MMBTA28 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MMBTA28

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.35

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 12

Maximum collector current |Ic max|, A: 0.8

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 125

Collector capacitance (Cc), pF: 8

Forward current transfer ratio (hFE), min: 10000

Noise Figure, dB: -

Package of MMBTA28 transistor: SOT23

MMBTA28 Equivalent Transistors - Cross-Reference Search

MMBTA28 PDF document for downloads:

1.1. mmbta28.pdf Size:870K _fairchild_semi

MPSA28 MMBTA28 PZTA28 C C E E C B TO-92 C B SuperSOT-3 B SOT-223 E Mark: 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 800 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units MPSA28 *MM

1.2. mmbta28.pdf Size:356K _htsemi

MMBTA28 TRANSISTOR(NPN) FEATURES SOT–23 ? High Current Gain MARKING: 3SS MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 80 V CBO 2. EMITTER V Collector-Emitter Voltage 80 V CEO 3. COLLECTOR V Emitter-Base Voltage 12 V EBO IC Collector Current 500 mA PC Collector Power Dissipation 200 mW R Thermal Resistance From Junction To Ambient 625 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100µA, I =0 80 V (BR)CBO C E Collector-emitter sustain voltage V (sus) I =100µA, V =0 80 V CEO C BE Emitter-base breakdown voltage V I =10µA, I =0 12 V (BR)EBO E C Collector cut-off current I V =60V, I =0 0.1 µA CBO CB E Collector cut-off current ICES VCE=60V, VBE=0 0.5 µA Emitter cut-off current I V =10V

4.1. mmbta20l.pdf Size:413K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA20LT1/D General Purpose Amplifier MMBTA20LT1 NPN Silicon COLLECTOR 3 1 3 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 MAXIMUM RATINGS SOT–23 (TO–236AB) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKING MMBTA20LT1 = 1C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO 40 — Vdc (IC =

4.2. mmbta20lt1.pdf Size:107K _onsemi

MMBTA20LT1 General Purpose Amplifier NPN Silicon Features • Pb-Free Package is Available http://onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc 1 BASE Emitter-Base Voltage VEBO 4.0 Vdc Collector Current - Continuous IC 100 mAdc 2 THERMAL CHARACTERISTICS EMITTER Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board, PD (Note 1) TA = 25°C 225 mW 3 Derate above 25°C 1.8 mW/°C 1 Thermal Resistance, RqJA 556 °C/W 2 Junction-to-Ambient Total Device Dissipation Alumina PD Substrate, (Note 2) TA = 25°C 300 mW SOT-23 (TO-236) Derate above 25°C 2.4 mW/°C CASE 318 Thermal Resistance, Junction-to-Ambient RqJA 417 °C/W STYLE 6 Junction and Storage Temperature TJ, Tstg -55 to +150 °C Maximum ratings are those values beyond which device damage can occur. MARKING DIAGRAM Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simult

See also transistors datasheet: MMBTA06LT1 , MMBTA12 , MMBTA13 , MMBTA13LT1 , MMBTA14 , MMBTA14LT1 , MMBTA20 , MMBTA20LT1 , KD503 , MMBTA42 , MMBTA42LT1 , MMBTA43 , MMBTA43LT1 , MMBTA55 , MMBTA55LT1 , MMBTA56 , MMBTA56LT1 .

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