MRF428 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MRF428

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 320

Maximum collector-base voltage |Ucb|, V: 110

Maximum collector-emitter voltage |Uce|, V: 55

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 20

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of MRF428 transistor:

MRF428 Equivalent Transistors - Cross-Reference Search

MRF428 PDF document for downloads:

5.1. mrf429re.pdf Size:141K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF429/D The RF Line NPN Silicon MRF429 RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) 150 W (LINEAR), 30 MHz Minimum Gain = 13 dB RF POWER Efficiency = 45% TRANSISTOR • Intermodulation Distortion @ 150 W (PEP) — NPN SILICON IMD = –32 dB (Max) • Diffused Emitter Resistors for Superior Ruggedness • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR @ 150 W CW CASE 211–11, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 50 Vdc Collector–Base Voltage VCBO 100 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 16 Adc Withstand Current — 10 s — 20 Adc Total Device Dissipation @ TC = 25°C PD 233 Watts Derate above 25°C 1.33 W/°C Storage Tempera

5.2. mrf421re.pdf Size:99K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF421/D The RF Line NPN Silicon MRF421 RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) 100 W (PEP), 30 MHz Minimum Gain = 10 dB RF POWER Efficiency = 40% TRANSISTORS • Intermodulation Distortion @ 100 W (PEP) — NPN SILICON IMD = –30 dB (Min) • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR CASE 211–11, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 45 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 20 Adc Withstand Current — 10 s — 30 Adc Total Device Dissipation @ TC = 25°C PD 290 Watts Derate above 25°C 1.66 W/°C Storage Temperature Range Tstg –65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case

5.3. mrf421rev1.pdf Size:102K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF421/D The RF Line NPN Silicon MRF421 RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) 100 W (PEP), 30 MHz Minimum Gain = 10 dB RF POWER Efficiency = 40% TRANSISTORS • Intermodulation Distortion @ 100 W (PEP) — NPN SILICON IMD = –30 dB (Min) • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR CASE 211–11, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 45 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 20 Adc Withstand Current — 10 s — 30 Adc Total Device Dissipation @ TC = 25°C PD 290 Watts Derate above 25°C 1.66 W/°C Storage Temperature Range Tstg –65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case

5.4. mrf422re.pdf Size:97K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF422/D The RF Line NPN Silicon MRF422 RF Power Transistor Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) 150 W (PEP), 30 MHz Minimum Gain = 10 dB RF POWER Efficiency = 40% TRANSISTORS • Intermodulation Distortion @ 150 W (PEP) — NPN SILICON IMD = –30 dB (Min) • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR CASE 211–11, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 85 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 20 Adc Withstanding Current — 10 s — 30 Adc Total Device Dissipation @ TC = 25°C PD 290 Watts Derate above 25°C 1.66 W/°C Storage Temperature Range Tstg –65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Cas

5.5. mrf426re.pdf Size:112K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF426/D The RF Line NPN Silicon MRF426 RF Power Transistor . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W (PEP) 25 W (PEP), 30 MHz Minimum Gain = 22 dB RF POWER Efficiency = 35% TRANSISTOR • Intermodulation Distortion @ 25 W (PEP) — NPN SILICON IMD = –30 dB (Max) • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Class A and AB Characterization • BLX 13 Equivalent CASE 211–07, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 35 Vdc Collector–Base Voltage VCBO 65 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 3.0 Adc Withstand Current — 5 s — 6.0 Adc Total Device Dissipation @ TC = 25°C (1) PD 70 Watts Derate above 25°C 0.4 W/°C Storage Temperature Range Tstg –65 to +150 °C THERMAL CHARACTERISTICS

5.6. mrf422.pdf Size:230K _macom

MRF422 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 150W(PEP), 30MHz, 28V Designed primarily for applications as a high–power linear amplifier from 2.0 Product Image to 30 MHz. • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP) Minimum gain = 10 dB Efficiency = 40% • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.) • 100% tested for load mismatch at all phase angles with 30:1 VSWR CASE 211–11, STYLE 1 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding

5.7. mrf426.pdf Size:267K _macom

MRF426 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 05202009 25W(PEP), 30MHz, 28V Designed for high gain driver and output linear amplifier stages in 1.5 to Product Image 30 MHz HF/SSB equipment. • Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP) Minimum gain = 22 dB Efficiency = 35% • Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max) • 100% tested for load mismatch at all phase angles with 30:1 VSWR • Class A and AB characterization • BLX 13 equivalent CASE 211–07, STYLE 1 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.

See also transistors datasheet: MRF402 , MRF404 , MRF406 , MRF420 , MRF421 , MRF422 , MRF426 , MRF427 , 5609 , MRF432 , MRF433 , MRF4427 , MRF449 , MRF450 , MRF452 , MRF453 , MRF454 .

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