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MRF957T1 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MRF957T1

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.227

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 10

Maximum emitter-base voltage |Ueb|, V: 1.5

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 8000

Collector capacitance (Cc), pF: 1

Forward current transfer ratio (hFE), min: 75

Noise Figure, dB: -

Package of MRF957T1 transistor: SOT23

MRF957T1 Equivalent Transistors - Cross-Reference Search

MRF957T1 PDF doc:

4.1. mmbr951_mrf951_mrf957_mrf9511.pdf Size:330K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR951ALT1/D The RF Line MMBR951 NPN Silicon MRF951 Low Noise, High-Frequency MRF957 Transistors MRF9511 Designed for use in high gain, low noise small–signal amplifiers. This series SERIES features excellent broadband linearity and is offered in a variety of packages. • Fully Implanted Base and Emitter Structure • 18 Finger, 1.25 Micron Geometry with Gold Top Metal IC = 100 mA LOW NOISE • Gold Sintered Back Metal HIGH–FREQUENCY • Available in tape and reel packaging options: TRANSISTORS T1 suffix = 3,000 units per reel CASE 318–08, STYLE 6 SOT–23 LOW PROFILE MMBR951LT1, MMBR951ALT1 CASE 317–01, STYLE 2 MACRO–X MRF951 CASE 419–02, STYLE 3 MRF957T1 CASE 318A–05, STYLE 1 SOT–143 LOW PROFILE MRF9511LT1, MRF9511ALT1 REV 7 MOTOROLA RF DEVICE DATA © Motorola, Inc. 1995 MMBR951 MRF951 MRF957 MRF9511 SERIES 1 MAXIMUM RATINGS Rating Symbol MRF951 MMBR951LT1 MRF9511LT1 MRF957T1 Unit Collecto

5.1. mrf959t1rev0.pdf Size:171K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF959T1/D The RF Line MRF959T1 NPN Silicon Low Noise Transistors Motorola’s MRF959 is a high performance silicon NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF959 is well suited ICmax = 100 mA for low voltage applications. This device features a 9 GHz DC current LOW NOISE gain–bandwidth product with excellent linearity. TRANSISTORS • Low Noise Figure, NFmin = 1.3 dB (Typ) @ 1 GHz @ 5 mA • High Current Gain–Bandwidth Product, ft = 9 GHz @ 30 mA • Maximum Available Gain, MAG = 17 dB (Typ) @ 1 GHz @ 15 mA • Output Third Order Intercept, OIP3 = +30 dBm @ 1 GHz @ 30 mA • Fully Ion–Implanted with Gold Metallization and Nitride Passivation • Available in Tape and Reel Packaging Options: T1 Suffix = 3,000 Units per Reel CASE 463–01, STYLE 1 (SC–90) MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 10 Vdc Collector–Base Voltage VCBO 20 Vdc Emitte

See also transistors datasheet: MRF947AT3 , MRF947BT1 , MRF947BT3 , MRF947RT3 , MRF947T1 , MRF947T3 , MRF9511ALT1 , MRF9511LT1 , AC128 , MRF962 , MRF965 , MSC80185 , MSC80186 , MSC80195 , MSC80196 , MSC80197 , MSC82040 .

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