MJE171 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJE171

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 12

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 3

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 60

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of MJE171 transistor: TO126

MJE171 Equivalent Transistors - Cross-Reference Search

MJE171 PDF document for downloads:

1.1. mje171re.pdf Size:172K _motorola

Order this document MOTOROLA by MJE171/D SEMICONDUCTOR TECHNICAL DATA PNP Complementary Plastic * MJE171 Silicon Power Transistors * MJE172 . . . designed for low power audio amplifier and low current, high speed switching applications. NPN • Collector–Emitter Sustaining Voltage — * MJE181 VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182 * MJE182 • DC Current Gain — hFE = 30 (Min) @ IC = 0.5 Adc *Motorola Preferred Device hFE = 12 (Min) @ IC = 1.5 Adc • Current–Gain — Bandwidth Product — 3 AMPERE fT = 50 MHz (Min) @ IC = 100 mAdc POWER TRANSISTORS • Annular Construction for Low Leakages — IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III COMPLEMENTARY ICBO = 100 nA (Max) @ Rated VIIII IIII CB SILICON IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIII IIII 60–80 VOLTS MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIIIIIIIIIII IIII III IIII IIII IIII IIII 12.5 WATTS MJE171 MJE172 IIIIIIIIIIII IIII III IIIII

1.2. mje170_mje171_mje172.pdf Size:49K _fairchild_semi

MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : MJE170 - 60 V : MJE171 - 80 V : MJE172 - 100 V VCEO Collector-Emitter Voltage : MJE170 - 40 V : MJE171 - 60 V : MJE172 - 80 V VEBO Emitter-Base Voltage - 7 V IC Collector Current (DC) - 3 A ICP Collector Current (Pulse) - 6 A IB Base Current - 1 A PC Collector Dissipation (TC=25°C) 12.5 W Collector Dissipation (Ta=25°C) 1.5 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breaksown Voltage : MJE170 IC = 10mA, IB = 0 -40 V : MJE171 -60 V : MJE172 -80 V ICBO Collector Cut-off Current : MJE170 VCB = - 60V, IB = 0 -0.1 µA : MJE171 VCB =

1.3. mje170_mje171_mje172_mje180_mje181_mje182.pdf Size:82K _onsemi

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors http://onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS • Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - MJE170, MJE180 = 60 Vdc - MJE171, MJE181 40 - 60 - 80 VOLTS = 80 Vdc - MJE172, MJE182 12.5 WATTS • DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc = 12 (Min) @ IC = 1.5 Adc • Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc • Annular Construction for Low Leakages - TO-225AA ICBO = 100 nA (Max) @ Rated VCB CASE 77-09 • Epoxy Meets UL 94 V-0 @ 0.125 in STYLE 1 3 • ESD Ratings: Machine Model, C 2 1 Human Body Model, 3B • Pb-Free Packages are Available* MARKING DIAGRAM MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIII Rating SymbolIIII Unit Value IIIIIIIIIIIIIIIIIIII

1.4. mje171.pdf Size:139K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJE171 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -60V ·DC Current Gain— : hFE = 30(Min) @ IC= -0.5 A = 12(Min) @ IC= -1.5 A ·Complement to Type MJE181 APPLICATIONS ·Low power audio amplifier applications. ·Low current high speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-peak -6 A IBB Base Current -1 A Collector Power Dissipation 1.5 Ta=25? PC W Collector Power Dissipation 12.5 TC=25? Junction Temperature 150 ? Ti Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 10 ?/W Rth j-c Thermal Resistance,Junction to Ambient 83.4 ?/W Rth j

See also transistors datasheet: MJE15031 , MJE16002 , MJE16004 , MJE16106 , MJE16204 , MJE1660 , MJE1661 , MJE170 , 2N5133 , MJE172 , MJE180 , MJE18002 , MJE18004 , MJE18006 , MJE18008 , MJE181 , MJE182 .

Keywords