2N1117 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N1117

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 5

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.8

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF: 100

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2N1117 transistor: TO5

2N1117 Equivalent Transistors - Cross-Reference Search

2N1117 PDF document for downloads:

5.1. fdfm2n111.pdf Size:289K _fairchild_semi

August 2005 FDFM2N111 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode General Description Applications FDFM2N111 combines the exceptional performance of Standard Buck Converter Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a Features MicroFET package. This device is designed specifically as a single package 4 A, 20 V RDS(ON) = 100m? @ VGS = 4.5 V solution for Standard Buck Converter. It features a fast switching, low gate charge MOSFET with very low on-state RDS(ON) = 150m? @ VGS = 2.5 V resistance. Low Profile - 0.8 mm maximun - in the new package MicroFET 3x3 mm PIN 1 A S/C G 1 6 A A C D 2 5 S/C S/C G 3 4 D D A S/C TOP BOTTOM MLP 3x3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V Drain Current -Continuous (Note 1a) 4 ID A -Pulsed 10 VRRM Schottky Repetiti

See also transistors datasheet: 2N1110 , 2N1111 , 2N1111A , 2N1111B , 2N1114 , 2N1115 , 2N1115A , 2N1116 , 9014 , 2N1118 , 2N1118A , 2N1119 , 2N111A , 2N112 , 2N1120 , 2N1121 , 2N1122 .

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