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2N4403
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List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
2N4403 All Transistors Datasheet. Power MOSFET, IGBT, IC, Triacs Database. Semiconductor Catalog
 

2N4403 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N4403

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.6

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 200

Collector capacitance (Cc), pF: 9

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N4403 transistor: TO92

2N4403 Equivalent Transistors - Cross-Reference Search

2N4403 PDF doc:

1.1. 2n4402_2n4403.pdf Size:297K _motorola

2N4403
2N4403
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4402/D General Purpose Transistors 2N4402 PNP Silicon * 2N4403 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 2904, STYLE 1 Rating Symbol Value Unit TO92 (TO226AA) CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 40 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watt Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage(1) V(B

1.2. 2n4403_3.pdf Size:52K _philips

2N4403
2N4403
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4403 PNP switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 May 05 Philips Semiconductors Product specification PNP switching transistor 2N4403 FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter Industrial and consumer switching applications. 1 DESCRIPTION handbook, halfpage 1 2 3 PNP switching transistor in a TO-92; SOT54 plastic 2 package. NPN complement: 2N4401. 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --40 V VCEO collector-emitter voltage open base --40 V VEBO emitter-base voltage open collector --5 V IC collector current (DC) --600 mA ICM peak collector current --800 mA IBM peak base current -

1.3. 2n4403_mmbt4403.pdf Size:69K _fairchild_semi

2N4403
2N4403
2N4403 MMBT4403 C E C TO-92 B SOT-23 B E Mark: 2T PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage40V VEBO Emitter-Base Voltage 5.0 V ICCollector Current - Continuous600mA Operating and Storage Junction Temperature Range -55 to +150 TJ, T C stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N4403 *MMBT4403 PD Total Device Dissipation 625 350 mW 5.0 2.

1.4. 2n4402-2n4403.pdf Size:54K _samsung

2N4403
2N4403
2N4402/4403 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 Collector-Emitter Voltage: VCEO= 40V Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 Refer to 2N4403 for graphs 1.Emitter 2.Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit -40 Collector-Base Breakdown Voltage BVCBO IC= -100 , IE=0 Collector-Emitter Breakdown Voltage BVCEO IC= -1mA, IB=0 -40 V V Emitter-Base Breakdown Voltage BVEBO IE= -100 , IC=0 -5 nA Collector Cut-off Current ICEX VCE= -35V, VEB=0.4V -100 nA Base Cut-off Current IBEV VCE= -35V, VEB=0.4V -100 DC Current Gain hFE VCE=1V, IC= -0.1mA :2N4403 30 VCE=1V, IC=

1.5. umt4403_sst4403_mmst4403_2n4403.pdf Size:51K _rohm

2N4403
2N4403
Transistors UMT4403 / SST4403 / MMST4403 / 2N4403 (SPEC-A31) 602 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such dev

1.6. 2n4402_2n4403.pdf Size:63K _central

2N4403
2N4403
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.7. 2n4403.pdf Size:233K _mcc

2N4403
2N4403
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2N4403 Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Through Hole Package Capable of 600mWatts of Power Dissipation PNP General Epoxy meets UL 94 V-0 flammability rating Purpose Amplifier Moisure Sensitivity Level 1 Marking:Type number Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) TO-92 Electrical Characteristics @ 25C Unless Otherwise Specified Symbol Parameter Min Max Units A E OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* -40 Vdc (IC=-1.0mAdc, IB=0) V(BR)CBO Collector-Base Breakdown Voltage -40 Vdc B (IC=-10Adc, IE=0) V(BR)EBO Emitter-Base Breakdown Voltage -5.0 Vdc (IE=-10Adc, IC=0) IBL Base Cutoff Current -0.1 Adc (VCE=-30Vdc, VBE=-3.0Vdc) ICEX Collector Cutoff Current -0.1 Adc (VCE=-30Vdc, VBE=-3.0Vdc) ON CHARACTERISTICS C hFE DC Current G

1.8. 2n4403-d.pdf Size:118K _onsemi

2N4403
2N4403
2N4403 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO 40 Vdc 1 EMITTER Collector - Base Voltage VCBO 40 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C TO-92 CASE 29 Total Device Dissipation @ TC = 25C PD 1.5 W STYLE 1 Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg -55 to +150 C 1 1 2 2 Temperature Range 3 3 STRAIGHT LEAD BENT LEAD THERMAL CHARACTERISTICS BULK PACK TAPE & REEL Characteristic Symbol Max Unit AMMO PACK Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operatio

1.9. 2n4403.pdf Size:140K _utc

2N4403
2N4403
UNISONIC TECHNOLOGIES CO., LTD 2N4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: 2N4403L ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2N4403-T92-B 2N4403L-T92-B TO-92 E B C Tape Box 2N4403-T92-K 2N4403L-T92-K TO-92 E B C Bulk www.unisonic.com.tw 1 of 5 Copyright © 2005 Unisonic Technologies Co., Ltd QW-R201-053.D 2N4403 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25?, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current-Continuous IC -600 mA Total Device Dissipation 625 mW PC Derate above 25? 5.0 mW/? Junction Temperature TJ +150 ? Storage Temperature TSTG -55 ~ +150 ? Note 1.

1.10. 2n4403.pdf Size:725K _secos

2N4403
2N4403
2N4403 PNP Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 FEATURES Power Dissipation o C MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Value Units Parameter Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V 0.43+0.08 –0.07 Collector Current -Continuous IC -600 mA 46+0.1 0. –0.1 Collector Power dissipation PC * 0.625 W (1.27 Typ.) o Junction Temperature TJ 150 C 1: Emitter +0.2 1.25–0.2 o 2: Base Storage Temperature Tstg -55to +150 C 1 2 3 3: Collector o Thermal Resistance, junction to Ambient R?JA 357 C /mW 2.54±0.1 o ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) C Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100µA,IE=0 -40 V Collector-emitter breakdown voltage V

1.11. 2n4403.pdf Size:268K _lge

2N4403
2N4403
2N4403(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PC Collector Power dissipation 0.625 W TJ Junction Temperature 150 ? Dimensions in inches and (millimeters) Tstg Storage Temperature -55 to +150 ? R?JA Thermal Resistance, junction to Ambient 357 ?/mW ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A,IC=0 -5 V Collector cut-off current ICBO VCB=-35V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA hFE(1) VCE=-1V,IC=-0.1

1.12. 2n4403.pdf Size:311K _wietron

2N4403
2N4403
2N4403 General Purpose Transistors TO-92 PNP Silicon COLLECTOR 3 2 BASE 1 1. EMITTER 2 3 1 2. BASE EMITTER 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N4403 Unit Collector-Emitter Voltage V CEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -600 mAdc Total Device Dissipation T =25 C PD 625 mW A Junction Temperature T 150 j C -55 to +150 Storage Temperature Tstg C DEVICE MARKING 2N4403=2N4403 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (1) (IC= -1.0 mAdc, IB=0) V(BR)CEO -40 Vdc - V(BR)CBO -40 Collector-Base Breakdown Voltage (IC= -0.1 mAdc, IE=0) Vdc - Vdc V(BR)EBO -5.0 Emitter-Base Breakdown Voltage (IE= -0.1 mAdc, IC=0) -0.1 ICBO uAdc - Base Cutoff Current (V = -35 Vdc, IE=0) CB - ICEO Collect Cutoff Current(VCE = -35 Vdc, I =0) uAdc -0.1 B < <2.0% 1. Pulse Test: Pulse Width 300 us, Duty Cycle WEITRO

1.13. h2n4403.pdf Size:53K _hsmc

2N4403
2N4403
Spec. No. : HE6221 HI-SINCERITY Issued Date : 1992.09.30 Revised Date : 2004.08.13 MICROELECTRONICS CORP. Page No. : 1/5 H2N4403 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N4403 is designed for general purpose switching and amplifier applications. Features TO-92 • Complementary to H2N4401 • High Power Dissipation: 625mW at 25°C • High DC Current Gain: 100-300 at 150mA • High Breakdown Voltage: 40V Min. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW • Maxim

1.14. 2n4403a3.pdf Size:295K _cystek

2N4403
2N4403
Spec. No. : C305A3 Issued Date : 2003.06.13 CYStech Electronics Corp. Revised Date : 2014.05.12 Page No. : 1/8 General Purpose PNP Epitaxial Planar Transistor 2N4403A3 Description • The 2N4403A3 is designed for using in driver stage of AF amplifier and general purpose amplification. • Large IC , IC Max .= -0.6A • Low VCE(sat), typically -0.2V at IC/IB = -300mA / -30mA. Ideal for low-voltage operation • Complementary to 2N4401A3. Symbol Outline 2N4403A3 TO-92 B:Base C:Collector E:Emitter E B C Ordering Information Device Package Shipping TO-92 2N4403A3-X-TB-G 2000 pcs / Tape & Box (Pb-free lead plating and halogen-free package) TO-92 1000 pcs/ bag, 10 bags/box, 2N4403A3-X-BK-G (Pb-free lead plating and halogen-free package) 10boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/b

See also transistors datasheet: 2N4399 , 2N439A , 2N43A , 2N44 , 2N440 , 2N4400 , 2N4401 , 2N4402 , BC148 , 2N4404 , 2N4405 , 2N4406 , 2N4407 , 2N4409 , 2N440A , 2N441 , 2N4410 .

Keywords

 2N4403 Datasheet  2N4403 Design 2N4403 MOSFET 2N4403 Power
 2N4403 RoHS Compliant 2N4403 Service 2N4403 Triacs 2N4403 Semiconductor
 2N4403 Database 2N4403 Innovation 2N4403 IC 2N4403 Electricity

 

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