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MPS6513
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MPS6513
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MPS6513
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40310V1 .. 40897
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BCY88 .. BD241
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BDCP20 .. BDW63C
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KRC659E .. KSA614
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KT315A .. KT6102A
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UN911BJ .. ZT284
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ZXTP25040DFH .. ZXTPS720MC
 
MPS6513 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

MPS6513 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MPS6513

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 125

Collector capacitance (Cc), pF: 4

Forward current transfer ratio (hFE), min: 90

Noise Figure, dB: -

Package of MPS6513 transistor: TO92

MPS6513 Equivalent Transistors - Cross-Reference Search

MPS6513 PDF doc:

1.1. mps6513.pdf Size:126K _fairchild_semi

MPS6513
MPS6513
September 2007 MPS6513 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. Sourced from Proces 23. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current (DC) 200 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25C unless otherwise noted Symbol Parameter Max. Units PD

4.1. mps6518.pdf Size:292K _fairchild_semi

MPS6513
MPS6513
Discrete POWER & Signal Technologies MPS6518 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Emitter-Base Voltage 4.0 V EBO IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units MPS6518 P Total Device Dissipat

4.2. mmbt6515_mps6515.pdf Size:103K _fairchild_semi

MPS6513
MPS6513
MPS6515/MMBT6515 NPN General Purpose Amplifier 3 This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a 2 switch and to 100MHz as an amplifier. SOT-23 TO-92 1 Mark: 3J 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector current - Continuous 200 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TC=25C unless otherwise noted Symbol

4.3. mps651.pdf Size:57K _fairchild_semi

MPS6513
MPS6513
MPS651 Switching and Amplifier Applications TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current 0.8 A PC Collector Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Voltage IC=100A, IE=0 80 V BVCEO Collector-Emitter Voltage IC=10mA, IB=0 60 V BVEBO Emitter- Base Voltage IC=10A, IC=0 5 V ICBO Collector Cut-off Current VCB=80V, IE=0 0.1 A IEBO Emitter Cut-off Current VEB=4.0V, IC=0 0.1 A hFE1 DC Current Gain VCE=2V, IC=50mA 75 hFE2 VCE=2V, IC=500mA 75 hFE3 VCE=2V, IC=1.0A 75 hFE4 VCE=2V, IC=2.0A 40 VCE (sat) Collector-Emitter Saturation Voltage IC=1.0A, IB=100mA 300

4.4. mps6514.pdf Size:47K _fairchild_semi

MPS6513
MPS6513
MPS6514 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector current - Continuous 200 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)

4.5. mps651x_series.pdf Size:111K _central

MPS6513
MPS6513
DATA SHEET NPN PNP MPS6512 MPS6516 MPS6513 MPS6517 MPS6514 MPS6518 MPS6515 MPS6519 COMPLEMENTARY SILICON TRANSISTORS JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS6512 Series (NPN) and MPS6516 Series (PNP) types are molded Epoxy Silicon Small Signal Transistors designed for general-purpose amplifier applications. MAXIMUM RATINGS (TA=25C unless otherwise noted) MPS6516 MPS6512 MPS6514 MPS6517 SYMBOL MPS6513 MPS6515 MPS6518 MPS6519 UNITS Collector-Base Voltage VCBO 40 40 40 25 V Collector-Emitter Voltage VCEO 30 25 40 25 V Emitter-Base Voltage VEBO 4.0 V Collector Current IC 100 mA Power Dissipation PD 625 mW Power Dissipation (TC=25C) PD 1.5 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 C Thermal Resistance ?JC 83.3 C/W Thermal Resistance ?JA 200 C/W ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) MPS6516 MPS6512 MPS6514 MPS6517 MPS6513 MPS6515 MPS6518 MPS6519 SYMBOL TEST CONDITIONS MIN

4.6. mps650-mps651-mps750-mps751-cenw650-cenw651-cenw750-cenw751.pdf Size:57K _central

MPS6513
MPS6513
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

4.7. mps650_mps651_mps750_mps751.pdf Size:68K _onsemi

MPS6513
MPS6513
NPN - MPS650, MPS651; PNP - MPS750, MPS751 MPS651 and MPS751 are Preferred Devices Amplifier Transistors Features Pb-Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCE Vdc COLLECTOR NPN MPS650; MPS750 40 3 MPS651; MPS751 60 1 EMITTER Collector-Base Voltage VCB Vdc 2 MPS650; MPS750 60 BASE MPS651; MPS751 80 PNP Emitter-Base Voltage VEB 5.0 Vdc 1 Collector Current - Continuous IC 2.0 Adc EMITTER Total Power Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Power Dissipation @ TC = 25C PD 1.5 W TO-92 Derate above 25C 12 mW/C CASE 29 Operating and Storage Junction TJ, Tstg -55 to +150 C STYLE 1 Temperature Range 1 1 THERMAL CHARACTERISTICS 2 2 3 3 Characteristic Symbol Max Unit STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Thermal Resistance, Junction-to-Ambient VCE 200 C/W AMMO PACK Thermal Resistance, Junction-to-Case VCB 83.3

4.8. mps651.pdf Size:217K _secos

MPS6513
MPS6513
MPS651 0.625 W, 2 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES G H Switching and Amplifier Applications J A D Collector Millimeter REF. Min. Max. 2 B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 3 E 0.36 0.56 Base F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - 1 J 2.42 2.66 Emitter K 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Base Voltage VCBO 80 V Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 2 A Collector Dissipation Pc 0.625 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector-Base Breakdown Voltage V(BR)CBO 80 - - V IC=100µA, IE = 0

4.9. mps651.pdf Size:350K _kec

MPS6513
MPS6513
SEMICONDUCTOR MPS651 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE B C FEATURES High Voltage : VCEO=60V(Min.). High Current : IC(Max.)=1A. N DIM MILLIMETERS High Transition Frequency : fT=150MHz(Typ.). A 4.70 MAX E K B 4.80 MAX Wide Area of Safe Operation. G C 3.70 MAX D Complementary to MPS751. D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ H J 14.00 + 0.50 K 0.55 MAX F F MAXIMUM RATING (Ta=25 ) L 2.30 M 0.45 MAX CHARACTERISTIC SYMBOL RATING UNIT N 1.00 1 2 3 VCBO Collector-Base Voltage 80 V 1. EMITTER 2. BASE VCEO Collector-Emitter Voltage 60 V 3. COLLECTOR VEBO Emitter-Base Voltage 5 V IC DC 1 Collector Current A TO-92 ICP Pulse 2 PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=50V, IE=0 Collector Cut-off Current - - 100 nA

4.10. mps6512_mps6515.pdf Size:179K _microelectronics

MPS6513
MPS6513

See also transistors datasheet: MPS5910 , MPS6076 , MPS6172 , MPS650 , MPS6507 , MPS651 , MPS6511 , MPS6512 , BC327 , MPS6514 , MPS6515 , MPS6516 , MPS6517 , MPS6518 , MPS6519 , MPS6520 , MPS6521 .

Keywords

 MPS6513 Datasheet  MPS6513 Datenblatt  MPS6513 RoHS  MPS6513 Distributor
 MPS6513 Application Notes  MPS6513 Component  MPS6513 Circuit  MPS6513 Schematic
 MPS6513 Equivalent  MPS6513 Cross Reference  MPS6513 Data Sheet  MPS6513 Fiche Technique

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