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MJE3055 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJE3055

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 90

Maximum collector-base voltage |Ucb|, V: 70

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 10

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of MJE3055 transistor: TO126

MJE3055 Equivalent Transistors - Cross-Reference Search

MJE3055 PDF doc:

1.1. mje3055t_mje2955t.pdf Size:129K _motorola

Order this document MOTOROLA by MJE2955T/D SEMICONDUCTOR TECHNICAL DATA PNP * MJE2955T Complementary Silicon Plastic NPN * MJE3055T Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product — 10 AMPERE IIIIIIIIIIIIIIIIIIIIIII fT = 2.0 MHz (Min) @ IC = 500 mAdc COMPLEMENTARY IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIII III SILICON IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIII III IIIII III POWER TRANSISTORS MAXIMUM RATINGS 60 VOLTS Rating IIIII Value Unit IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII Symbol IIIIII IIIII III IIIII III III 75 WATTS Collector–Emitter Voltage IIIII 60 III Vdc IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII VCEO IIIIII IIIII III IIIII III IIIII III Collector–Base Voltage IIIII 70 I

1.2. mje2955t_mje3055t.pdf Size:59K _st

MJE2955T MJE3055T ® COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary 3 2 PNP type is MJE2955T. 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN MJE3055T PNP MJE2955T VCEO Collector-Emitter Voltage (IB = 0) 60 V VCBO Collector-Base Voltage (IE = 0) 70 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 10 A I Base Current 6 A B Ptot Total Power Dissipation at Tcase ? 25 oC 75 W o Tstg Storage Temperature -55 to 150 C o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/4 September 2003 MJE2955T / MJE3055T THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 1.66 C/W ELECTRICAL CHARAC

1.3. mje3055t.pdf Size:36K _fairchild_semi

MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.) TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector -Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current 10 A IB Base Current 6 A PC Collector Dissipation (TC=25°C) 75 W PC Collector Dissipation (Ta=25°C) 0.6 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 200mA, IB = 0 60 V ICEO Collector Cut-off Current VCE = 30V, IB = 0 700 µA ICEX1 Collector Cut-off Current VCE = 70V, VBE(off) = -1.5V 1 mA ICEX2 VCE = 70V, VBE(off) = -1.5V 5 mA @ TC = 150°C IEBO Emitter Cut-off Curr

1.4. mje2955t_mje3055t.pdf Size:138K _onsemi

MJE2955T (PNP) MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. http://onsemi.com Features 10 AMPERE • DC Current Gain Specified to 10 A COMPLEMENTARY SILICON • High Current Gain - Bandwidth Product - POWER TRANSISTORS fT = 2.0 MHz (Min) @ IC 60 VOLTS - 75 WATTS = 500 mAdc • Pb-Free Packages are Available* MAXIMUM RATINGS TO-220AB Rating Symbol Value Unit CASE 221A-09 STYLE 1 Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCB 70 Vdc Emitter-Base Voltage VEB 5.0 Vdc 1 2 3 Collector Current IC 10 Adc Base Current IB 6.0 Adc Total Device Dissipation @ TC = 25°C PD 75 W MARKING DIAGRAM Derate above 25°C (Note 1) 0.6 W/°C Operating and Storage Junction TJ, Tstg -55 to +150 °C Temperature Range THERMAL CHARACTERISTICS MJExx55TG Characteristics Symbol Max Unit AY WW Thermal Resistance, Junction-to-Case qJC 1.67 °C/W Stresses exceeding

1.5. mje3055t.pdf Size:10K _utc

UTC MJE3055T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 70 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 5 V Total Power Dissipation(Ta=25°C) Pc 75 W Collector current Ic 10 A Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C Base Current IB 6 A ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-emitter breakdown voltage BVCEO Ic=200mA 60 V Collector-Base Breakdown Voltage VBCBO Ic=10mA 70 V Emitter-Base Breakdown Voltage BVEBO IE=10mA 5 V Collector cut-off current ICBO VCB=70V 1 mA ICEO VCE=30V 700 µA ICEX VCE=70V,VEB(off)=1.5V 1 mA Emitter cut-off cu

1.6. mje3055.pdf Size:226K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Complement to Type MJE2955 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IBB Base Current-Continuous 6 A Collector Power Dissipation PC @ TC=25? 90 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.39 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055 ELECTRICAL CHARACTERISTICS TC=25?

1.7. mje3055t.pdf Size:137K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055T DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Complement to Type MJE2955T APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IBB Base Current-Continuous 6 A Collector Power Dissipation PC @ TC=25? 75 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.67 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055T ELECTRICAL CHARACTERISTICS TC=25? unless other

1.8. mje3055.pdf Size:223K _lge

MJE3055(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 3 2 1 Features GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 10 A PC Collector Power Dissipation 2 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 70 V Collector-emitter breakdown voltage V(BR)CEO IC=200mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V Collector cut-off current ICBO VCB=70V, IE=0 1 mA Emitter cut-off current IEBO VEB=5V, IC=0 5 mA hFE(1) * VCE=4V, IC=4A 20 100 DC current gain hFE(2) * VCE=4V,

1.9. mje3055.pdf Size:128K _wietron

MJE3055 Plastic-Encapsulate Power Transistors 1 2 3 1. BASE 2. COLLECTOR TO-220 3. EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Value Rating Symbol Unit Collector-Emitter Voltage V 60 CEO Vdc Collector-Base Voltage VCBO 70 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current (DC) IC(DC) 10 Adc Total Device Disspation T =25 C C 75 W PD Derate above 25 C 0.6 W/ C -55 to +150 C Operating and Storage Junction Temperature Range Tj , Tstg ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= 200 mAdc, IB=0) V(BR)CEO 60 Vdc - Collector-Base Breakdown Voltage (IC= 1.0 mAdc, IE=0) V(BR)CBO 70 Vdc V(BR)EBO 5.0 - Vdc Emitter-Base Breakdown Voltage (IE= 1.0 mAdc, IC=0) ICBO - 1.0 nAdc Collector Cutoff Current (V = 70 Vdc, IE=0) CB IEBO Emitter Cutoff Current (VEB= 5.0Vdc, I =0) - 5.0 nAdc C WEITRON http://www.weitron.com.tw MJE3055 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Coun

1.10. hmje3055t.pdf Size:41K _hsmc

Spec. No. : HE6737 HI-SINCERITY Issued Date : 1993.09.24 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/4 HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE3055T is designed for general purpose of amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25°C) • Maximum Temperature Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 75 W Total Power Dissipation (TA=25°C) ................................................................................................................... 0

See also transistors datasheet: MJE2955 , MJE2955K , MJE2955T , MJE29A , MJE29B , MJE29C , MJE30 , MJE3054 , AC127 , MJE3055K , MJE3055T , MJE30A , MJE30B , MJE30C , MJE31 , MJE31A , MJE31B .

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