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MJE3055
  MJE3055
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MJE3055
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100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTB989
KTC1001 .. KTN2222AE
KTN2222AS .. MCH4009
MCH4013 .. MJ11012
MJ11013 .. MJD47T4
MJD47TF .. MJE6044
MJE6045 .. MMBC1321Q4
MMBC1321Q5 .. MMBT6520L
MMBT6521L .. MP14B
MP14I .. MP5137
MP5138 .. MPS3397
MPS3398 .. MPSH54
MPSH55 .. MRF9511LT1
MRF957T1 .. NA12HG
NA12HH .. NB014EK
NB014EL .. NB212YH
NB212YI .. NKT13429
NKT135 .. NPS5449
NPS5550 .. NTE22
NTE226 .. OC822
OC823 .. PBSS5320T
PBSS5320X .. PMBT2369
PMBT2907 .. PRF949
PRF957 .. RCA1A16
RCA1A17 .. RN16J1
RN1701 .. RN2901AFS
RN2901FE .. S1770
S1784 .. SDT9303
SDT9304 .. SJ5436
SJ5437 .. SRA2219EF
SRA2219M .. STC5554
STC5555 .. SZD31CNPN
SZD31CPNP .. TA2511
TA2512 .. TIP145
TIP145F .. TIS45
TIS47 .. TN4122
TN4123 .. TP930A
TP930R .. UN1110S
UN1111 .. UN921BJ
UN921CJ .. ZT404P
ZT41 .. ZTX4403K
ZTX4403L .. ZXTP558L
ZXTP717MA .. ZXTPS720MC
 
MJE3055 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

MJE3055 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJE3055

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 90

Maximum collector-base voltage |Ucb|, V: 70

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 10

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of MJE3055 transistor: TO126

MJE3055 Equivalent Transistors - Cross-Reference Search

MJE3055 PDF doc:

1.1. mje3055t_mje2955t.pdf Size:129K _motorola

MJE3055
MJE3055
Order this document MOTOROLA by MJE2955T/D SEMICONDUCTOR TECHNICAL DATA PNP * MJE2955T Complementary Silicon Plastic NPN * MJE3055T Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product — 10 AMPERE IIIIIIIIIIIIIIIIIIIIIII fT = 2.0 MHz (Min) @ IC = 500 mAdc COMPLEMENTARY IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIII III SILICON IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIII III IIIII III POWER TRANSISTORS MAXIMUM RATINGS 60 VOLTS Rating IIIII Value Unit IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII Symbol IIIIII IIIII III IIIII III III 75 WATTS Collector–Emitter Voltage IIIII 60 III Vdc IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII VCEO IIIIII IIIII III IIIII III IIIII III Collector–Base Voltage IIIII 70 I

1.2. mje2955t_mje3055t.pdf Size:59K _st

MJE3055
MJE3055
MJE2955T MJE3055T ® COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary 3 2 PNP type is MJE2955T. 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN MJE3055T PNP MJE2955T VCEO Collector-Emitter Voltage (IB = 0) 60 V VCBO Collector-Base Voltage (IE = 0) 70 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 10 A I Base Current 6 A B Ptot Total Power Dissipation at Tcase ? 25 oC 75 W o Tstg Storage Temperature -55 to 150 C o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/4 September 2003 MJE2955T / MJE3055T THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 1.66 C/W ELECTRICAL CHARAC

1.3. mje3055t.pdf Size:36K _fairchild_semi

MJE3055
MJE3055
MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.) TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector -Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current 10 A IB Base Current 6 A PC Collector Dissipation (TC=25°C) 75 W PC Collector Dissipation (Ta=25°C) 0.6 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 200mA, IB = 0 60 V ICEO Collector Cut-off Current VCE = 30V, IB = 0 700 µA ICEX1 Collector Cut-off Current VCE = 70V, VBE(off) = -1.5V 1 mA ICEX2 VCE = 70V, VBE(off) = -1.5V 5 mA @ TC = 150°C IEBO Emitter Cut-off Curr

1.4. mje2955t_mje3055t.pdf Size:138K _onsemi

MJE3055
MJE3055
MJE2955T (PNP) MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. http://onsemi.com Features 10 AMPERE • DC Current Gain Specified to 10 A COMPLEMENTARY SILICON • High Current Gain - Bandwidth Product - POWER TRANSISTORS fT = 2.0 MHz (Min) @ IC 60 VOLTS - 75 WATTS = 500 mAdc • Pb-Free Packages are Available* MAXIMUM RATINGS TO-220AB Rating Symbol Value Unit CASE 221A-09 STYLE 1 Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCB 70 Vdc Emitter-Base Voltage VEB 5.0 Vdc 1 2 3 Collector Current IC 10 Adc Base Current IB 6.0 Adc Total Device Dissipation @ TC = 25°C PD 75 W MARKING DIAGRAM Derate above 25°C (Note 1) 0.6 W/°C Operating and Storage Junction TJ, Tstg -55 to +150 °C Temperature Range THERMAL CHARACTERISTICS MJExx55TG Characteristics Symbol Max Unit AY WW Thermal Resistance, Junction-to-Case qJC 1.67 °C/W Stresses exceeding

1.5. mje3055t.pdf Size:114K _utc

MJE3055
MJE3055
UNISONIC TECHNOLOGIES CO., LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications. Lead-free: MJE3055TL Halogen-free: MJE3055TG ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Free 1 2 3 MJE3055T-TA3-T MJE3055TL-TA3-T MJE3055TG-TA3-T TO-220 B C E Tube MJE3055T-TM3-T MJE3055TL-TM3-T MJE3055TG-TM3-T TO-251 B C E Tube MJE3055T-TN3-R MJE3055TL-TN3-R MJE3055TG-TN3-R TO-252 B C E Tape Reel www.unisonic.com.tw 1 of 2 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R203-011.C MJE3055T NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V 70 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5 V EBO TO-220 75 W Total Power Dissipation P D TO-251/TO-252 20 W Collector Current I 10 A

1.6. mje2955t_mje3055t.pdf Size:273K _cdil

MJE3055
MJE3055
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS MJE2955T PNP MJE3055T NPN TO-220 Plastic Package With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 60 V Collector Base Voltage VCBO 70 V Emitter Base Voltage VEBO 5.0 V IC Collector Current Continuous 10 A Base Current IB 6.0 A Power Dissipation upto Tc=25?C PD 75 W Derate above 25?C 0.6 W/?C Power Dissipation upto Ta=25?C PD 2.0 W Derate above 25?C 16 mW/?C Junction Temperature Tj 150 ?C Tstg Storage Temperature - 55 to +150 ?C THERMAL RESISTANCE Rth (j-c) Junction to Case 1.67 ?C/W Rth (j-a) Junction to Ambient in free air 62.5 ?C/W ELECTRICAL CHARACTERISTICS (Tc=25?C unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Collector Emitter (sus) Voltage *VCEO(sus) IC=200mA, IB=0 60

1.7. mje3055t.pdf Size:137K _inchange_semiconductor

MJE3055
MJE3055
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055T DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Complement to Type MJE2955T APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IBB Base Current-Continuous 6 A Collector Power Dissipation PC @ TC=25? 75 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.67 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055T ELECTRICAL CHARACTERISTICS TC=25? unless other

1.8. mje3055.pdf Size:226K _inchange_semiconductor

MJE3055
MJE3055
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Complement to Type MJE2955 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IBB Base Current-Continuous 6 A Collector Power Dissipation PC @ TC=25? 90 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.39 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055 ELECTRICAL CHARACTERISTICS TC=25?

1.9. mje3055.pdf Size:223K _lge

MJE3055
MJE3055
MJE3055(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 3 2 1 Features GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 10 A PC Collector Power Dissipation 2 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 70 V Collector-emitter breakdown voltage V(BR)CEO IC=200mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V Collector cut-off current ICBO VCB=70V, IE=0 1 mA Emitter cut-off current IEBO VEB=5V, IC=0 5 mA hFE(1) * VCE=4V, IC=4A 20 100 DC current gain hFE(2) * VCE=4V,

1.10. mje3055.pdf Size:128K _wietron

MJE3055
MJE3055
MJE3055 Plastic-Encapsulate Power Transistors 1 2 3 1. BASE 2. COLLECTOR TO-220 3. EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Value Rating Symbol Unit Collector-Emitter Voltage V 60 CEO Vdc Collector-Base Voltage VCBO 70 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current (DC) IC(DC) 10 Adc Total Device Disspation T =25 C C 75 W PD Derate above 25 C 0.6 W/ C -55 to +150 C Operating and Storage Junction Temperature Range Tj , Tstg ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= 200 mAdc, IB=0) V(BR)CEO 60 Vdc - Collector-Base Breakdown Voltage (IC= 1.0 mAdc, IE=0) V(BR)CBO 70 Vdc V(BR)EBO 5.0 - Vdc Emitter-Base Breakdown Voltage (IE= 1.0 mAdc, IC=0) ICBO - 1.0 nAdc Collector Cutoff Current (V = 70 Vdc, IE=0) CB IEBO Emitter Cutoff Current (VEB= 5.0Vdc, I =0) - 5.0 nAdc C WEITRON http://www.weitron.com.tw MJE3055 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Coun

1.11. hmje3055t.pdf Size:41K _hsmc

MJE3055
MJE3055
Spec. No. : HE6737 HI-SINCERITY Issued Date : 1993.09.24 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/4 HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE3055T is designed for general purpose of amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25°C) • Maximum Temperature Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 75 W Total Power Dissipation (TA=25°C) ................................................................................................................... 0

See also transistors datasheet: MJE2955 , MJE2955K , MJE2955T , MJE29A , MJE29B , MJE29C , MJE30 , MJE3054 , 9015 , MJE3055K , MJE3055T , MJE30A , MJE30B , MJE30C , MJE31 , MJE31A , MJE31B .

Keywords

 MJE3055 Datasheet  MJE3055 Datenblatt  MJE3055 RoHS  MJE3055 Distributor
 MJE3055 Application Notes  MJE3055 Component  MJE3055 Circuit  MJE3055 Schematic
 MJE3055 Equivalent  MJE3055 Cross Reference  MJE3055 Data Sheet  MJE3055 Fiche Technique

 

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