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MJE350 Transistor. Datasheet pdf. Equivalent

Type Designator: MJE350

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO126

MJE350 Transistor Equivalent Substitute - Cross-Reference Search

MJE350 Datasheet PDF:

1.1. mje350re.pdf Size:124K _motorola

MJE350
MJE350

Order this document MOTOROLA by MJE350/D SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP 0.5 AMPERE Silicon Transistor POWER TRANSISTOR PNP SILICON . . . designed for use in line–operated applications such as low power, line–operated 300 VOLTS series pass and switching regulators requiring PNP capability. 20 WATTS • High Collector–Emitter Sustaining Voltage — VCEO(sus)

1.2. mje340_mje350.pdf Size:501K _st

MJE350
MJE350

MJE340 MJE350 ® COMPLEMETARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 1 2 The MJE340 is a Silicon Epitaxial Planar NPN 3 transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. SOT-32 The complementary P

1.3. mje340-mje350.pdf Size:66K _st

MJE350
MJE350

MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a silicon epitaxial planar NPN 1 2 transistor intended for use in medium power 3 linear and switching applications.It is mounted in SOT-32. The complementary PNP type is MJE350. SOT-

1.4. mje350.pdf Size:36K _fairchild_semi

MJE350
MJE350

MJE350 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to MJE340 TO-126 1 1. Emitter 2.Collector 3.Base ..PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO Collector-Emitter Voltage - 300 V VEBO Emi

1.5. mje350.pdf Size:133K _onsemi

MJE350
MJE350

MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • High Collector-Emitter Sustaining Voltage - 0.5 AMPERE VCEO(sus) = 300 Vdc @ IC POWER TRANSISTOR = 1.0 mAdc PNP SILICON • Excellent DC Current Gain

1.6. mje350.pdf Size:204K _cdil

MJE350
MJE350

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTOR MJE350 TO126 Plastic Package E C B Designed for use in Line-Operated Applications sush as Low Power, Line- Operated Series Pass and Switching Regulators ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 300 V Collector

1.7. mje350.pdf Size:117K _inchange_semiconductor

MJE350
MJE350

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJE350 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·DC Current Gain- : hFE = -100(Min) @ IC= -50mA ·Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= -50mA ·Complement to Type MJE340 APPLICATIONS ·Designed for high voltage and general purpose a

Datasheet: MJE3439 , MJE344 , MJE3440 , MJE344K , MJE345 , MJE34A , MJE34B , MJE34C , BC108 , MJE3520 , MJE3521 , MJE370 , MJE370K , MJE371 , MJE371K , MJE3738 , MJE3739 .

 


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