = 20 (Min) @ IC = 4.0 Adc *Motorola Preferred Device • Collector–Emitter Sustaining Voltage — VCEO(sus) = 120 Vdc (Min) — MJE15028, MJE15029 8 AMPERE VCEO(sus) = 150 Vdc (Min) — MJE15030, MJE15031 POWER TRANSISTORS • High Current Gain — Bandwidth Product IIIIIIIIIIIIIIIIIIIIIII COMPLEMENTARY fT = 30 MHz (Min) @ IC = 500 mAdc SILICON • TO–220AB Compact Package IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIII IIII 120–150 VOLTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIII IIII 50 WATTS MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIII IIII III IIII IIII IIII MJE15028IIII MJE15030III MJE15029IIII MJE150

3.2. mje15028.pdf Size:217K _motorola

Order this document MOTOROLA by MJE15028/D SEMICONDUCTOR TECHNICAL DATA NPN * MJE15028 Complementary Silicon Plastic MJE15030* Power Transistors PNP * MJE15029 . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc * MJE15031 hFE = 20 (Min) @ IC = 4.0 Adc *Motorola Preferred Device • Collector–Emitter Sustaining Voltage — VCEO(sus) = 120 Vdc (Min) — MJE15028, MJE15029 8 AMPERE VCEO(sus) = 150 Vdc (Min) — MJE15030, MJE15031 POWER TRANSISTORS • High Current Gain — Bandwidth Product IIIIIIIIIIIIIIIIIIIIIII COMPLEMENTARY fT = 30 MHz (Min) @ IC = 500 mAdc SILICON • TO–220AB Compact Package IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIII IIII 120–150 VOLTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIII IIII 50 WATTS MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIII IIII III IIII IIII IIII MJE15028IIII MJE15030III MJE15029IIII MJE150

3.3. mje15028.pdf Size:145K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type MJE15029 Ў¤ High transition frequency Ў¤ DC current gain specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc APPLICATIONS Ў¤ Designed for use as high­frequency drivers in audio amplifiers. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE15028 Ў¤ Absolute maximum ratings (Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PD PARAMETER IN Collector-base voltage Collector-emitter voltage Emitter-base voltage CHA E SEM NG Open emitter OND IC CONDITIONS TOR UC VALUE 120 120 5 8 16 2 UNIT V V V A A A W Open base Open collector Collector current (DC) Collector current-Peak Base current Ta=25Ўж Total power dissipation TC=25Ўж 2 50 150 -65~150 Ўж Ўж Tj Tstg Junction temperature Storage temperature THERMAL CHARACT

See also transistors datasheet: MJE13007 , MJE13007A , MJE13008 , MJE13009 , MJE13070 , MJE13071 , MJE1320 , MJE15028 , TIP142 , MJE15030 , MJE15031 , MJE16002 , MJE16004 , MJE16106 , MJE16204 , MJE1660 , MJE1661 .

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