MRF9331LT1 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MRF9331LT1

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.05

Maximum collector-base voltage |Ucb|, V: 15

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.002

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 5000

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of MRF9331LT1 transistor: SOT143

MRF9331LT1 Equivalent Transistors - Cross-Reference Search

MRF9331LT1 PDF document for downloads:

2.1. mrf9331l.pdf Size:99K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF9331LT1/D The RF Line NPN Silicon MRF9331LT1 High-Frequency Transistor Designed primarily for use in low power amplifiers to 1.0 GHz. Ideal for pagers and other battery operated systems where low power consumption is critical. • Low Power Consumption Characterized for IE = 0.1 to 1.0 mA IC = 1.0 mA SURFACE MOUNTED • High Current–Gain — Bandwidth Product — HIGH–FREQUENCY fT = 5.0 GHz (Typ) @ IC = 1.0 mAdc TRANSISTOR • Low Noise Figure and High Power Gain @ f = 1.0 GHz — NPN SILICON NF(matched) = 2.5 dB (Typ) GNF(matched) = 12.5 dB (Typ) • Guaranteed RF Parameters • Surface Mounted SOT–143 Offers Improved RF Performance Lower Package Parasitics High Gain • Available in tape and reel packaging: T1 suffix = 3,000 units per reel CASE 318A–05, STYLE 1 SOT–143 LOW PROFILE MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 8.0 Vdc Collector–Base Voltage VCBO 15 Vdc Emitter–B

See also transistors datasheet: MRF901 , MRF9011LT1 , MRF901LT1 , MRF902 , MRF904 , MRF905 , MRF912 , MRF914 , AD149 , MRF941 , MRF9411BLT1 , MRF9411BLT3 , MRF9411LT1 , MRF9411LT3 , MRF947AT1 , MRF947AT3 , MRF947BT1 .

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