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MRF502 Transistor (IC) Datasheet. Cross Reference Search. MRF502 Equivalent

Type Designator: MRF502

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 35

Maximum collector-emitter voltage |Uce|, V: 15

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.05

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 800

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of MRF502 transistor: TO72

MRF502 Transistor Equivalent Substitute - Cross-Reference Search

MRF502 PDF:

5.1. mrf5007r.pdf Size:158K _motorola

MRF502
MRF502

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N–Channel Enhancement–Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large–signal, common source

5.2. mrf5003r.pdf Size:206K _motorola

MRF502
MRF502

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5003/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MRF5003 The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in

5.3. mrf5015r.pdf Size:138K _motorola

MRF502
MRF502

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mob

5.4. mrf5015rev6d.pdf Size:154K _motorola

MRF502
MRF502

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mob

5.5. mrf5007rev2.pdf Size:161K _motorola

MRF502
MRF502

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N–Channel Enhancement–Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large–signal, comm

5.6. mrf5035r.pdf Size:142K _motorola

MRF502
MRF502

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5035/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MRF5035 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mob

See also transistors datasheet: MRF460 , MRF463 , MRF464 , MRF472 , MRF475 , MRF476 , MRF485 , MRF501 , BD135 , MRF515 , MRF517 , MRF5174 , MRF5175 , MRF5176 , MRF5177 , MRF519 , MRF5211 .

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