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2N4403 Transistor (IC) Datasheet. Cross Reference Search. 2N4403 Equivalent

Type Designator: 2N4403

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.6

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 200

Collector capacitance (Cc), pF: 9

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N4403 transistor: TO92

2N4403 Transistor Equivalent Substitute - Cross-Reference Search

 

2N4403 PDF:

1.1. 2n4402_2n4403.pdf Size:297K _motorola

2N4403
2N4403

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4402/D General Purpose Transistors 2N4402 PNP Silicon * 2N4403 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 Rating Symbol Value Unit TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 5.0 Vdc C

1.2. 2n4403_3.pdf Size:52K _philips

2N4403
2N4403

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4403 PNP switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 May 05 Philips Semiconductors Product specification PNP switching transistor 2N4403 FEATURES PINNING • High current (max. 600 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter • Industrial and c

1.3. 2n4403_mmbt4403.pdf Size:69K _fairchild_semi

2N4403
2N4403

2N4403 MMBT4403 C E C TO-92 B SOT-23 B E Mark: 2T PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage40V VEBO Emitter-Base Voltage 5.0 V I

1.4. 2n4402-2n4403.pdf Size:54K _samsung

2N4403
2N4403

2N4402/4403 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 40V • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Dissipation PC 625

1.5. umt4403_sst4403_mmst4403_2n4403.pdf Size:51K _rohm

2N4403
2N4403

Transistors UMT4403 / SST4403 / MMST4403 / 2N4403 (SPEC-A31) 602 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual

1.6. 2n4402_2n4403.pdf Size:63K _central

2N4403
2N4403

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.7. 2n4403.pdf Size:233K _mcc

2N4403
2N4403

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2N4403 Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Through Hole Package • Capable of 600mWatts of Power Dissipation PNP General • Epoxy meets UL 94 V-0 flammability rating Purpose Amplifier • Moisure Sensitivity Level 1 • Marking:Type number • Lead Free Finish/RoHS Com

1.8. 2n4403-d.pdf Size:118K _onsemi

2N4403
2N4403

2N4403 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb-Free Packages are Available* COLLECTOR 3 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO 40 Vdc 1 EMITTER Collector - Base Voltage VCBO 40 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ T

1.9. 2n4403.pdf Size:140K _utc

2N4403
2N4403

UNISONIC TECHNOLOGIES CO., LTD 2N4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: 2N4403L ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2N4403-T92-B

1.10. 2n4403.pdf Size:725K _secos

2N4403
2N4403

2N4403 PNP Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 FEATURES Power Dissipation o C MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Value Units Parameter Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage

1.11. 2n4403.pdf Size:268K _lge

2N4403
2N4403

2N4403(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PC Collector Power dissipation 0.625 W TJ

1.12. 2n4403.pdf Size:311K _wietron

2N4403
2N4403

2N4403 General Purpose Transistors TO-92 PNP Silicon COLLECTOR 3 2 BASE 1 1. EMITTER 2 3 1 2. BASE EMITTER 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N4403 Unit Collector-Emitter Voltage V CEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -600 mAdc Total Device Dissipation T =25 C PD 625 mW A Junct

1.13. h2n4403.pdf Size:53K _hsmc

2N4403
2N4403

Spec. No. : HE6221 HI-SINCERITY Issued Date : 1992.09.30 Revised Date : 2004.08.13 MICROELECTRONICS CORP. Page No. : 1/5 H2N4403 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N4403 is designed for general purpose switching and amplifier applications. Features TO-92 • Complementary to H2N4401 • High Power Dissipation: 625mW at 25°C • High DC Current Gain: 100-300 at 150mA

1.14. 2n4403a3.pdf Size:295K _cystek

2N4403
2N4403

Spec. No. : C305A3 Issued Date : 2003.06.13 CYStech Electronics Corp. Revised Date : 2014.05.12 Page No. : 1/8 General Purpose PNP Epitaxial Planar Transistor 2N4403A3 Description • The 2N4403A3 is designed for using in driver stage of AF amplifier and general purpose amplification. • Large IC , IC Max .= -0.6A • Low VCE(sat), typically -0.2V at IC/IB = -300mA / -30mA.

1.15. 2n4403.pdf Size:327K _first_silicon

2N4403
2N4403

SEMICONDUCTOR 2N4403 TECHNICAL DATA General Purpose Transistors PNP Silicon ORDERING INFORMATION 3 Device Marking Shipping 2 2N4403LT1G 2T 3000/Tape & Reel 1 SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO – 40 Vdc 3 Collector–Base Voltage V CBO – 40 Vdc COLLECTOR Emitter–Base Voltage V EBO – 5.0 Vdc Collector Current — Cont

See also transistors datasheet: 2N4399 , 2N439A , 2N43A , 2N44 , 2N440 , 2N4400 , 2N4401 , 2N4402 , BC148 , 2N4404 , 2N4405 , 2N4406 , 2N4407 , 2N4409 , 2N440A , 2N441 , 2N4410 .

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