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MJE3055
  MJE3055
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MJE3055
  MJE3055
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MJE3055
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100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU826A
BU902 .. BUP23CF
BUP30 .. BUV90A
BUV90F .. BUY13
BUY13S .. CC338-40
CC5401 .. CFD1408
CFD1499 .. CK22C
CK25 .. CP100
CP1016 .. CSA1220O
CSA1220R .. CSC1674
CSC1674O .. CSD600K
CSD600KD .. D16P2
D16P3 .. D40DU4
D40DU5 .. D45VM2
D45VM3 .. DP350T05
DP500 .. DTA143T
DTA143TCA .. DTC314TV
DTC343TA .. ECG12
ECG123 .. ECG473
ECG474 .. ESM283
ESM2894 .. FCS9015C
FCS9016 .. FJX945
FJX945 .. FMMT597
FMMT6076 .. FV3502
FV3503 .. GC512K
GC515 .. GES5400R
GES5401 .. GMO656A
GP140 .. GT330G
GT330I .. HBDM60V600W
HBF422 .. HPT1012
HPT1210 .. IDD1407
IDD1408 .. JE9092
JE9092A .. KN4L3Z
KN4L4K .. KRA760E
KRA760F .. KRC831F
KRC831U .. KSB1017-O
KSB1017-R .. KSC2785-G
KSC2785-L .. KSD5041-P
KSD5041-Q .. KST56
KST63 .. KT3189V-9
KT3189V9 .. KT6128E
KT6128G .. KT8145A
KT8145B .. KT888A
KT888B .. KTB1151
KTB1234T .. KTD1937
KTD2058 .. MBT3904DW
MBT3904DW1 .. MJ10014
MJ10015 .. MJD32C
MJD32C-1 .. MJE5656
MJE5657 .. MM8002
MM8003 .. MMBT5551R
MMBT5551W .. MP10A
MP10B .. MP4965
MP500 .. MPS2906
MPS2906A .. MPSD02
MPSD03 .. MRF835
MRF840 .. NA11FH
NA11FI .. NB013EU
NB013EV .. NB212EI
NB212EJ .. NKT106
NKT107 .. NPS5131
NPS5132 .. NTE126A
NTE127 .. OC78D
OC78N .. PBSS4620PA
PBSS4630PA .. PH5416
PHD13003C .. PN706
PN706A .. RCA1001
RCA120 .. RN1507
RN1508 .. RN2705
RN2705JE .. S1381
S1382 .. SDM5011
SDM5012 .. SGSIF341
SGSIF343 .. SRA2211
SRA2211E .. STC4250F
STC4250L .. SYL1986
SYL2245 .. TA2333
TA2359A .. TIP127F
TIP127FP .. TIPP32A
TIPP32B .. TN3904
TN3904R .. TP708
TP750 .. UMX18N
UMX1N .. UN9214
UN9215Q .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
MJE3055 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

MJE3055 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJE3055

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 90

Maximum collector-base voltage |Ucb|, V: 70

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 10

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of MJE3055 transistor: TO126

MJE3055 Equivalent Transistors - Cross-Reference Search

MJE3055 PDF doc:

1.1. mje3055t_mje2955t.pdf Size:129K _motorola

MJE3055
MJE3055
Order this document MOTOROLA by MJE2955T/D SEMICONDUCTOR TECHNICAL DATA PNP * MJE2955T Complementary Silicon Plastic NPN * MJE3055T Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product — 10 AMPERE IIIIIIIIIIIIIIIIIIIIIII fT = 2.0 MHz (Min) @ IC = 500 mAdc COMPLEMENTARY IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIII III SILICON IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIII III IIIII III POWER TRANSISTORS MAXIMUM RATINGS 60 VOLTS Rating IIIII Value Unit IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII Symbol IIIIII IIIII III IIIII III III 75 WATTS Collector–Emitter Voltage IIIII 60 III Vdc IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII VCEO IIIIII IIIII III IIIII III IIIII III Collector–Base Voltage IIIII 70 I

1.2. mje2955t_mje3055t.pdf Size:59K _st

MJE3055
MJE3055
MJE2955T MJE3055T ® COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary 3 2 PNP type is MJE2955T. 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN MJE3055T PNP MJE2955T VCEO Collector-Emitter Voltage (IB = 0) 60 V VCBO Collector-Base Voltage (IE = 0) 70 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 10 A I Base Current 6 A B Ptot Total Power Dissipation at Tcase ? 25 oC 75 W o Tstg Storage Temperature -55 to 150 C o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/4 September 2003 MJE2955T / MJE3055T THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 1.66 C/W ELECTRICAL CHARAC

1.3. mje3055t.pdf Size:36K _fairchild_semi

MJE3055
MJE3055
MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.) TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector -Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current 10 A IB Base Current 6 A PC Collector Dissipation (TC=25°C) 75 W PC Collector Dissipation (Ta=25°C) 0.6 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 200mA, IB = 0 60 V ICEO Collector Cut-off Current VCE = 30V, IB = 0 700 µA ICEX1 Collector Cut-off Current VCE = 70V, VBE(off) = -1.5V 1 mA ICEX2 VCE = 70V, VBE(off) = -1.5V 5 mA @ TC = 150°C IEBO Emitter Cut-off Curr

1.4. mje2955t_mje3055t.pdf Size:138K _onsemi

MJE3055
MJE3055
MJE2955T (PNP) MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. http://onsemi.com Features 10 AMPERE • DC Current Gain Specified to 10 A COMPLEMENTARY SILICON • High Current Gain - Bandwidth Product - POWER TRANSISTORS fT = 2.0 MHz (Min) @ IC 60 VOLTS - 75 WATTS = 500 mAdc • Pb-Free Packages are Available* MAXIMUM RATINGS TO-220AB Rating Symbol Value Unit CASE 221A-09 STYLE 1 Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCB 70 Vdc Emitter-Base Voltage VEB 5.0 Vdc 1 2 3 Collector Current IC 10 Adc Base Current IB 6.0 Adc Total Device Dissipation @ TC = 25°C PD 75 W MARKING DIAGRAM Derate above 25°C (Note 1) 0.6 W/°C Operating and Storage Junction TJ, Tstg -55 to +150 °C Temperature Range THERMAL CHARACTERISTICS MJExx55TG Characteristics Symbol Max Unit AY WW Thermal Resistance, Junction-to-Case qJC 1.67 °C/W Stresses exceeding

1.5. mje3055t.pdf Size:114K _utc

MJE3055
MJE3055
UNISONIC TECHNOLOGIES CO., LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications. Lead-free: MJE3055TL Halogen-free: MJE3055TG ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Free 1 2 3 MJE3055T-TA3-T MJE3055TL-TA3-T MJE3055TG-TA3-T TO-220 B C E Tube MJE3055T-TM3-T MJE3055TL-TM3-T MJE3055TG-TM3-T TO-251 B C E Tube MJE3055T-TN3-R MJE3055TL-TN3-R MJE3055TG-TN3-R TO-252 B C E Tape Reel www.unisonic.com.tw 1 of 2 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R203-011.C MJE3055T NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V 70 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5 V EBO TO-220 75 W Total Power Dissipation P D TO-251/TO-252 20 W Collector Current I 10 A

1.6. mje2955t_mje3055t.pdf Size:273K _cdil

MJE3055
MJE3055
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS MJE2955T PNP MJE3055T NPN TO-220 Plastic Package With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 60 V Collector Base Voltage VCBO 70 V Emitter Base Voltage VEBO 5.0 V IC Collector Current Continuous 10 A Base Current IB 6.0 A Power Dissipation upto Tc=25?C PD 75 W Derate above 25?C 0.6 W/?C Power Dissipation upto Ta=25?C PD 2.0 W Derate above 25?C 16 mW/?C Junction Temperature Tj 150 ?C Tstg Storage Temperature - 55 to +150 ?C THERMAL RESISTANCE Rth (j-c) Junction to Case 1.67 ?C/W Rth (j-a) Junction to Ambient in free air 62.5 ?C/W ELECTRICAL CHARACTERISTICS (Tc=25?C unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Collector Emitter (sus) Voltage *VCEO(sus) IC=200mA, IB=0 60

1.7. mje3055t.pdf Size:137K _inchange_semiconductor

MJE3055
MJE3055
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055T DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Complement to Type MJE2955T APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IBB Base Current-Continuous 6 A Collector Power Dissipation PC @ TC=25? 75 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.67 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055T ELECTRICAL CHARACTERISTICS TC=25? unless other

1.8. mje3055.pdf Size:226K _inchange_semiconductor

MJE3055
MJE3055
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Complement to Type MJE2955 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IBB Base Current-Continuous 6 A Collector Power Dissipation PC @ TC=25? 90 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.39 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055 ELECTRICAL CHARACTERISTICS TC=25?

1.9. mje3055.pdf Size:223K _lge

MJE3055
MJE3055
MJE3055(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 3 2 1 Features GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 10 A PC Collector Power Dissipation 2 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 70 V Collector-emitter breakdown voltage V(BR)CEO IC=200mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V Collector cut-off current ICBO VCB=70V, IE=0 1 mA Emitter cut-off current IEBO VEB=5V, IC=0 5 mA hFE(1) * VCE=4V, IC=4A 20 100 DC current gain hFE(2) * VCE=4V,

1.10. mje3055.pdf Size:128K _wietron

MJE3055
MJE3055
MJE3055 Plastic-Encapsulate Power Transistors 1 2 3 1. BASE 2. COLLECTOR TO-220 3. EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Value Rating Symbol Unit Collector-Emitter Voltage V 60 CEO Vdc Collector-Base Voltage VCBO 70 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current (DC) IC(DC) 10 Adc Total Device Disspation T =25 C C 75 W PD Derate above 25 C 0.6 W/ C -55 to +150 C Operating and Storage Junction Temperature Range Tj , Tstg ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= 200 mAdc, IB=0) V(BR)CEO 60 Vdc - Collector-Base Breakdown Voltage (IC= 1.0 mAdc, IE=0) V(BR)CBO 70 Vdc V(BR)EBO 5.0 - Vdc Emitter-Base Breakdown Voltage (IE= 1.0 mAdc, IC=0) ICBO - 1.0 nAdc Collector Cutoff Current (V = 70 Vdc, IE=0) CB IEBO Emitter Cutoff Current (VEB= 5.0Vdc, I =0) - 5.0 nAdc C WEITRON http://www.weitron.com.tw MJE3055 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Coun

1.11. hmje3055t.pdf Size:41K _hsmc

MJE3055
MJE3055
Spec. No. : HE6737 HI-SINCERITY Issued Date : 1993.09.24 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/4 HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE3055T is designed for general purpose of amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25°C) • Maximum Temperature Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 75 W Total Power Dissipation (TA=25°C) ................................................................................................................... 0

See also transistors datasheet: MJE2955 , MJE2955K , MJE2955T , MJE29A , MJE29B , MJE29C , MJE30 , MJE3054 , 9015 , MJE3055K , MJE3055T , MJE30A , MJE30B , MJE30C , MJE31 , MJE31A , MJE31B .

Keywords

 MJE3055 Datasheet  MJE3055 Datenblatt  MJE3055 RoHS  MJE3055 Distributor
 MJE3055 Application Notes  MJE3055 Component  MJE3055 Circuit  MJE3055 Schematic
 MJE3055 Equivalent  MJE3055 Cross Reference  MJE3055 Data Sheet  MJE3055 Fiche Technique

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