MMBTA56LT1 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MMBTA56LT1

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.35

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of MMBTA56LT1 transistor: SOT23

MMBTA56LT1 Equivalent Transistors - Cross-Reference Search

MMBTA56LT1 PDF document for downloads:

1.1. mmbta55lt1_mmbta56lt1.pdf Size:103K _onsemi

MMBTA55LT1G, MMBTA56LT1G Driver Transistors PNP Silicon http://onsemi.com Features � These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc MMBTA55 -60 3 MMBTA56 -80 Collector-Base Voltage VCBO Vdc MMBTA55 -60 1 MMBTA56 -80 2 Emitter-Base Voltage VEBO -4.0 Vdc SOT-23 CASE 318 Collector Current - Continuous IC -500 mAdc STYLE 6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Total Device Dissipation FR- 5 Board PD (Note 1) TA = 25�C 225 mW Derate above 25�C 1.8 mW/�C 2xx M G Thermal Resistance, Junction-to-Ambient RqJA 556 �C/W G Total Device Dissipation Alumina PD 1 Substrate, (Note 2) TA = 25�C 300 mW Derate above 25�C 2.4 mW/�C 2xx = Device Code x = H for MMBTA55LT1 Thermal Resistance, Junction-to-Ambient RqJA 417 �C/W xx = GM for MMBTA56LT1 Junction and Storage Temperature TJ, Tstg -55 to +150 �C

3.1. mmbta55l_mmbta56.pdf Size:77K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA55LT1/D Driver Transistors MMBTA55LT1 COLLECTOR PNP Silicon 3 MMBTA56LT1* *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol MMBTA55 MMBTA56 Unit 1 Collector�Emitter Voltage VCEO �60 �80 Vdc 2 Collector�Base Voltage VCBO �60 �80 Vdc Emitter�Base Voltage VEBO �4.0 Vdc CASE 318�08, STYLE 6 Collector Current � Continuous IC �500 mAdc SOT�23 (TO�236AB) DEVICE MARKING MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR�5 Board,(1) PD 225 mW TA = 25�C Derate above 25�C 1.8 mW/�C Thermal Resistance, Junction to Ambient RqJA 556 �C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25�C Derate above 25�C 2.4 mW/�C Thermal Resistance, Junction to Ambient RqJA 417 �C/W Junction and Storage Temperature TJ, Tstg �55 to +150 �C ELECTRICAL CHARACTERISTICS (TA = 25�C unless otherwise noted) Char

3.2. mpsa56_mmbta56_pzta56.pdf Size:1073K _fairchild_semi

February 2006 MPSA56/MMBTA56/PZTA56 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 73 Absolute Maximum Ratings* TA = 25�C unless otherwise specified. Parameter Symbol Value Unit Collector-Emitter Voltage VCES -80 V Collector-Base Voltage VCBO -80 V Emitter-Base Voltage VEBO -4.0 V Collector Current � Continuous IC -500 mA Operating and Storage Junction Temperature Range TJ, TSTG -55 to +150 �C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Notes: 1. These ratings are based on a maximum junction temperature of 150�C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25�C unless otherwise noted. Max Cha

3.3. mmbta55_mmbta56.pdf Size:102K _diodes

MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features � Epitaxial Planar Die Construction A SOT-23 � Complementary NPN Types Available (MMBTA05 / C Dim Min Max MMBTA06) A 0.37 0.51 � Ideal for Low Power Amplification and Switching B C B 1.20 1.40 � Lead, Halogen and Antimony Free, RoHS Compliant TOP VIEW B E "Green" Device (Notes 3 and 4) C 2.30 2.50 D � Qualified to AEC-Q101 Standards for High Reliability E G D 0.89 1.03 H Mechanical Data E 0.45 0.60 K G 1.78 2.05 � Case: SOT-23 M H 2.80 3.00 � Case Material: Molded Plastic. UL Flammability J L Classification Rating 94V-0 J 0.013 0.10 � Moisture Sensitivity: Level 1 per J-STD-020d K 0.903 1.10 � Terminal Connections: See Diagram C L 0.45 0.61 � Terminals: Solderable per MIL-STD-202, Method 208 M 0.085 0.180 � Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). ? 0� 8� � M

3.4. smbta56_mmbta56.pdf Size:75K _infineon

SMBTA56/MMBTA56 PNP Silicon AF Transistor � Low collector-emitter saturation voltage 2 3 � Complementary type: SMBTA06 / MMBTA06(NPN) 1 � Pb-free (RoHS compliant) package1) � Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA56/MMBTA56 s2G SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 80 V Collector-emitter voltage VCEO 80 Collector-base voltage VCBO 4 Emitter-base voltage VEBO 500 mA Collector current IC 1 A Peak collector current ICM 100 mA Base current IB 200 Peak base current IBM 330 mW Total power dissipation- Ptot TS ? 79�C 150 �C Junction temperature Tj Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit K/W Junction - soldering point2) RthJS ? 215 1 Pb-containing package may be available upon special request 2 For calculation of RthJA please refer to Application Note Thermal Resistance 2007-04-19 1 SMBTA56/MMBTA56 Electrical Characteristics at TA = 25�C, unless o

3.5. mmbta55_mmbta56_sot-23.pdf Size:220K _mcc

MCC MMBTA55 TM Micro Commercial Components 20736 Marilla Street Chatsworth THRU Micro Commercial Components CA 91311 Phone: (818) 701-4933 MMBTA56 Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP General � This device is designed for general purpose amplifier applications at collector current to 300mA Purpose Amplifier � Markin : MMBTA55=2H/B55, MMBTA56=2GM/B56 � Epoxy meets UL 94 V-0 flammability rating � Moisure Sensitivity Level 1 Maximum Ratings SOT-23 Symbol Rating Rating Unit A V Collector-Emitter Voltage CEO D C MMBTA55 60 V MMBTA56 80 VCBO Collector-Base Voltage B C MMBTA55 60 V MMBTA56 80 B E VEBO Emitter-Base Voltage 4.0 V F E IC Collector Current, Continuous 500 mA O TJ Operating Junction Temperature -55 to +150 C O T Storage Temperature -55 to +150 C STG G H J Thermal Characteristics Symbol Rating Max Unit K PD Total Device Dissipation* 225

3.6. mmbta56wt1g.pdf Size:132K _onsemi

MMBTA56WT1G Driver Transistor PNP Silicon Features ? Moisture Sensitivity Level: 1 http://onsemi.com ? ESD Rating: Human Body Model -- 4 kV Machine Model -- 400 V COLLECTOR ? These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector -- Emitter Voltage VCEO --80 Vdc Collector -- Base Voltage VCBO --80 Vdc Emitter -- Base Voltage VEBO --4.0 Vdc 3 Collector Current -- Continuous IC --500 mAdc 1 THERMAL CHARACTERISTICS 2 Characteristic Symbol Max Unit Total Device Dissipation FR--5 Board PD 150 mW SC--70 (SOT--323) TA =25?C CASE 419 Thermal Resistance, Junction to Ambient R?JA 833 ?C/W STYLE 3 Junction and Storage Temperature TJ, Tstg -- 55 to +150 ?C Stresses exceeding Maximum Ratings may damage the device. Maximum MARKING DIAGRAM Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses

3.7. mmbta56.pdf Size:68K _secos

MMBTA56 -0.5A , -80V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES General Purpose Amplifier Applications A L 3 3 MARKING Top View C B 1 1 2 2GM 2 K E D PACKAGE INFORMATION H J F G Package MPQ Leader Size SOT-23 3K 7’ inch Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.04 G - 0.18 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 Collector 3 1 Base 2 Emitter MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector - Base Voltage V -80 V CBO Collector - Emitter Voltage V -80 V CEO Emitter - Base Voltage V -4 V EBO Collector Current - Continuous I -500 mA C Collector Power Dissipation P 225 mW C Thermal Resistance From Junction R 555 °C / W ?JA To Ambient Junction, Storage Te

3.8. mmbta55-mmbta56.pdf Size:279K _secos

MMBTA55 / MMBTA56 PNP Silicon Elektronische Bauelemente Driver Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 SOT-23 3 Dim Min Max 1 A A 2.800 3.040 L 2 B 1.200 1.400 3 C 0.890 1.110 S COLLECTOR Top View B D 0.370 0.500 1 2 3 G 1.780 2.040 V G H 0.013 0.100 1 J 0.085 0.177 BASE C K 0.450 0.600 L 0.890 1.020 2 H J D E MITTE R K S 2.100 2.500 V 0.450 0.600 All Dimension in mm MAXIMUM RATINGS RATING SYMBOL VALUE UNIT MMBTA55 -60 Collector - Emitter Voltage VCEO V MMBTA56 -80 MMBTA55 -60 Collector - Base Voltage VCBO V MMBTA56 -80 Emitter - Base Voltage VEBO -4.0 V Collector Current - Continuous IC -500 mA Marking Code: MMBTA55:2H , MMBTA56:2GM THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL MAX. UNIT Total Device Dissipation FR-5 Board(1) TA = 25 225 mW PD Derate Above 25 1.8 mW / Thermal Resistance, Junction to Ambient R JA 556 / W Total Device Dissipation Alumina Substrate(2), TA

3.9. mmbta56.pdf Size:32K _kec

SEMICONDUCTOR MMBTA56 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY AMPLIFIER APPLICATIONS. FEATURE E Complementary to MMBTA06 L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 ~ 0.10 VCBO Collector-Base Voltage -80 V L 0.55 P P M 0.20 MIN VCEO N 1.00+0.20/-0.10 Collector-Emitter Voltage -80 V P 7 VEBO Emitter-Base Voltage -5 V M IC Collector Current -500 mA 1. EMITTER IE Emitter Current 500 mA 2. BASE PC * Collector Power Dissipation 350 mW 3. COLLECTOR Tj Junction Temperature 150 Tstg -55 150 Storage Temperature SOT-23 * : Package Mounted On 99.5% Alumina 10 8 0.6mm. Marking Lot No. Type Name ANX ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-80V, IE=0 Collector Cut-off Current - - -100 nA ICEO VCE=-60

3.10. mmbta56.pdf Size:803K _htsemi

MMBTA56 TRANSISTOR(PNP) SOT–23 FEATURES ? General Purpose Amplifier Applications MARKING: 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -80 V CEO VEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA P Collector Power Dissipation 225 mW C R Thermal Resistance From Junction To Ambient 555 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-100µA, I =0 -80 V (BR)CBO C E Collector-emitter breakdown voltage V I =-1mA, I =0 -80 V (BR)CEO C B Emitter-base breakdown voltage V I =-100µA, I =0 -4 V (BR)EBO E C Collector cut-off current I V =-80V, I =0 -0.1 µA CBO CB E Collector cut-off current I V =-60V, I =0 -0.1 µA CEO

See also transistors datasheet: MMBTA28 , MMBTA42 , MMBTA42LT1 , MMBTA43 , MMBTA43LT1 , MMBTA55 , MMBTA55LT1 , MMBTA56 , BC546 , MMBTA63 , MMBTA63LT1 , MMBTA64 , MMBTA64LT1 , MMBTA70 , MMBTA70LT1 , MMBTA92 , MMBTA92LT1 .

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