MSC80197 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MSC80197

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 3.5

Maximum collector current |Ic max|, A: 0.7

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 3200

Collector capacitance (Cc), pF: 7

Forward current transfer ratio (hFE), min: 15

Noise Figure, dB: -

Package of MSC80197 transistor: SO11

MSC80197 Equivalent Transistors - Cross-Reference Search

MSC80197 PDF document for downloads:

1.1. msc80197.pdf Size:123K _st

MSC80197 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS .EMITTER BALLASTED .CLASS A LINEAR OPERATION .COMMON EMITTER .VSWR CAPABILITY 15:1 @ RATED CONDITIONS .ft 3.2 GHz TYPICAL .NOISE FIGURE 12.5 dB @ 2 GHz .250 2LFL (S011) .P 31.7 dBm MIN. @ 2.0 GHz = OUT hermetically sealed ORDER CODE BRANDING MSC80197 80197 PIN CONNECTION DESCRIPTION The MSC80197 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A 1. Collector 3. Base linear applications to provide high gain and high 2. Emitter 4. Emitter output power at the 1.0 dB compression point. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit P Power Dissipation (see Safe Area) — W DISS I Device Bias Current 700 mA C V Collector-Emitter Bias Voltage* 20 V CE °C T Junction Temperature 200 J °C T Storage Temperature - 65 to +200 STG THERMAL DATA °C/W R Junction-Case Thermal Resistance* 8.5

3.1. msc80195.pdf Size:108K _st

MSC80195 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS .EMITTER BALLASTED .CLASS A LINEAR OPERATION .COMMON EMITTER .VSWR CAPABILITY 20:1 @ RATED CONDITIONS .ft 3.2 GHz TYPICAL .NOISE FIGURE 12.0 dB @ 2 GHz .250 2LFL (S011) .P 28 dBm MIN. @ 2.0 GHz = OUT hermetically sealed ORDER CODE BRANDING MSC80195 80195 PIN CONNECTION DESCRIPTION The MSC80195 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A 1. Collector 3. Baser linear applications to provide high gain and high 2. Emitter 4. Emitter output power at the 1.0 dB compression point. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit P Power Dissipation (see Safe Area) — W DISS I Device Bias Current 300 mA C V Collector-Emitter Bias Voltage* 20 V CE °C T Junction Temperature 200 J °C T Storage Temperature - 65 to +200 STG THERMAL DATA °C/W R Junction-Case Thermal Resistance* 35 TH

3.2. msc80196.pdf Size:108K _st

MSC80196 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS .EMITTER BALLASTED .CLASS A LINEAR OPERATION .COMMON EMITTER .VSWR CAPABILITY 15:1 @ RATED CONDITIONS .ft 3.2 GHz TYPICAL .NOISE FIGURE 12.5 dB @ 2 GHz .250 2LFL (S011) .P 30.0 dBm MIN. = OUT hermetically sealed ORDER CODE BRANDING MSC80196 80196 PIN CONNECTION DESCRIPTION The MSC80196 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A 1. Collector 3. Base linear applications to provide high gain and high 2. Emitter 4. Emitter output power at the 1.0 dB compression point. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit P Power Dissipation (see Safe Area) — W DISS I Device Bias Current 500 mA C V Collector-Emitter Bias Voltage* 20 V CE °C T Junction Temperature 200 J °C T Storage Temperature - 65 to +200 STG THERMAL DATA °C/W R Junction-Case Thermal Resistance* 17 TH(j-c) *A

See also transistors datasheet: MRF9511LT1 , MRF957T1 , MRF962 , MRF965 , MSC80185 , MSC80186 , MSC80195 , MSC80196 , 2N3906 , MSC82040 , MSC82100 , MST7502 , MT0402-1 , MT0404 , MT0404-1 , MT0411 , MT0412 .

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