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MPS5141 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MPS5141

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 6

Maximum collector-emitter voltage |Uce|, V: 6

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 300

Collector capacitance (Cc), pF: 7

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of MPS5141 transistor: TO92

MPS5141 Equivalent Transistors - Cross-Reference Search

MPS5141 PDF document for downloads:

5.1. mps5179r.pdf Size:96K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS5179/D High Frequency Transistor NPN Silicon MPS5179 Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol Value Unit CASE 29–04, STYLE 1 Collector–Emitter Voltage VCEO 12 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO 20 Vdc Emitter–Base Voltage VEBO 2.5 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C PD 200 mW Derate above 25°C 1.14 mW/°C Total Device Dissipation @ TC = 25°C PD 300 mW Derate above 25°C 1.71 mW/°C Storage Temperature Range Tstg –55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage VCEO(sus) 12 — Vdc (IC = 3.0 mAdc, IB = 0) Collector–Base Breakdown Voltage V(BR)CBO 20 — Vdc (IC = 0.001 mAdc, IE = 0) Emitter–Base Breakdown Voltage V(BR)EBO 2.5 — Vdc (IE = 0.01 mAdc, IC = 0) Collector

5.2. pn5179_mps5179_mmbt5179.pdf Size:992K _fairchild_semi

5.3. mps5172.pdf Size:30K _samsung

5.4. 2n5172_2n6076_mps5172_mps6076.pdf Size:70K _central

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com

5.5. mps5179.pdf Size:135K _diodes

NPN SILICON PLANAR MPS5179 HIGH FREQUENCY TRANSISTOR I T I I T IT I I TI D T T T ID D I T T TI I I E-Line T T TO92 Compatible I T T I T I ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i i T T T ° i I iI I e d, applied s or pply of MPS5179 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). T I T IT DITI II V V I µ I V I II i V V I I V I i V V I µ I V I II I µ V V I µ V V I T ° II i V V I I i V I i V V I I i V I i I V V T i T i i T I V V II I V V i II i I I V V i II I V V Ti i i I V V ? i I V V Ii i i MPS5179 .

5.6. mps5179-d.pdf Size:42K _onsemi

MPS5179 Preferred Device High Frequency Transistor NPN Silicon Features • Pb-Free Packages are Available* http://onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector -Emitter Voltage VCEO 12 Vdc 2 BASE Collector -Base Voltage VCBO 20 Vdc Emitter -Base Voltage VEBO 2.5 Vdc 1 Collector Current - Continuous IC 50 mAdc EMITTER Total Device Dissipation @ TA = 25°C PD 200 W Derate above 25°C 1.14 mW/°C MARKING Total Device Dissipation @ TC = 25°C PD 300 W DIAGRAM Derate above 25°C 1.71 mW/°C Storage Temperature Range Tstg -55 to +150 °C MPS Stresses exceeding Maximum Ratings may damage the device. Maximum 5179 Ratings are stress ratings only. Functional operation above the Recommended AYWW G Operating Conditions is not implied. Extended exposure to stresses above the TO-92 G Recommended Operating Conditions may affect device reliability. CASE 29-11 1 STYLE 1 2 3 MPS5179 = Device Code A = Assembly Location Y = Year WW = Work Week

See also transistors datasheet: MPS5133 , MPS5134 , MPS5135 , MPS5136 , MPS5137 , MPS5138 , MPS5139 , MPS5140 , AC128 , MPS5142 , MPS5143 , MPS5172 , MPS5179 , MPS536 , MPS5400 , MPS5400R , MPS5401 .

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