| |
MPS6555
Transistor Datasheet. Parameters and Characteristics. Type Designator: MPS6555
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.31
Maximum collector-base voltage |Ucb|, V: 35
Maximum collector-emitter voltage |Uce|, V: 25
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 0.6
Maximum junction temperature (Tj), °C: 135
Transition frequency (ft), MHz: 30
Collector capacitance (Cc), pF: 12
Forward current transfer ratio (hFE), min: 200
Noise Figure, dB: - Package of MPS6555
transistor: TO92
MPS6555
Equivalent Transistors - Cross-Reference Search MPS6555
PDF document for downloads:
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SEMICONDUCTOR TECHNICAL DATA
by MPS6560/D
Audio Transistor
MPS6560
NPN Silicon
COLLECTOR
3
2
BASE
1
2
1
3
EMITTER
CASE 29–04, STYLE 1
MAXIMUM RATINGS
TO–92 (TO–226AA)
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 25 Vdc
Collector–Base Voltage VCBO 25 Vdc
Emitter–Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC 500 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg –55 to +150 °C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA(1) 200 °C/mW
Thermal Resistance, Junction to Case RqJC 83.3 °C/mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2) V(BR)CEO 25 — Vdc
(IC = 10 mAdc, IB = 0)
Co |
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SEMICONDUCTOR TECHNICAL DATA
by MPS6520/D
COLLECTOR 3
Amplifier Transistors
NPN
2
MPS6520
BASE
*
MPS6521
1 EMITTER
PNP
MPS6523
COLLECTOR 3
Voltage and current are negative
2
for PNP transistors
BASE
*Motorola Preferred Device
1 EMITTER
MAXIMUM RATINGS
Rating Symbol NPN PNP Unit
Collector–Emitter Voltage VCEO Vdc
MPS6520, MPS6521 25 —
MPS6523 — 25
Collector–Base Voltage VCBO Vdc
1
2
MPS6520, MPS6521 40 —
3
MPS6523 — 25
Emitter–Base Voltage VEBO 4.0 Vdc CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Collector Current — Continuous IC 100 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg –55 to +150 °C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
(Printed Circuit Board Mounting)
Thermal Resistance, |
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SEMICONDUCTOR TECHNICAL DATA
by MPS650/D
NPN
Amplifier Transistors
MPS650
*
MPS651
COLLECTOR COLLECTOR
3 3 PNP
MPS750
2 2
BASE BASE
*
MPS751
NPN PNP
Voltage and current are
1 1
negative for PNP transistors
EMITTER EMITTER
*Motorola Preferred Devices
MAXIMUM RATINGS
MPS650 MPS651
MPS750 MPS751
Rating Symbol Unit
Collector–Emitter Voltage VCE 40 60 Vdc
Collector–Base Voltage VCB 60 80 Vdc
Emitter–Base Voltage VEB 5.0 Vdc
1
2
Collector Current — Continuous IC 2.0 Adc 3
Total Power Dissipation @ TA = 25°C PD 625 mW
CASE 29–04, STYLE 1
Derate above 25°C 5.0 mW/°C
TO–92 (TO–226AA)
Total Power Dissipation @ TC = 25°C PD 1.5 Watt
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg –55 to +150 °C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25° |
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SEMICONDUCTOR TECHNICAL DATA
by MPS6507/D
Amplifier Transistor
COLLECTOR
MPS6507
NPN Silicon
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
1
Rating Symbol Value Unit
2
3
Collector–Emitter Voltage VCEO 20 Vdc
Collector–Base Voltage VCBO 30 Vdc
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Emitter–Base Voltage VEBO 3.0 Vdc
Collector Current — Continuous IC 50 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg –55 to +150 °C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA(1) 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (2) V(BR)CEO 20 — — Vdc
(IC = 1.0 mAdc, IB |
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SEMICONDUCTOR TECHNICAL DATA
by MPS6521/D
COLLECTOR 3
Amplifier Transistors
NPN
2
BASE
*
MPS6521
PNP
1 EMITTER
MPS6523
COLLECTOR 3
Voltage and current are negative
for PNP transistors
2
BASE
*Motorola Preferred Device
1 EMITTER
MAXIMUM RATINGS
Rating Symbol NPN PNP Unit
Collector–Emitter Voltage VCEO Vdc
MPS6521 25 —
MPS6523 — 25
Collector–Base Voltage VCBO Vdc
1
2
MPS6521 40 —
3
MPS6523 — 25
Emitter–Base Voltage VEBO 4.0 Vdc CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Collector Current — Continuous IC 100 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg –55 to +150 °C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
(Printed Circuit Board Mounting)
Thermal Resistance, Junction to Case RqJC 83.3 |
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SEMICONDUCTOR TECHNICAL DATA
by MPS6571/D
Amplifier Transistor
NPN Silicon MPS6571
COLLECTOR
3
2
BASE
1
1
2
EMITTER 3
MAXIMUM RATINGS
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 20 Vdc
Collector–Base Voltage VCBO 25 Vdc
Emitter–Base Voltage VEBO 3.0 Vdc
Collector Current — Continuous IC 50 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg –55 to +150 °C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V(BR)CEO 20 — — Vdc
(IC = 1.0 mAdc, IB = 0)
Co |
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SEMICONDUCTOR TECHNICAL DATA
by MPS6530/D
Amplifier Transistor
MPS6530
NPN Silicon
COLLECTOR
3
2
BASE
1
2
1
3
EMITTER
CASE 29–04, STYLE 1
MAXIMUM RATINGS
TO–92 (TO–226AA)
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 40 Vdc
Collector–Base Voltage VCBO 60 Vdc
Emitter–Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC 600 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C
Junction Temperature TJ, Tstg 150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 0.2 °C/mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V(BR)CEO 40 — Vdc
(IC = 10 mAdc, IB = 0)
Collector–Base Breakdown Voltage V(BR)CBO 60 — Vdc
(IC = 10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage V(BR)EBO 5.0 — Vdc
(IB = 10 mAdc, IC = 0)
Collector Cutoff Current ICBO mAd |
5.8. mps6521.pdf Size:25K _fairchild_semi  |
 | MPS6521
NPN General Purpose Amplifier
• This device is deisgned for general purpose amplifier applications at
collector to 300mA.
• Sourced from process 10.
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 25 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 4.0 V
IC Collector Current - Continuous 100 mA
TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V(BR)CEO Collector-Emitter Sustaining Voltage * IC = 500µA, IB = 0 25 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 4 V
ICBO Emitter Cutoff Current VCB = 30V, IE = 0 50 nA
On Characteristics
hFE DC Current Gain VCE = 10V, IC = 100µA 150
VCE = 10V, IC = 2.0mA 300 600
VCE(sat) Collector-Emitter Saturation Voltage IC = 50mA, IB = 5.0mA 0.5 |
5.9. mmbt6515_mps6515.pdf Size:103K _fairchild_semi  |
 | MPS6515/MMBT6515
NPN General Purpose Amplifier
3
• This device is designed as a general purpose
amplifier and switch.
• The useful dynamic range extends to 100mA as a
2
switch and to 100MHz as an amplifier.
SOT-23
TO-92 1
Mark: 3J
1
1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 25 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 4.0 V
IC Collector current - Continuous 200 mA
TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics TC=25°C unless otherwise noted
Symbol |
5.10. mps6534.pdf Size:292K _fairchild_semi  |
 | Discrete POWER & Signal
Technologies
MPS6534
C TO-92
B
E
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 63. See PN2907A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
V Collector-Base Voltage 40 V
CBO
VEBO Emitter-Base Voltage 4.0 V
IC Collector Current - Continuous 800 mA
-55 to +150
TJ, Tstg Operating and Storage Junction Temperature Range °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Uni |
5.11. mps6562.pdf Size:293K _fairchild_semi  |
 | Discrete POWER & Signal
Technologies
MPS6562
C TO-92
B
E
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 67. See TN4033A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 25 V
V Collector-Base Voltage 25 V
CBO
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 1.0 A
-55 to +150
TJ, Tstg Operating and Storage Junction Temperature Range °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Unit |
5.12. mps6531.pdf Size:292K _fairchild_semi  |
 | Discrete POWER & Signal
Technologies
MPS6531
C TO-92
B
E
NPN General Purpose Amplifier
This device is designed for use as a medium power amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 19. See PN2222A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
V Collector-Base Voltage 60 V
CBO
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 1.0 A
-55 to +150
TJ, Tstg Operating and Storage Junction Temperature Range °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
M |
5.13. mps6518.pdf Size:292K _fairchild_semi  |
 | Discrete POWER & Signal
Technologies
MPS6518
C TO-92
B
E
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA. Sourced
from Process 66. See 2N3906 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
V Emitter-Base Voltage 4.0 V
EBO
IC Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPS6518
P Total Device Dissipat |
5.14. mps6523.pdf Size:292K _fairchild_semi  |
 | Discrete POWER & Signal
Technologies
MPS6523
C TO-92
B
E
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 68. See PN200 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 25 V
V Collector-Base Voltage 45 V
CBO
VEBO Emitter-Base Voltage 4.0 V
IC Collector Current - Continuous 500 mA
-55 to +150
TJ, Tstg Operating and Storage Junction Temperature Range °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units |
5.15. mps6514.pdf Size:47K _fairchild_semi  |
 | MPS6514
NPN General Purpose Amplifier
• This device is designed as a general purpose
amplifier and switch.
• The useful dynamic range extends to 100mA as a
switch and to 100MHz as an amplifier.
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 25 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 4.0 V
IC Collector current - Continuous 200 mA
TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V(BR) |
5.16. mps6513.pdf Size:126K _fairchild_semi  |
 | September 2007
MPS6513
NPN General Purpose Amplifier
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier.
• Sourced from Proces 23.
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 4 V
IC Collector Current (DC) 200 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Max. Units
PD |
5.17. mps651.pdf Size:57K _fairchild_semi  |
 | MPS651
Switching and Amplifier Applications
TO-92
1
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 0.8 A
PC Collector Dissipation 625 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Voltage IC=100µA, IE=0 80 V
BVCEO Collector-Emitter Voltage IC=10mA, IB=0 60 V
BVEBO Emitter- Base Voltage IC=10µA, IC=0 5 V
ICBO Collector Cut-off Current VCB=80V, IE=0 0.1 µA
IEBO Emitter Cut-off Current VEB=4.0V, IC=0 0.1 µA
hFE1 DC Current Gain VCE=2V, IC=50mA 75
hFE2 VCE=2V, IC=500mA 75
hFE3 VCE=2V, IC=1.0A 75
hFE4 VCE=2V, IC=2.0A 40
VCE (sat) Collector-Emitter Saturation Voltage IC=1.0A, IB=100mA 300 |
5.18. mps650-mps651-mps750-mps751-cenw650-cenw651-cenw750-cenw751.pdf Size:57K _central  |
 | 145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 • Fax: (631) 435-1824
|
5.19. mps6520-mps6521.pdf Size:44K _central  |
 | 145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 • Fax: (631) 435-1824
|
5.20. mps651x_series.pdf Size:111K _central  |
 | DATA SHEET
NPN PNP
MPS6512 MPS6516
MPS6513 MPS6517
MPS6514 MPS6518
MPS6515 MPS6519
COMPLEMENTARY
SILICON TRANSISTORS
JEDEC TO-92 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR MPS6512 Series (NPN) and MPS6516 Series (PNP) types are molded Epoxy Silicon
Small Signal Transistors designed for general-purpose amplifier applications.
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
MPS6516
MPS6512 MPS6514 MPS6517
SYMBOL MPS6513 MPS6515 MPS6518 MPS6519 UNITS
Collector-Base Voltage VCBO 40 40 40 25 V
Collector-Emitter Voltage VCEO 30 25 40 25 V
Emitter-Base Voltage VEBO 4.0 V
Collector Current IC 100 mA
Power Dissipation PD 625 mW
Power Dissipation (TC=25°C) PD 1.5 W
Operating and Storage
Junction Temperature TJ,Tstg -65 to +150 °C
Thermal Resistance ?JC 83.3 °C/W
Thermal Resistance ?JA 200 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
MPS6516
MPS6512 MPS6514 MPS6517
MPS6513 MPS6515 MPS6518 MPS6519
SYMBOL TEST CONDITIONS MIN |
5.21. mps650_mps651_mps750_mps751.pdf Size:68K _onsemi  |
 | NPN - MPS650, MPS651;
PNP - MPS750, MPS751
MPS651 and MPS751 are Preferred Devices
Amplifier Transistors
Features
• Pb-Free Packages are Available*
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
2
Rating Symbol Value Unit
BASE
Collector-Emitter Voltage VCE Vdc
COLLECTOR
NPN
MPS650; MPS750 40
3
MPS651; MPS751 60
1
EMITTER
Collector-Base Voltage VCB Vdc
2
MPS650; MPS750 60
BASE
MPS651; MPS751 80
PNP
Emitter-Base Voltage VEB 5.0 Vdc
1
Collector Current - Continuous IC 2.0 Adc
EMITTER
Total Power Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Power Dissipation @ TC = 25°C PD 1.5 W
TO-92
Derate above 25°C 12 mW/°C
CASE 29
Operating and Storage Junction TJ, Tstg -55 to +150 °C STYLE 1
Temperature Range
1
1
THERMAL CHARACTERISTICS
2
2
3
3
Characteristic Symbol Max Unit
STRAIGHT LEAD BENT LEAD
BULK PACK TAPE & REEL
Thermal Resistance, Junction-to-Ambient VCE 200 °C/W
AMMO PACK
Thermal Resistance, Junction-to-Case VCB 83.3 ° |
5.22. mps6521_mps6523.pdf Size:166K _onsemi  |
 | MPS6521 (NPN)
MPS6523 (PNP)
MPS6521 is a Preferred Device
Amplifier Transistors
Features
• Voltage and Current are Negative for PNP Transistors
http://onsemi.com
• Pb-Free Packages are Available*
COLLECTOR
COLLECTOR
MAXIMUM RATINGS
3
3
Rating Symbol NPN PNP Unit
2
2
Collector -Emitter Voltage VCEO Vdc
BASE
BASE
MPS6521 25 -
MPS6523 - 25
1
1
Collector -Base Voltage VCBO Vdc
EMITTER
EMITTER
MPS6521 40 -
MPS6523 - 25
Emitter -Base Voltage VEBO 4.0 Vdc
MARKING
Collector Current - Continuous IC 100 mAdc DIAGRAM
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
MPS
Total Device Dissipation @ TC = 25°C PD 1.5 W
652x
Derate above 25°C 12 mW/°C
AYWW G
TO-92
G
Operating and Storage Junction TJ, Tstg -55 to +150 °C
CASE 29-11
Temperature Range 1
STYLE 1
2
3
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W
MPS652x = Device Code
(Printed Circuit Board Mounting)
x = |
5.23. mps6560-d.pdf Size:43K _onsemi  |
 | MPS6560
Audio Transistor
NPN Silicon
Features
• Pb-Free Package is Available*
http://onsemi.com
COLLECTOR
MAXIMUM RATINGS
3
Rating Symbol Value Unit
Collector -Emitter Voltage VCEO 25 Vdc
2
BASE
Collector -Base Voltage VCBO 25 Vdc
Emitter -Base Voltage VEBO 5.0 Vdc
1
Collector Current - Continuous IC 500 mAdc
EMITTER
Total Device Dissipation @ TA = 25°C PD 625 W
Derate above 25°C 5.0 mW/°C
MARKING
Total Device Dissipation @ TC = 25°C PD 1.5 W
DIAGRAM
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg -55 to +150 °C
Temperature Range
MPS
6560
THERMAL CHARACTERISTICS
AYWW G
TO-92
Characteristic Symbol Max Unit G
CASE 29-11
1
Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W STYLE 1
2
3
(Note 1)
Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
MPS6560 = Device Code
Operating Conditions |
5.24. mps651.pdf Size:217K _secos  |
 | MPS651
0.625 W, 2 A, 60 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES
G H
Switching and Amplifier Applications
J
A D
Collector
Millimeter
REF.
Min. Max.
2
B
A 4.40 4.70
B 4.30 4.70
K
C 12.70 -
D 3.30 3.81
3
E 0.36 0.56
Base
F 0.36 0.51
E C F
G 1.27 TYP.
H 1.10 -
1
J 2.42 2.66
Emitter
K 0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector - Base Voltage VCBO 80 V
Collector - Emitter Voltage VCEO 60 V
Emitter - Base Voltage VEBO 5 V
Collector Current - Continuous IC 2 A
Collector Dissipation Pc 0.625 W
Junction, Storage Temperature TJ, TSTG 150, -55~150 °C
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector-Base Breakdown Voltage V(BR)CBO 80 - - V IC=100µA, IE = 0 |
5.25. mps651.pdf Size:350K _kec  |
 | SEMICONDUCTOR MPS651
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
VOLTAGE REGULATOR, RELAY,
LAMP DRIVER, INDUSTRIAL USE
B C
FEATURES
High Voltage : VCEO=60V(Min.).
High Current : IC(Max.)=1A.
N DIM MILLIMETERS
High Transition Frequency : fT=150MHz(Typ.).
A 4.70 MAX
E
K
B 4.80 MAX
Wide Area of Safe Operation. G
C 3.70 MAX
D
Complementary to MPS751.
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
_
H
J 14.00 + 0.50
K 0.55 MAX
F F
MAXIMUM RATING (Ta=25 )
L 2.30
M 0.45 MAX
CHARACTERISTIC SYMBOL RATING UNIT
N 1.00
1 2 3
VCBO
Collector-Base Voltage 80 V
1. EMITTER
2. BASE
VCEO
Collector-Emitter Voltage 60 V
3. COLLECTOR
VEBO
Emitter-Base Voltage 5 V
IC
DC 1
Collector Current A
TO-92
ICP
Pulse 2
PC
Collector Power Dissipation 625 mW
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=50V, IE=0
Collector Cut-off Current - - 100 nA |
5.26. mps6520-23.pdf Size:159K _microelectronics 5.27. mps6530-35.pdf Size:133K _microelectronics 5.28. mps6512_mps6515.pdf Size:179K _microelectronics See also transistors datasheet: MPS6544
, MPS6545
, MPS6546
, MPS6547
, MPS6548
, MPS6552
, MPS6553
, MPS6554
, BF194
, MPS6560
, MPS6561
, MPS6562
, MPS6563
, MPS6564
, MPS6565
, MPS6566
, MPS6567
. Keywords| MPS6555
Datasheet | MPS6555
Datenblatt | MPS6555
RoHS | MPS6555
Distributor | | MPS6555
Application Notes | MPS6555
Component | MPS6555
Circuit | MPS6555
Schematic | | MPS6555
Equivalent | MPS6555
Cross Reference | MPS6555
Data Sheet | MPS6555
Fiche Technique |
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