2N4890 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N4890

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 160

Collector capacitance (Cc), pF: 15

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of 2N4890 transistor: TO5

2N4890 Equivalent Transistors - Cross-Reference Search

2N4890 PDF document for downloads:

5.1. 2n4898-99_2n4900.pdf Size:180K _mospec

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5.2. 2n4896.pdf Size:11K _semelab

2N4896 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 60V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can be processed in accordance with the 0.74 (0.029) requirements of BS, CECC and JAN, 1.14 (0.045) 0.71 (0.028) JANTX, JANTXV and JANS specifications 0.86 (0.034) 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 60 V IC(CONT) 5 A hFE @ 2/2 (VCE / IC) 10 - ft 50M Hz PD 0.8 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Informa

5.3. 2n4895.pdf Size:11K _semelab

2N4895 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 60V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can be processed in accordance with the 0.74 (0.029) requirements of BS, CECC and JAN, 1.14 (0.045) 0.71 (0.028) JANTX, JANTXV and JANS specifications 0.86 (0.034) 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 60 V IC(CONT) 5 A hFE @ 2/2 (VCE / IC) 40 - ft 50M Hz PD 0.8 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Informa

5.4. 2n4897.pdf Size:11K _semelab

2N4897 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can be processed in accordance with the 0.74 (0.029) requirements of BS, CECC and JAN, 1.14 (0.045) 0.71 (0.028) JANTX, JANTXV and JANS specifications 0.86 (0.034) 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 80 V IC(CONT) 5 A hFE @ 2/2 (VCE / IC) 40 - ft 50M Hz PD 0.8 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Informa

5.5. 2n4898_2n4899_2n4900.pdf Size:126K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ Ў¤ With TO-66 package Ў¤ Low collector saturation voltage Ў¤ Excellent safe operating area Ў¤ 2N4900 complement to type 2N4912 APPLICATIONS Ў¤ Designed for driver circuits,switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N4898 2N4899 2N4900 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO I VCEO E SEM HANG NC Collector-base voltage 2N4899 2N4900 2N4898 2N4899 Collector-emitter voltage 2N4900 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25Ўж PARAMETER 2N4898 Open emitter CTOR NDU ICO CONDITIONS VALUE -40 -60 -80 -40 -60 -80 UNIT V Open base V VEBO IC ICM IB PD Tj Tstg Open collector -5 -1.0 -4.0 -1.0 25 150 -65~200 Ўж Ўж V A A A W

See also transistors datasheet: 2N4875 , 2N4876 , 2N4877 , 2N4878 , 2N4879 , 2N4880 , 2N4888 , 2N4889 , OC44 , 2N4890S , 2N4895 , 2N4896 , 2N4897 , 2N4898 , 2N4899 , 2N49 , 2N4900 .

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