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MPS6595
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List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
MPS6595 All Transistors Datasheet. Power MOSFET, IGBT, IC, Triacs Database. Semiconductor Catalog
 

MPS6595 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MPS6595

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.625

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 12

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.15

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 1000

Collector capacitance (Cc), pF: 0.9

Forward current transfer ratio (hFE), min: 110

Noise Figure, dB: -

Package of MPS6595 transistor: TO92

MPS6595 Equivalent Transistors - Cross-Reference Search

MPS6595 PDF doc:

5.1. mps650re.pdf Size:173K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS650/D NPN Amplifier Transistors MPS650 * MPS651 COLLECTOR COLLECTOR 3 3 PNP MPS750 2 2 BASE BASE * MPS751 NPN PNP Voltage and current are 1 1 negative for PNP transistors EMITTER EMITTER *Motorola Preferred Devices MAXIMUM RATINGS MPS650 MPS651 MPS750 MPS751 Rating Symbol Unit Collector–Emitter Voltage VCE 40 60 Vdc Collector–Base Voltage VCB 60 80 Vdc Emitter–Base Voltage VEB 5.0 Vdc 1 2 Collector Current — Continuous IC 2.0 Adc 3 Total Power Dissipation @ TA = 25°C PD 625 mW CASE 29–04, STYLE 1 Derate above 25°C 5.0 mW/°C TO–92 (TO–226AA) Total Power Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°

5.2. mps6521rev0.pdf Size:551K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6521/D COLLECTOR 3 Amplifier Transistors NPN 2 BASE * MPS6521 PNP 1 EMITTER MPS6523 COLLECTOR 3 Voltage and current are negative for PNP transistors 2 BASE *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol NPN PNP Unit Collector–Emitter Voltage VCEO Vdc MPS6521 25 — MPS6523 — 25 Collector–Base Voltage VCBO Vdc 1 2 MPS6521 40 — 3 MPS6523 — 25 Emitter–Base Voltage VEBO 4.0 Vdc CASE 29–04, STYLE 1 TO–92 (TO–226AA) Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W (Printed Circuit Board Mounting) Thermal Resistance, Junction to Case RqJC 83.3

5.3. mps6571r.pdf Size:279K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6571/D Amplifier Transistor NPN Silicon MPS6571 COLLECTOR 3 2 BASE 1 1 2 EMITTER 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 TO–92 (TO–226AA) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 25 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO 20 — — Vdc (IC = 1.0 mAdc, IB = 0) Co

5.4. mps6530r.pdf Size:304K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6530/D Amplifier Transistor MPS6530 NPN Silicon COLLECTOR 3 2 BASE 1 2 1 3 EMITTER CASE 29–04, STYLE 1 MAXIMUM RATINGS TO–92 (TO–226AA) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C Junction Temperature TJ, Tstg 150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 0.2 °C/mW ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO 40 — Vdc (IC = 10 mAdc, IB = 0) Collector–Base Breakdown Voltage V(BR)CBO 60 — Vdc (IC = 10 mAdc, IE = 0) Emitter–Base Breakdown Voltage V(BR)EBO 5.0 — Vdc (IB = 10 mAdc, IC = 0) Collector Cutoff Current ICBO mAd

5.5. mps6560r.pdf Size:69K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6560/D Audio Transistor MPS6560 NPN Silicon COLLECTOR 3 2 BASE 1 2 1 3 EMITTER CASE 29–04, STYLE 1 MAXIMUM RATINGS TO–92 (TO–226AA) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Base Voltage VCBO 25 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA(1) 200 °C/mW Thermal Resistance, Junction to Case RqJC 83.3 °C/mW ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(2) V(BR)CEO 25 — Vdc (IC = 10 mAdc, IB = 0) Co

5.6. mps6520r.pdf Size:791K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6520/D COLLECTOR 3 Amplifier Transistors NPN 2 MPS6520 BASE * MPS6521 1 EMITTER PNP MPS6523 COLLECTOR 3 Voltage and current are negative 2 for PNP transistors BASE *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol NPN PNP Unit Collector–Emitter Voltage VCEO Vdc MPS6520, MPS6521 25 — MPS6523 — 25 Collector–Base Voltage VCBO Vdc 1 2 MPS6520, MPS6521 40 — 3 MPS6523 — 25 Emitter–Base Voltage VEBO 4.0 Vdc CASE 29–04, STYLE 1 TO–92 (TO–226AA) Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W (Printed Circuit Board Mounting) Thermal Resistance,

5.7. mps6507r.pdf Size:59K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6507/D Amplifier Transistor COLLECTOR MPS6507 NPN Silicon 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 3 Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 30 Vdc CASE 29–04, STYLE 1 TO–92 (TO–226AA) Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA(1) 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (2) V(BR)CEO 20 — — Vdc (IC = 1.0 mAdc, IB

5.8. mps651.pdf Size:57K _fairchild_semi

MPS6595
MPS6595
MPS651 Switching and Amplifier Applications TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current 0.8 A PC Collector Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Voltage IC=100µA, IE=0 80 V BVCEO Collector-Emitter Voltage IC=10mA, IB=0 60 V BVEBO Emitter- Base Voltage IC=10µA, IC=0 5 V ICBO Collector Cut-off Current VCB=80V, IE=0 0.1 µA IEBO Emitter Cut-off Current VEB=4.0V, IC=0 0.1 µA hFE1 DC Current Gain VCE=2V, IC=50mA 75 hFE2 VCE=2V, IC=500mA 75 hFE3 VCE=2V, IC=1.0A 75 hFE4 VCE=2V, IC=2.0A 40 VCE (sat) Collector-Emitter Saturation Voltage IC=1.0A, IB=100mA 300

5.9. mps6562.pdf Size:293K _fairchild_semi

MPS6595
MPS6595
Discrete POWER & Signal Technologies MPS6562 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V V Collector-Base Voltage 25 V CBO VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.0 A -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Unit

5.10. mps6531.pdf Size:292K _fairchild_semi

MPS6595
MPS6595
Discrete POWER & Signal Technologies MPS6531 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Collector-Base Voltage 60 V CBO VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.0 A -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units M

5.11. mps6521.pdf Size:25K _fairchild_semi

MPS6595
MPS6595
MPS6521 NPN General Purpose Amplifier • This device is deisgned for general purpose amplifier applications at collector to 300mA. • Sourced from process 10. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 100 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Sustaining Voltage * IC = 500µA, IB = 0 25 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 4 V ICBO Emitter Cutoff Current VCB = 30V, IE = 0 50 nA On Characteristics hFE DC Current Gain VCE = 10V, IC = 100µA 150 VCE = 10V, IC = 2.0mA 300 600 VCE(sat) Collector-Emitter Saturation Voltage IC = 50mA, IB = 5.0mA 0.5

5.12. mps6513.pdf Size:126K _fairchild_semi

MPS6595
MPS6595
September 2007 MPS6513 NPN General Purpose Amplifier • This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. • Sourced from Proces 23. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current (DC) 200 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25°C unless otherwise noted Symbol Parameter Max. Units PD

5.13. mmbt6515_mps6515.pdf Size:103K _fairchild_semi

MPS6595
MPS6595
MPS6515/MMBT6515 NPN General Purpose Amplifier 3 • This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100mA as a 2 switch and to 100MHz as an amplifier. SOT-23 TO-92 1 Mark: 3J 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector current - Continuous 200 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TC=25°C unless otherwise noted Symbol

5.14. mps6514.pdf Size:47K _fairchild_semi

MPS6595
MPS6595
MPS6514 NPN General Purpose Amplifier • This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector current - Continuous 200 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)

5.15. mps6518.pdf Size:292K _fairchild_semi

MPS6595
MPS6595
Discrete POWER & Signal Technologies MPS6518 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Emitter-Base Voltage 4.0 V EBO IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units MPS6518 P Total Device Dissipat

5.16. mps6523.pdf Size:292K _fairchild_semi

MPS6595
MPS6595
Discrete POWER & Signal Technologies MPS6523 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V V Collector-Base Voltage 45 V CBO VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 500 mA -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units

5.17. mps6534.pdf Size:292K _fairchild_semi

MPS6595
MPS6595
Discrete POWER & Signal Technologies MPS6534 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Collector-Base Voltage 40 V CBO VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 800 mA -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Uni

5.18. mps6520-mps6521.pdf Size:44K _central

MPS6595
MPS6595
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.19. mps650-mps651-mps750-mps751-cenw650-cenw651-cenw750-cenw751.pdf Size:57K _central

MPS6595
MPS6595
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.20. mps651x_series.pdf Size:111K _central

MPS6595
MPS6595
DATA SHEET NPN PNP MPS6512 MPS6516 MPS6513 MPS6517 MPS6514 MPS6518 MPS6515 MPS6519 COMPLEMENTARY SILICON TRANSISTORS JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS6512 Series (NPN) and MPS6516 Series (PNP) types are molded Epoxy Silicon Small Signal Transistors designed for general-purpose amplifier applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) MPS6516 MPS6512 MPS6514 MPS6517 SYMBOL MPS6513 MPS6515 MPS6518 MPS6519 UNITS Collector-Base Voltage VCBO 40 40 40 25 V Collector-Emitter Voltage VCEO 30 25 40 25 V Emitter-Base Voltage VEBO 4.0 V Collector Current IC 100 mA Power Dissipation PD 625 mW Power Dissipation (TC=25°C) PD 1.5 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance ?JC 83.3 °C/W Thermal Resistance ?JA 200 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) MPS6516 MPS6512 MPS6514 MPS6517 MPS6513 MPS6515 MPS6518 MPS6519 SYMBOL TEST CONDITIONS MIN

5.21. mps650_mps651_mps750_mps751.pdf Size:68K _onsemi

MPS6595
MPS6595
NPN - MPS650, MPS651; PNP - MPS750, MPS751 MPS651 and MPS751 are Preferred Devices Amplifier Transistors Features • Pb-Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCE Vdc COLLECTOR NPN MPS650; MPS750 40 3 MPS651; MPS751 60 1 EMITTER Collector-Base Voltage VCB Vdc 2 MPS650; MPS750 60 BASE MPS651; MPS751 80 PNP Emitter-Base Voltage VEB 5.0 Vdc 1 Collector Current - Continuous IC 2.0 Adc EMITTER Total Power Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Power Dissipation @ TC = 25°C PD 1.5 W TO-92 Derate above 25°C 12 mW/°C CASE 29 Operating and Storage Junction TJ, Tstg -55 to +150 °C STYLE 1 Temperature Range 1 1 THERMAL CHARACTERISTICS 2 2 3 3 Characteristic Symbol Max Unit STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Thermal Resistance, Junction-to-Ambient VCE 200 °C/W AMMO PACK Thermal Resistance, Junction-to-Case VCB 83.3 °

5.22. mps6521_mps6523.pdf Size:166K _onsemi

MPS6595
MPS6595
MPS6521 (NPN) MPS6523 (PNP) MPS6521 is a Preferred Device Amplifier Transistors Features • Voltage and Current are Negative for PNP Transistors http://onsemi.com • Pb-Free Packages are Available* COLLECTOR COLLECTOR MAXIMUM RATINGS 3 3 Rating Symbol NPN PNP Unit 2 2 Collector -Emitter Voltage VCEO Vdc BASE BASE MPS6521 25 - MPS6523 - 25 1 1 Collector -Base Voltage VCBO Vdc EMITTER EMITTER MPS6521 40 - MPS6523 - 25 Emitter -Base Voltage VEBO 4.0 Vdc MARKING Collector Current - Continuous IC 100 mAdc DIAGRAM Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C MPS Total Device Dissipation @ TC = 25°C PD 1.5 W 652x Derate above 25°C 12 mW/°C AYWW G TO-92 G Operating and Storage Junction TJ, Tstg -55 to +150 °C CASE 29-11 Temperature Range 1 STYLE 1 2 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W MPS652x = Device Code (Printed Circuit Board Mounting) x =

5.23. mps6560-d.pdf Size:43K _onsemi

MPS6595
MPS6595
MPS6560 Audio Transistor NPN Silicon Features • Pb-Free Package is Available* http://onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector -Emitter Voltage VCEO 25 Vdc 2 BASE Collector -Base Voltage VCBO 25 Vdc Emitter -Base Voltage VEBO 5.0 Vdc 1 Collector Current - Continuous IC 500 mAdc EMITTER Total Device Dissipation @ TA = 25°C PD 625 W Derate above 25°C 5.0 mW/°C MARKING Total Device Dissipation @ TC = 25°C PD 1.5 W DIAGRAM Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg -55 to +150 °C Temperature Range MPS 6560 THERMAL CHARACTERISTICS AYWW G TO-92 Characteristic Symbol Max Unit G CASE 29-11 1 Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W STYLE 1 2 3 (Note 1) Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended MPS6560 = Device Code Operating Conditions

5.24. mps651.pdf Size:217K _secos

MPS6595
MPS6595
MPS651 0.625 W, 2 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES G H Switching and Amplifier Applications J A D Collector Millimeter REF. Min. Max. 2 B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 3 E 0.36 0.56 Base F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - 1 J 2.42 2.66 Emitter K 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Base Voltage VCBO 80 V Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 2 A Collector Dissipation Pc 0.625 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector-Base Breakdown Voltage V(BR)CBO 80 - - V IC=100µA, IE = 0

5.25. mps6560-2.pdf Size:349K _cdil

MPS6595
MPS6595
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS MPS6560 NPN MPS6562 PNP TO-92 Plastic Package C B E AudioTransistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 25 V VCEO Collector Emitter Voltage 25 V VEBO Emitter Base Voltage 5.0 V IC Collector Current Continuous 500 mA Power Dissipation at Ta=25?C PD 625 mW Derate Above 25?C 5.0 mW/?C Power Dissipation at Tc=25?C PD 1.5 W Derate Above 25?C 12 mW/?C Operating And Storage Junction Tj, Tstg - 55 to +150 ?C Temperature Range THERMAL CHARACTERISTICS Junction to Case Rth (j-c) 83.3 ?C/W Junction to Ambient in free air *Rth (j-a) 200 ?C/W *Rth (j-a) is measured with the device soldered into a typical printed circuit board ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS Collector Emitter Voltage VCEO IC=1mA, IB=0 25 V Colle

5.26. mps6530_31.pdf Size:250K _cdil

MPS6595
MPS6595
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS6530 MPS6531 TO-92 Plastic Package C B E AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 40 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 5 V IC Collector Current Continuous 600 mA Power Dissipation @ Ta=25?C PD 625 mW Derate Above 25?C 5 mW/?C Operating And Storage Junction Tj, Tstg - 55 to +150 Temperature Range THERMAL CHARACTERISTICS Junction to Case Rth (j-c) 83.3 ?C/W Junction to Ambient in free air Rth (j-a) 200 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS VCEO IC=10mA, IB=0 Collector Emitter Voltage 40 V VCBO Collector Base Voltage IC=10µA, IE=0 60 V VEBO Emitter Base Voltage IE=10µA, IC=0 5 V ICBO VCB=40V, IE=0, Collector Cut Off Current 50 nA VCB=40V, IE=

5.27. mps650_51_mps750_51.pdf Size:191K _cdil

MPS6595
MPS6595
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP SILICON PLANAR AMPLIFIER TRANSISTORS MPS650 , MPS651 (NPN) MPS750 , MPS751 (PNP) TO -92 CBE AMPLIFIER TRANSISTORS ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL MPS650 MPS651 UNITS MPS750 MPS751 Collector -Emitter Voltage VCEO 40 60 V Collector -Base Voltage VCBO 60 80 V Emitter -Base Voltage VEBO 5.0 V Collector Current Continuous IC 2.0 A Power Dissipation @Ta=25 degC PD 625 mW 5.0 Derate Above 25deg C mW/deg C Power Dissipation @Tc=25 degC PD 1.5 W 12.0 Derate Above 25deg C mW/deg C Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 83.3 deg C/W Junction to Ambient Rth(j-a) 200 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MPS650 MPS651 UNITS MPS750 MPS751 Collector -Emitter Voltage VCEO* IC=10mA,IB=0 >40 >60 V Collector -Base

5.28. mps651.pdf Size:350K _kec

MPS6595
MPS6595
SEMICONDUCTOR MPS651 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE B C FEATURES High Voltage : VCEO=60V(Min.). High Current : IC(Max.)=1A. N DIM MILLIMETERS High Transition Frequency : fT=150MHz(Typ.). A 4.70 MAX E K B 4.80 MAX Wide Area of Safe Operation. G C 3.70 MAX D Complementary to MPS751. D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ H J 14.00 + 0.50 K 0.55 MAX F F MAXIMUM RATING (Ta=25 ) L 2.30 M 0.45 MAX CHARACTERISTIC SYMBOL RATING UNIT N 1.00 1 2 3 VCBO Collector-Base Voltage 80 V 1. EMITTER 2. BASE VCEO Collector-Emitter Voltage 60 V 3. COLLECTOR VEBO Emitter-Base Voltage 5 V IC DC 1 Collector Current A TO-92 ICP Pulse 2 PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=50V, IE=0 Collector Cut-off Current - - 100 nA

5.29. mps6530-35.pdf Size:133K _microelectronics

MPS6595
MPS6595

5.30. mps6512_mps6515.pdf Size:179K _microelectronics

MPS6595
MPS6595

5.31. mps6520-23.pdf Size:159K _microelectronics

MPS6595
MPS6595

See also transistors datasheet: MPS6573 , MPS6574 , MPS6575 , MPS6576 , MPS6579 , MPS6580 , MPS6590 , MPS6591 , 2N2905 , MPS6601 , MPS6602 , MPS6651 , MPS6652 , MPS6714 , MPS6715 , MPS6716 , MPS6717 .

Keywords

 MPS6595 Datasheet  MPS6595 Design MPS6595 MOSFET MPS6595 Power
 MPS6595 RoHS Compliant MPS6595 Service MPS6595 Triacs MPS6595 Semiconductor
 MPS6595 Database MPS6595 Innovation MPS6595 IC MPS6595 Electricity

 

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