All Transistors. 2N4404 Datasheet

 

2N4404 Transistor. Datasheet pdf. Equivalent

Type Designator: 2N4404

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 1.2 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 135 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO39

2N4404 Transistor Equivalent Substitute - Cross-Reference Search

2N4404 说明书

1.1. 2n4404_2n4405.pdf Size:100K _central

2N4404
2N4404

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

5.1. 2n4402_2n4403.pdf Size:297K _motorola

2N4404
2N4404

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4402/D General Purpose Transistors 2N4402 PNP Silicon * 2N4403 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 2904, STYLE 1 Rating Symbol Value Unit TO92 (TO226AA) CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 40 Vdc EmitterBase Voltage VEBO 5.0 Vdc C

5.2. 2n4400_2n4401.pdf Size:303K _motorola

2N4404
2N4404

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4400/D General Purpose Transistors 2N4400 NPN Silicon * 2N4401 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 2904, STYLE 1 Rating Symbol Value Unit TO92 (TO226AA) CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 60 Vdc EmitterBase Voltage VEBO 6.0 Vdc C

5.3. 2n4403_3.pdf Size:52K _philips

2N4404
2N4404

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4403 PNP switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 May 05 Philips Semiconductors Product specification PNP switching transistor 2N4403 FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter Industrial and c

5.4. 2n4401_3.pdf Size:52K _philips

2N4404
2N4404

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4401 NPN switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 May 07 Philips Semiconductors Product specification NPN switching transistor 2N4401 FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter Industrial and c

5.5. 2n4401_mmbt4401.pdf Size:92K _fairchild_semi

2N4404
2N4404

2N4401 MMBT4401 C E C TO-92 B SOT-23 B E Mark: 2X NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V I

5.6. 2n4403_mmbt4403.pdf Size:69K _fairchild_semi

2N4404
2N4404

2N4403 MMBT4403 C E C TO-92 B SOT-23 B E Mark: 2T PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage40V VEBO Emitter-Base Voltage 5.0 V I

5.7. 2n4402.pdf Size:67K _fairchild_semi

2N4404
2N4404

2N4402 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Collector-Base Voltage 40 V CBO VEBO Emitter-Base Voltage5.0V ICCollector Current - Continuous60

5.8. 2n4400_mmbt4400.pdf Size:67K _fairchild_semi

2N4404
2N4404

2N4400 MMBT4400 C E C TO-92 B B E SOT-23 Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V

5.9. 2n4402-2n4403.pdf Size:54K _samsung

2N4404
2N4404

2N4402/4403 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 Collector-Emitter Voltage: VCEO= 40V Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Dissipation PC 625

5.10. 2n4400-2n4401.pdf Size:48K _samsung

2N4404
2N4404

2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 Collector-Emitter Voltage: VCEO= 40V Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Dissipation PC 625 mW

5.11. umt4403_sst4403_mmst4403_2n4403.pdf Size:51K _rohm

2N4404
2N4404

Transistors UMT4403 / SST4403 / MMST4403 / 2N4403 (SPEC-A31) 602 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual

5.12. umt4401_sst4401_mmst4401_2n4401.pdf Size:91K _rohm

2N4404
2N4404

UMT4401 / SST4401 / MMST4401 / 2N4401 Transistors NPN Medium Power Transistor (Switching) UMT4401 / SST4401 / MMST4401 / 2N4401 External dimensions (Units : mm) Features 2.00.2 UMT4401 1.30.1 0.90.1 1) BVCEO>40V (IC=1mA) 0.65 0.65 0.2 0.70.1 (1) (2) 2) Complements the UMT4403 / SST4403 / MMST4403 0~0.1 / PN4403. (3) (1) Emitter (2) Base 0.3+0.1 0.150.05 ROHM : UMT3 -0

5.13. 2n4402_2n4403.pdf Size:63K _central

2N4404
2N4404

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.14. 2n4407_2n4406.pdf Size:81K _central

2N4404
2N4404

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.15. 2n4400_2n4401.pdf Size:63K _central

2N4404
2N4404

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.16. 2n4401.pdf Size:212K _mcc

2N4404
2N4404

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2N4401 Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 600mWatts of Power Dissipation Purpose Amplifier Through Hole Package Epoxy meets UL 94 V-0

5.17. 2n4403.pdf Size:233K _mcc

2N4404
2N4404

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2N4403 Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Through Hole Package Capable of 600mWatts of Power Dissipation PNP General Epoxy meets UL 94 V-0 flammability rating Purpose Amplifier Moisure Sensitivity Level 1 Marking:Type number Lead Free Finish/RoHS Com

5.18. 2n4403-d.pdf Size:118K _onsemi

2N4404
2N4404

2N4403 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO 40 Vdc 1 EMITTER Collector - Base Voltage VCBO 40 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ T

5.19. 2n4401-d.pdf Size:195K _onsemi

2N4404
2N4404

2N4401 General Purpose Transistors NPN Silicon http://onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO 40 Vdc 1 Collector - Base Voltage VCBO 60 Vdc EMITTER Emitter - Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipation PD @ TA = 25C 625 mW

5.20. 2n4401.pdf Size:207K _utc

2N4404
2N4404

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: 2N4401L Halogen-free:2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 2N4401-T92-B

5.21. 2n4403.pdf Size:140K _utc

2N4404
2N4404

UNISONIC TECHNOLOGIES CO., LTD 2N4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: 2N4403L ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2N4403-T92-B

5.22. 2n4401.pdf Size:274K _auk

2N4404
2N4404

2N4401 NPN Silicon Transistor Descriptions PIN Connection • General purpose application • Switching application C Features B • Low Leakage current • Low collector saturation voltage enabling E low voltage operation • Complementary pair with 2N4403 TO-92 Ordering Information Type NO. Marking Package Code 2N4401 2N4401 TO-92 Absolute maximum ratings Ta=2

5.23. 2n4401.pdf Size:320K _secos

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2N4404

2N4401 NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 Features Power Dissipation o MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol Value Units Parameter Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage V

5.24. 2n4400.pdf Size:104K _secos

2N4404
2N4404

2N4400 0.6 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ? General Purpose Amplifier Transistor TO-92 ? Emitter G H ? Base ? Collector J A D Millimeter Collector REF. Min. Max. B ?? A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 ?? E 0.36 0.56 F 0.36 0.51

5.25. 2n4402.pdf Size:104K _secos

2N4404
2N4404

2N4402 -0.6 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 ? General Purpose Amplifier Transistor G H ? Emitter ? Base ? Collector J A D Collector Millimeter B REF. Min. Max. ?? A 4.40 4.70 K B 4.30 4.70 C 12.70 - D 3.30 3.81 ?? E 0.36 0.56 Base E C

5.26. 2n4403.pdf Size:725K _secos

2N4404
2N4404

2N4403 PNP Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 FEATURES Power Dissipation o C MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Value Units Parameter Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage

5.27. 2n4402_3.pdf Size:355K _cdil

2N4404
2N4404

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N4402 / 2N4403 PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" C B E General Purpose Switching And Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL VALUE UNITS Collector Emitter

5.28. 2n4400_01.pdf Size:353K _cdil

2N4404
2N4404

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N4400 / 2N4401 NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" C B E General Purpose Switching And Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL VALUE UNITS Collector Emitter

5.29. 2n4401.pdf Size:398K _lge

2N4404
2N4404

2N4401(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Value Units Parameter Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V VEBO Emitter-Base Voltage 6 V Collector Current -Continuous IC 600 mA Collector Power dissipation PC 0.625 W TJ

5.30. 2n4403.pdf Size:268K _lge

2N4404
2N4404

2N4403(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PC Collector Power dissipation 0.625 W TJ

5.31. 2n4401.pdf Size:1006K _wietron

2N4404
2N4404

2N4401 General Purpose Transistors NPN Silicon TO-92 FEATURES 1 1. EMITTER 2 Power dissipation 3 2. BASE PCM : 0.625 W (Tamb=25?) 3. COLLECTOR Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range TJ,Tstg: -55? to +150? ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Sym

5.32. 2n4403.pdf Size:311K _wietron

2N4404
2N4404

2N4403 General Purpose Transistors TO-92 PNP Silicon COLLECTOR 3 2 BASE 1 1. EMITTER 2 3 1 2. BASE EMITTER 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N4403 Unit Collector-Emitter Voltage V CEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -600 mAdc Total Device Dissipation T =25 C PD 625 mW A Junct

5.33. h2n4403.pdf Size:53K _hsmc

2N4404
2N4404

Spec. No. : HE6221 HI-SINCERITY Issued Date : 1992.09.30 Revised Date : 2004.08.13 MICROELECTRONICS CORP. Page No. : 1/5 H2N4403 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N4403 is designed for general purpose switching and amplifier applications. Features TO-92 • Complementary to H2N4401 • High Power Dissipation: 625mW at 25°C • High DC Current Gain: 100-300 at 150mA

5.34. h2n4401.pdf Size:53K _hsmc

2N4404
2N4404

Spec. No. : HE6215 HI-SINCERITY Issued Date : 1992.09.22 Revised Date : 2002.02.22 MICROELECTRONICS CORP. Page No. : 1/5 H2N4401 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N4401 is designed for general purpose switching and amplifier applications. Features TO-92 • Complementary to H2N4403 • High Power Dissipation: 625 mW at 25°C • High DC Current Gain: 100-300 at 150mA

5.35. 2n4401a3.pdf Size:263K _cystek

2N4404
2N4404

Spec. No. : C203A3 Issued Date : 2003.06.06 CYStech Electronics Corp. Revised Date : 2011.12.28 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor 2N4401A3 Description • The 2N4401A3 is designed for using in driver stage of AF amplifier and general purpose switching application. • High current , I = 0.6A C • Low V , V = 0.2V(typ.) at I /I = 500mA/50mA C

5.36. 2n4403a3.pdf Size:295K _cystek

2N4404
2N4404

Spec. No. : C305A3 Issued Date : 2003.06.13 CYStech Electronics Corp. Revised Date : 2014.05.12 Page No. : 1/8 General Purpose PNP Epitaxial Planar Transistor 2N4403A3 Description • The 2N4403A3 is designed for using in driver stage of AF amplifier and general purpose amplification. • Large IC , IC Max .= -0.6A • Low VCE(sat), typically -0.2V at IC/IB = -300mA / -30mA.

5.37. 2n4401.pdf Size:317K _first_silicon

2N4404
2N4404

SEMICONDUCTOR 2N4401 TECHNICAL DATA General Purpose Transistor ORDERING INFORMATION Device Marking Shipping 3 2N4401 2X 3000/Tape & Reel 2 1 MAXIMUM RATINGS SOT–23 Rating Symbol Value Unit Collector–Emitter Voltage V 40 Vdc CEO Collector–Base Voltage V 60 Vdc CBO Emitter–Base Voltage V 6.0 Vdc EBO 3 COLLECTOR Collector Current — Continuous I 600 mAdc C 1 BASE

5.38. 2n4403.pdf Size:327K _first_silicon

2N4404
2N4404

SEMICONDUCTOR 2N4403 TECHNICAL DATA General Purpose Transistors PNP Silicon ORDERING INFORMATION 3 Device Marking Shipping 2 2N4403LT1G 2T 3000/Tape & Reel 1 SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO – 40 Vdc 3 Collector–Base Voltage V CBO – 40 Vdc COLLECTOR Emitter–Base Voltage V EBO – 5.0 Vdc Collector Current — Cont

5.39. 2n4401.pdf Size:1500K _kexin

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2N4404

SMD Type Transistors NPN Transistors 2N4401 TO-92 Unit: mm +0.25 4.58 –0.15 ■ Features ●Collector Current Capability IC=0.6A ●Collector Emitter Voltage VCEO=40V 0.46 0.10 +0.10 1.27TYP 1.27TYP 0.38 –0.05 1 2 3 [1.27 0.20] [1.27 0.20] 3.60 0.20 1. Emitter 2. Base (R2.29) 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector

Datasheet: 2N439A , 2N43A , 2N44 , 2N440 , 2N4400 , 2N4401 , 2N4402 , 2N4403 , TIP122 , 2N4405 , 2N4406 , 2N4407 , 2N4409 , 2N440A , 2N441 , 2N4410 , 2N4411 .

 


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