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MPS6595
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List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU508DXI
BU508FI .. BUL6822
BUL6822A .. BUV39
BUV40 .. BUX80/6
BUX80/7 .. C9080
C9081 .. CEN-U45
CEN-U51 .. CJD3055
CJD31C .. CMPT918
CMPT930 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM7
D44VM8 .. DKS21
DKS22 .. DTA123EUA
DTA123J .. DTC143XE
DTC143XEA .. DZT491
DZT5401 .. ECG351
ECG352 .. ESM117
ESM118 .. FB3727
FB3728 .. FJV3113R
FJV3114R .. FMMT4964
FMMT497 .. FT400B
FT401 .. GC112
GC115 .. GES4400
GES4401 .. GI2715
GI2716 .. GT309D
GT309E .. HA7540
HA7541 .. HN1C01F
HN1C01FE .. HUN5236
HUN5237 .. JC559A
JC559C .. KF630D
KF630S .. KRA729U
KRA730E .. KRC662U
KRC663F .. KSA643
KSA643-G .. KSC2682-Y
KSC2688 .. KSD2012
KSD2012-G .. KSR2102
KSR2103 .. KT315E-1
KT315E1 .. KT610A
KT610B .. KT8127A
KT8127A-1 .. KT852G
KT852V .. KTA1703
KTA1704 .. KTC813U
KTC814U .. MA287
MA393 .. MH0812
MH0813 .. MJ8503
MJ8504 .. MJE41
MJE41A .. MM4033
MM4036 .. MMBT4403WT1
MMBT4888 .. MMUN2134LT1
MMUN2134LT2 .. MP3905R
MP3906 .. MPQ5447
MPQ5449 .. MPS834
MPS835 .. MRF427
MRF428 .. MZT127
MZT2955 .. NB011FJ
NB011FK .. NB123F
NB123FH .. NB323H
NB323K .. NPS3721
NPS3725 .. NSS40300
NSS40300DD .. OC466K
OC467 .. PBSS306NX
PBSS306NZ .. PEMB30
PEMB4 .. PN4250A
PN4257 .. PZTA14
PZTA27 .. RN1307
RN1308 .. RN2401
RN2402 .. RT484
RT497M .. SD3866AF
SD3960F .. SGS130
SGS131 .. SRA2202EF
SRA2202M .. STA3360PI
STA723D .. SUT161G
SUT290 .. TA1703B
TA1704 .. TI804
TI805 .. TIPL13004
TIPL13005 .. TN3398
TN3402 .. TP4258
TP4258A .. UMG1N
UMG2N .. UN6214
UN6215Q .. ZT1486A
ZT1487 .. ZTX342L
ZTX342M .. ZXTN25100DZ
ZXTN26020DMF .. ZXTPS720MC
 
MPS6595 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

MPS6595 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MPS6595

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.625

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 12

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.15

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 1000

Collector capacitance (Cc), pF: 0.9

Forward current transfer ratio (hFE), min: 110

Noise Figure, dB: -

Package of MPS6595 transistor: TO92

MPS6595 Equivalent Transistors - Cross-Reference Search

MPS6595 PDF doc:

5.1. mps6530r.pdf Size:304K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6530/D Amplifier Transistor MPS6530 NPN Silicon COLLECTOR 3 2 BASE 1 2 1 3 EMITTER CASE 29–04, STYLE 1 MAXIMUM RATINGS TO–92 (TO–226AA) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C Junction Temperature TJ, Tstg 150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 0.2 °C/mW ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO 40 — Vdc (IC = 10 mAdc, IB = 0) Collector–Base Breakdown Voltage V(BR)CBO 60 — Vdc (IC = 10 mAdc, IE = 0) Emitter–Base Breakdown Voltage V(BR)EBO 5.0 — Vdc (IB = 10 mAdc, IC = 0) Collector Cutoff Current ICBO mAd

5.2. mps6507r.pdf Size:59K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6507/D Amplifier Transistor COLLECTOR MPS6507 NPN Silicon 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 3 Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 30 Vdc CASE 29–04, STYLE 1 TO–92 (TO–226AA) Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA(1) 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (2) V(BR)CEO 20 — — Vdc (IC = 1.0 mAdc, IB

5.3. mps6560r.pdf Size:69K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6560/D Audio Transistor MPS6560 NPN Silicon COLLECTOR 3 2 BASE 1 2 1 3 EMITTER CASE 29–04, STYLE 1 MAXIMUM RATINGS TO–92 (TO–226AA) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Base Voltage VCBO 25 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA(1) 200 °C/mW Thermal Resistance, Junction to Case RqJC 83.3 °C/mW ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(2) V(BR)CEO 25 — Vdc (IC = 10 mAdc, IB = 0) Co

5.4. mps6571r.pdf Size:279K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6571/D Amplifier Transistor NPN Silicon MPS6571 COLLECTOR 3 2 BASE 1 1 2 EMITTER 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 TO–92 (TO–226AA) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 25 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO 20 — — Vdc (IC = 1.0 mAdc, IB = 0) Co

5.5. mps650re.pdf Size:173K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS650/D NPN Amplifier Transistors MPS650 * MPS651 COLLECTOR COLLECTOR 3 3 PNP MPS750 2 2 BASE BASE * MPS751 NPN PNP Voltage and current are 1 1 negative for PNP transistors EMITTER EMITTER *Motorola Preferred Devices MAXIMUM RATINGS MPS650 MPS651 MPS750 MPS751 Rating Symbol Unit Collector–Emitter Voltage VCE 40 60 Vdc Collector–Base Voltage VCB 60 80 Vdc Emitter–Base Voltage VEB 5.0 Vdc 1 2 Collector Current — Continuous IC 2.0 Adc 3 Total Power Dissipation @ TA = 25°C PD 625 mW CASE 29–04, STYLE 1 Derate above 25°C 5.0 mW/°C TO–92 (TO–226AA) Total Power Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°

5.6. mps6520r.pdf Size:791K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6520/D COLLECTOR 3 Amplifier Transistors NPN 2 MPS6520 BASE * MPS6521 1 EMITTER PNP MPS6523 COLLECTOR 3 Voltage and current are negative 2 for PNP transistors BASE *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol NPN PNP Unit Collector–Emitter Voltage VCEO Vdc MPS6520, MPS6521 25 — MPS6523 — 25 Collector–Base Voltage VCBO Vdc 1 2 MPS6520, MPS6521 40 — 3 MPS6523 — 25 Emitter–Base Voltage VEBO 4.0 Vdc CASE 29–04, STYLE 1 TO–92 (TO–226AA) Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W (Printed Circuit Board Mounting) Thermal Resistance,

5.7. mps6521rev0.pdf Size:551K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6521/D COLLECTOR 3 Amplifier Transistors NPN 2 BASE * MPS6521 PNP 1 EMITTER MPS6523 COLLECTOR 3 Voltage and current are negative for PNP transistors 2 BASE *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol NPN PNP Unit Collector–Emitter Voltage VCEO Vdc MPS6521 25 — MPS6523 — 25 Collector–Base Voltage VCBO Vdc 1 2 MPS6521 40 — 3 MPS6523 — 25 Emitter–Base Voltage VEBO 4.0 Vdc CASE 29–04, STYLE 1 TO–92 (TO–226AA) Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W (Printed Circuit Board Mounting) Thermal Resistance, Junction to Case RqJC 83.3

5.8. mps6531.pdf Size:292K _fairchild_semi

MPS6595
MPS6595
Discrete POWER & Signal Technologies MPS6531 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Collector-Base Voltage 60 V CBO VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.0 A -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units M

5.9. mps6534.pdf Size:292K _fairchild_semi

MPS6595
MPS6595
Discrete POWER & Signal Technologies MPS6534 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Collector-Base Voltage 40 V CBO VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 800 mA -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Uni

5.10. mps6523.pdf Size:292K _fairchild_semi

MPS6595
MPS6595
Discrete POWER & Signal Technologies MPS6523 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V V Collector-Base Voltage 45 V CBO VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 500 mA -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units

5.11. mps6518.pdf Size:292K _fairchild_semi

MPS6595
MPS6595
Discrete POWER & Signal Technologies MPS6518 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Emitter-Base Voltage 4.0 V EBO IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units MPS6518 P Total Device Dissipat

5.12. mps6562.pdf Size:293K _fairchild_semi

MPS6595
MPS6595
Discrete POWER & Signal Technologies MPS6562 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V V Collector-Base Voltage 25 V CBO VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.0 A -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Unit

5.13. mps6521.pdf Size:25K _fairchild_semi

MPS6595
MPS6595
MPS6521 NPN General Purpose Amplifier • This device is deisgned for general purpose amplifier applications at collector to 300mA. • Sourced from process 10. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 100 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Sustaining Voltage * IC = 500µA, IB = 0 25 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 4 V ICBO Emitter Cutoff Current VCB = 30V, IE = 0 50 nA On Characteristics hFE DC Current Gain VCE = 10V, IC = 100µA 150 VCE = 10V, IC = 2.0mA 300 600 VCE(sat) Collector-Emitter Saturation Voltage IC = 50mA, IB = 5.0mA 0.5

5.14. mmbt6515_mps6515.pdf Size:103K _fairchild_semi

MPS6595
MPS6595
MPS6515/MMBT6515 NPN General Purpose Amplifier 3 • This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100mA as a 2 switch and to 100MHz as an amplifier. SOT-23 TO-92 1 Mark: 3J 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector current - Continuous 200 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TC=25°C unless otherwise noted Symbol

5.15. mps651.pdf Size:57K _fairchild_semi

MPS6595
MPS6595
MPS651 Switching and Amplifier Applications TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current 0.8 A PC Collector Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Voltage IC=100µA, IE=0 80 V BVCEO Collector-Emitter Voltage IC=10mA, IB=0 60 V BVEBO Emitter- Base Voltage IC=10µA, IC=0 5 V ICBO Collector Cut-off Current VCB=80V, IE=0 0.1 µA IEBO Emitter Cut-off Current VEB=4.0V, IC=0 0.1 µA hFE1 DC Current Gain VCE=2V, IC=50mA 75 hFE2 VCE=2V, IC=500mA 75 hFE3 VCE=2V, IC=1.0A 75 hFE4 VCE=2V, IC=2.0A 40 VCE (sat) Collector-Emitter Saturation Voltage IC=1.0A, IB=100mA 300

5.16. mps6514.pdf Size:47K _fairchild_semi

MPS6595
MPS6595
MPS6514 NPN General Purpose Amplifier • This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector current - Continuous 200 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)

5.17. mps6513.pdf Size:126K _fairchild_semi

MPS6595
MPS6595
September 2007 MPS6513 NPN General Purpose Amplifier • This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. • Sourced from Proces 23. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current (DC) 200 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25°C unless otherwise noted Symbol Parameter Max. Units PD

5.18. mps6520-mps6521.pdf Size:44K _central

MPS6595
MPS6595
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.19. mps651x_series.pdf Size:111K _central

MPS6595
MPS6595
DATA SHEET NPN PNP MPS6512 MPS6516 MPS6513 MPS6517 MPS6514 MPS6518 MPS6515 MPS6519 COMPLEMENTARY SILICON TRANSISTORS JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS6512 Series (NPN) and MPS6516 Series (PNP) types are molded Epoxy Silicon Small Signal Transistors designed for general-purpose amplifier applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) MPS6516 MPS6512 MPS6514 MPS6517 SYMBOL MPS6513 MPS6515 MPS6518 MPS6519 UNITS Collector-Base Voltage VCBO 40 40 40 25 V Collector-Emitter Voltage VCEO 30 25 40 25 V Emitter-Base Voltage VEBO 4.0 V Collector Current IC 100 mA Power Dissipation PD 625 mW Power Dissipation (TC=25°C) PD 1.5 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance ?JC 83.3 °C/W Thermal Resistance ?JA 200 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) MPS6516 MPS6512 MPS6514 MPS6517 MPS6513 MPS6515 MPS6518 MPS6519 SYMBOL TEST CONDITIONS MIN

5.20. mps650-mps651-mps750-mps751-cenw650-cenw651-cenw750-cenw751.pdf Size:57K _central

MPS6595
MPS6595
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.21. mps650_mps651_mps750_mps751.pdf Size:68K _onsemi

MPS6595
MPS6595
NPN - MPS650, MPS651; PNP - MPS750, MPS751 MPS651 and MPS751 are Preferred Devices Amplifier Transistors Features • Pb-Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCE Vdc COLLECTOR NPN MPS650; MPS750 40 3 MPS651; MPS751 60 1 EMITTER Collector-Base Voltage VCB Vdc 2 MPS650; MPS750 60 BASE MPS651; MPS751 80 PNP Emitter-Base Voltage VEB 5.0 Vdc 1 Collector Current - Continuous IC 2.0 Adc EMITTER Total Power Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Power Dissipation @ TC = 25°C PD 1.5 W TO-92 Derate above 25°C 12 mW/°C CASE 29 Operating and Storage Junction TJ, Tstg -55 to +150 °C STYLE 1 Temperature Range 1 1 THERMAL CHARACTERISTICS 2 2 3 3 Characteristic Symbol Max Unit STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Thermal Resistance, Junction-to-Ambient VCE 200 °C/W AMMO PACK Thermal Resistance, Junction-to-Case VCB 83.3 °

5.22. mps6521_mps6523.pdf Size:166K _onsemi

MPS6595
MPS6595
MPS6521 (NPN) MPS6523 (PNP) MPS6521 is a Preferred Device Amplifier Transistors Features • Voltage and Current are Negative for PNP Transistors http://onsemi.com • Pb-Free Packages are Available* COLLECTOR COLLECTOR MAXIMUM RATINGS 3 3 Rating Symbol NPN PNP Unit 2 2 Collector -Emitter Voltage VCEO Vdc BASE BASE MPS6521 25 - MPS6523 - 25 1 1 Collector -Base Voltage VCBO Vdc EMITTER EMITTER MPS6521 40 - MPS6523 - 25 Emitter -Base Voltage VEBO 4.0 Vdc MARKING Collector Current - Continuous IC 100 mAdc DIAGRAM Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C MPS Total Device Dissipation @ TC = 25°C PD 1.5 W 652x Derate above 25°C 12 mW/°C AYWW G TO-92 G Operating and Storage Junction TJ, Tstg -55 to +150 °C CASE 29-11 Temperature Range 1 STYLE 1 2 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W MPS652x = Device Code (Printed Circuit Board Mounting) x =

5.23. mps6560-d.pdf Size:43K _onsemi

MPS6595
MPS6595
MPS6560 Audio Transistor NPN Silicon Features • Pb-Free Package is Available* http://onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector -Emitter Voltage VCEO 25 Vdc 2 BASE Collector -Base Voltage VCBO 25 Vdc Emitter -Base Voltage VEBO 5.0 Vdc 1 Collector Current - Continuous IC 500 mAdc EMITTER Total Device Dissipation @ TA = 25°C PD 625 W Derate above 25°C 5.0 mW/°C MARKING Total Device Dissipation @ TC = 25°C PD 1.5 W DIAGRAM Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg -55 to +150 °C Temperature Range MPS 6560 THERMAL CHARACTERISTICS AYWW G TO-92 Characteristic Symbol Max Unit G CASE 29-11 1 Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W STYLE 1 2 3 (Note 1) Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended MPS6560 = Device Code Operating Conditions

5.24. mps651.pdf Size:217K _secos

MPS6595
MPS6595
MPS651 0.625 W, 2 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES G H Switching and Amplifier Applications J A D Collector Millimeter REF. Min. Max. 2 B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 3 E 0.36 0.56 Base F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - 1 J 2.42 2.66 Emitter K 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Base Voltage VCBO 80 V Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 2 A Collector Dissipation Pc 0.625 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector-Base Breakdown Voltage V(BR)CBO 80 - - V IC=100µA, IE = 0

5.25. mps6560-2.pdf Size:349K _cdil

MPS6595
MPS6595
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS MPS6560 NPN MPS6562 PNP TO-92 Plastic Package C B E AudioTransistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 25 V VCEO Collector Emitter Voltage 25 V VEBO Emitter Base Voltage 5.0 V IC Collector Current Continuous 500 mA Power Dissipation at Ta=25?C PD 625 mW Derate Above 25?C 5.0 mW/?C Power Dissipation at Tc=25?C PD 1.5 W Derate Above 25?C 12 mW/?C Operating And Storage Junction Tj, Tstg - 55 to +150 ?C Temperature Range THERMAL CHARACTERISTICS Junction to Case Rth (j-c) 83.3 ?C/W Junction to Ambient in free air *Rth (j-a) 200 ?C/W *Rth (j-a) is measured with the device soldered into a typical printed circuit board ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS Collector Emitter Voltage VCEO IC=1mA, IB=0 25 V Colle

5.26. mps650_51_mps750_51.pdf Size:191K _cdil

MPS6595
MPS6595
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP SILICON PLANAR AMPLIFIER TRANSISTORS MPS650 , MPS651 (NPN) MPS750 , MPS751 (PNP) TO -92 CBE AMPLIFIER TRANSISTORS ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL MPS650 MPS651 UNITS MPS750 MPS751 Collector -Emitter Voltage VCEO 40 60 V Collector -Base Voltage VCBO 60 80 V Emitter -Base Voltage VEBO 5.0 V Collector Current Continuous IC 2.0 A Power Dissipation @Ta=25 degC PD 625 mW 5.0 Derate Above 25deg C mW/deg C Power Dissipation @Tc=25 degC PD 1.5 W 12.0 Derate Above 25deg C mW/deg C Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 83.3 deg C/W Junction to Ambient Rth(j-a) 200 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MPS650 MPS651 UNITS MPS750 MPS751 Collector -Emitter Voltage VCEO* IC=10mA,IB=0 >40 >60 V Collector -Base

5.27. mps6530_31.pdf Size:250K _cdil

MPS6595
MPS6595
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS6530 MPS6531 TO-92 Plastic Package C B E AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 40 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 5 V IC Collector Current Continuous 600 mA Power Dissipation @ Ta=25?C PD 625 mW Derate Above 25?C 5 mW/?C Operating And Storage Junction Tj, Tstg - 55 to +150 Temperature Range THERMAL CHARACTERISTICS Junction to Case Rth (j-c) 83.3 ?C/W Junction to Ambient in free air Rth (j-a) 200 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS VCEO IC=10mA, IB=0 Collector Emitter Voltage 40 V VCBO Collector Base Voltage IC=10µA, IE=0 60 V VEBO Emitter Base Voltage IE=10µA, IC=0 5 V ICBO VCB=40V, IE=0, Collector Cut Off Current 50 nA VCB=40V, IE=

5.28. mps651.pdf Size:350K _kec

MPS6595
MPS6595
SEMICONDUCTOR MPS651 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE B C FEATURES High Voltage : VCEO=60V(Min.). High Current : IC(Max.)=1A. N DIM MILLIMETERS High Transition Frequency : fT=150MHz(Typ.). A 4.70 MAX E K B 4.80 MAX Wide Area of Safe Operation. G C 3.70 MAX D Complementary to MPS751. D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ H J 14.00 + 0.50 K 0.55 MAX F F MAXIMUM RATING (Ta=25 ) L 2.30 M 0.45 MAX CHARACTERISTIC SYMBOL RATING UNIT N 1.00 1 2 3 VCBO Collector-Base Voltage 80 V 1. EMITTER 2. BASE VCEO Collector-Emitter Voltage 60 V 3. COLLECTOR VEBO Emitter-Base Voltage 5 V IC DC 1 Collector Current A TO-92 ICP Pulse 2 PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=50V, IE=0 Collector Cut-off Current - - 100 nA

5.29. mps6520-23.pdf Size:159K _microelectronics

MPS6595
MPS6595

5.30. mps6530-35.pdf Size:133K _microelectronics

MPS6595
MPS6595

5.31. mps6512_mps6515.pdf Size:179K _microelectronics

MPS6595
MPS6595

See also transistors datasheet: MPS6573 , MPS6574 , MPS6575 , MPS6576 , MPS6579 , MPS6580 , MPS6590 , MPS6591 , 2N2905 , MPS6601 , MPS6602 , MPS6651 , MPS6652 , MPS6714 , MPS6715 , MPS6716 , MPS6717 .

Keywords

 MPS6595 Datasheet  MPS6595 Datenblatt  MPS6595 RoHS  MPS6595 Distributor
 MPS6595 Application Notes  MPS6595 Component  MPS6595 Circuit  MPS6595 Schematic
 MPS6595 Equivalent  MPS6595 Cross Reference  MPS6595 Data Sheet  MPS6595 Fiche Technique

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