MMBT918 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MMBT918

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 15

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.05

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 600

Collector capacitance (Cc), pF: 1.7

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of MMBT918 transistor: TO236

MMBT918 Equivalent Transistors - Cross-Reference Search

MMBT918 PDF document for downloads:

1.1. mmbt918l.pdf Size:97K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT918LT1/D VHF/UHF Transistor MMBT918LT1 NPN Silicon COLLECTOR 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board,(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKING MMBT918LT1 = M3B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown

1.2. pn918_mmbt918.pdf Size:748K _fairchild_semi

1.3. mmbt918lt1-d.pdf Size:113K _onsemi

MMBT918LT1G VHF/UHF Transistor NPN Silicon Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 30 Vdc 2 EMITTER Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit 1 2 Total Device Dissipation FR- 5 Board, PD (Note 1) TA = 25°C 225 mW SOT-23 (TO-236) Derate above 25°C 1.8 mW/°C CASE 318 Thermal Resistance, Junction-to-Ambient RqJA 556 °C/W STYLE 6 Total Device Dissipation Alumina PD Substrate, (Note 2) TA = 25°C 300 mW Derate above 25°C 2.4 mW/°C MARKING DIAGRAM Thermal Resistance, Junction-to-Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg -55 to +150 °C M3B M G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation

See also transistors datasheet: MMBT6427LT1 , MMBT6428 , MMBT6429 , MMBT6517 , MMBT6520 , MMBT6543 , MMBT8598 , MMBT8599 , 2N3906 , MMBT918R , MMBT930 , MMBT930R , MMBTA05 , MMBTA05LT1 , MMBTA06 , MMBTA06LT1 , MMBTA12 .

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