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2N4427 Transistor. Datasheet pdf. Equivalent

Type Designator: 2N4427

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 500 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO5

2N4427 Transistor Equivalent Substitute - Cross-Reference Search

2N4427 PDF doc:

1.1. 2n3866_2n4427.pdf Size:45K _philips

2N4427
2N4427

DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors 1995 Oct 27 Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a Philips Semiconductors Product specification Silicon planar epitaxial 2N3866; 2N4427 overlay transistors DESCRIPTION APPLICATIONS NPN overlay transistors in TO-39 metal packages with

1.2. 2n4427_bfr98.pdf Size:132K _st

2N4427
2N4427

1.3. 2n4427.pdf Size:59K _central

2N4427
2N4427

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

Datasheet: 2N442 , 2N4420 , 2N4421 , 2N4422 , 2N4423 , 2N4424 , 2N4425 , 2N4426 , BC639 , 2N4428 , 2N4429 , 2N443 , 2N4430 , 2N4431 , 2N4432 , 2N4432A , 2N4433 .

 


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