2N4386
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2N4386
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.5
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.8
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 120
Collector capacitance (Cc), pF: 8
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: - Package of 2N4386
transistor: TO18
2N4386
Equivalent Transistors - Cross-Reference Search 2N4386
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. Keywords| 2N4386
Datasheet | 2N4386
Datenblatt | 2N4386
RoHS | 2N4386
Distributor | | 2N4386
Application Notes | 2N4386
Component | 2N4386
Circuit | 2N4386
Schematic | | 2N4386
Equivalent | 2N4386
Cross Reference | 2N4386
Data Sheet | 2N4386
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