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MPSA13 Transistor (IC) Datasheet. Cross Reference Search. MPSA13 Equivalent

Type Designator: MPSA13

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.33

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 10

Maximum collector current |Ic max|, A: 0.3

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 125

Collector capacitance (Cc), pF: 10

Forward current transfer ratio (hFE), min: 5

Noise Figure, dB: -

Package of MPSA13 transistor: TO92

MPSA13 Transistor Equivalent Substitute - Cross-Reference Search

MPSA13 PDF:

1.1. mpsa13_mpsa14.pdf Size:225K _motorola

MPSA13
MPSA13

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA13/D Darlington Transistors MPSA13 NPN Silicon MPSA14* *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 TO–92 (TO–226AA) Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 10 Vdc Collector C

1.2. mpsa13.pdf Size:37K _fairchild_semi

MPSA13
MPSA13

MPSA13 MMBTA13 PZTA13 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Vol

1.3. mpsa13_mpsa14_to-92.pdf Size:306K _mcc

MPSA13
MPSA13

MCC MPSA13 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MPSA14 CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Capable of 1.5Watts of Power Dissipation. NPN Silicon • Collector-current 500mA • Collector-base Voltage 30V Darlington Transistor • Operating and storage junction temperature range: -55OC to +150OC • Epoxy meet

1.4. mpsa13.pdf Size:10K _utc

MPSA13
MPSA13

UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR 1 DESCRIPTION TO-92 The UTC MPSA13 is a darlington transistor. 1 FEATURES *Collector-Emitter Voltage: Vces = 30V SOT-89 *Collector Dissipation : Pc ( mas ) = 625 mW 1 SOT-23 TO-92 1:EMITTER 2:BASE 3:COLLECTOR SOT-89 1:EMITTER 2:COLLECTOR 3:BASE SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operati

1.5. mpsa13-14.pdf Size:167K _secos

MPSA13
MPSA13

MPSA13 / 14 NPN Epitaxial Silicon Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Darlington TRANSISTOR 1 Power dissipation 2 3 PCM: 0.625 W (Tamb=25?) 1 2 3 Collector current 1. EMITTER ICM: 0.5 A 2. BASE Collector-base voltage 3 . COLLECTOR V(BR)CBO: 30 V Operating and storage junction temperature range TJ,

1.6. mpsa13_14.pdf Size:293K _cdil

MPSA13
MPSA13

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS MPSA 13 MPSA 14 TO-92 CBE C C B B E E ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCES 30 V Collector -Base Voltage VCBO 30 V Emitter -Base Voltage VEBO 10 V Collector Current -Continuous IC 500 mA Power Diss

1.7. mpsa13_mpsa14.pdf Size:164K _kec

MPSA13
MPSA13

SEMICONDUCTOR MPSA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. B C N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO Collector-Base Voltage 30 V K 0.55 MAX F F L 2.30 VCES Collector-E

1.8. mpsa13-14.pdf Size:487K _wietron

MPSA13
MPSA13

MPSA13/MPSA14 Plastic-Encapsulate Transistros NPN Darlington Transistor 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 TO-92 Maximum Ratings(TA=25 C Unless O therwise Specified) Rating Symbol Value Unit VCEO Collector-Emitter Voltage 30 V VCBO Collector-base Voltage 30 V VEBO 10 V Emitter-base Voltage mA Collector Current IC 500 Total Power Dissipation(TA=25?C) 0.625 PD W Op

1.9. mpsa13.pdf Size:202K _first_silicon

MPSA13
MPSA13

SEMICONDUCTOR MPSA13 TECHNICAL DATA MPSA13 TRANSISTOR (NPN) B C FEATURES Darlington Transistors DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) G 0.85 H 0.45 _ H J 14.00 + 0.50 Symbol Parameter Value Units L 2.30 F F VCBO Collector-Base Voltage 30 V M 0.51 MAX VCEO Collector-Emitter V

See also transistors datasheet: MPS930 , MPS930A , MPS930R , MPSA05 , MPSA06 , MPSA09 , MPSA10 , MPSA12 , 2N4401 , MPSA14 , MPSA16 , MPSA17 , MPSA18 , MPSA20 , MPSA25 , MPSA26 , MPSA27 .

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