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MMBTA55 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MMBTA55

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.33

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of MMBTA55 transistor: TO236

MMBTA55 Equivalent Transistors - Cross-Reference Search

MMBTA55 PDF doc:

1.1. mmbta55l_mmbta56.pdf Size:77K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA55LT1/D Driver Transistors MMBTA55LT1 COLLECTOR PNP Silicon 3 MMBTA56LT1* *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol MMBTA55 MMBTA56 Unit 1 Collector–Emitter Voltage VCEO –60 –80 Vdc 2 Collector–Base Voltage VCBO –60 –80 Vdc Emitter–Base Voltage VEBO –4.0 Vdc CASE 318–08, STYLE 6 Collector Current — Continuous IC –500 mAdc SOT–23 (TO–236AB) DEVICE MARKING MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board,(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Char

1.2. mpsa55_mmbta55_pzta55.pdf Size:2028K _fairchild_semi

MPSA55 MMBTA55 PZTA55 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark: 2H PNP General Purpose Amplifier Absolute Maximum Ratings* Symbol Parameter Value Units VCES Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 500 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg °C * NOTES 1) 2) Thermal Characteristics Symbol Characteristic Ma

1.3. mmbta55_mmbta56.pdf Size:102K _diodes

MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • Epitaxial Planar Die Construction A SOT-23 • Complementary NPN Types Available (MMBTA05 / C Dim Min Max MMBTA06) A 0.37 0.51 • Ideal for Low Power Amplification and Switching B C B 1.20 1.40 • Lead, Halogen and Antimony Free, RoHS Compliant TOP VIEW B E "Green" Device (Notes 3 and 4) C 2.30 2.50 D • Qualified to AEC-Q101 Standards for High Reliability E G D 0.89 1.03 H Mechanical Data E 0.45 0.60 K G 1.78 2.05 • Case: SOT-23 M H 2.80 3.00 • Case Material: Molded Plastic. UL Flammability J L Classification Rating 94V-0 J 0.013 0.10 • Moisture Sensitivity: Level 1 per J-STD-020d K 0.903 1.10 • Terminal Connections: See Diagram C L 0.45 0.61 • Terminals: Solderable per MIL-STD-202, Method 208 M 0.085 0.180 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). ? 0° 8° • M

1.4. mmbta55_mmbta56_sot-23.pdf Size:220K _mcc

MCC MMBTA55 TM Micro Commercial Components 20736 Marilla Street Chatsworth THRU Micro Commercial Components CA 91311 Phone: (818) 701-4933 MMBTA56 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP General • This device is designed for general purpose amplifier applications at collector current to 300mA Purpose Amplifier • Markin : MMBTA55=2H/B55, MMBTA56=2GM/B56 • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Maximum Ratings SOT-23 Symbol Rating Rating Unit A V Collector-Emitter Voltage CEO D C MMBTA55 60 V MMBTA56 80 VCBO Collector-Base Voltage B C MMBTA55 60 V MMBTA56 80 B E VEBO Emitter-Base Voltage 4.0 V F E IC Collector Current, Continuous 500 mA O TJ Operating Junction Temperature -55 to +150 C O T Storage Temperature -55 to +150 C STG G H J Thermal Characteristics Symbol Rating Max Unit K PD Total Device Dissipation* 225

1.5. mmbta55lt1_mmbta56lt1.pdf Size:103K _onsemi

MMBTA55LT1G, MMBTA56LT1G Driver Transistors PNP Silicon http://onsemi.com Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc MMBTA55 -60 3 MMBTA56 -80 Collector-Base Voltage VCBO Vdc MMBTA55 -60 1 MMBTA56 -80 2 Emitter-Base Voltage VEBO -4.0 Vdc SOT-23 CASE 318 Collector Current - Continuous IC -500 mAdc STYLE 6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Total Device Dissipation FR- 5 Board PD (Note 1) TA = 25°C 225 mW Derate above 25°C 1.8 mW/°C 2xx M G Thermal Resistance, Junction-to-Ambient RqJA 556 °C/W G Total Device Dissipation Alumina PD 1 Substrate, (Note 2) TA = 25°C 300 mW Derate above 25°C 2.4 mW/°C 2xx = Device Code x = H for MMBTA55LT1 Thermal Resistance, Junction-to-Ambient RqJA 417 °C/W xx = GM for MMBTA56LT1 Junction and Storage Temperature TJ, Tstg -55 to +150 °C

1.6. mmbta55-mmbta56.pdf Size:279K _secos

MMBTA55 / MMBTA56 PNP Silicon Elektronische Bauelemente Driver Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 SOT-23 3 Dim Min Max 1 A A 2.800 3.040 L 2 B 1.200 1.400 3 C 0.890 1.110 S COLLECTOR Top View B D 0.370 0.500 1 2 3 G 1.780 2.040 V G H 0.013 0.100 1 J 0.085 0.177 BASE C K 0.450 0.600 L 0.890 1.020 2 H J D E MITTE R K S 2.100 2.500 V 0.450 0.600 All Dimension in mm MAXIMUM RATINGS RATING SYMBOL VALUE UNIT MMBTA55 -60 Collector - Emitter Voltage VCEO V MMBTA56 -80 MMBTA55 -60 Collector - Base Voltage VCBO V MMBTA56 -80 Emitter - Base Voltage VEBO -4.0 V Collector Current - Continuous IC -500 mA Marking Code: MMBTA55:2H , MMBTA56:2GM THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL MAX. UNIT Total Device Dissipation FR-5 Board(1) TA = 25 225 mW PD Derate Above 25 1.8 mW / Thermal Resistance, Junction to Ambient R JA 556 / W Total Device Dissipation Alumina Substrate(2), TA

1.7. mmbta55.pdf Size:35K _kec

SEMICONDUCTOR MMBTA55 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY AMPLIFIER APPLICATIONS. FEATURES E L B L Complementary to MMBTA05. DIM MILLIMETERS Driver Stage Application of 20 to 25 Watts Amplifiers. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00 ~ 0.10 CHARACTERISTIC SYMBOL RATING UNIT L 0.55 P P M 0.20 MIN VCBO Collector-Base Voltage -60 V N 1.00+0.20/-0.10 P 7 VCEO Collector-Emitter Voltage -60 V M VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA 1. EMITTER 2. BASE IE Emitter Current 500 mA 3. COLLECTOR PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 SOT-23 Tstg -55 150 Storage Temperature * : Package Mounted On 99.5% Alumina 10 8 0.6mm. Marking Lot No. Type Name AMX ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-6

1.8. mmbta55.pdf Size:767K _htsemi

MMBTA55 TRANSISTOR(PNP) SOT–23 FEATURES ? Driver Transistors MARKING:2H 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -60 V CEO VEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA P Collector Power Dissipation 225 mW C R Thermal Resistance From Junction To Ambient 556 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-100µA, I =0 -60 V (BR)CBO C E Collector-emitter breakdown voltage V I =-1mA, I =0 -60 V (BR)CEO C B Emitter-base breakdown voltage V I =-100µA, I =0 -4 V (BR)EBO E C Collector cut-off current I V =-60V, I =0 -0.1 µA CBO CB E Collector cut-off current I V =-60V, I =0 -0.1 µA CEO CE B h V =-1V, I =-10m

1.9. mmbta55-56.pdf Size:407K _wietron

MMBTA55 MMBTA56 Driver PNP 3 1 2 SOT-23 MMBTA55 MMBTA56 -60 V -80 CEO -60 -80 -4.0 -4.0 -5 MMBTA55=2H, MMBTA56=2GM (3) - -60 MMBTA55 MMBTA56 -80 - 0 MMBTA55 -60 MMBTA56 -80 - 0 -4.0 u -0.1 I =0) S B -0.1 -6 MMBTA55 u -0.1 -8 MMBTA56 _ _ < < 3.Pulse Test:Pulse Width 300us, Duty Cycle 2.0% 4. f is defined as the freguency at which hfeextrapolates to unity T WEITRON http://www.weitron.com.tw MMBTA55 MMBTA56 ELECTRICAL CHARACTERISTICS A= 25 C unles s otherwis e noted) (T C harac teris tic S ymbol Min Max Unit ON CHARACTERISTICS DC C urrent G ain hF E -100 - (IC = -10 mAdc, VC E = -1.0 V dc) - (IC = -100 mAdc, VC E = -1.0 V dc) -100 - - C ollector- E mitter S aturation Voltage V - C E (s at) -0.25 V dc (IC = -100 mAdc, IB = -10 mAdc) B as e- E mitter On Voltage V - B E (on) V dc -1.2 (IC = -100 mAdc, VC E = -1.0 V dc) SMALL- SIGNAL CHARACTERISTICS C urrent- G ain - B andwidth P roduct (4) fT - MHz 50 (IC = -100 mA, VC E =

See also transistors datasheet: MMBTA14LT1 , MMBTA20 , MMBTA20LT1 , MMBTA28 , MMBTA42 , MMBTA42LT1 , MMBTA43 , MMBTA43LT1 , 2N3053 , MMBTA55LT1 , MMBTA56 , MMBTA56LT1 , MMBTA63 , MMBTA63LT1 , MMBTA64 , MMBTA64LT1 , MMBTA70 .

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