MQ5910 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MQ5910

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 125

Transition frequency (ft), MHz: 700

Collector capacitance (Cc), pF: 3

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of MQ5910 transistor: TO86

MQ5910 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: MQ5550R , MQ5551 , MQ5551R , MQ5816 , MQ5855 , MQ5856 , MQ5857 , MQ5858 , KD502 , MQ6076 , MQ918 , MQ918R , MQ930 , MQ930R , MRA1000-14L , MRA1000-7 , MRF2001 .

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