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MUN2213LT2 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MUN2213LT2

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of MUN2213LT2 transistor: SOT23

MUN2213LT2 Equivalent Transistors - Cross-Reference Search

MUN2213LT2 PDF doc:

4.1. mun2211t.pdf Size:263K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MUN2211T1/D Bias Resistor Transistor MUN2211T1 NPN Silicon Surface Mount Transistor with SERIES Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components NPN SILICON by integrating them into a single device. The use of a BRT can reduce both system BIAS RESISTOR cost and board space. The device is housed in the SC–59 package which is designed TRANSISTOR for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space PIN3 • Reduces Component Count COLLECTOR (OUTPUT) • The SC–59 package can be soldered using wave or reflow. 3 The modifie

4.2. mmun2211lt1-d.pdf Size:171K _onsemi

MMUN2211LT1G Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http://onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter PIN 3 resistor. The BRT eliminates these individual components by COLLECTOR integrating them into a single device. The use of a BRT can reduce R1 (OUTPUT) both system cost and board space. The device is housed in the PIN 1 R2 SOT-23 package which is designed for low power surface mount BASE PIN 2 applications. (INPUT) EMITTER (GROUND) Features • Simplifies Circuit Design MARKING DIAGRAM • Reduces Board Space and Component Count • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant A8x M G SOT-23 G CASE 318 MAXIMUM RATI

4.3. mun2211t1.pdf Size:160K _onsemi

MUN2211T1 Series Preferred Devices Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http://onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter NPN SILICON resistor. The BRT eliminates these individual components by BIAS RESISTOR integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TRANSISTORS SC-59 package which is designed for low power surface mount applications. PIN 3 Features COLLECTOR PIN 2 • Simplifies Circuit Design R1 (OUTPUT) BASE • Reduces Board Space (INPUT) R2 • Reduces Component Count PIN 1 EMITTER • Moisture Sensitivity Level: 1 (GROUND) • ESD Rating - Human Body Model: Cla

4.4. mmun2211.pdf Size:441K _wietron

MMUN2211 Series COLLECTOR 3 Bias Resistor Transistor 3 BASE R1 NPN Silicon 1 R2 1 2 P b Lead(Pb)-Free 2 EMITTER SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit 50 Vdc Collector-Emitter Voltage VCEO Collector-Base Voltage 50 Vdc VCBO Collector Current-Continuous I 100 mAdc C THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Total Device Dissipation FR-5 Board (1) PD mW 246 T = 25°C A 1.6 mW / °C Derate above 25°C R 625 Thermal Resistance, Junction to Ambient (1) °C/W JA ? Junction and Storage,Temperature TJ,Tstg -65 to +150 °C 1. FR-4 @ minimun pad Device Marking and Resistor Values Device Marking R1(k) R2(k) Device Marking R1(k) R2(k) MMUN2211 A8A, 24 10 10 MMUN2232 A8J 4.7 4.7 MMUN2212 A8B 22 22 MMUN2233 A8K 4.7 47 MMUN2213 A8C, 26 47 47 MMUN2234 A8L 22 47 MMUN2214 A8D 10 47 MMUN2235 A8M 2.2 47 ? MMUN2238 A8R 2.2 ? MMUN2215 A8E 10 ? MMUN2216 A8F 4.7 MMUN2241 A8U 100 ? MMUN2230 A8G 1.0 1.0 MMUN2231 A8H 2.2 2.2 WEITRON

See also transistors datasheet: MT9002 , MT9003 , MTC35-300 , MUN2211LT1 , MUN2211LT2 , MUN2212LT1 , MUN2212LT2 , MUN2213LT1 , SS8050 , MUN2214LT1 , MUN2214LT2 , MUN2215LT1 , MUN2215LT2 , MUN2216LT1 , MUN2216LT2 , MUN2230LT1 , MUN2230LT2 .

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