MMBT4146 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MMBT4146

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 125

Transition frequency (ft), MHz: 250

Collector capacitance (Cc), pF: 8

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of MMBT4146 transistor: TO236

MMBT4146 Equivalent Transistors - Cross-Reference Search

MMBT4146 PDF document for downloads:

4.1. 2n4126_mmbt4126.pdf Size:81K _fairchild_semi

2N4126 MMBT4126 C E C TO-92 B B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch- ing applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 25 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 200 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA= 2

4.2. 2n4124_mmbt4124.pdf Size:95K _fairchild_semi

2N4124 MMBT4124 C E TO-92 C B B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N4124 *MMBT4124 PD

4.3. mmbt4126.pdf Size:112K _diodes

MMBT4126 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • Epitaxial Planar Die Construction A SOT-23 • Complementary NPN Type Available (MMBT4124) C Dim Min Max • Ideal for Low Power Amplification and Switching A 0.37 0.51 B C • Lead, Halogen and Antimony Free, RoHS Compliant B 1.20 1.40 "Green" Device (Notes 2 and 4) TOP VIEW B E C 2.30 2.50 D E Mechanical Data G D 0.89 1.03 H • Case: SOT-23 E 0.45 0.60 • Case Material: Molded Plastic. UL Flammability K M G 1.78 2.05 Classification Rating 94V-0 J H 2.80 3.00 • Moisture Sensitivity: Level 1 per J-STD-020C L • Terminal Connections: See Diagram J 0.013 0.10 C • Terminals: Solderable per MIL-STD-202, Method 208 K 0.903 1.10 • Lead Free Plating (Matte Tin Finish annealed over Alloy L 0.45 0.61 42 leadframe). M 0.085 0.180 • Marking (See Page 3): K2B • Ordering & Date Code Information: See Page 3 B E ? 0

4.4. mmbt4124.pdf Size:73K _diodes

MMBT4124 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • Epitaxial Planar Die Construction • Case: SOT-23 • Complementary PNP Type Available (MMBT4126) • Case Material: Molded Plastic, “Green” Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 • Ideal for Medium Power Amplification and Switching • Moisture Sensitivity: Level 1 per J-STD-020D • Lead, Halogen and Antimony Free, RoHS Compliant • Terminal Connections: See Diagram • "Green" Device (Notes 2 and 4) • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.008 grams (approximate) C B E Top View Device Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 30 V Collector-Emitter

4.5. mmbt4126lt1.pdf Size:154K _onsemi

MMBT4126LT1G General Purpose Transistor PNP Silicon Features http://onsemi.com • Moisture Sensitivity Level: 1 • ESD Rating: - Human Body Model: > 4000 V - Machine Model: > 400 V COLLECTOR 3 • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO -25 Vdc Collector-Base Voltage VCBO -25 Vdc 3 Emitter-Base Voltage VEBO -4 Vdc Collector Current-Continuous IC -200 mAdc 1 2 THERMAL CHARACTERISTICS SOT-23 Characteristic Symbol Max Unit CASE 318 Total Device Dissipation FR-5 Board PD STYLE 6 (Note 1) @TA = 25°C 225 mW Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction-to-Ambient RqJA 556 °C/W MARKING DIAGRAM (Note 1) Total Device Dissipation Alumina PD Substrate, (Note 2) @TA = 25°C 300 mW Derate above 25°C 2.4 mW/°C C3 M G G Thermal Resistance, Junction-to-Ambient RqJA 417 °C/W (Note 2) Junction and Storage Temperature Range TJ, Tstg -55 to

4.6. mmbt4124lt1.pdf Size:144K _onsemi

MMBT4124LT1G General Purpose Transistor NPN Silicon Features http://onsemi.com • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc 2 Emitter-Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 200 mAdc THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit Total Device Dissipation PD 1 FR-5 Board (Note 1) @TA = 25°C 225 W 2 Derate above 25°C 1.8 mW/°C SOT-23 (TO-236) Thermal Resistance, Junction-to-Ambient RqJA 556 °C/W CASE 318 STYLE 6 Total Device Dissipation Alumina PD Substrate (Note 2) @TA = 25°C 300 W Derate above 25°C 2.4 mW/°C MARKING DIAGRAM Thermal Resistance, Junction-to-Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg -55 to +150 °C ZC M G Stresses exceeding Maximum Ratings may damage the device. Maximum G Ratings are stress ratings only. Functional op

See also transistors datasheet: MMBT4123 , MMBT4124 , MMBT4125 , MMBT4126 , MMBT4140 , MMBT4141 , MMBT4142 , MMBT4143 , 8050 , MMBT4248 , MMBT4249 , MMBT4250 , MMBT4250A , MMBT4258 , MMBT4258A , MMBT4274 , MMBT4275 .

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