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MPS6595
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List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
MPS6595 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

MPS6595 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MPS6595

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.625

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 12

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.15

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 1000

Collector capacitance (Cc), pF: 0.9

Forward current transfer ratio (hFE), min: 110

Noise Figure, dB: -

Package of MPS6595 transistor: TO92

MPS6595 Equivalent Transistors - Cross-Reference Search

MPS6595 PDF doc:

5.1. mps6530r.pdf Size:304K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6530/D Amplifier Transistor MPS6530 NPN Silicon COLLECTOR 3 2 BASE 1 2 1 3 EMITTER CASE 29–04, STYLE 1 MAXIMUM RATINGS TO–92 (TO–226AA) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C Junction Temperature TJ, Tstg 150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 0.2 °C/mW ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO 40 — Vdc (IC = 10 mAdc, IB = 0) Collector–Base Breakdown Voltage V(BR)CBO 60 — Vdc (IC = 10 mAdc, IE = 0) Emitter–Base Breakdown Voltage V(BR)EBO 5.0 — Vdc (IB = 10 mAdc, IC = 0) Collector Cutoff Current ICBO mAd

5.2. mps6507r.pdf Size:59K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6507/D Amplifier Transistor COLLECTOR MPS6507 NPN Silicon 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 3 Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 30 Vdc CASE 29–04, STYLE 1 TO–92 (TO–226AA) Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA(1) 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (2) V(BR)CEO 20 — — Vdc (IC = 1.0 mAdc, IB

5.3. mps6560r.pdf Size:69K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6560/D Audio Transistor MPS6560 NPN Silicon COLLECTOR 3 2 BASE 1 2 1 3 EMITTER CASE 29–04, STYLE 1 MAXIMUM RATINGS TO–92 (TO–226AA) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Base Voltage VCBO 25 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA(1) 200 °C/mW Thermal Resistance, Junction to Case RqJC 83.3 °C/mW ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(2) V(BR)CEO 25 — Vdc (IC = 10 mAdc, IB = 0) Co

5.4. mps6571r.pdf Size:279K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6571/D Amplifier Transistor NPN Silicon MPS6571 COLLECTOR 3 2 BASE 1 1 2 EMITTER 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 TO–92 (TO–226AA) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 25 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO 20 — — Vdc (IC = 1.0 mAdc, IB = 0) Co

5.5. mps650re.pdf Size:173K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS650/D NPN Amplifier Transistors MPS650 * MPS651 COLLECTOR COLLECTOR 3 3 PNP MPS750 2 2 BASE BASE * MPS751 NPN PNP Voltage and current are 1 1 negative for PNP transistors EMITTER EMITTER *Motorola Preferred Devices MAXIMUM RATINGS MPS650 MPS651 MPS750 MPS751 Rating Symbol Unit Collector–Emitter Voltage VCE 40 60 Vdc Collector–Base Voltage VCB 60 80 Vdc Emitter–Base Voltage VEB 5.0 Vdc 1 2 Collector Current — Continuous IC 2.0 Adc 3 Total Power Dissipation @ TA = 25°C PD 625 mW CASE 29–04, STYLE 1 Derate above 25°C 5.0 mW/°C TO–92 (TO–226AA) Total Power Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°

5.6. mps6520r.pdf Size:791K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6520/D COLLECTOR 3 Amplifier Transistors NPN 2 MPS6520 BASE * MPS6521 1 EMITTER PNP MPS6523 COLLECTOR 3 Voltage and current are negative 2 for PNP transistors BASE *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol NPN PNP Unit Collector–Emitter Voltage VCEO Vdc MPS6520, MPS6521 25 — MPS6523 — 25 Collector–Base Voltage VCBO Vdc 1 2 MPS6520, MPS6521 40 — 3 MPS6523 — 25 Emitter–Base Voltage VEBO 4.0 Vdc CASE 29–04, STYLE 1 TO–92 (TO–226AA) Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W (Printed Circuit Board Mounting) Thermal Resistance,

5.7. mps6521rev0.pdf Size:551K _motorola

MPS6595
MPS6595
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6521/D COLLECTOR 3 Amplifier Transistors NPN 2 BASE * MPS6521 PNP 1 EMITTER MPS6523 COLLECTOR 3 Voltage and current are negative for PNP transistors 2 BASE *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol NPN PNP Unit Collector–Emitter Voltage VCEO Vdc MPS6521 25 — MPS6523 — 25 Collector–Base Voltage VCBO Vdc 1 2 MPS6521 40 — 3 MPS6523 — 25 Emitter–Base Voltage VEBO 4.0 Vdc CASE 29–04, STYLE 1 TO–92 (TO–226AA) Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W (Printed Circuit Board Mounting) Thermal Resistance, Junction to Case RqJC 83.3

5.8. mps6531.pdf Size:292K _fairchild_semi

MPS6595
MPS6595
Discrete POWER & Signal Technologies MPS6531 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Collector-Base Voltage 60 V CBO VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.0 A -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units M

5.9. mps6534.pdf Size:292K _fairchild_semi

MPS6595
MPS6595
Discrete POWER & Signal Technologies MPS6534 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Collector-Base Voltage 40 V CBO VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 800 mA -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Uni

5.10. mps6523.pdf Size:292K _fairchild_semi

MPS6595
MPS6595
Discrete POWER & Signal Technologies MPS6523 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V V Collector-Base Voltage 45 V CBO VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 500 mA -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units

5.11. mps6518.pdf Size:292K _fairchild_semi

MPS6595
MPS6595
Discrete POWER & Signal Technologies MPS6518 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Emitter-Base Voltage 4.0 V EBO IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units MPS6518 P Total Device Dissipat

5.12. mps6562.pdf Size:293K _fairchild_semi

MPS6595
MPS6595
Discrete POWER & Signal Technologies MPS6562 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V V Collector-Base Voltage 25 V CBO VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.0 A -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Unit

5.13. mps6521.pdf Size:25K _fairchild_semi

MPS6595
MPS6595
MPS6521 NPN General Purpose Amplifier • This device is deisgned for general purpose amplifier applications at collector to 300mA. • Sourced from process 10. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 100 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Sustaining Voltage * IC = 500µA, IB = 0 25 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 4 V ICBO Emitter Cutoff Current VCB = 30V, IE = 0 50 nA On Characteristics hFE DC Current Gain VCE = 10V, IC = 100µA 150 VCE = 10V, IC = 2.0mA 300 600 VCE(sat) Collector-Emitter Saturation Voltage IC = 50mA, IB = 5.0mA 0.5

5.14. mmbt6515_mps6515.pdf Size:103K _fairchild_semi

MPS6595
MPS6595
MPS6515/MMBT6515 NPN General Purpose Amplifier 3 • This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100mA as a 2 switch and to 100MHz as an amplifier. SOT-23 TO-92 1 Mark: 3J 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector current - Continuous 200 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TC=25°C unless otherwise noted Symbol

5.15. mps651.pdf Size:57K _fairchild_semi

MPS6595
MPS6595
MPS651 Switching and Amplifier Applications TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current 0.8 A PC Collector Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Voltage IC=100µA, IE=0 80 V BVCEO Collector-Emitter Voltage IC=10mA, IB=0 60 V BVEBO Emitter- Base Voltage IC=10µA, IC=0 5 V ICBO Collector Cut-off Current VCB=80V, IE=0 0.1 µA IEBO Emitter Cut-off Current VEB=4.0V, IC=0 0.1 µA hFE1 DC Current Gain VCE=2V, IC=50mA 75 hFE2 VCE=2V, IC=500mA 75 hFE3 VCE=2V, IC=1.0A 75 hFE4 VCE=2V, IC=2.0A 40 VCE (sat) Collector-Emitter Saturation Voltage IC=1.0A, IB=100mA 300

5.16. mps6514.pdf Size:47K _fairchild_semi

MPS6595
MPS6595
MPS6514 NPN General Purpose Amplifier • This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector current - Continuous 200 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)

5.17. mps6513.pdf Size:126K _fairchild_semi

MPS6595
MPS6595
September 2007 MPS6513 NPN General Purpose Amplifier • This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. • Sourced from Proces 23. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current (DC) 200 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25°C unless otherwise noted Symbol Parameter Max. Units PD

5.18. mps6520-mps6521.pdf Size:44K _central

MPS6595
MPS6595
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.19. mps651x_series.pdf Size:111K _central

MPS6595
MPS6595
DATA SHEET NPN PNP MPS6512 MPS6516 MPS6513 MPS6517 MPS6514 MPS6518 MPS6515 MPS6519 COMPLEMENTARY SILICON TRANSISTORS JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS6512 Series (NPN) and MPS6516 Series (PNP) types are molded Epoxy Silicon Small Signal Transistors designed for general-purpose amplifier applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) MPS6516 MPS6512 MPS6514 MPS6517 SYMBOL MPS6513 MPS6515 MPS6518 MPS6519 UNITS Collector-Base Voltage VCBO 40 40 40 25 V Collector-Emitter Voltage VCEO 30 25 40 25 V Emitter-Base Voltage VEBO 4.0 V Collector Current IC 100 mA Power Dissipation PD 625 mW Power Dissipation (TC=25°C) PD 1.5 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance ?JC 83.3 °C/W Thermal Resistance ?JA 200 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) MPS6516 MPS6512 MPS6514 MPS6517 MPS6513 MPS6515 MPS6518 MPS6519 SYMBOL TEST CONDITIONS MIN

5.20. mps650-mps651-mps750-mps751-cenw650-cenw651-cenw750-cenw751.pdf Size:57K _central

MPS6595
MPS6595
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.21. mps650_mps651_mps750_mps751.pdf Size:68K _onsemi

MPS6595
MPS6595
NPN - MPS650, MPS651; PNP - MPS750, MPS751 MPS651 and MPS751 are Preferred Devices Amplifier Transistors Features • Pb-Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCE Vdc COLLECTOR NPN MPS650; MPS750 40 3 MPS651; MPS751 60 1 EMITTER Collector-Base Voltage VCB Vdc 2 MPS650; MPS750 60 BASE MPS651; MPS751 80 PNP Emitter-Base Voltage VEB 5.0 Vdc 1 Collector Current - Continuous IC 2.0 Adc EMITTER Total Power Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Power Dissipation @ TC = 25°C PD 1.5 W TO-92 Derate above 25°C 12 mW/°C CASE 29 Operating and Storage Junction TJ, Tstg -55 to +150 °C STYLE 1 Temperature Range 1 1 THERMAL CHARACTERISTICS 2 2 3 3 Characteristic Symbol Max Unit STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Thermal Resistance, Junction-to-Ambient VCE 200 °C/W AMMO PACK Thermal Resistance, Junction-to-Case VCB 83.3 °

5.22. mps6521_mps6523.pdf Size:166K _onsemi

MPS6595
MPS6595
MPS6521 (NPN) MPS6523 (PNP) MPS6521 is a Preferred Device Amplifier Transistors Features • Voltage and Current are Negative for PNP Transistors http://onsemi.com • Pb-Free Packages are Available* COLLECTOR COLLECTOR MAXIMUM RATINGS 3 3 Rating Symbol NPN PNP Unit 2 2 Collector -Emitter Voltage VCEO Vdc BASE BASE MPS6521 25 - MPS6523 - 25 1 1 Collector -Base Voltage VCBO Vdc EMITTER EMITTER MPS6521 40 - MPS6523 - 25 Emitter -Base Voltage VEBO 4.0 Vdc MARKING Collector Current - Continuous IC 100 mAdc DIAGRAM Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C MPS Total Device Dissipation @ TC = 25°C PD 1.5 W 652x Derate above 25°C 12 mW/°C AYWW G TO-92 G Operating and Storage Junction TJ, Tstg -55 to +150 °C CASE 29-11 Temperature Range 1 STYLE 1 2 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W MPS652x = Device Code (Printed Circuit Board Mounting) x =

5.23. mps6560-d.pdf Size:43K _onsemi

MPS6595
MPS6595
MPS6560 Audio Transistor NPN Silicon Features • Pb-Free Package is Available* http://onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector -Emitter Voltage VCEO 25 Vdc 2 BASE Collector -Base Voltage VCBO 25 Vdc Emitter -Base Voltage VEBO 5.0 Vdc 1 Collector Current - Continuous IC 500 mAdc EMITTER Total Device Dissipation @ TA = 25°C PD 625 W Derate above 25°C 5.0 mW/°C MARKING Total Device Dissipation @ TC = 25°C PD 1.5 W DIAGRAM Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg -55 to +150 °C Temperature Range MPS 6560 THERMAL CHARACTERISTICS AYWW G TO-92 Characteristic Symbol Max Unit G CASE 29-11 1 Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W STYLE 1 2 3 (Note 1) Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended MPS6560 = Device Code Operating Conditions

5.24. mps651.pdf Size:217K _secos

MPS6595
MPS6595
MPS651 0.625 W, 2 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES G H Switching and Amplifier Applications J A D Collector Millimeter REF. Min. Max. 2 B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 3 E 0.36 0.56 Base F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - 1 J 2.42 2.66 Emitter K 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Base Voltage VCBO 80 V Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 2 A Collector Dissipation Pc 0.625 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector-Base Breakdown Voltage V(BR)CBO 80 - - V IC=100µA, IE = 0

5.25. mps6560-2.pdf Size:349K _cdil

MPS6595
MPS6595
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS MPS6560 NPN MPS6562 PNP TO-92 Plastic Package C B E AudioTransistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 25 V VCEO Collector Emitter Voltage 25 V VEBO Emitter Base Voltage 5.0 V IC Collector Current Continuous 500 mA Power Dissipation at Ta=25?C PD 625 mW Derate Above 25?C 5.0 mW/?C Power Dissipation at Tc=25?C PD 1.5 W Derate Above 25?C 12 mW/?C Operating And Storage Junction Tj, Tstg - 55 to +150 ?C Temperature Range THERMAL CHARACTERISTICS Junction to Case Rth (j-c) 83.3 ?C/W Junction to Ambient in free air *Rth (j-a) 200 ?C/W *Rth (j-a) is measured with the device soldered into a typical printed circuit board ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS Collector Emitter Voltage VCEO IC=1mA, IB=0 25 V Colle

5.26. mps650_51_mps750_51.pdf Size:191K _cdil

MPS6595
MPS6595
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP SILICON PLANAR AMPLIFIER TRANSISTORS MPS650 , MPS651 (NPN) MPS750 , MPS751 (PNP) TO -92 CBE AMPLIFIER TRANSISTORS ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL MPS650 MPS651 UNITS MPS750 MPS751 Collector -Emitter Voltage VCEO 40 60 V Collector -Base Voltage VCBO 60 80 V Emitter -Base Voltage VEBO 5.0 V Collector Current Continuous IC 2.0 A Power Dissipation @Ta=25 degC PD 625 mW 5.0 Derate Above 25deg C mW/deg C Power Dissipation @Tc=25 degC PD 1.5 W 12.0 Derate Above 25deg C mW/deg C Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 83.3 deg C/W Junction to Ambient Rth(j-a) 200 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MPS650 MPS651 UNITS MPS750 MPS751 Collector -Emitter Voltage VCEO* IC=10mA,IB=0 >40 >60 V Collector -Base

5.27. mps6530_31.pdf Size:250K _cdil

MPS6595
MPS6595
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS6530 MPS6531 TO-92 Plastic Package C B E AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 40 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 5 V IC Collector Current Continuous 600 mA Power Dissipation @ Ta=25?C PD 625 mW Derate Above 25?C 5 mW/?C Operating And Storage Junction Tj, Tstg - 55 to +150 Temperature Range THERMAL CHARACTERISTICS Junction to Case Rth (j-c) 83.3 ?C/W Junction to Ambient in free air Rth (j-a) 200 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS VCEO IC=10mA, IB=0 Collector Emitter Voltage 40 V VCBO Collector Base Voltage IC=10µA, IE=0 60 V VEBO Emitter Base Voltage IE=10µA, IC=0 5 V ICBO VCB=40V, IE=0, Collector Cut Off Current 50 nA VCB=40V, IE=

5.28. mps651.pdf Size:350K _kec

MPS6595
MPS6595
SEMICONDUCTOR MPS651 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE B C FEATURES High Voltage : VCEO=60V(Min.). High Current : IC(Max.)=1A. N DIM MILLIMETERS High Transition Frequency : fT=150MHz(Typ.). A 4.70 MAX E K B 4.80 MAX Wide Area of Safe Operation. G C 3.70 MAX D Complementary to MPS751. D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ H J 14.00 + 0.50 K 0.55 MAX F F MAXIMUM RATING (Ta=25 ) L 2.30 M 0.45 MAX CHARACTERISTIC SYMBOL RATING UNIT N 1.00 1 2 3 VCBO Collector-Base Voltage 80 V 1. EMITTER 2. BASE VCEO Collector-Emitter Voltage 60 V 3. COLLECTOR VEBO Emitter-Base Voltage 5 V IC DC 1 Collector Current A TO-92 ICP Pulse 2 PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=50V, IE=0 Collector Cut-off Current - - 100 nA

5.29. mps6520-23.pdf Size:159K _microelectronics

MPS6595
MPS6595

5.30. mps6530-35.pdf Size:133K _microelectronics

MPS6595
MPS6595

5.31. mps6512_mps6515.pdf Size:179K _microelectronics

MPS6595
MPS6595

See also transistors datasheet: MPS6573 , MPS6574 , MPS6575 , MPS6576 , MPS6579 , MPS6580 , MPS6590 , MPS6591 , 2N2905 , MPS6601 , MPS6602 , MPS6651 , MPS6652 , MPS6714 , MPS6715 , MPS6716 , MPS6717 .

Keywords

 MPS6595 Datasheet  MPS6595 Datenblatt  MPS6595 RoHS  MPS6595 Distributor
 MPS6595 Application Notes  MPS6595 Component  MPS6595 Circuit  MPS6595 Schematic
 MPS6595 Equivalent  MPS6595 Cross Reference  MPS6595 Data Sheet  MPS6595 Fiche Technique

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