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MJE3055
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MJE3055
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MJE3055
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2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
MJE3055 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

MJE3055 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJE3055

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 90

Maximum collector-base voltage |Ucb|, V: 70

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 10

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of MJE3055 transistor: TO126

MJE3055 Equivalent Transistors - Cross-Reference Search

MJE3055 PDF doc:

1.1. mje3055t_mje2955t.pdf Size:129K _motorola

MJE3055
MJE3055
Order this document MOTOROLA by MJE2955T/D SEMICONDUCTOR TECHNICAL DATA PNP * MJE2955T Complementary Silicon Plastic NPN * MJE3055T Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product — 10 AMPERE IIIIIIIIIIIIIIIIIIIIIII fT = 2.0 MHz (Min) @ IC = 500 mAdc COMPLEMENTARY IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIII III SILICON IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIII III IIIII III POWER TRANSISTORS MAXIMUM RATINGS 60 VOLTS Rating IIIII Value Unit IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII Symbol IIIIII IIIII III IIIII III III 75 WATTS Collector–Emitter Voltage IIIII 60 III Vdc IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII VCEO IIIIII IIIII III IIIII III IIIII III Collector–Base Voltage IIIII 70 I

1.2. mje2955t_mje3055t.pdf Size:59K _st

MJE3055
MJE3055
MJE2955T MJE3055T ® COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary 3 2 PNP type is MJE2955T. 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN MJE3055T PNP MJE2955T VCEO Collector-Emitter Voltage (IB = 0) 60 V VCBO Collector-Base Voltage (IE = 0) 70 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 10 A I Base Current 6 A B Ptot Total Power Dissipation at Tcase ? 25 oC 75 W o Tstg Storage Temperature -55 to 150 C o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/4 September 2003 MJE2955T / MJE3055T THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 1.66 C/W ELECTRICAL CHARAC

1.3. mje3055t.pdf Size:36K _fairchild_semi

MJE3055
MJE3055
MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.) TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector -Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current 10 A IB Base Current 6 A PC Collector Dissipation (TC=25°C) 75 W PC Collector Dissipation (Ta=25°C) 0.6 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 200mA, IB = 0 60 V ICEO Collector Cut-off Current VCE = 30V, IB = 0 700 µA ICEX1 Collector Cut-off Current VCE = 70V, VBE(off) = -1.5V 1 mA ICEX2 VCE = 70V, VBE(off) = -1.5V 5 mA @ TC = 150°C IEBO Emitter Cut-off Curr

1.4. mje2955t_mje3055t.pdf Size:138K _onsemi

MJE3055
MJE3055
MJE2955T (PNP) MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. http://onsemi.com Features 10 AMPERE • DC Current Gain Specified to 10 A COMPLEMENTARY SILICON • High Current Gain - Bandwidth Product - POWER TRANSISTORS fT = 2.0 MHz (Min) @ IC 60 VOLTS - 75 WATTS = 500 mAdc • Pb-Free Packages are Available* MAXIMUM RATINGS TO-220AB Rating Symbol Value Unit CASE 221A-09 STYLE 1 Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCB 70 Vdc Emitter-Base Voltage VEB 5.0 Vdc 1 2 3 Collector Current IC 10 Adc Base Current IB 6.0 Adc Total Device Dissipation @ TC = 25°C PD 75 W MARKING DIAGRAM Derate above 25°C (Note 1) 0.6 W/°C Operating and Storage Junction TJ, Tstg -55 to +150 °C Temperature Range THERMAL CHARACTERISTICS MJExx55TG Characteristics Symbol Max Unit AY WW Thermal Resistance, Junction-to-Case qJC 1.67 °C/W Stresses exceeding

1.5. mje3055t.pdf Size:10K _utc

MJE3055
MJE3055
UTC MJE3055T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 70 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 5 V Total Power Dissipation(Ta=25°C) Pc 75 W Collector current Ic 10 A Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C Base Current IB 6 A ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-emitter breakdown voltage BVCEO Ic=200mA 60 V Collector-Base Breakdown Voltage VBCBO Ic=10mA 70 V Emitter-Base Breakdown Voltage BVEBO IE=10mA 5 V Collector cut-off current ICBO VCB=70V 1 mA ICEO VCE=30V 700 µA ICEX VCE=70V,VEB(off)=1.5V 1 mA Emitter cut-off cu

1.6. mje2955t_mje3055t.pdf Size:273K _cdil

MJE3055
MJE3055
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS MJE2955T PNP MJE3055T NPN TO-220 Plastic Package With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 60 V Collector Base Voltage VCBO 70 V Emitter Base Voltage VEBO 5.0 V IC Collector Current Continuous 10 A Base Current IB 6.0 A Power Dissipation upto Tc=25?C PD 75 W Derate above 25?C 0.6 W/?C Power Dissipation upto Ta=25?C PD 2.0 W Derate above 25?C 16 mW/?C Junction Temperature Tj 150 ?C Tstg Storage Temperature - 55 to +150 ?C THERMAL RESISTANCE Rth (j-c) Junction to Case 1.67 ?C/W Rth (j-a) Junction to Ambient in free air 62.5 ?C/W ELECTRICAL CHARACTERISTICS (Tc=25?C unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Collector Emitter (sus) Voltage *VCEO(sus) IC=200mA, IB=0 60

1.7. mje3055t.pdf Size:137K _inchange_semiconductor

MJE3055
MJE3055
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055T DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Complement to Type MJE2955T APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IBB Base Current-Continuous 6 A Collector Power Dissipation PC @ TC=25? 75 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.67 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055T ELECTRICAL CHARACTERISTICS TC=25? unless other

1.8. mje3055.pdf Size:226K _inchange_semiconductor

MJE3055
MJE3055
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Complement to Type MJE2955 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IBB Base Current-Continuous 6 A Collector Power Dissipation PC @ TC=25? 90 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.39 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055 ELECTRICAL CHARACTERISTICS TC=25?

1.9. mje3055.pdf Size:223K _lge

MJE3055
MJE3055
MJE3055(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 3 2 1 Features GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 10 A PC Collector Power Dissipation 2 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 70 V Collector-emitter breakdown voltage V(BR)CEO IC=200mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V Collector cut-off current ICBO VCB=70V, IE=0 1 mA Emitter cut-off current IEBO VEB=5V, IC=0 5 mA hFE(1) * VCE=4V, IC=4A 20 100 DC current gain hFE(2) * VCE=4V,

1.10. mje3055.pdf Size:128K _wietron

MJE3055
MJE3055
MJE3055 Plastic-Encapsulate Power Transistors 1 2 3 1. BASE 2. COLLECTOR TO-220 3. EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Value Rating Symbol Unit Collector-Emitter Voltage V 60 CEO Vdc Collector-Base Voltage VCBO 70 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current (DC) IC(DC) 10 Adc Total Device Disspation T =25 C C 75 W PD Derate above 25 C 0.6 W/ C -55 to +150 C Operating and Storage Junction Temperature Range Tj , Tstg ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= 200 mAdc, IB=0) V(BR)CEO 60 Vdc - Collector-Base Breakdown Voltage (IC= 1.0 mAdc, IE=0) V(BR)CBO 70 Vdc V(BR)EBO 5.0 - Vdc Emitter-Base Breakdown Voltage (IE= 1.0 mAdc, IC=0) ICBO - 1.0 nAdc Collector Cutoff Current (V = 70 Vdc, IE=0) CB IEBO Emitter Cutoff Current (VEB= 5.0Vdc, I =0) - 5.0 nAdc C WEITRON http://www.weitron.com.tw MJE3055 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Coun

1.11. hmje3055t.pdf Size:41K _hsmc

MJE3055
MJE3055
Spec. No. : HE6737 HI-SINCERITY Issued Date : 1993.09.24 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/4 HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE3055T is designed for general purpose of amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25°C) • Maximum Temperature Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 75 W Total Power Dissipation (TA=25°C) ................................................................................................................... 0

See also transistors datasheet: MJE2955 , MJE2955K , MJE2955T , MJE29A , MJE29B , MJE29C , MJE30 , MJE3054 , 9015 , MJE3055K , MJE3055T , MJE30A , MJE30B , MJE30C , MJE31 , MJE31A , MJE31B .

Keywords

 MJE3055 Datasheet  MJE3055 Datenblatt  MJE3055 RoHS  MJE3055 Distributor
 MJE3055 Application Notes  MJE3055 Component  MJE3055 Circuit  MJE3055 Schematic
 MJE3055 Equivalent  MJE3055 Cross Reference  MJE3055 Data Sheet  MJE3055 Fiche Technique

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