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MJH16004 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJH16004

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 100

Maximum collector-base voltage |Ucb|, V: 850

Maximum collector-emitter voltage |Uce|, V: 450

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF: 200

Forward current transfer ratio (hFE), min: 5

Noise Figure, dB: -

Package of MJH16004 transistor: TO218

MJH16004 Equivalent Transistors - Cross-Reference Search

MJH16004 PDF document for downloads:

3.1. mjh16006.pdf Size:337K _motorola

Order this document MOTOROLA by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA MJH16006A Designer's? Data Sheet NPN Silicon Power Transistor POWER TRANSISTORS 1 kV SWITCHMODE Series 8 AMPERES 500 VOLTS These transistors are designed for high–voltage, high–speed, power switching in 150 WATTS inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. Typical Applications: Features: • Switching Regulators • Collector–Emitter Voltage — VCEV = 1000 Vdc • Inverters • Fast Turn–Off Times • Solenoids 80 ns Inductive Fall Time — 100_C (Typ) • Relay Drivers 120 ns Inductive Crossover Time — 100_C (Typ) • Motor Controls 800 ns Inductive Storage Time — 100_C (Typ) • Deflection Circuits • 100_C Performance Specified for: Reverse–Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents • Extended FBSOA Rating Using Ultra–fast Rectifiers IIIIIIIIIIIIIIIIIIIIIII • Extremel

3.2. mjh16008.pdf Size:142K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJH16008 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IBB Base Current-Continuous 6 A IBM Base Current-Peak 12 A Collector Power Dissipation PC @TC=25? 125 W TJ Junction Temperature 150 ? Storage Temperature -65~150 ? Tstg THERMAL CHARACTERISTICS

3.3. mjh16006.pdf Size:142K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJH16006 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IBB Base Current-Continuous 6 A IBM Base Current-Peak 12 A Collector Power Dissipation PC @TC=25? 125 W TJ Junction Temperature 150 ? Storage Temperature -65~150 ? Tstg THERMAL CHARACTERISTICS

See also transistors datasheet: MJH11020 , MJH11021 , MJH11022 , MJH12004 , MJH13090 , MJH13091 , MJH16002 , MJH16002A , GT806B , MJH16006 , MJH16006A , MJH16008 , MJH16106 , MJH6282 , MJH6283 , MJH6284 , MJH6285 .

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