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MPSW45A Transistor Datasheet. Parameters and Characteristics.

Type Designator: MPSW45A

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 15

Noise Figure, dB: -

Package of MPSW45A transistor: TO92

MPSW45A Equivalent Transistors - Cross-Reference Search

MPSW45A PDF doc:

4.1. mpsw45re.pdf Size:228K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSW45/D One Watt Darlington Transistors NPN Silicon MPSW45 COLLECTOR 3 MPSW45A* BASE *Motorola Preferred Device 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol MPSW45 MPSW45A Unit Collector–Emitter Voltage VCES 40 50 Vdc 1 2 3 Collector–Base Voltage VCBO 50 60 Vdc Emitter–Base Voltage VEBO 12 12 Vdc CASE 29–05, STYLE 1 TO–92 (TO–226AE) Collector Current — Continuous IC 1.0 1.0 Adc Total Device Dissipation @ TA = 25°C PD 1.0 Watts Derate above 25°C 8.0 mW/°C Total Device Dissipation @ TC = 25°C PD 2.5 Watts Derate above 25°C 20 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 125 °C/W Thermal Resistance, Junction to Case RqJC 50 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Bre

5.1. mpsw42re.pdf Size:140K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSW42/D One Watt High Voltage Transistor MPSW42 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 2 3 1 EMITTER CASE 29–05, STYLE 1 MAXIMUM RATINGS TO–92 (TO–226AE) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 300 Vdc Collector–Base Voltage VCBO 300 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C PD 1.0 Watt Derate above 25°C 8.0 mW/°C Total Device Dissipation @ TC = 25°C PD 2.5 Watts Derate above 25°C 20 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 125 °C/W Thermal Resistance, Junction to Case RqJC 50 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) V(BR)CE

5.2. mpsw42.pdf Size:96K _onsemi

MPSW42 One Watt High Voltage Transistor NPN Silicon http://onsemi.com Features • Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 300 Vdc Collector-Base Voltage VCBO 300 Vdc 1 EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C PD 1.0 W Derate above 25°C 8.0 mW/°C Total Device Dissipation @ TC = 25°C PD 2.5 W Derate above 25°C 20 mW/°C TO-92 1 WATT (TO-226) Operating and Storage Junction TJ, Tstg -55 to +150 °C CASE 29-10 1 Temperature Range 1 2 2 STYLE 1 3 3 THERMAL CHARACTERISTICS STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Characteristic Symbol Max Unit AMMO PACK Thermal Resistance, Junction-to-Ambient RqJA 125 °C/W MARKING DIAGRAM Thermal Resistance, Junction-to-Case RqJC 50 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum MPS Ratings are stress ratings only. Functional op

See also transistors datasheet: MPSW06 , MPSW07 , MPSW10 , MPSW13 , MPSW14 , MPSW42 , MPSW43 , MPSW45 , 2N3773 , MPSW51 , MPSW51A , MPSW55 , MPSW56 , MPSW57 , MPSW60 , MPSW63 , MPSW64 .

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