All Transistors Datasheet

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT3904LT1/D General Purpose Transistor MMBT3904LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit CASE 318�08, STYLE 6 Collector�Emitter Voltage VCEO 40 Vdc SOT�23 (TO�236AB) Collector�Base Voltage VCBO 60 Vdc Emitter�Base Voltage VEBO 6.0 Vdc Collector Current � Continuous IC 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR�5 Board(1) PD 225 mW TA = 25�C Derate above 25�C 1.8 mW/�C Thermal Resistance Junction to Ambient RqJA 556 �C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25�C Derate above 25�C 2.4 mW/�C Thermal Resistance Junction to Ambient RqJA 417 �C/W Junction and Storage Temperature TJ, Tstg �55 to +150 �C DEVICE MARKING MMBT3904LT1 = 1AM ELECTRICAL CHARACTERISTICS (TA = 25�C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERI

5.2. mmbt3904lt1rev1d.pdf Size:164K _motorola

5.3. mmbt3904_06.pdf Size:423K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA MMBT3904WT1/D General Purpose Transistors NPN NPN and PNP Silicon MMBT3904WT1 PNP These transistors are designed for general purpose amplifier applications. They are housed in the SOT�323/SC�70 which is designed for low power surface mount MMBT3906WT1 applications. MAXIMUM RATINGS Rating Symbol Value Unit GENERAL PURPOSE AMPLIFIER TRANSISTORS Collector�Emitter Voltage MMBT3904WT1 VCEO 40 Vdc MMBT3906WT1 �40 SURFACE MOUNT Collector�Base Voltage MMBT3904WT1 VCBO 60 Vdc MMBT3906WT1 �40 Emitter�Base Voltage MMBT3904WT1 VEBO 6.0 Vdc MMBT3906WT1 �5.0 3 Collector Current � Continuous MMBT3904WT1 IC 200 mAdc MMBT3906WT1 �200 1 THERMAL CHARACTERISTICS 2 Characteristic Symbol Max Unit CASE 419�02, STYLE 3 Total Device Dissipation(1) PD 150 mW SOT�323/SC�70 TA = 25�C Thermal Resistance, Junction to Ambient RqJA 833 �C/W Junction and Storage Temperature TJ, Tstg �55 to +150 �C DEVICE MARKING MMBT3904WT1 =

5.4. mmbt3906.pdf Size:221K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT3906LT1/D General Purpose Transistor MMBT3906LT1 COLLECTOR PNP Silicon 3 Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector�Emitter Voltage VCEO �40 Vdc CASE 318�08, STYLE 6 Collector�Base Voltage VCBO �40 Vdc SOT�23 (TO�236AB) Emitter�Base Voltage VEBO �5.0 Vdc Collector Current � Continuous IC �200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR�5 Board(1) PD 225 mW TA = 25�C Derate above 25�C 1.8 mW/�C Thermal Resistance Junction to Ambient RqJA 556 �C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25�C Derate above 25�C 2.4 mW/�C Thermal Resistance Junction to Ambient RqJA 417 �C/W Junction and Storage Temperature TJ, Tstg �55 to +150 �C DEVICE MARKING MMBT3906LT1 = 2A ELECTRICAL CHARACTERISTICS (TA = 25�C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARAC

5.5. mmbt3904wt1_mmbt3906wt1.pdf Size:297K _motorola

5.6. mmbt3904w_mmbt3906wt1.pdf Size:423K _motorola

5.7. mmbt3416lt3rev0.pdf Size:297K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT3416LT3/D General Purpose Amplifier MMBT3416LT3 NPN Silicon COLLECTOR 3 1 3 BASE 1 2 2 EMITTER CASE 318�08, STYLE 6 SOT�23 (TO�236AB) MAXIMUM RATINGS Rating Symbol Value Unit Collector�Emitter Voltage VCEO 40 Vdc Emitter�Base Voltage VEBO 4.0 Vdc Collector Current � Continuous IC 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR�5 Board(1) PD 225 mW TA = 25�C Derate above 25�C 1.8 mW/�C Thermal Resistance Junction to Ambient RqJA 556 �C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25�C Derate above 25�C 2.4 mW/�C Thermal Resistance Junction to Ambient RqJA 417 �C/W Junction and Storage Temperature TJ, Tstg �55 to +150 �C DEVICE MARKING MMBT3416LT3 = GP ELECTRICAL CHARACTERISTICS (TA = 25�C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector�Emitter Breakdown Voltage V(BR)CEO 40 � Vdc (I

5.8. mmbt3640.pdf Size:176K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT3640LT1/D Switching Transistor MMBT3640LT1 COLLECTOR PNP Silicon 3 Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector�Emitter Voltage VCEO �12 Vdc CASE 318�08, STYLE 6 Collector�Base Voltage VCBO �12 Vdc SOT�23 (TO�236AB) Emitter�Base Voltage VEBO �4.0 Vdc Collector Current � Continuous IC �80 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR�5 Board(1) PD 225 mW TA = 25�C Derate above 25�C 1.8 mW/�C Thermal Resistance, Junction to Ambient RqJA 556 �C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25�C Derate above 25�C 2.4 mW/�C Thermal Resistance, Junction to Ambient RqJA 417 �C/W Junction and Storage Temperature TJ, Tstg �55 to +150 �C DEVICE MARKING MMBT3640LT1 = 2J ELECTRICAL CHARACTERISTICS (TA = 25�C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERIS

5.9. mmbt3904_1.pdf Size:54K _philips

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3904 NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT3904 FEATURES PINNING � Low current (max. 100 mA) PIN DESCRIPTION � Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector � Telephony and professional communication equipment. DESCRIPTION handbook, halfpage NPN switching transistor in a SOT23 plastic package. 3 3 PNP complement: MMBT3906. 1 MARKING TYPE NUMBER MARKING CODE(1) 2 1 2 MMBT3904 7A? Top view MAM255 Note 1. ? = p: Made in Hong Kong. ? = t: Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 40 V VEBO emitter-base voltage open collector - 6V IC collector cur

5.10. mmbt3906_1.pdf Size:54K _philips

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3906 PNP switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP switching transistor MMBT3906 FEATURES PINNING � Low current (max. 100 mA) PIN DESCRIPTION � Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector � Telephony and professional communication equipment. DESCRIPTION handbook, halfpage 3 PNP switching transistor in a SOT23 plastic package. 3 NPN complement: MMBT3904. 1 MARKING 2 TYPE NUMBER MARKING CODE(1) 1 2 MMBT3906 7B? Top view MAM256 Note 1. ? = p: made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. ? = t: made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --40 V VCEO collector-emitter voltage open base --40 V VEBO emitter-base voltage open collector --6V IC collector

5.11. mmbt3906.pdf Size:63K _st

MMBT3906 � SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking MMBT3906 36 SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS MMBT3904 APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -60 V VCEO Collector-Emitter Voltage (IB = 0) -40 V VEBO Emitter-Base Voltage (IC = 0) -6 V IC Collector Current -200 mA P Total Dissipation at T = 25 oC 350 mW tot C o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C 1/4 June 2002 Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) MMBT3906 THERMAL DATA o Rthj-amb � Thermal Resistance Junction-Ambient Max 357.1 C/W 2 � Device mounted on

5.12. mmbt3904.pdf Size:58K _st

MMBT3904 � SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT3904 34 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT3906 APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 60 V VCEO Collector-Emitter Voltage (IB = 0) 40 V VEBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 200 mA P Total Dissipation at T = 25 oC 350 mW tot C o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C 1/4 June 2002 MMBT3904 THERMAL DATA o Rthj-amb � Thermal Resistance Junction-Ambient Max 357.1 C/W 2 � Device mounted on a PCB area of 1 cm ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) cas

5.13. mmbt3904t.pdf Size:132K _fairchild_semi

February 2008 MMBT3904T NPN Epitaxial Silicon Transistor Features C � General purpose amplifier transistor. E � Ultra-Small Surface Mount Package for all types. B � Suitable for general switching & amplification Marking : A04 � Well suited for portable application SOT-523F � As complementary type, PNP MMBT3906T is recommended Absolute Maximum Ratings Ta = 25�C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA TJ Junction Temperature 150 �C TSTG Storage Temperature Range -55 ~ 150 �C * 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* Ta=25�C unless otherwise noted Symbol Parameter Max Unit PC Collector Power Dissipatio

5.14. mmbt3906k.pdf Size:118K _fairchild_semi

MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25�C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA PC Collector Power Dissipation 350 mW TJ, TSTG Operating Junction and Storage Temperature Range -55 ~ 150 �C Electrical Characteristics Ta=25�C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC = -10�A, IE = 0 -40 V BVCEO Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0 -40 V BVEBO Emitter-Base Breakdown Voltage IE = 10�A, IC = 0 -5 V ICEX Collector Cut-off Current VCE = -30V, VEB = -3V -50 nA hFE DC Current Gain * VCE = -1V, IC = -0.1mA 60 VCE = -1V, IC = -1mA 80 VCE = -1V, IC = -10mA 100 300 VCE = -1V, IC = -50mA 60 VCE = -1V, IC = -100mA 30 VCE

5.15. mmbt3906t.pdf Size:131K _fairchild_semi

February 2008 MMBT3906T PNP Epitaxial Silicon Transistor Features C � General purpose amplifier transistor. E � Ultra-Small Surface Mount Package for all types. B � Suitable for general switching & amplification Marking : A06 � Well suited for portable application SOT-523F � As complementary type, NPN MMBT3904T is recommended Absolute Maximum Ratings Ta = 25�C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current 200 mA TJ Junction Temperature 150 �C TSTG Storage Temperature Range -55 ~ 150 �C * 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* Ta=25�C unless otherwise noted Symbol Parameter Max Unit PC Collector Power Dissipa

5.16. 2n3906_mmbt3906_pzt3906.pdf Size:106K _fairchild_semi

2N3906 MMBT3906 PZT3906 C C E E C C TO-92 B B B E SOT-223 SOT-23 Mark: 2A PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 �A to 100 mA. Absolute Maximum Ratings* TA = 25�C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -200 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg �C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25�C unless otherwise noted Symbol Characteristic Max Units 2N3906 *MMBT3906 **P

5.17. mmbt3904k.pdf Size:121K _fairchild_semi

MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25�C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TJ, TSTG Operating Junction and Storage Temperature Range -55 ~ 150 �C Electrical Characteristics Ta=25�C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 10�A, IE = 0 60 V BVCEO Collector-Emitter Breakdown Voltage * IC = 1mA, IB = 0 40 V BVEBO Emitter-Base Breakdown Voltage IE = 10�A, IC = 0 6 V ICEX Collector Cut-off Current VCE = 30V, VEB = 3V 50 nA hFE DC Current Gain * VCE = 1V, IC = 0.1mA 40 VCE = 1V, IC = 1mA 70 VCE = 1V, IC = 10mA 100 300 VCE = 1V, IC = 50mA 60 VCE = 1V, IC = 100mA 30 VCE(sat) Collector-Emitter

5.18. 2n3904_mmbt3904_pzt3904.pdf Size:111K _fairchild_semi

2N3904 MMBT3904 PZT3904 C C E E C C TO-92 B B SOT-23 B E SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* TA = 25�C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg �C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25�C unless otherwise noted Symbol Characteristic Max

5.19. mmbt3906sl.pdf Size:140K _fairchild_semi

February 2008 MMBT3906SL C PNP Epitaxial Silicon Transistor Features E � General purpose amplifier transistor. � Ultra small surface mount package for all types(max 0.43mm tall) B � Suitable for general switching & amplification Marking : AB SOT-923F � Well suited for portable application � As complementary type, NPN MMBT3904SL is recommended. � Pb free Absolute Maximum Ratings Ta = 25�C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current 200 mA TJ Junction Temperature 150 �C TSTG Storage Temperature Range -55 ~ 150 �C * 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* Ta=25�C unless otherwise noted Symbol Parameter Max Unit

5.20. pn3640_mmbt3640.pdf Size:688K _fairchild_semi

5.21. mmbt3702_mps3702.pdf Size:308K _fairchild_semi

Discrete POWER & Signal Technologies MPS3702 MMBT3702 C E C TO-92 B B E SOT-23 Mark: 137 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25�C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V V Collector-Base Voltage 40 V CBO VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 800 mA -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range �C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25�C unless otherwise n

5.22. mmbt3904sl.pdf Size:141K _fairchild_semi

February 2008 MMBT3904SL C NPN Epitaxial Silicon Transistor Features � General purpose amplifier transistor. E � Ultra small surface mount package for all types(max 0.43mm tall) B � Suitable for general switching & amplification � Well suited for portable application Marking : AA SOT-923F � As complementary type, PNP MMBT3906SL is recommended � Pb free Absolute Maximum Ratings Ta = 25�C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA TJ Junction Temperature 150 �C TSTG Storage Temperature Range -55 ~ 150 �C * 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* Ta=25�C unless otherwise noted Symbol Parameter Max Unit P

5.23. mmbt3646.pdf Size:47K _fairchild_semi

MMBT3646 Switching Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TC=25�C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCES Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5 IC Collector Current (DC) - Continuous 300 mA PD Total Device Dissipation @ TA=25�C 625 mW - Derate above 25�C 5 mW/�C TJ, TSTG Operating and Storage Junction Temperature Range 150 �C Electrical Characteristics TC=25�C unless otherwise noted Symbol Parameter Min. Typ. Max. Units Off Characteristics V(BR)CES Collector-Emitter Breakdown Voltage (IC = 100�Adc, VBE = 0) 40 V VCEO(SUS) Collector-Emitter Sustaining Voltage (1) (IC = 10mAdc, IB = 0) 15 V V(BR)CBO Collector-Base Breakdown Voltage (IC = 100�Adc, IE = 0) 40 V V(BR)EBO Emitter-Base Breakdown Voltage (IE = 100�Adc, IC = 0) 5 V ICES Collector Cut-off Current (VCE = 20Vdc, VBE = 0) 0.5 �A (VCE = 20Vdc, VBE = 0, TA = 65�

5.24. mmbt3906t_2.pdf Size:172K _diodes

MMBT3906T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A � Epitaxial Planar Die Construction SOT-523 � Complementary NPN Type Available (MMBT3904T) C Dim Min Max Typ � Lead Free/RoHS Compliant (Note 2) � "Green" Device (Note 3 and 4) A 0.15 0.30 0.22 B C TOP VIEW B 0.75 0.85 0.80 Mechanical Data B E C 1.45 1.75 1.60 G � Case: SOT-523 D ? ? 0.50 H � Case Material: Molded Plastic. UL Flammability G 0.90 1.10 1.00 Classification Rating 94V-0 K � Moisture Sensitivity: Level 1 per J-STD-020C M N H 1.50 1.70 1.60 � Terminals: Solderable per MIL-STD-202, Method 208 J 0.00 0.10 0.05 � Lead Free Plating (Matte Tin Finish annealed over J Alloy 42 leadframe) D L K 0.60 0.80 0.75 � Terminal Connections: See Diagram C L 0.10 0.30 0.22 � Marking Information: 3N, See Page 3 � Ordering & Date Code Information: See Page 3 M 0.10 0.20 0.12 � Weight: 0.002 grams (approximate) N 0.45 0.65 0.50 ? 0� 8� ? B E All Dimensions in mm Maximum

5.25. mmbt3906.pdf Size:75K _diodes

MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data � Epitaxial Planar Die Construction � Case: SOT-23 � Complementary NPN Type Available (MMBT3904) � Case Material: Molded Plastic, �Green� Molding Compound, (Note 3). UL Flammability Classification Rating 94V-0 � Ideal for Low Power Amplification and Switching � Moisture Sensitivity: Level 1 per J-STD-020D � Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) � Terminal Connections: See Diagram � �Green� Device (Note 3) � Terminals: Lead Free Plating (Matte Tin Finish annealed over � Qualified to AEC-Q101 Standards for High Reliability Alloy 42 leadframe). Solderable per MIL-STD-202, Method 208 � Marking Information: See Page 3 � Ordering Information: See Page 3 � Weight: 0.008 grams (approximate) C B E Top View Device Schematic Maximum Ratings @TA = 25�C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Vo

5.26. mmbt3906lp.pdf Size:157K _diodes

MMBT3906LP 40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data � Complementary NPN Type Available (MMBT3904LP) � Case: DFN1006-3 � Ultra-Small Leadless Surface Mount Package � Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 � �Lead Free�, RoHS Compliant (Note 1) � Moisture Sensitivity: Level 1 per J-STD-020 � Halogen and Antimony Free. "Green" Device (Note 2) � Terminals: Finish ? NiPdAu over Copper leadframe. Solderable � ESD rating: 200V-MM, 4KV-HBM per MIL-STD-202, Method 208 � Weight: 0.008 grams (approximate) C DFN1006-3 B B C E E Bottom View Device Symbol Top View Device Schematic Ordering Information Product Marking Reel size (inches) Tape width (mm) Quantity per reel MMBT3906LP-7 3N 7 8mm 3,000 MMBT3906LP-7B 3N 7 8mm 10,000 Notes: 1. No purposefully added lead. 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packagin

5.27. mmbt3904.pdf Size:86K _diodes

MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data � Epitaxial Planar Die Construction � Case: SOT-23 � Complementary PNP Type Available (MMBT3906) � Case Material: Molded Plastic, �Green� Molding Compound, (Note 3). UL Flammability Classification Rating 94V-0 � Ideal for Medium Power Amplification and Switching � Moisture Sensitivity: Level 1 per J-STD-020D � Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) � Terminal Connections: See Diagram � "Green" Device (Note 3) � Terminals: Lead Free Plating (Matte Tin Finish annealed over � Qualified to AEC-Q101 Standards for High Reliability Alloy 42 leadframe). Solderable per MIL-STD-202, Method 208 � Marking Information: See Page 4 � Ordering Information: See Page 4 � Weight: 0.008 grams (approximate) C B E Top View Device Schematic Maximum Ratings @TA = 25�C unless otherwise specified Characteristic Symbol Valu

5.28. mmbt3904t_2.pdf Size:173K _diodes

MMBT3904T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A � Epitaxial Planar Die Construction SOT-523 � Complementary PNP Type Available (MMBT3906T) C Dim Min Max Typ � Ultra-Small Surface Mount Package � Lead Free/RoHS Compliant (Note 2) A 0.15 0.30 0.22 TOP VIEW B C � "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 B E C 1.45 1.75 1.60 Mechanical Data G D ? ? 0.50 H � Case: SOT-523 G 0.90 1.10 1.00 � Case Material: Molded Plastic. UL Flammability K Classification Rating 94V-0 M N H 1.50 1.70 1.60 � Moisture Sensitivity: Level 1 per J-STD-020C J 0.00 0.10 0.05 � Terminals: Solderable per MIL-STD-202, Method 208 J D L � Lead Free Plating (Matte Tin Finish annealed over K 0.60 0.80 0.75 Alloy 42 leadframe). C L 0.10 0.30 0.22 � Terminal Connections: See Diagram � Marking Information: 1N, See Page 3 M 0.10 0.20 0.12 � Ordering & Date Code Information: See Page 3 N 0.45 0.65 0.50 � Weight: 0.002 grams (approximate) ? 0� 8

5.29. smbt3904series_mmbt3904.pdf Size:145K _infineon

SMBT3904...MMBT3904 NPN Silicon Switching Transistors � High DC current gain: 0.1 mA to 100 mA � Low collector-emitter saturation voltage � For SMBT3904S / SMBT3904U: Two (galvanic) internal isolated transistors with good matching in one package � Complementary types: SMBT3906... MMBT3906 � SMBT3904S / U: For orientation in reel see package information below � Pb-free (RoHS compliant) package1) � Qualified according AEC Q101 SMBT3904S/U C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07178 Type Marking Pin Configuration Package SMBT3904/MMBT3904 s1A 1=B 2=E 3=C - - - SOT23 SMBT3904S s1A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 SMBT3904U s1A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1 Pb-containing package may be available upon special request 2007-09-20 1 SMBT3904...MMBT3904 Maximum Ratings Parameter Symbol Value Unit 40 V Collector-emitter voltage VCEO 60 Collector-base voltage VCBO 6 Emitter-base voltage VEBO 200 mA Collector current IC mW Total power dis

5.30. mmbt3904_sot-23.pdf Size:332K _mcc

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT3904 Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features � Capable of 350mWatts of Power Dissipation and 200mA Ic. NPN General � Operating and Storage Junction Temperatures: -55 to 150 � Surface Mount SOT-23 Package Purpose Amplifier � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) � Epoxy meets UL 94 V-0 flammability rating � Moisure Sensitivity Level 1 � Marking Code:1AM SOT-23 � Thermal Resistance Junction to Ambient: 385 oC/W A � Thermal Resistance Junction to Case: 185 oC/W D Electrical Characteristics @ 25�C Unless Otherwise Specified C Symbol Parameter Min Max Units B C OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* 40 Vdc (IC=1.0mAdc, IB=0) B E F E V(BR)CBO Collector-Base Breakdown Voltage 60 Vdc (IC=10�Adc, IE=0) V(BR)EBO Emitter-Base Breakdown Voltage 6.0 Vdc

5.31. mmbt3906t_sot-523.pdf Size:238K _mcc

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMBT3906T CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP General � Surface Mount SOT-523 Package � Epitaxial Planar Die Construction Purpose Transistor � Epoxy meets UL 94 V-0 flammability rating � Moisure Sensitivity Level 1 � Marking:3N SOT-523 Maximum Ratings A Symbol Rating Rating Unit D VCEO Collector-Emitter Voltage -40 V C VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V C B IC Collector Current -200 mA R JA Typical Thermal Resistance Junction 833 /W to Ambient B E E PD Power Dissipation 150 mW TJ Junction Temperature -55 to +150 TSTG Storage Temperature -55 to +150 G H J Electrical Characteristics @ 25�C Unless Otherwise Specified K Symbol Parameter Min Max Units OFF CHARACTERISTICS DIMENSIONS

5.32. mmbt3906_sot-23.pdf Size:497K _mcc

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMBT3906 CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) � Epoxy meets UL 94 V-0 flammability rating PNP General � Moisure Sensitivity Level 1 � Capable of 300mWatts of Power Dissipation Purpose Amplifier � Marking:2A Maximum Ratings Symbol Rating Rating Unit SOT-23 VCEO Collector-Emitter Voltage-40V A VCBO Collector-Base Voltage-40V D VEBO Emitter-Base Voltage-5.0V C C IC Collector Current, Continuous-0.2 A PD Power Dissipation 0.3 W B C O TJ Operating Junction Temperature -55 to +150 C O TSTG Storage Temperature -55 to +150 C B E B E O F E Electrical Characteristics @ 25 C Unless Otherwise Specified Symbol Parameter Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* -40 Vdc (IC=-1.0mAdc, IB=0) G H J V(BR)CBO Collector-Base

5.33. mmbt3904t_sot-523.pdf Size:216K _mcc

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components MMBT3904T CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features 150mW � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General � Operatingand Storage Junction Temperatures: -55 to 150 Purpose Amplifier � Epoxy meets UL 94 V-0 flammability rating � Moisure Sensitivity Level 1 � Collector Current: 0.2A � Marking: 1N SOT-523 A Electrical Characteristics @ 25�C Unless Otherwise Specified D Symbol Parameter Min Max Units C OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* 40 Vdc C B (IC=1.0mAdc, IB=0) V(BR)CBO Collector-Base Breakdown Voltage 60 Vdc (IC=10�Adc, IE=0) B E V(BR)EBO Emitter-Base Breakdown Voltage 6.0 Vdc E (IE=10�Adc, IC=0) ICBO Collector Cut-off Current 50 nAdc (VCB=30Vdc, IE=0) IEBO Emitter Cut-off Current 50 nAdc G H J (VEB=5Vdc, IC=0) ON CHARACT

5.34. mmbt3906tt1.pdf Size:86K _onsemi

MMBT3906TT1 General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier http://onsemi.com applications. It is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. GENERAL PURPOSE AMPLIFIER TRANSISTORS Features SURFACE MOUNT � Pb-Free Package is Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25�C) Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO -40 Vdc BASE Collector-Base Voltage VCBO -40 Vdc 2 Emitter-Base Voltage VEBO -5.0 Vdc EMITTER Collector Current - Continuous IC -200 mAdc THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit 2 Total Device Dissipation, PD 1 FR-4 Board (Note 1) @TA = 25�C 200 mW Derated above 25�C 1.6 mW/�C CASE 463 Thermal Resistance, Junction-to-Ambient RqJA 600 �C/W SOT-416/SC-75 (Note 1) STYLE 1 Total Device Dissipation, PD FR-4 Board (Note 2) @TA = 25�C 300 mW MARKING DIAGRAM Derated above 25�C 2.4 mW/�C Thermal Resistance, Junct

5.35. mmbt3416lt3g.pdf Size:230K _onsemi

MMBT3416LT3G General Purpose Amplifier NPN Silicon Features � These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO 40 Vdc BASE Collector-Base Voltage VEBO 4.0 Vdc Collector Current - Continuous IC 100 mAdc 2 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 3 Total Device Dissipation FR-5 Board, PD (Note 1) TA = 25�C 225 mW 1 Derate above 25�C 1.8 mW/�C 2 Thermal Resistance, Junction-to-Ambient RqJA 556 �C/W Total Device Dissipation Alumina Substrate, PD SOT-23 (TO-236) (Note 2) TA = 25�C 300 mW CASE 318 Derate above 25�C 2.4 mW/�C STYLE 6 Thermal Resistance, Junction-to-Ambient RqJA 417 �C/W Junction and Storage Temperature TJ, Tstg -55 to +150 �C MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Con

5.36. mmbt3904lt1-d.pdf Size:114K _onsemi

MMBT3904LT1G General Purpose Transistor NPN Silicon Features � These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO 40 Vdc BASE Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc 2 EMITTER Collector Current - Continuous IC 200 mAdc Collector Current - Peak (Note 3) ICM 900 mAdc 3 THERMAL CHARACTERISTICS SOT-23 (TO-236) Characteristic Symbol Max Unit CASE 318 1 Total Device Dissipation FR-5 Board PD STYLE 6 (Note 1) @TA = 25�C 225 mW 2 Derate above 25�C 1.8 mW/�C Thermal Resistance, Junction-to-Ambient RqJA 556 �C/W MARKING DIAGRAM Total Device Dissipation Alumina PD Substrate, (Note 2) @TA = 25�C 300 mW 1AM M G Derate above 25�C 2.4 mW/�C G Thermal Resistance, Junction-to-Ambient RqJA 417 �C/W 1 Junction and Storage Temperature TJ, Tstg -55 to +150 �C 1AM = Specific Device Code Stresses exceeding Maximum Ra

5.37. mmbt3904wt1_mmbt3906wt1.pdf Size:160K _onsemi

MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http://onsemi.com These transistors are designed for general purpose amplifier COLLECTOR applications. They are housed in the SOT-323/SC-70 package which 3 is designed for low power surface mount applications. Features 1 � These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 3 SC-70 (SOT-323) Collector-Emitter Voltage VCEO Vdc CASE 419 1 MMBT3904WT1 40 STYLE 3 2 MMBT3906WT1 -40 Collector-Base Voltage VCBO Vdc MMBT3904WT1 60 MMBT3906WT1 -40 MARKING DIAGRAM Emitter-Base Voltage VEBO Vdc MMBT3904WT1 6.0 xx M G MMBT3906WT1 -5.0 G Collector Current - Continuous IC mAdc 1 MMBT3904WT1 200 MMBT3906WT1 -200 xx = AM for MMBT3904WT1 THERMAL CHARACTERISTICS = 2A for MMBT3906WT1 M = Date Code* Characteristic Symbol Max Unit G = Pb-Free Package Total Device Dissipation (Note 1) PD 150 mW (Note: Micr

5.38. mmbt3906lt1-d.pdf Size:120K _onsemi

MMBT3906LT1G General Purpose Transistor PNP Silicon Features � These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -40 Vdc 2 Collector-Base Voltage VCBO -40 Vdc EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -200 mAdc 3 Collector Current - Peak (Note 3) ICM -800 mAdc 1 THERMAL CHARACTERISTICS 2 Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board PD SOT-23 (TO-236) (Note 1) @ TA = 25�C 225 mW CASE 318 Derate above 25�C 1.8 mW/�C STYLE 6 Thermal Resistance, Junction-to-Ambient RqJA 556 �C/W MARKING DIAGRAM Total Device Dissipation Alumina PD Substrate, (Note 2) @ TA = 25�C 300 mW Derate above 25�C 2.4 mW/�C Thermal Resistance, Junction-to-Ambient RqJA 417 �C/W 2A M G G Junction and Storage Temperature TJ, Tstg -55 to +150 �C 1 Stresses exceeding Maximum Ratings may damage the

5.39. mmbt3904tt1.pdf Size:102K _onsemi

MMBT3904TT1 General Purpose Transistors NPN Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. http://onsemi.com Features GENERAL PURPOSE � Pb-Free Package is Available AMPLIFIER TRANSISTORS SURFACE MOUNT MAXIMUM RATINGS (TA = 25�C) COLLECTOR Rating Symbol Value Unit 3 Collector - Emitter Voltage VCEO 40 Vdc Collector - Base Voltage VCBO 60 Vdc 1 BASE Emitter - Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 200 mAdc 2 THERMAL CHARACTERISTICS EMITTER Characteristic Symbol Max Unit Total Device Dissipation, PD FR-4 Board (Note 1) @TA = 25�C 200 mW 3 SOT-416/SC-75 Derated above 25�C 1.6 mW/�C CASE 463 Thermal Resistance, Junction- to- Ambient RqJA 600 �C/W 2 STYLE 1 (Note 1) 1 Total Device Dissipation, PD FR-4 Board (Note 2) @TA = 25�C 300 mW Derated above 25�C 2.4 mW/�C MARKING DIAGRAM Thermal Resistance, J

5.40. mmbt3904t.pdf Size:785K _secos

MMBT3904T NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES ? Simplifies Circuit Design. ? We Declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping MMBT3904T MA 3000/Tape&Reel Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 1.50 1.70 K 0.30 0.50 o B 0.75 0.95 M --- 10o C 0.60 0.80 N --- 10 D 0.23 0.33 S 1.50 1.70 G 0.50BSC J 0.10 0.20 MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Emitter Voltage VCEO 40 Vdc Collector - Base Voltage VCBO 60 Vdc Emitter - Base Voltage VEBO 6.0 Vdc mAdc Collector Current - Continuous IC 200 200 mW Total Device Dissapation FR-4 Board(1) PD TA=25?, Derate above 25? 1.6 mW/? Thermal Resistance, Junction to Ambient R?JA 600 ? / W 300 mW Total Device Dissapation FR-4 Board(2)

5.41. mmbt3904fw.pdf Size:179K _secos

MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES SOT-523 A Epitaxial Planar Die Construction Dim Min Max L Complementary PNP Type Available A 1.500 1.700 (MMBT3906FW) B 0.750 0.850 Ideal for Medium Power Amplification and S Top View B C 0.700 0.900 Switching D 0.250 0.350 COLLECTOR V G G 0.900 1.100 3 3 H 0.000 0.100 C J 0.100 0.200 1 1 2 BASE K 0.220 0.500 H J D K SOT-523 L 0.400 0.600 2 S 1.500 1.700 EMITTER V 0.200 0.400 MAXIMUM RATINGS All Dimension in mm Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 200 mW TA = 25°C Derate above 25°C 1.6 mW/°C Thermal Resistance Junction to Ambient(1) RqJA 600 °C/W Total Device Dissipation(2) PD 3

5.42. mmbt3906fw.pdf Size:183K _secos

MMBT3906FW PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES SOT-523 Epitaxial Planar Die Construction A Dim Min Max Complementary NPN Type Available L (MMBT3904FW) A 1.500 1.700 Ideal for Medium Power Amplification and B 0.750 0.850 S Switching Top View B C 0.700 0.900 D 0.250 0.350 COLLECTOR V G G 0.900 1.100 3 3 H 0.000 0.100 C J 0.100 0.200 1 1 2 K 0.220 0.500 BASE H J D K SOT-523 L 0.400 0.600 S 1.500 1.700 2 EMITTER V 0.200 0.400 All Dimension in mm MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–4 Board(1) PD 200 mW TA = 25°C Derate above 25°C 1.6 mW/°C Thermal Resistance Junction to Ambient RqJA 600 °C/W Total Device Dissipatio

5.43. mmbt3906.pdf Size:1061K _secos

MMBT3906 -200 mA, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 ? Collector current capability IC=-200mA ? Collector-emitter voltage VCEO=-40V. APPLICATION A L ? General switching and amplification. 3 3 Top View C B PACKAGING DIMENSION 1 1 2 2 K E Collector ?? D H J F G ?? Base ?? Emitter Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.80 3.00 G 0.10 REF. B 2.25 2.55 H 0.55 REF. MARKING C 1.20 1.40 J 0.08 0.15 D 0.90 1.15 K 0.5 REF. E 1.80 2.00 L 0.95 TYP. F 0.30 0.50 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector - Emitter Voltage VCEO -40 Vdc Collector - Base Voltage VCBO -40 Vdc Emitter - Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -200 mAdc Total Device Dissipation FR-5 Board(1), TA=25°C 225 mW PD Total Device Dissipat

5.44. mmbt3906t.pdf Size:773K _secos

MMBT3906T PNP Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES ? Simplifies Circuit Design. ? We Declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping MMBT3906T 2A 3000/Tape&Reel Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 1.50 1.70 K 0.30 0.50 o B 0.75 0.95 M --- 10o C 0.60 0.80 N --- 10 D 0.23 0.33 S 1.50 1.70 G 0.50BSC J 0.10 0.20 MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Emitter Voltage VCEO -40 Vdc Collector - Base Voltage VCBO -40 Vdc Emitter - Base Voltage VEBO -5.0 Vdc mAdc Collector Current - Continuous IC -200 200 mW Total Device Dissapation FR-4 Board(1) PD TA=25?, Derate above 25? 1.6 mW/? Thermal Resistance, Junction to Ambient R?JA 600 ? / W 300 mW Total Device Dissapation FR-4 Boar

5.45. mmbt3906z.pdf Size:326K _secos

MMBT3906Z -200 mA, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-923 Collector current capability IC= -200mA Collector-emitter voltage VCEO= -40V. APPLICATION General switching and amplification. (Top View) MARKING Date code 3 PACKAGING DIMENSION Millimeter Millimeter REF. REF. Min. Max. Min. Max. Package MPQ Leader Size A 0.75 0.85 E 0.15 0.25 B 0.55 0.65 F 0.1 0.2 C 0.07 0.17 G 0.35 REF. SOT-923 8K 7 inch D 0.34 0.40 H 0.95 1.05 Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameters Symbol Rating Unit Collector - Emitter Voltage V -40 Vdc CEO Collector - Base Voltage V -40 Vdc CBO Emitter - Base Voltage VEBO -5 Vdc Collector Current - Continuous I -200 mAdc C T =25°C 290 mW A Total Device Dissipation 1 PD De-rate above 25°C 2.3 mW/°C Therma

5.46. mmbt3904.pdf Size:1271K _secos

MMBT3904 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 ? Collector current capability IC=200mA ? Collector-emitter voltage VCEO=40V. APPLICATION A L ? General switching and amplification. 3 3 Top View C B 1 1 2 2 K E PACKAGING DIMENSION D H J F G Collector ?? ?? Millimeter Millimeter Base REF. REF. Min. Max. Min. Max. A 2.80 3.00 G 0.10 REF. ?? B 2.25 2.55 H 0.55 REF. Emitter C 1.20 1.40 J 0.08 0.15 D 0.90 1.15 K 0.5 REF. E 1.80 2.00 L 0.95 TYP. F 0.30 0.50 MARKING ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector - Emitter Voltage VCEO 40 Vdc Collector - Base Voltage VCBO 60 Vdc Emitter - Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 200 mAdc Total Device Dissipation FR-5 Board(1), TA=25°C 225 mW PD Total Device Dissipation FR-5

5.47. mmbt3904z.pdf Size:318K _secos

MMBT3904Z 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-923 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION General switching and amplification. (Top View) MARKING Date code 2 PACKAGING DIMENSION Millimeter Millimeter REF. REF. Min. Max. Min. Max. Package MPQ Leader Size A 0.75 0.85 E 0.15 0.25 B 0.55 0.65 F 0.1 0.2 C 0.07 0.17 G 0.35 REF. SOT-923 8K 7 inch D 0.34 0.40 H 0.95 1.05 Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameters Symbol Rating Unit Collector - Emitter Voltage V 40 Vdc CEO Collector - Base Voltage V 60 Vdc CBO Emitter - Base Voltage VEBO 6 Vdc Collector Current - Continuous I 200 mAdc C T =25°C 290 mW A Total Device Dissipation 1 PD De-rate above 25°C 2.3 mW/°C Thermal Resistan

5.48. mmbt3904w.pdf Size:396K _secos

MMBT3904W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-323(SC-70) Epitaxial Planar Die Construction Dim Min Max A Complementary PNP Type Available L A 1.800 2.200 (MMBT3906W) B 1.150 1.350 3 Ideal for Medium Power Amplification and S C 0.800 1.000 Top View B Switching 1 2 D 0.300 0.400 COLLECTOR G 1.200 1.400 3 V G 3 H 0.000 0.100 J 0.100 0.250 1 C 1 BASE K 0.350 0.500 2 SC-70 H J D L 0.590 0.720 K SOT-323 2 S 2.000 2.400 EMITTER V 0.280 0.420 MAXIMUM RATINGS All Dimension in mm Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 200 mW TA = 25°C Derate above 25°C 1.6 mW/°C Thermal Resistance Ju

5.49. mmbt3906w.pdf Size:444K _secos

MMBT3906W PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES A suffix of "-C" specifies halogen & lead-free SOT-323(SC-70) Epitaxial Planar Die Construction Dim Min Max Complementary NPN Type Available (MMBT3904W) A 1.800 2.200 Ideal for Medium Power Amplification and B 1.150 1.350 A Switching L C 0.800 1.000 "Lead free is available" D 0.300 0.400 COLLECTOR G 1.200 1.400 S Top View B 3 3 H 0.000 0.100 J 0.100 0.250 1 V G 1 2 K 0.350 0.500 BASE SC-70 L 0.590 0.720 SOT-323 C S 2.000 2.400 2 H EMITTER J D V 0.280 0.420 K All Dimension in mm MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW

5.50. mmbt3906.pdf Size:323K _gsme

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3906 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO -40 Vdc ???-????? Collector-Base Voltage VCBO -40 Vdc ???-???? Emitter-Base Voltage VEBO -6.0 Vdc ???-???? Collector Current-Continuous Ic -200 mAdc ?????-?? THERMAL CHARACTERISTICS ¦THERMAL CHARACTERISTICS ??? THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ???? ?? ??? ?? Total Device Dissipation ????? 225 mW PD FR-5 Board(1) TA=25?????? 25? 1.8 mW/? Derate above25? ?? 25??? Total Device Dissipation ????? 300 mW PD Alumina Substrate, ?????(2) TA=25?????? 25? 2.4 mW/? Derate above25? ?? 25??? Thermal Resistance Junction to Ambient R 417 ?/W ?JA ?? Junction and Storage Temperature TJ,Tstg 150?, -55to+150? ??????? DEVICE MARKING ¦DEVICE MARKING

5.51. mmbt3904.pdf Size:321K _gsme

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3904(???? MMBT3904) MAXIMUM RATINGS MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO 40 Vdc ???-????? Collector-Base Voltage VCBO 60 Vdc ???-???? Emitter-Base Voltage VEBO 6.0 Vdc ???-???? Collector Current-Continuous Ic 200 mAdc ?????-?? THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS ¦THERMAL CHARACTERISTICS ??? THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ???? ?? ??? ?? Total Device Dissipation ????? 225 mW PD FR-5 Board(1) TA=25?????? 25? 1.8 mW/? Derate above25? ?? 25??? Total Device Dissipation ????? 300 mW PD Alumina Substrate, ?????(2) TA=25?????? 25? 2.4 mW/? Derate above25? ?? 25??? Thermal Resistance Junction to Ambient R 417 ?/W ?JA ?? Juncti

5.52. mmbt3906.pdf Size:245K _lge

MMBT3906 SOT-23 Transistor(PNP) 1. BASE 2. EMITTER SOT-23 3. COLLECTOR Features As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -40 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.3 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -10?A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10?A, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, E=0 -0.1 ?A Collector cut-off current ICEX VCE=-30V,VB

5.53. mmbt3906t.pdf Size:197K _lge

MMBT3906T SOT-523 Transistor (PNP) 1. BASE SOT-523 2. EMITTER 3. COLLECTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available Also Available in Lead Free Version MARKING:3N Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -40 V Collector-Emitter Voltage VEBO -5.0 V Emitter-Base Voltage IC Collector Current -Continuous -200 mA PC Collector Power Dissipation 150 mW R Thermal Resistance, Junction to Ambient 833 ?/W O JA TJ Operating Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10?A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10?A,IC=0 -5 V Collector cut-off current

5.54. mmbt3904.pdf Size:215K _lge

MMBT3904 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction MARKING: 1AM MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 200 mA PC Total Device Dissipation 200 mW R?JA Thermal Resistance Junction to Ambient 625 ?/W TJ Junction Temperature 150 ? Tstg Storage Temperature -55 to +150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC= 10?A, IE=0 60 V Collector-emitter breakdown voltage VCEO IC= 1mA, IB=0 40 V Emitter-base breakdown voltage VEBO IE=10?A, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 ?A Collector cut

5.55. mmbt3904t.pdf Size:355K _wietron

MMBT3904T General Purpose NPN SiliconTransistor 3 COLLECTOR 3 P b Lead(Pb)-Free 1 2 1 BASE SC-89 2 SOT-523F EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc Thermal Characteristics Characteristics Symbol Max Unit (1) Total Device Dissipation FR-5 Board mW 200 TA=25°C PD Derate above 25°C 1.6 mW/°C R?JA Thermal Resistance, Junction to Ambient °C/W 600 mW Total Device Dissipation 300 (2) Alumina Substrate, TA=25°C PD Derate above 25°C 2.4 mW/°C R?JA Thermal Resistance, Junction to Ambient 400 °C/W Junction Temperature TJ -55 to +150 °C Storage Temperature Tstg -55 to +150 °C Device Marking MMBT3904T=AM Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Unit Min Max Off Characteristics - Collector-Emitter Breakdown Voltage(3) (IC=1.0mA ,IB=0) V(BR)

5.56. mmbt3906e.pdf Size:156K _wietron

MMBT3906E PNP General Purpose Transistor 3 2 1 1 The MMBT3906E device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. SOT-1123 It is designed for general purpose amplifier applications and is housed in the SOT-1123 surface mount package. COLLECTOR This device is ideal for low-power surface mount applications 3 where board space is at a premium. FEATURES : 1 BASE • hFE 100-300 • Low VCE(sat) ? 0.4V • Reduces Board Space 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V -40 Vdc CEO Collector-Base Voltage VCBO -40 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current-Continuous IC -200 mAdc Thermal Characteristics Characteristics Unit Symbol Max Total Device Dissipation (1) Ta=25 °C PD 290 mW Derate above 25 °C 2.3 mW/ °C Thermal Resistance,Junction to Ambient R?JA 432 °C/W Total Device Dissipation (2) Ta=25 °C mW PD 347 2.8 Derate above 25 °C mW/ °C R?JA Thermal Re

5.57. mmbt3904e.pdf Size:157K _wietron

MMBT3904E NPN General Purpose Transistor 3 2 1 1 The MMBT3904E device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. SOT-1123 It is designed for general purpose amplifier applications and is housed in the SOT-1123 surface mount package. COLLECTOR This device is ideal for low-power surface mount applications 3 where board space is at a premium. FEATURES : 1 BASE • hFE 100-300 • Low VCE(sat) ? 0.4V • Reduces Board Space 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc Thermal Characteristics Characteristics Unit Symbol Max Total Device Dissipation (1) Ta=25 °C PD 290 mW Derate above 25 °C 2.3 mW/ °C Thermal Resistance,Junction to Ambient R?JA 432 °C/W Total Device Dissipation (2) Ta=25 °C mW PD 347 2.8 Derate above 25 °C mW/ °C R?JA Thermal Resist

5.58. mmbt3906.pdf Size:300K _wietron

MMBT3906 COLLECTOR 3 General Purpose Transistor 3 PNP Silicon 1 1 BASE 2 P b Lead(Pb)-Free SOT-23 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V -40 Vdc CEO Collector-Base Voltage VCBO -40 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current-Continuous IC mAdc -200 Thermal Characteristics Characteristics Symbol Max Unit (1) Total Device Dissipation FR-5 Board mW 225 TA=25 C PD Derate above 25 C 1.8 mW/ C R C/W Thermal Resistance, Junction to Ambient ? JA 556 mW Total Device Dissipation 300 (2) Alumina Substrate, TA=25 C PD Derate above 25 C 2.4 mW/ C R?JA Thermal Resistance, Junction to Ambient 417 C/W TJ,Tstg Junction and Storage,Temperature -55 to +150 C Device Marking MMBT3906=2A Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Unit Min Max Off Characteristics - Collector-Emitter Breakdown Voltage(3) (I =-1.0mAdc.IB=0) V(BR)CEO -40 Vdc C -40 - Collector-Bas

5.59. mmbt3906t.pdf Size:381K _wietron

MMBT3906T COLLECTOR 3 General Purpose Transistor 3 PNP Silicon 1 1 2 BASE P b Lead(Pb)-Free 2 SC-89 EMITTER (SOT-523F) Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V -40 V CEO Collector-Base Voltage VCBO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current-Continuous IC mA -200 Thermal Characteristics Characteristics Symbol Max Unit (1) Total Device Dissipation FR-5 Board mW 200 TA=25°C PD Derate above 25°C 1.6 mW/°C R?JA Thermal Resistance, Junction to Ambient °C/W 600 mW Total Device Dissipation 300 (2) Alumina Substrate, TA=25°C PD Derate above 25°C 2.4 mW/°C R?JA Thermal Resistance, Junction to Ambient 400 °C/W Junction Temperature TJ -55 to +150 °C Storage Temperature Tstg -55 to +150 °C Device Marking MMBT3906T = 2A Electrical Characteristics (T =25°C Unless Otherwise noted) A Characteristics Symbol Unit Min Max Off Characteristics - V(BR)CEO -40 Collector-Emitter Breakdown Voltage(3) (I

5.60. mmbt3904.pdf Size:205K _wietron

MMBT3904 COLLECTOR 3 General Purpose Transistor 3 NPN Silicon 1 1 BASE 2 2 SOT-23 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board (1) mW 225 TA=25 C PD Derate above 25 C 1.8 mW/ C R qJA Thermal Resistance, Junction to Ambient C/W 556 mW Total Device Dissipation 300 Alumina Substrate, (2) TA=25 C PD Derate above 25 C 2.4 mW/ C R Thermal Resistance, Junction to Ambient 417 C/W qJA TJ,Tstg Junction and Storage, Temperature -55 to +150 C Device Marking MMBT3904=1AM Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Unit Min Max Off C har acter istics - Collector-Emitter Breakdown Voltage(3) (I =1.0mAdc.IB=0) V(BR)CEO 40 Vdc C 60 - Collector-Base Breakdown Voltage (IC

5.61. mmbt3904w.pdf Size:373K _wietron

MMBT3904W COLLECTOR 3 General Purpose Transistor 3 NPN Silicon 1 BASE 1 2 2 EMITTER SOT-323(SC-70) Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation TA=25 C PD mW 150 R JA Thermal Resistance, Junction to Ambient q C/W 833 TJ,Tstg Junction and Storage, Temperature C -55 to +150 Device Marking MMBT3904W=AM Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Unit Min Max Off C har acter istics - Collector-Emitter Breakdown Voltage(2) (I =1.0mAdc.IB=0) V(BR)CEO 40 Vdc C 60 - Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0) V(BR)CBO Vdc - Vdc Emitter-Base Breakdown Voltage (IE=10 µAdc, IC=0) V(BR)EBO 6.0 IBL - 50 nAdc Base Cutoff Current (VCE=30 Vdc, VEB =3.0 Vdc) Collector Cutoff Current

5.62. mmbt3906w.pdf Size:345K _wietron

MMBT3906W COLLECTOR 3 General Purpose Transistor 3 PNP Silicon 1 BASE 1 2 2 EMITTER SOT-323(SC-70) M aximum R atings Rating Symbol Value Unit Collector-Emitter Voltage V -40 Vdc CEO Collector-Base Voltage VCBO -40 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current-Continuous IC mAdc -200 Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation mW PD 150 TA=25 C R JA Thermal Resistance, Junction to Ambient q 833 C/W TJ,Tstg Junction and Storage, Temperature -55 to +150 C Device Marking MMBT3906W=2A Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Unit Min Max Off Characteristics Collector-Emitter Breakdown Voltage(2) (I =-1.0mAdc.IB=0) V(BR)CEO -40 - Vdc C -40 - V(BR)CBO Collector-Base Breakdown Voltage (IC=-10 µAdc, IE=0) Vdc - Vdc Emitter-Base Breakdown Voltage (IE=-10 µAdc, IC=0) V(BR)EBO -5.0 IBL - -50 nAdc Base Cutoff Current (VCE=-30 Vdc, VEB =-3.0 Vdc) - -50 Colle

5.63. mmbt3906tt1.pdf Size:423K _willas

FM120-M WILLAS THRU MMBT3906TT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. PNP Silicon 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) FEATURE 0.012(0.3) Typ. • High current capability, low forward voltage drop. • Hig Simplifies Circuit Design. h surge capability. • Guardring for overvoltage protection. RoHS product for packing code suffix "G" 0.071(1.8) • Ultra high-speed switching. Halogen free product for packing code suffix "H" 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. • ORDERING INFORMATIONmental standards of Lead-free parts meet environ MIL-Device STD-19500 /228 Marking Shipp

5.64. mmbt3946dw1t1.pdf Size:397K _willas

FM120-M WILLAS MMBT3946DW1T1 THRU Dual General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to TheMMBT3946DW1T1 device is a spin–off of our popular optimize board space. 0.146(3.7) • Low power loss, high efficiency. SOT–23/SOT–323 three–leaded device. It is designed for general 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. purpose amplifier applications and is housed in the SOT–363 • High surge capability. six–leaded surface mount package. By putting two discrete devices in • Guardring for overvoltage protection. 6 50.071(1.8) • Ultra high-speed switching. 4 one package, this device is ideal for low–power surface mount 0

5.65. mmbt3904slt1.pdf Size:525K _willas

FM120-M WILLAS MMBT3904SLT1 THRU SOT-923 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline TRANSISTOR (NPN) Features • FEATURES Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H SOT–923 ? • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. MAXIMUM RArTINGS (Ted switching. 0.071(1.8) =25? unless otherwise noted) a • Ult a high-spe 1. BASE 0.056(1.4) Symbol • Silicon epitaxial planar chip, metal silicon junction. Value Unit Parameter 2. EMITTER • Collector-Base Voltage Lead-free parts meet environmental standards of V 60 V CBO MIL-ST

5.66. mmbt3904dw1t1.pdf Size:346K _willas

FM120-M WILLAS MMBT3904DW1T1 THRU Dual General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. The MMBT3904DW1T1 ficiency. is a spin–off of our popular 0.146(3.7) device • Low power loss, high ef 0.130(3.3) 0.012(0.3) Typ. SOT–23/SOT–323 athree–leaded odevice. oIt ais designed for general • High current c pability, low f rward v lt ge drop. 6 5 purpose amplifier applications and is housed in the SOT–363 • High surge capability. 4 six–leaded surface mount package. By putting two discrete devices in • Guardring for overvoltage protection. 0.071(1.8) • Ultra high-speed switching. one package, this device is ideal for low–power surface

5.67. mmbt390xwt1.pdf Size:460K _willas

NPN MMBT3904WT1 FM120-M WILLAS THRU PNP FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors MMBT3906WT1 SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers NPN and PNP Silicon better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. These transistors are designed for general purpose amplifier applications. They are housed 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) in the SOT–323/SC–70 which is designed for low power surface mount applications. 0.012(0.3) Typ. • High current capability, low forward voltage drop. • High surge capability. We declare that the material of product compliance with RoHS requirements. • Guardring for overvoltage protection. SOT– 323 071(1.8) 0. • Ultra high-speed switching. 0.056(1.4) • Silicon epi

5.68. mmbt3906lt1.pdf Size:355K _willas

FM120-M WILLAS THRU MMBT3906LT1 General Purpose BARRIER RECTIFIERS -20V- 200V Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H PNP Silicon • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) • RoHS product for packing code suffix "G", 0.012(0.3) Typ. • High current capability, low forward voltage drop. Halogen free product for packing code suffix "H" • High surge capability. . • Guardring for overvoltage protection. 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) ORDERING INFORMATION • Silicon epitaxial planar chip, metal silicon junction. Device Marking Shipping • Lead-free parts meet environmental standards of MIL-STD-19500 /228 MMBT3906LT1 2A 3000/Tape & Reel

5.69. mmbt3904tt1.pdf Size:386K _willas

FM120-M WILLAS THRU MMBT3904TT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features NPN ocess de • Batch prSiliconsign, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURE • Low profile surface mounted application in order to opti Simplifies Circuit Design. mize board space. 0.146(3.7) • Low power loss, high efficiency. RoHS product for packing code suffix "G" 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. Halogen free product for packing code suffix "H" • High surge capability. • Guardring for overvoltage protection. 0.071(1.8) • Ultra high-speed switching. ORDERING INFORMATION 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. Device Marking Shipping • Le ad-free parts meet environmental standards of MMBT3904TT1 MIL-S

5.70. mmbt3906dw1t1.pdf Size:344K _willas

FM120-M WILLAS MMBT3906DW1T1 THRU Dual Bias Resistor Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. The M MBT3906DW1T1 device isa spin–off of our popular • High surge capa SOT–23/SOT–323 bility. three–leaded device. It is designed for general • Guar ring for ov rvoltage prot ctio purpose damplifier eapplications eand n.is housed in the SOT–363 6 5 0.071(1.8) • Ultra high-speed switching. 40.056(1.4) six–leaded surface mount package. By putting two discrete devices in • xial planar chip, metal silicon junction. one

5.71. mmbt3904lt1.pdf Size:374K _willas

FM120-M WILLAS MMBT3904LT1 THRU General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. •RoHS product for packing code suffix "G", SOD-123H • Low profile surface mounted application in order to Halogen free product for packing code suffix "H" . optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. ORDERING INFORMATION • High surge capability. • Guardring for overvoltage protection. Shipping Device Marking 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) 1AM 3000/Tape & Reel MMBT3904LT1 • Silicon epitaxial planar chip, metal silicon junction. SOT–23 • Lead-free parts meet environmental standards of MIL-STD-19500 /228

See also transistors datasheet: MMBT2907ALT1 , MMBT2907AR , MMBT2907LT1 , MMBT2907R , MMBT3053 , MMBT3053A , MMBT3250 , MMBT3250A , BC639 , MMBT3251A , MMBT3563 , MMBT3564 , MMBT3565 , MMBT3566 , MMBT3567 , MMBT3568 , MMBT3569 .

Keywords

MMBT3251 Datasheet	MMBT3251 Datenblatt	MMBT3251 RoHS	MMBT3251 Distributor
MMBT3251 Application Notes	MMBT3251 Component	MMBT3251 Circuit	MMBT3251 Schematic
MMBT3251 Equivalent	MMBT3251 Cross Reference	MMBT3251 Data Sheet	MMBT3251 Fiche Technique


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