MRF904 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MRF904

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.03

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 3500

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 0

Noise Figure, dB: -

Package of MRF904 transistor: TO72

MRF904 Equivalent Transistors - Cross-Reference Search

MRF904 PDF document for downloads:

1.1. mrf9045.pdf Size:392K _freescale

Document Number: MRF9045 Freescale Semiconductor Rev. 11, 9/2008 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF9045LR1 Designed for broadband commercial and industrial applications with frequen- cies up to 1000 MHz. The high gain and broadband performance of these MRF9045LSR1 devices make them ideal for large-signal, common-source amplifier applica- tions in 28 volt base station equipment. • Typical Two-Tone Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 18.8 dB Efficiency — 42% 945 MHz, 45 W, 28 V IMD — -32 dBc LATERAL N-CHANNEL • Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW BROADBAND Output Power RF POWER MOSFETs Features • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • Low Gold Plating Thickness on Leads. L Suffix Indicates

5.1. mmbr901lt1_mps901_mrf901_mrf9011lt1.pdf Size:267K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR901LT1/D The RF Line MMBR901LT1, T3 NPN Silicon MPS901 MRF901 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. • High Current–Gain — Bandwidth Product IC = 30 mA SURFACE MOUNTED • Low Noise Figure @ f = 1.0 GHz — HIGH–FREQUENCY NF(matched) = 1.8 dB (Typ) (MRF9011LT1) TRANSISTOR NF(matched) = 1.9 dB (Typ) (MMBR901LT1, T3) NPN SILICON • High Power Gain — Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1) Gpe(matched) = 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3) • Guaranteed RF Parameters (MRF9011LT1) • Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance Lower Package Parasitics High Gain CASE 318–08, STYLE 6 • Available in tape and reel packaging options: SOT–23 T1 suffix = 3,000 units per reel LOW PROFILE, MMBR901LT1, T3 T

5.2. mrf9060n.pdf Size:449K _freescale

Document Number: MRF9060N Freescale Semiconductor Rev. 13, 6/2009 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequen- MRF9060NR1 cies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. • Typical Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 18.0 dB 945 MHz, 60 W, 26 V Efficiency — 40% (Two Tones) LATERAL N-CHANNEL IMD — -31.5 dBc BROADBAND • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW RF POWER MOSFET Output Power Features • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • Integrated ESD Protection • 200_C Capable Plastic Package • N Suffix Indicates Lead-Free Terminations. RoHS Compliant. • TO-270-2 Available in Tape and Reel

5.3. mrf9030.pdf Size:351K _freescale

Document Number: MRF9030 Freescale Semiconductor Rev. 8, 9/2008 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequen- MRF9030LR1 cies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. • Typical Two-Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB 945 MHz, 30 W, 26 V Efficiency — 41.5% LATERAL N-CHANNEL IMD — -32.5 dBc BROADBAND • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW RF POWER MOSFET Output Power Features • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ? Nominal. • RoHS

5.4. mrf9085.pdf Size:331K _freescale

Document Number: MRF9085 Freescale Semiconductor Rev. 11, 5/2006 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF9085LR3 Designed for broadband commercial and industrial applications with MRF9085LSR3 frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 880 MHz, 90 W, 26 V Output Power — 20 Watts Power Gain — 17.9 dB LATERAL N-CHANNEL Efficiency — 28% RF POWER MOSFETs Adjacent Channel Power — 750 kHz: -45.0 dBc @ 30 kHz BW 1.98 MHz: -60.0 dBc @ 30 kHz BW • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity CASE 465-06, STYLE 1 NI-780 •

5.5. mrf9080.pdf Size:481K _freescale

Document Number: MRF9080 Freescale Semiconductor Rev. 6, 5/2006 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF9080LR3 Designed for GSM 900 MHz frequency band, the high gain and broadband MRF9080LSR3 performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB 921-960 MHz, 75 W, 26 V Efficiency @ P1db: 55% LATERAL N-CHANNEL • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW RF POWER MOSFETs Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters CASE 465-06, STYLE

5.6. mrf9060.pdf Size:365K _freescale

Document Number: MRF9060 Freescale Semiconductor Rev. 9, 5/2006 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF9060LR1 Designed for broadband commercial and industrial applications with frequen- cies up to 1000 MHz. The high gain and broadband performance of these MRF9060LSR1 devices make them ideal for large-signal, common-source amplifier applica- tions in 26 volt base station equipment. • Typical Two-Tone Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 17 dB Efficiency — 40% 945 MHz, 60 W, 26 V IMD — -31 dBc LATERAL N-CHANNEL • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW BROADBAND Output Power RF POWER MOSFETs Features • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ

5.7. mrf9002nr2.pdf Size:394K _freescale

Document Number: MRF9002NR2 Freescale Semiconductor Rev. 8, 5/2006 Technical Data RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET MRF9002NR2 Designed for broadband commercial and industrial applications with frequen? cies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. The device is in a PFP-16 Power Flat Pack package 1000 MHz, 2 W, 26 V which gives excellent thermal performances through a solderable backside LATERAL N-CHANNEL contact. BROADBAND RF POWER MOSFET • Typical Performance at 960 MHz, 26 Volts Output Power — 2 Watts Per Transistor Power Gain — 18 dB Efficiency — 50% 16 • Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power 1 Features CASE 978-03 PLASTIC • Designed for Maximum Gain and Insertion Phase Flatness PFP-16 • Excellent Thermal Stability • Characterized with Serie

See also transistors datasheet: MRF840 , MRF842 , MRF844 , MRF846 , MRF901 , MRF9011LT1 , MRF901LT1 , MRF902 , BC157 , MRF905 , MRF912 , MRF914 , MRF9331LT1 , MRF941 , MRF9411BLT1 , MRF9411BLT3 , MRF9411LT1 .

Keywords