MJE701T Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJE701T

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 50

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of MJE701T transistor: TO220

MJE701T Equivalent Transistors - Cross-Reference Search

MJE701T PDF document for downloads:

1.1. mje701t.pdf Size:235K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE701T DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO =-60 V ·DC Current Gain— : hFE = 750(Min) @ IC=-2A ·Complement to Type MJE801T APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IBB Base Current -0.1 A Collector Power Dissipation PC TC=25? 50 W Junction Temperature 150 ? Ti Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 2.5 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE701T ELECTRICAL CHARAC

4.1. mje701.pdf Size:229K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE701 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO =-60 V ·DC Current Gain— : hFE = 750(Min) @ IC=-2 A ·Complement to Type MJE801 APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IBB Base Current -0.1 A Collector Power Dissipation PC TC=25? 40 W Junction Temperature 150 ? Ti Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 3.13 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE701 ELECTRICAL CHARACT

5.1. mje700re.pdf Size:256K _motorola

Order this document MOTOROLA by MJE700/D SEMICONDUCTOR TECHNICAL DATA PNP MJE700,T Plastic Darlington Complementary Silicon Power MJE702 Transistors MJE703 . . . designed for general–purpose amplifier and low–speed switching applications. NPN • High DC Current Gain — MJE800,T hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage MJE802 Multiplication • Choice of Packages — IIIIIIIIIIIIIIIIIIIIIII MJE700 and MJE800 series MJE803 T0220AB, MJE700T and MJE800T IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII MAXIMUM RATINGS 4.0 AMPERE IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII MJE702 DARLINGTON MJE703 IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII POWER TRANSISTORS MJE700,T MJE802 COMPLEMENTARY IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII IIIII IIII M

5.2. mje700.pdf Size:51K _fairchild_semi

MJE700/701/702/703 Monolithic Construction With Built-in Base- Emitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Equivalent Circuit C Sym- Unit Parameter Value bol s VCBO Collector- Base Voltage : MJE700/701 - 60 V : MJE702/703 - 80 V B VCEO Collector-Emitter Voltage : MJE700/701 - 60 V : MJE702/703 - 80 V VEBO Emitter- Base Voltage - 5 V IC Collector Current - 4 A R1 R2 IB Base Current - 0.1 A R1 ? 10k? E PC Collector Dissipation (TC=25°C) 40 W R2 ? 0.6k? TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage : MJE700/701 IC = - 10mA, IB = 0 -60 V : MJE702/703 -80 V ICEO Collector

5.3. mje700.pdf Size:228K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE700 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO =-60 V ·DC Current Gain— : hFE = 750(Min) @ IC=-1.5 A ·Complement to Type MJE800 APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IBB Base Current -0.1 A Collector Power Dissipation PC TC=25? 40 W Junction Temperature 150 ? Ti Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 3.13 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE700 ELECTRICAL CHARA

5.4. mje700t.pdf Size:235K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE700T DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO =-60 V ·DC Current Gain— : hFE = 750(Min) @ IC=-1.5A ·Complement to Type MJE800T APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IBB Base Current -0.1 A Collector Power Dissipation PC TC=25? 50 W Junction Temperature 150 ? Ti Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 2.5 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE700T ELECTRICAL CHAR

5.5. mje703t.pdf Size:235K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE703T DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO =-80 V ·DC Current Gain— : hFE = 750(Min) @ IC=-2A ·Complement to Type MJE803T APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IBB Base Current -0.1 A Collector Power Dissipation PC TC=25? 50 W Junction Temperature 150 ? Ti Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 2.5 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE703T ELECTRICAL CHARAC

5.6. mje703.pdf Size:127K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE703 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -80 V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A = 100(Min) @ IC= -4A ·Complement to Type MJE803 APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IBB Base Current -1 A Collector Power Dissipation PC TC=25? 40 W Junction Temperature 150 ? Ti Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 3.13 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE703 ELECTRICA

5.7. mje702t.pdf Size:235K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE702T DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO =-80 V ·DC Current Gain— : hFE = 750(Min) @ IC=-2A ·Complement to Type MJE802T APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IBB Base Current -0.1 A Collector Power Dissipation PC TC=25? 50 W Junction Temperature 150 ? Ti Storage Temperature Range -55~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 2.5 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE702T ELECTRICAL CHARAC

See also transistors datasheet: MJE6041 , MJE6042 , MJE6043 , MJE6044 , MJE6045 , MJE700 , MJE700T , MJE701 , BC557 , MJE702 , MJE702T , MJE703 , MJE703T , MJE710 , MJE711 , MJE712 , MJE720 .

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