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2N4403
  2N4403
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2N4403
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2N4403
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List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2N4403 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N4403 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N4403

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.6

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 200

Collector capacitance (Cc), pF: 9

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N4403 transistor: TO92

2N4403 Equivalent Transistors - Cross-Reference Search

2N4403 PDF doc:

1.1. 2n4402_2n4403.pdf Size:297K _motorola

2N4403
2N4403
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4402/D General Purpose Transistors 2N4402 PNP Silicon * 2N4403 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 2904, STYLE 1 Rating Symbol Value Unit TO92 (TO226AA) CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 40 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watt Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage(1) V(B

1.2. 2n4403_3.pdf Size:52K _philips

2N4403
2N4403
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4403 PNP switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 May 05 Philips Semiconductors Product specification PNP switching transistor 2N4403 FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter Industrial and consumer switching applications. 1 DESCRIPTION handbook, halfpage 1 2 3 PNP switching transistor in a TO-92; SOT54 plastic 2 package. NPN complement: 2N4401. 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --40 V VCEO collector-emitter voltage open base --40 V VEBO emitter-base voltage open collector --5 V IC collector current (DC) --600 mA ICM peak collector current --800 mA IBM peak base current -

1.3. 2n4403_mmbt4403.pdf Size:69K _fairchild_semi

2N4403
2N4403
2N4403 MMBT4403 C E C TO-92 B SOT-23 B E Mark: 2T PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage40V VEBO Emitter-Base Voltage 5.0 V ICCollector Current - Continuous600mA Operating and Storage Junction Temperature Range -55 to +150 TJ, T C stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N4403 *MMBT4403 PD Total Device Dissipation 625 350 mW 5.0 2.

1.4. 2n4402-2n4403.pdf Size:54K _samsung

2N4403
2N4403
2N4402/4403 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 Collector-Emitter Voltage: VCEO= 40V Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 Refer to 2N4403 for graphs 1.Emitter 2.Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit -40 Collector-Base Breakdown Voltage BVCBO IC= -100 , IE=0 Collector-Emitter Breakdown Voltage BVCEO IC= -1mA, IB=0 -40 V V Emitter-Base Breakdown Voltage BVEBO IE= -100 , IC=0 -5 nA Collector Cut-off Current ICEX VCE= -35V, VEB=0.4V -100 nA Base Cut-off Current IBEV VCE= -35V, VEB=0.4V -100 DC Current Gain hFE VCE=1V, IC= -0.1mA :2N4403 30 VCE=1V, IC=

1.5. umt4403_sst4403_mmst4403_2n4403.pdf Size:51K _rohm

2N4403
2N4403
Transistors UMT4403 / SST4403 / MMST4403 / 2N4403 (SPEC-A31) 602 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such dev

1.6. 2n4402_2n4403.pdf Size:63K _central

2N4403
2N4403
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.7. 2n4403.pdf Size:233K _mcc

2N4403
2N4403
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2N4403 Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Through Hole Package Capable of 600mWatts of Power Dissipation PNP General Epoxy meets UL 94 V-0 flammability rating Purpose Amplifier Moisure Sensitivity Level 1 Marking:Type number Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) TO-92 Electrical Characteristics @ 25C Unless Otherwise Specified Symbol Parameter Min Max Units A E OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* -40 Vdc (IC=-1.0mAdc, IB=0) V(BR)CBO Collector-Base Breakdown Voltage -40 Vdc B (IC=-10Adc, IE=0) V(BR)EBO Emitter-Base Breakdown Voltage -5.0 Vdc (IE=-10Adc, IC=0) IBL Base Cutoff Current -0.1 Adc (VCE=-30Vdc, VBE=-3.0Vdc) ICEX Collector Cutoff Current -0.1 Adc (VCE=-30Vdc, VBE=-3.0Vdc) ON CHARACTERISTICS C hFE DC Current G

1.8. 2n4403-d.pdf Size:118K _onsemi

2N4403
2N4403
2N4403 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO 40 Vdc 1 EMITTER Collector - Base Voltage VCBO 40 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C TO-92 CASE 29 Total Device Dissipation @ TC = 25C PD 1.5 W STYLE 1 Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg -55 to +150 C 1 1 2 2 Temperature Range 3 3 STRAIGHT LEAD BENT LEAD THERMAL CHARACTERISTICS BULK PACK TAPE & REEL Characteristic Symbol Max Unit AMMO PACK Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operatio

1.9. 2n4403.pdf Size:140K _utc

2N4403
2N4403
UNISONIC TECHNOLOGIES CO., LTD 2N4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: 2N4403L ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2N4403-T92-B 2N4403L-T92-B TO-92 E B C Tape Box 2N4403-T92-K 2N4403L-T92-K TO-92 E B C Bulk www.unisonic.com.tw 1 of 5 Copyright © 2005 Unisonic Technologies Co., Ltd QW-R201-053.D 2N4403 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25?, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current-Continuous IC -600 mA Total Device Dissipation 625 mW PC Derate above 25? 5.0 mW/? Junction Temperature TJ +150 ? Storage Temperature TSTG -55 ~ +150 ? Note 1.

1.10. 2n4403.pdf Size:725K _secos

2N4403
2N4403
2N4403 PNP Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 FEATURES Power Dissipation o C MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Value Units Parameter Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V 0.43+0.08 –0.07 Collector Current -Continuous IC -600 mA 46+0.1 0. –0.1 Collector Power dissipation PC * 0.625 W (1.27 Typ.) o Junction Temperature TJ 150 C 1: Emitter +0.2 1.25–0.2 o 2: Base Storage Temperature Tstg -55to +150 C 1 2 3 3: Collector o Thermal Resistance, junction to Ambient R?JA 357 C /mW 2.54±0.1 o ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) C Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100µA,IE=0 -40 V Collector-emitter breakdown voltage V

1.11. 2n4403.pdf Size:268K _lge

2N4403
2N4403
2N4403(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PC Collector Power dissipation 0.625 W TJ Junction Temperature 150 ? Dimensions in inches and (millimeters) Tstg Storage Temperature -55 to +150 ? R?JA Thermal Resistance, junction to Ambient 357 ?/mW ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A,IC=0 -5 V Collector cut-off current ICBO VCB=-35V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA hFE(1) VCE=-1V,IC=-0.1

1.12. 2n4403.pdf Size:311K _wietron

2N4403
2N4403
2N4403 General Purpose Transistors TO-92 PNP Silicon COLLECTOR 3 2 BASE 1 1. EMITTER 2 3 1 2. BASE EMITTER 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N4403 Unit Collector-Emitter Voltage V CEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -600 mAdc Total Device Dissipation T =25 C PD 625 mW A Junction Temperature T 150 j C -55 to +150 Storage Temperature Tstg C DEVICE MARKING 2N4403=2N4403 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (1) (IC= -1.0 mAdc, IB=0) V(BR)CEO -40 Vdc - V(BR)CBO -40 Collector-Base Breakdown Voltage (IC= -0.1 mAdc, IE=0) Vdc - Vdc V(BR)EBO -5.0 Emitter-Base Breakdown Voltage (IE= -0.1 mAdc, IC=0) -0.1 ICBO uAdc - Base Cutoff Current (V = -35 Vdc, IE=0) CB - ICEO Collect Cutoff Current(VCE = -35 Vdc, I =0) uAdc -0.1 B < <2.0% 1. Pulse Test: Pulse Width 300 us, Duty Cycle WEITRO

1.13. h2n4403.pdf Size:53K _hsmc

2N4403
2N4403
Spec. No. : HE6221 HI-SINCERITY Issued Date : 1992.09.30 Revised Date : 2004.08.13 MICROELECTRONICS CORP. Page No. : 1/5 H2N4403 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N4403 is designed for general purpose switching and amplifier applications. Features TO-92 • Complementary to H2N4401 • High Power Dissipation: 625mW at 25°C • High DC Current Gain: 100-300 at 150mA • High Breakdown Voltage: 40V Min. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW • Maxim

1.14. 2n4403a3.pdf Size:295K _cystek

2N4403
2N4403
Spec. No. : C305A3 Issued Date : 2003.06.13 CYStech Electronics Corp. Revised Date : 2014.05.12 Page No. : 1/8 General Purpose PNP Epitaxial Planar Transistor 2N4403A3 Description • The 2N4403A3 is designed for using in driver stage of AF amplifier and general purpose amplification. • Large IC , IC Max .= -0.6A • Low VCE(sat), typically -0.2V at IC/IB = -300mA / -30mA. Ideal for low-voltage operation • Complementary to 2N4401A3. Symbol Outline 2N4403A3 TO-92 B:Base C:Collector E:Emitter E B C Ordering Information Device Package Shipping TO-92 2N4403A3-X-TB-G 2000 pcs / Tape & Box (Pb-free lead plating and halogen-free package) TO-92 1000 pcs/ bag, 10 bags/box, 2N4403A3-X-BK-G (Pb-free lead plating and halogen-free package) 10boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/b

See also transistors datasheet: 2N4399 , 2N439A , 2N43A , 2N44 , 2N440 , 2N4400 , 2N4401 , 2N4402 , BC148 , 2N4404 , 2N4405 , 2N4406 , 2N4407 , 2N4409 , 2N440A , 2N441 , 2N4410 .

Keywords

 2N4403 Datasheet  2N4403 Datenblatt  2N4403 RoHS  2N4403 Distributor
 2N4403 Application Notes  2N4403 Component  2N4403 Circuit  2N4403 Schematic
 2N4403 Equivalent  2N4403 Cross Reference  2N4403 Data Sheet  2N4403 Fiche Technique

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