2N4413A Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N4413A

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.4

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.6

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 20

Collector capacitance (Cc), pF: 10

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N4413A transistor: TO18

2N4413A Equivalent Transistors - Cross-Reference Search

2N4413A PDF document for downloads:

5.1. 2n441.pdf Size:624K _rca

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5.2. 2n4410re.pdf Size:183K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4410/D Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 Rating Symbol Value Unit TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 120 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 250 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) V(BR)CEO 80 — Vdc (IC = 1.0 mAdc, IB = 0) Col

5.3. 2n4410.pdf Size:294K _fairchild_semi

Discrete POWER & Signal Technologies 2N4410 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V V Collector-Base Voltage 120 V CBO VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units

5.4. 2n4416_2n4416a_sst4416.pdf Size:81K _vishay

2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N4416 -v6 -30 4.5 5 2N4416A -2.5 to -6 -35 4.5 5 SST4416 -v6 -30 4.5 5 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mixer 2N4416/A, Gps 13 dB (typ) @ D Very High System Sensitivity D Oscillator 400 MHz D High Quality of Amplification D Sample-and-Hold D Very Low Noise: 3 dB (typ) @ D High-Speed Switching Capability D Very Low Capacitance Switches 400 MHz D High Low-Level Signal Amplification D Very Low Distortion D High AC/DC Switch Off-Isolation DESCRIPTION The 2N4416/2N4416A/SST4416 n-channel JFETs are The TO-206AF (TO-72) hermetically-sealed package is designed to provide high-performance amplification at high available with full military processing (see Military frequencies. Information.) The TO-236 (SOT-23) package provides a low-cost option and is ava

5.5. 2n4416-a.pdf Size:82K _central

TM 2N4416 Central 2N4416A Semiconductor Corp. N-CHANNEL JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A are silicon N-Channel Junction Field Effect Transistors designed for VHF amplifier and mixer applications. MARKING CODE: Full Part Nmber JEDEC TO-72 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N4416 2N4416A UNITS Gate-Drain Voltage VGD 30 35 V Gate-Source Voltage VGS 30 35 V Drain-Source Voltage VDS 30 35 V Gate Current IG 10 10 mA Power Dissipation PD 300 300 mW Operating and Storage Junction Temperature TJ,Tstg -65 to +200 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N4416 2N4416A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS IGSS VGS=20V, VDS=0V - 0.1 -- 0.1 nA IGSS VGS=20V, VDS=0V, TA=150°C - 0.1 0.1 µA IDSS VDS=15V, VGS=0V 5.0 15 5.0 15 mA BVGSS VDS=0V, IG=1.0µA 30 - 35 - V VGS(OFF) VDS=15V, ID=1.0nA - 6.0 2.5 6.0 V gfs VDS=15V, VGS=0V, f=1.0KHz 4,500 7,500 4,500 7,500 umho gos VDS=15V, VGS=0V, f=1.0KHz - 50 - 50 umho

5.6. 2n4416-a_pn4416.pdf Size:23K _calogic

N-Channel JFET High Frequency Amplifier CORPORATION 2N4416 / 2N4416A / PN4416 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A • Low Noise • • Low Feedback Capacitance Gate-Source or Gate-Drain Voltage • • Low Output Capacitance 2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V • • High Transconductance 2N4416A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -35V • • High Power Gain Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA • Storage Temperature Range 2N4416/2N4416A . . . . . . . . . . . . . . . . . . . -65oC to +200oC PIN CONFIGURATION PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC +150oC Operating Temperature Range 2N4416/2N4416A . . . . . . . . . . . . . . . . . . . -65oC to +200oC PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +135oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +3

See also transistors datasheet: 2N4409 , 2N440A , 2N441 , 2N4410 , 2N4411 , 2N4412 , 2N4412A , 2N4413 , 2N5551 , 2N4414 , 2N4414A , 2N4415 , 2N4415A , 2N4418 , 2N4419 , 2N442 , 2N4420 .

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