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MPS6595 Transistor (IC) Datasheet. Cross Reference Search. MPS6595 Equivalent

Type Designator: MPS6595

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.625

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 12

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.15

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 1000

Collector capacitance (Cc), pF: 0.9

Forward current transfer ratio (hFE), min: 110

Noise Figure, dB: -

Package of MPS6595 transistor: TO92

MPS6595 Transistor Equivalent Substitute - Cross-Reference Search

 

MPS6595 PDF:

5.1. mps650re.pdf Size:173K _motorola

MPS6595
MPS6595

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS650/D NPN Amplifier Transistors MPS650 * MPS651 COLLECTOR COLLECTOR 3 3 PNP MPS750 2 2 BASE BASE * MPS751 NPN PNP Voltage and current are 1 1 negative for PNP transistors EMITTER EMITTER *Motorola Preferred Devices MAXIMUM RATINGS MPS650 MPS651 MPS750 MPS751 Rating Symbol Unit Collector–Emitter Voltage VCE 40

5.2. mps6521rev0.pdf Size:551K _motorola

MPS6595
MPS6595

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6521/D COLLECTOR 3 Amplifier Transistors NPN 2 BASE * MPS6521 PNP 1 EMITTER MPS6523 COLLECTOR 3 Voltage and current are negative for PNP transistors 2 BASE *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol NPN PNP Unit Collector–Emitter Voltage VCEO Vdc MPS6521 25 — MPS6523 — 25 Collector–

5.3. mps6571r.pdf Size:279K _motorola

MPS6595
MPS6595

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6571/D Amplifier Transistor NPN Silicon MPS6571 COLLECTOR 3 2 BASE 1 1 2 EMITTER 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 TO–92 (TO–226AA) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 25 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Tota

5.4. mps6530r.pdf Size:304K _motorola

MPS6595
MPS6595

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6530/D Amplifier Transistor MPS6530 NPN Silicon COLLECTOR 3 2 BASE 1 2 1 3 EMITTER CASE 29–04, STYLE 1 MAXIMUM RATINGS TO–92 (TO–226AA) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 600 mAdc T

5.5. mps6560r.pdf Size:69K _motorola

MPS6595
MPS6595

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6560/D Audio Transistor MPS6560 NPN Silicon COLLECTOR 3 2 BASE 1 2 1 3 EMITTER CASE 29–04, STYLE 1 MAXIMUM RATINGS TO–92 (TO–226AA) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Base Voltage VCBO 25 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 500 mAdc Total

5.6. mps6520r.pdf Size:791K _motorola

MPS6595
MPS6595

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6520/D COLLECTOR 3 Amplifier Transistors NPN 2 MPS6520 BASE * MPS6521 1 EMITTER PNP MPS6523 COLLECTOR 3 Voltage and current are negative 2 for PNP transistors BASE *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol NPN PNP Unit Collector–Emitter Voltage VCEO Vdc MPS6520, MPS6521 25 — MPS652

5.7. mps6507r.pdf Size:59K _motorola

MPS6595
MPS6595

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6507/D Amplifier Transistor COLLECTOR MPS6507 NPN Silicon 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 3 Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 30 Vdc CASE 29–04, STYLE 1 TO–92 (TO–226AA) Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc To

5.8. mps651.pdf Size:57K _fairchild_semi

MPS6595
MPS6595

MPS651 Switching and Amplifier Applications TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current 0.8 A PC Collector Dissipation 625 mW TJ Junction Temperature

5.9. mps6562.pdf Size:293K _fairchild_semi

MPS6595
MPS6595

Discrete POWER & Signal Technologies MPS6562 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V V C

5.10. mps6531.pdf Size:292K _fairchild_semi

MPS6595
MPS6595

Discrete POWER & Signal Technologies MPS6531 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Colle

5.11. mps6521.pdf Size:25K _fairchild_semi

MPS6595
MPS6595

MPS6521 NPN General Purpose Amplifier • This device is deisgned for general purpose amplifier applications at collector to 300mA. • Sourced from process 10. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC

5.12. mps6513.pdf Size:126K _fairchild_semi

MPS6595
MPS6595

September 2007 MPS6513 NPN General Purpose Amplifier • This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. • Sourced from Proces 23. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage

5.13. mmbt6515_mps6515.pdf Size:103K _fairchild_semi

MPS6595
MPS6595

MPS6515/MMBT6515 NPN General Purpose Amplifier 3 • This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100mA as a 2 switch and to 100MHz as an amplifier. SOT-23 TO-92 1 Mark: 3J 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol Parameter Value Units

5.14. mps6514.pdf Size:47K _fairchild_semi

MPS6595
MPS6595

MPS6514 NPN General Purpose Amplifier • This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 40

5.15. mps6518.pdf Size:292K _fairchild_semi

MPS6595
MPS6595

Discrete POWER & Signal Technologies MPS6518 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Em

5.16. mps6523.pdf Size:292K _fairchild_semi

MPS6595
MPS6595

Discrete POWER & Signal Technologies MPS6523 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V V Col

5.17. mps6534.pdf Size:292K _fairchild_semi

MPS6595
MPS6595

Discrete POWER & Signal Technologies MPS6534 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V C

5.18. mps6520-mps6521.pdf Size:44K _central

MPS6595
MPS6595

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.19. mps650-mps651-mps750-mps751-cenw650-cenw651-cenw750-cenw751.pdf Size:57K _central

MPS6595
MPS6595

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.20. mps651x_series.pdf Size:111K _central

MPS6595
MPS6595

DATA SHEET NPN PNP MPS6512 MPS6516 MPS6513 MPS6517 MPS6514 MPS6518 MPS6515 MPS6519 COMPLEMENTARY SILICON TRANSISTORS JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS6512 Series (NPN) and MPS6516 Series (PNP) types are molded Epoxy Silicon Small Signal Transistors designed for general-purpose amplifier applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) MPS

5.21. mps650_mps651_mps750_mps751.pdf Size:68K _onsemi

MPS6595
MPS6595

NPN - MPS650, MPS651; PNP - MPS750, MPS751 MPS651 and MPS751 are Preferred Devices Amplifier Transistors Features • Pb-Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCE Vdc COLLECTOR NPN MPS650; MPS750 40 3 MPS651; MPS751 60 1 EMITTER Collector-Base Voltage VCB Vdc 2 MPS650; MPS750 60 BAS

5.22. mps6521_mps6523.pdf Size:166K _onsemi

MPS6595
MPS6595

MPS6521 (NPN) MPS6523 (PNP) MPS6521 is a Preferred Device Amplifier Transistors Features • Voltage and Current are Negative for PNP Transistors http://onsemi.com • Pb-Free Packages are Available* COLLECTOR COLLECTOR MAXIMUM RATINGS 3 3 Rating Symbol NPN PNP Unit 2 2 Collector -Emitter Voltage VCEO Vdc BASE BASE MPS6521 25 - MPS6523 - 25 1 1 Collector -Base Voltage VCBO Vdc

5.23. mps6560-d.pdf Size:43K _onsemi

MPS6595
MPS6595

MPS6560 Audio Transistor NPN Silicon Features • Pb-Free Package is Available* http://onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector -Emitter Voltage VCEO 25 Vdc 2 BASE Collector -Base Voltage VCBO 25 Vdc Emitter -Base Voltage VEBO 5.0 Vdc 1 Collector Current - Continuous IC 500 mAdc EMITTER Total Device Dissipation @ TA = 25°C PD 625 W Derate above 25°

5.24. mps651.pdf Size:217K _secos

MPS6595
MPS6595

MPS651 0.625 W, 2 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES G H Switching and Amplifier Applications J A D Collector Millimeter REF. Min. Max. 2 B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 3 E 0.36 0.56 Base F 0.36 0.51 E C F G

5.25. mps6560-2.pdf Size:349K _cdil

MPS6595
MPS6595

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS MPS6560 NPN MPS6562 PNP TO-92 Plastic Package C B E AudioTransistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 25 V VCEO Collector Emitter Voltage 25 V VEBO Emitter Base Voltage 5.0 V IC Collector Current Contin

5.26. mps6530_31.pdf Size:250K _cdil

MPS6595
MPS6595

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS6530 MPS6531 TO-92 Plastic Package C B E AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 40 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 5 V IC Collector Current Continuo

5.27. mps650_51_mps750_51.pdf Size:191K _cdil

MPS6595
MPS6595

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP SILICON PLANAR AMPLIFIER TRANSISTORS MPS650 , MPS651 (NPN) MPS750 , MPS751 (PNP) TO -92 CBE AMPLIFIER TRANSISTORS ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL MPS650 MPS651 UNITS MPS750 MPS751 Collector -Emitter Voltage VCEO 40 60 V Collector -Base Voltage VCBO 60 80 V Emitter -Base Volta

5.28. mps651.pdf Size:350K _kec

MPS6595
MPS6595

SEMICONDUCTOR MPS651 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE B C FEATURES High Voltage : VCEO=60V(Min.). High Current : IC(Max.)=1A. N DIM MILLIMETERS High Transition Frequency : fT=150MHz(Typ.). A 4.70 MAX E K B 4.80 MAX Wide Area of Safe Operation. G C 3.70 MAX D Complementary to MPS751. D 0.45 E 1.00 F 1.27 G 0.

5.29. mps6530-35.pdf Size:133K _microelectronics

MPS6595
MPS6595

5.30. mps6512_mps6515.pdf Size:179K _microelectronics

MPS6595
MPS6595

5.31. mps6520-23.pdf Size:159K _microelectronics

MPS6595
MPS6595

5.32. mps651.pdf Size:159K _first_silicon

MPS6595
MPS6595

SEMICONDUCTOR MPS651 TECHNICAL DATA MPS651 TRANSISTOR (NPN) B C FEATURES General Purpose Amplifier DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) G 0.85 H 0.45 _ H J 14.00 + 0.50 Symbol Parameter Value Unit L 2.30 F F M 0.51 MAX VCBO Collector-Base Voltage 80 V VCEO Collector-Em

See also transistors datasheet: MPS6573 , MPS6574 , MPS6575 , MPS6576 , MPS6579 , MPS6580 , MPS6590 , MPS6591 , 2N2905 , MPS6601 , MPS6602 , MPS6651 , MPS6652 , MPS6714 , MPS6715 , MPS6716 , MPS6717 .

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