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2N4914 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N4914

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 87

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 5

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of 2N4914 transistor: TO3

2N4914 Equivalent Transistors - Cross-Reference Search

2N4914 PDF doc:

1.1. 2n4904_2n4905_2n4906_2n4913_2n4914_2n4915.pdf Size:63K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.2. 2n4914.pdf Size:36K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4914 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·DC Current Gain- : hFE= 25-100 @IC= 2.5A ·Complement to Type 2N4905 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current-Continuous 5 A I Base Current-Continuous 1 A B P Collector Power Dissipation@T =25? 87.5 W C C T Junction Temperature 200 ? J Tstg Storage Temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ?/W isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4914 ELECTRICAL CHARACTERISTICS TC=25? unless

5.1. 2n4918_2n4919_2n4920.pdf Size:254K _motorola

Order this document MOTOROLA by 2N4918/D SEMICONDUCTOR TECHNICAL DATA 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp 3 AMPERE • Excellent Power Dissipation Due to Thermopad Construction — GENERAL–PURPOSE PD = 30 W @ TC = 25_C POWER TRANSISTORS • Excellent Safe Operating Area IIIIIIIIIIIIIIIIIIIIIII 40–80 VOLTS • Gain Specified to IC = 1.0 Amp 30 WATTS • Complement to NPN 2N4921, 2N4922, 2N4923 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII III III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII IIIIIIIIIII IIII IIII III III III III III III *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII IIIIIIIIIII IIII IIII IIIIIIIIIII IIII IIII III III III III III III III III III Ratings Symbol 2N4918 2N4919 2N49

5.2. 2n4918_2n4919_2n4920_2.pdf Size:63K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.3. 2n4918_2n4919_2n4920.pdf Size:113K _onsemi

ON Semiconductor) 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and amplifier *ON Semiconductor Preferred Device applications. These high–performance plastic devices feature: 3 AMPERE • Low Saturation Voltage — GENERAL–PURPOSE VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp POWER TRANSISTORS 40–80 VOLTS • Excellent Power Dissipation Due to Thermopad Construction — 30 WATTS PD = 30 W @ TC = 25_C • Excellent Safe Operating Area • Gain Specified to IC = 1.0 Amp • Complement to NPN 2N4921, 2N4922, 2N4923 IIIIIIIIIIIIIIIIIIIIIII *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII Ratings Symbol 2N4918III 2N4920III 2N4919 Unit IIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII STYLE 1: PIN 1. EMITTER Collector–Emitter Voltage VCEO 40 60IIIIVdc 80 IIIIIIIIIII IIII IIII III III III IIIIIIIIIII IIII III III III 3 2. COLLECTOR 2 1 3. BASE IIIIIIIIIII IIII IIII III III III IIIIIIIIIII IIII III III III Coll

5.4. 2n4910x_2n4911x_2n4912x.pdf Size:15K _semelab

2N4910X 2N4911X 2N4912X MECHANICAL DATA NPN EPITAXIAL Dimensions in mm (inches) POWER TRANSISTOR IN TO66 HERMETIC PACKAGE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS • SCREENING OPTIONS AVAILABE 1 2 • TO66 PACKAGE 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO–66 Metal Package. PIN 1 = BASE PIN 2 = EMITTER CASE = COLLECTOR ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 2N4910X 2N4911X 2N4912X V(BR)CBO Collector – Base Breakdown Voltage 40V 60V 80V V(BR)CEO Collector – Emitter Breakdown Voltage 40V 60V 80V V(BR)EBO Emitter – Base Breakdown Voltage 5V IC Continuous Collector Current 4A IB Base Current 1A PD Total Power Dissipation 25W TC Operating Case Temperature Range –65 to +200°C Tstg Storage Temperature Range –65 to +200°C R JC Thermal Resistance , Junction To Case 7.0°C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 4/98

5.5. 2n4915.pdf Size:36K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4915 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·DC Current Gain- : hFE= 25-100 @IC= 2.5A ·Complement to Type 2N4906 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current-Continuous 5 A I Base Current-Continuous 1 A B P Collector Power Dissipation@T =25? 87.5 W C C T Junction Temperature 200 ? J Tstg Storage Temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ?/W isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4915 ELECTRICAL CHARACTERISTICS TC=25? unless

5.6. 2n4918_2n4919_2n4920.pdf Size:118K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2N4921/4922/4923 Ў¤ Excellent safe operating area Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For driver circuits ,switching ,and amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER CHAN IN Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature VCBO SEMIC GE 2N4918 2N4919 Open emitter 2N4920 2N4918 2N4919 2N4920 Open base Open collector CONDITIONS O CTOR NDU VALUE -40 -60 -80 -40 -60 -80 -5 -1 -3 -1 UNIT V VCEO V VEBO IC ICM IB PD Tj Tstg V A A A W Ўж Ўж TC=25Ўж 30 150 -65~150 THERMAL CHARACTERISTICS SY

5.7. 2n4913.pdf Size:36K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4913 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·DC Current Gain- : hFE= 25-100 @IC= 2.5A ·Complement to Type 2N4904 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current-Continuous 5 A I Base Current-Continuous 1 A B P Collector Power Dissipation@T =25? 87.5 W C C T Junction Temperature 200 ? J Tstg Storage Temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ?/W isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4913 ELECTRICAL CHARACTERISTICS TC=25? unless

5.8. 2n4912.pdf Size:53K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4912 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 80V(Min) ·Low Collector Saturatioin Voltage: VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation ·Complement to Type 2N4900 APPLICATIONS ·Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 80 80 5 1 4 1 25 200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 7.0 UNIT /W isc Websitewww.iscsemi.cn

5.9. 2n4911.pdf Size:53K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4911 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation APPLICATIONS ·Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 1 A C I Collector Current-Peak 4 A CM IB Collector Current-Continuous 1 A Collector Power Dissipation P 25 W C @ T =25? C T Junction Temperature 200 ? J Tstg Storage Temperature Range -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 7.0 ?/W isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Pow

5.10. 2n4910.pdf Size:53K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4910 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 40V(Min) ·Low Collector Saturatioin Voltage: VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation APPLICATIONS ·Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 40 40 5 1 4 1 25 200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 7.0 UNIT /W isc Websitewww.iscsemi.cn

5.11. 2n4918.pdf Size:53K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N4918 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min) ·Low Collector Saturatioin Voltage- : VCE(sat)= -0.6V(Max.)@ IC= -1A ·Wide Area of Safe Operation ·Complement to Type 2N4921 APPLICATIONS ·Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -1 A C I Collector Current-Peak -3 A CM I Collector Current-Continuous -1 A B Collector Power Dissipation PC 30 W @ T =25? C TJ Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.16 ?/W isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Produ

See also transistors datasheet: 2N4910 , 2N4910-SM , 2N4911 , 2N4911-SM , 2N4912 , 2N4912-SM , 2N4912X , 2N4913 , 2SC5200 , 2N4915 , 2N4916 , 2N4917 , 2N4918 , 2N4919 , 2N4920 , 2N4921 , 2N4922 .

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