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MJE350
  MJE350
  MJE350
 
MJE350
  MJE350
  MJE350
 
MJE350
  MJE350
 
 
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100DA025D .. 2N1011
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2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
MJE350 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

MJE350 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJE350

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 300

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of MJE350 transistor: TO126

MJE350 Equivalent Transistors - Cross-Reference Search

MJE350 PDF doc:

1.1. mje350re.pdf Size:124K _motorola

MJE350
MJE350
Order this document MOTOROLA by MJE350/D SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP 0.5 AMPERE Silicon Transistor POWER TRANSISTOR PNP SILICON . . . designed for use in line–operated applications such as low power, line–operated 300 VOLTS series pass and switching regulators requiring PNP capability. 20 WATTS • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc • Excellent DC Current Gain — hFE = 30–240 @ IC = 50 mAdc • Plastic Thermopad Package IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII CASE 77–08 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIII IIIIII IIII TO–225AA TYPE IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIII IIIIII IIII IIIIII IIII MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIII IIIIII IIII IIIIII IIII IIIIII IIII Rating Symbol Value Unit IIIIIIIIIIII

1.2. mje340-mje350.pdf Size:66K _st

MJE350
MJE350
MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a silicon epitaxial planar NPN 1 2 transistor intended for use in medium power 3 linear and switching applications.It is mounted in SOT-32. The complementary PNP type is MJE350. SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN MJE340 Unit PNP MJE350 Unit VCEO Collector-Emitter Voltage (IB = 0) 300 V VEBO Emitter-Base Voltage (IC = 0) 3 V I Collector Current 0.5 A C o Ptot Total Power Dissipation at Tcase ? 25 C 20.8 W o Tstg Storage Temperature -65 to 150 C o T Max Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/5 June 1997 MJE340 / MJE350 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 6.0 C/W o ELECTRICAL CHARACTERISTICS (Tcase =25 C unless

1.3. mje340_mje350.pdf Size:501K _st

MJE350
MJE350
MJE340 MJE350 ® COMPLEMETARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 1 2 The MJE340 is a Silicon Epitaxial Planar NPN 3 transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. SOT-32 The complementary PNP type is MJE350. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN MJE340 PNP MJE350 VCEO Collector-Emitter Voltage (IB = 0) 300 V V Emitter-Base Voltage (I = 0) 3 V EBO C IC Collector Current 0.5 A Ptot Total Power Dissipation at Tcase ? 25 oC 20.8 W o T Storage Temperature -65 to 150 C stg o Tj Max Operating Junction Temperature 150 C For PNP types voltage and current values are negative. 1/5 April 2003 MJE340 / MJE350 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 6.0 C/W ELECTRICAL CHARACTERISTICS (T = 25 oC unless

1.4. mje350.pdf Size:36K _fairchild_semi

MJE350
MJE350
MJE350 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to MJE340 TO-126 1 1. Emitter 2.Collector 3.Base ..PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO Collector-Emitter Voltage - 300 V VEBO Emitter-Base Voltage - 5 V IC Collector Current - 500 mA PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = - 1mA, IB = 0 -300 V ICBO Collector Cut-off Current VCB = - 300V, IE = 0 -100 µA IEBO Emitter Cut-off Current VBE = - 3V, IC = 0 -100 µA hFE DC Current Gain VCE = - 10V, IC = - 50mA 30 240 ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE350 Typic

1.5. mje350.pdf Size:133K _onsemi

MJE350
MJE350
MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • High Collector-Emitter Sustaining Voltage - 0.5 AMPERE VCEO(sus) = 300 Vdc @ IC POWER TRANSISTOR = 1.0 mAdc PNP SILICON • Excellent DC Current Gain - hFE = 30-240 @ IC 300 VOLTS, 20 WATTS = 50 mAdc • Plastic Thermopad Package • Pb-Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit TO-225 CASE 77 Collector-Emitter Voltage VCEO 300 Vdc IIIIIIIIIII IIII IIIIIIIIIII IIII IIII III IIII III STYLE 1 Emitter-Base Voltage VEB 3.0 Vdc 3 2 IIIIIIIIIII IIII IIIIIIIIIII IIII IIII III IIII III 1 Collector Current - Continuous IC 500 mAdc IIIIIIIIIII IIII IIIIIIIIIII IIII IIII III IIII III Total Power Dissipation @ TC = 25_C PD 20 W IIIIIIIIIII IIII IIII III Derate above 25_C 0.16 mW/_C MARKING DIAGRAM I

1.6. mje350.pdf Size:204K _cdil

MJE350
MJE350
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTOR MJE350 TO126 Plastic Package E C B Designed for use in Line-Operated Applications sush as Low Power, Line- Operated Series Pass and Switching Regulators ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 300 V Collector -Base Voltage VCBO 300 V VEBO Emitter Base Voltage 3.0 V IC Collector Current Continuous 500 mA Power Dissipation @ Ta=25?C PD 1.25 W Derate above 25?C 10 mW/?C Power Dissipation @ Tc=25?C PD 20 W Derate above 25?C 0.16 W/?C Operating And Storage Junction Tj, Tstg - 65 to +150 ?C Temperature Range THERMAL CHARACTERISTICS Junction to Ambient in free air Rth (j-a) 100 ?C/W Junction to Case Rth (j-c) 6.25 ?C/W ELECTRICAL CHARACTERISTICS (Tc=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT VCEO (sus) IC=1mA, IB=0 Collector Emitter Sustaining Vol

1.7. mje350.pdf Size:117K _inchange_semiconductor

MJE350
MJE350
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJE350 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·DC Current Gain- : hFE = -100(Min) @ IC= -50mA ·Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= -50mA ·Complement to Type MJE340 APPLICATIONS ·Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -3 V IC Collector Current-Continuous -0.5 A Collector Power Dissipation PC TC=25? 20 W Junction Temperature 150 ? Ti Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 6.25 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJE350 ELECTRICAL CHA

See also transistors datasheet: MJE3439 , MJE344 , MJE3440 , MJE344K , MJE345 , MJE34A , MJE34B , MJE34C , BC108 , MJE3520 , MJE3521 , MJE370 , MJE370K , MJE371 , MJE371K , MJE3738 , MJE3739 .

Keywords

 MJE350 Datasheet  MJE350 Datenblatt  MJE350 RoHS  MJE350 Distributor
 MJE350 Application Notes  MJE350 Component  MJE350 Circuit  MJE350 Schematic
 MJE350 Equivalent  MJE350 Cross Reference  MJE350 Data Sheet  MJE350 Fiche Technique

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