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MRF2005B Transistor Datasheet. Parameters and Characteristics.

Type Designator: MRF2005B

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 25

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of MRF2005B transistor: X82D

MRF2005B Equivalent Transistors - Cross-Reference Search

MRF2005B PDF doc:

4.1. mrf2000-.pdf Size:111K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2000–5L/D The RF Line Microwave Linear MRF2000-5L Power Transistor Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. • Designed for Class A or AB, Common Emitter Power Amplifiers 7.0–8.0 dB GAIN • Specified 20 Volt, 2.0 GHz Characteristic Power Gain — USABLE 1.0–2.0 GHz 7.0 dB Min @ 5.0 W Pout 5.0 WATTS • Built In Matching Network for Broadband Operation MICROWAVE • Gold Metallization for Improved Reliability LINEAR POWER TRANSISTOR • Diffused Ballast Resistors • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 22 Vdc Collector–Base Voltage VCES 50 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Continuous IC 2.0 Adc Operating Junction Temperature TJ 200 °C CASE 360A–01, STYLE 2 Storage Temper

4.2. mrf20060rev0m.pdf Size:109K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20060/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060 The MRF20060 and MRF20060S are designed for broadband commercial MRF20060S and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for large–signal, common emitter class A and class AB amplifier applications. These devices are suitable for frequency modulated, amplitude modulated and multi–carrier base station RF power amplifiers. 60 W, 2000 MHz • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts RF POWER Output Power — 60 Watts (PEP) BROADBAND Power Gain — 9 dB NPN BIPOLAR Efficiency — 33% Intermodulation Distortion — –30 dBc • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellent Thermal Stability • Capable of Handling 3:1 VSWR @ 26 Vd

4.3. mrf20030rev1.pdf Size:111K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20030/D The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen- cies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class A and class AB 30 W, 2.0 GHz amplifier applications. Suitable for frequency modulated, amplitude modulated NPN SILICON and multi–carrier base station RF power amplifiers. BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics Output Power — 30 Watts (PEP) Power Gain — 9.8 dB Efficiency — 34% Intermodulation Distortion — –28 dBc • Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics Output Power — 30 Watts Power Gain — 10.5 dB Efficiency — 40% • Excellent Thermal Stability CASE 395D–03, STYLE 1 • Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP) Output Pow

See also transistors datasheet: MQ918R , MQ930 , MQ930R , MRA1000-14L , MRA1000-7 , MRF2001 , MRF2001B , MRF2005 , OC44 , MRF2010 , MRF2010B , MRF207 , MRF208 , MRF209 , MRF212 , MRF215 , MRF216 .

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