MRF331 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MRF331

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 27

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 1.1

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of MRF331 transistor: X54D

MRF331 Equivalent Transistors - Cross-Reference Search

MRF331 PDF document for downloads:

5.1. mrf338rev2.pdf Size:132K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF338/D The RF Line NPN Silicon RF Power Transistor MRF338 Designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50% (Min) 80 W, 400 to 512 MHz CONTROLLED “Q” • Built–In Matching Network for Broadband Operation BROADBAND RF POWER • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR TRANSISTOR • Gold Metallization System for High Reliability Applications NPN SILICON CASE 333–04, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 30 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 4 Vdc Collector Current — Continuous IC 9 Adc Collector Current — Peak 12 Total Device Dissipation @ TC = 25°C (1) PD 250 Watts Derate above 25°C 1.43 W/°C Storage Temperature Range Tstg –65 to +1

See also transistors datasheet: MRF316 , MRF317 , MRF321 , MRF323 , MRF325 , MRF326 , MRF327 , MRF328 , BC337 , MRF340 , MRF342 , MRF3866R2 , MRF401 , MRF402 , MRF404 , MRF406 , MRF420 .

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