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2N4397 Transistor (IC) Datasheet. Cross Reference Search. 2N4397 Equivalent

Type Designator: 2N4397

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.05

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 600

Collector capacitance (Cc), pF: 0.2

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2N4397 transistor: TO72

2N4397 Transistor Equivalent Substitute - Cross-Reference Search

2N4397 PDF:

5.1. 2n4398_2n4399_2n5745.pdf Size:237K _motorola

2N4397
2N4397

Order this document MOTOROLA by 2N4398/D SEMICONDUCTOR TECHNICAL DATA 2N4347 (See 2N3442) PNP Silicon High-Power Transistors 2N4398 . . . designed for use in power amplifier and switching circuits. • Low Collector–Emitter Saturation Voltage — 2N4399 IC = 15 Adc, VCE(sat) = 1.0 Vdc (Max) 2N4398,99 2N5745 IC = 15 Adc, VCE(sat) = 1.5 Vdc (Max) 2N5745 IIIIIIIIIIIIIIIIIIIIIII • DC Curren

5.2. 2n4391_pn4391_sst4391_2n4392_pn4392_sst4392_2n4393_pn4393_sst4393.pdf Size:59K _vishay

2N4397
2N4397

2N/PN/SST4391 Series Vishay Siliconix N-Channel JFETs 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N/PN/SST4391 –4 to –10 30 5 4 2N/PN/SST4392 –2 to –5 60 5 4 2N/PN/SST4393 –0.5 to –3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 4391<30 W D Low Error Voltage D Ana

5.3. 2n4391_2n4392_2n4393.pdf Size:106K _central

2N4397
2N4397

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com

5.4. 2n4398-99_2n5745.pdf Size:158K _mospec

2N4397
2N4397

A A A A

5.5. 2n4392.pdf Size:15K _semelab

2N4397
2N4397

2N4392 MECHANICAL DATA Dimensions in mm (inches) JFET SWITCHING 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) N CHANNEL- DEPLETION 4.52 (0.178) FEATURES • LOW ON RESISTANCE 0.48 (0.019) 0.41 (0.016) • FAST SWITCHING dia. • MILITARY OPTIONS AVAILABLE 2.54 (0.100) Nom. 3 1 2 APPLICATIONS: • SWITCHING APPLICATIONS TO–18 METAL PACKAGE Underside View PIN 1 – Source PIN 2 – Drain PIN 3

5.6. 2n4391.pdf Size:13K _semelab

2N4397
2N4397

2N4391 MECHANICAL DATA Dimensions in mm (inches) JFET SWITCHING 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) N CHANNEL- DEPLETION 4.52 (0.178) FEATURES • LOW ON RESISTANCE 0.48 (0.019) 0.41 (0.016) • FAST SWITCHING dia. • MILITARY OPTIONS AVAILABLE 2.54 (0.100) Nom. 3 1 2 APPLICATIONS: • SWITCHING APPLICATIONS TO–18 METAL PACKAGE Underside View PIN 1 – Source PIN 2 – Drain PIN 3

5.7. 2n4391_2n4392_2n4393_pn4391_pn4392_pn4393_sst4391_sst4392_sst4393.pdf Size:29K _calogic

2N4397
2N4397

N-Channel JFET Switch CORPORATION 2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A • r <300 Ohms (2N4391) • ds(on) • I <100pA Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V • D(OFF) • Switches ±10VAC With ±15V Supplies (4392, 4393) Gate Current . . . . . . . . . . . . . . . . . . . . . . .

5.8. 2n4399.pdf Size:38K _inchange_semiconductor

2N4397
2N4397

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4399 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A ·Wide Area of Safe Operation ·Complement to Type 2N5302 APPLICATIONS ·Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector

5.9. 2n4398_2n4399_2n5745.pdf Size:121K _inchange_semiconductor

2N4397
2N4397

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2N5301/5302/5303 Ў¤ Low collector saturation voltage Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For use in power amplifier and switching circuits applications. PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N4398 2N4399 2N5745 Fig.1 simplified

5.10. 2n4398.pdf Size:38K _inchange_semiconductor

2N4397
2N4397

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4398 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A ·Wide Area of Safe Operation ·Complement to Type 2N5301 APPLICATIONS ·Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector

See also transistors datasheet: 2N4387 , 2N4388 , 2N4389 , 2N438A , 2N439 , 2N4390 , 2N4395 , 2N4396 , 2N3906 , 2N4398 , 2N4399 , 2N439A , 2N43A , 2N44 , 2N440 , 2N4400 , 2N4401 .

Search Terms:

 2N4397 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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