MM558-02
Transistor Datasheet. Parameters and Characteristics. Type Designator: MM558-02
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.4
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 60
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.6
Maximum junction temperature (Tj), °C: 200
Transition frequency (ft), MHz: 250
Collector capacitance (Cc), pF: 8
Forward current transfer ratio (hFE), min: 100
Noise Figure, dB: - Package of MM558-02
transistor: TO86
MM558-02
Equivalent Transistors - Cross-Reference Search MM558-02
PDF document for downloads: PDF unavailable! See also transistors datasheet: MM511
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. Keywords| MM558-02
Datasheet | MM558-02
Datenblatt | MM558-02
RoHS | MM558-02
Distributor | | MM558-02
Application Notes | MM558-02
Component | MM558-02
Circuit | MM558-02
Schematic | | MM558-02
Equivalent | MM558-02
Cross Reference | MM558-02
Data Sheet | MM558-02
Fiche Technique |
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