All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2N4923
  2N4923
  2N4923
 
2N4923
  2N4923
  2N4923
 
2N4923
  2N4923
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2N4923 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N4923 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N4923

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 30

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 3

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF: 100

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2N4923 transistor: TO126

2N4923 Equivalent Transistors - Cross-Reference Search

2N4923 PDF doc:

1.1. 2n4921_2n4922_2n4923.pdf Size:238K _motorola

2N4923
2N4923
Order this document MOTOROLA by 2N4921/D SEMICONDUCTOR TECHNICAL DATA 2N4921 Medium-Power Plastic NPN thru Silicon Transistors 2N4923 * . . . designed for driver circuits, switching, and amplifier applications. These highperformance plastic devices feature: *Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp 1 AMPERE Excellent Power Dissipation Due to Thermopad Construction GENERALPURPOSE PD = 30 W @ TC = 25_C POWER TRANSISTORS Excellent Safe Operating Area IIIIIIIIIIIIIIIIIIIIIII 4080 VOLTS Gain Specified to IC = 1.0 Amp 30 WATTS Complement to PNP 2N4918, 2N4919, 2N4920 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII IIIIIIIIIII III IIII IIII III III IIII III III *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII IIIIIIIIIII III IIII IIIIIIIIIII III IIII IIII III III IIII III III IIII III III Rating Symbol 2N4921 2N4922 2N492

1.2. 2n4921_2n4922_2n4923.pdf Size:90K _onsemi

2N4923
2N4923
2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction - PD = 30 W @ TC = 25_C GENERAL PURPOSE Excellent Safe Operating Area POWER TRANSISTORS Gain Specified to IC = 1.0 A 40-80 VOLTS, 30 WATTS Complement to PNP 2N4918, 2N4919, 2N4920 Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit IIIIIIIIIIII IIII III IIII Collector-Emitter Voltage 2N4921 VCEO 40 Vdc TO-225 2N4922 III 60 IIII IIIIIIIIIIII IIII CASE 77 2N4923 80 IIIIIIIIIIII IIII IIIIIIIIIIII IIII III IIII III IIII STYLE 1 Collector-Emitter Voltage 2N4921 VCB 40 Vdc 3 2 IIIIIIIIIIII IIII III IIII 2N4922 60 1 2N4923 80 IIIIIIIIIIII IIII IIIIIIIIIIII I

1.3. 2n4923.pdf Size:194K _cdil

2N4923
2N4923
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N4923 TO-126 E C B General Purpose Power Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION VALUE UNIT Collector -Base Voltage VCBO 80 V Collector -Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 3.0 A Base Current IB 1.0 A Power Dissipation @ Tc=25 deg C PD 30 W Derate Above 25 deg C 0.24 W/deg C Operating And Storage Junction Tj, Tstg -65 to +150 deg C Temperature Range Lead Temperature for Soldering 1/16" TL 260 deg C from Body for 10 Seconds. Thermal Resistance Junction to Case Rth (j-c) 4.16 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Emitter Sustaining Voltage VCEO(sus) IC=100mA, IB=0 80 - - V Collector Cut off Current ICEO VCE=40V, IB=0 - - 0.5 mA ICBO VCB=80V, IE=0 - - 0.1 mA ICEX VC

1.4. 2n4921_2n4922_2n4923.pdf Size:41K _jmnic

2N4923
2N4923
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION · ·With TO-126 package ·Complement to type 2N4918,2N4919 2N4920 ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N4921 40 VCBO Collector-base voltage 2N4922 Open emitter 60 V 2N4923 80 2N4921 40 VCEO Collector-emitter voltage 2N4922 Open base 60 V 2N4923 80 VEBO Emitter-base voltage Open collector 5 V IC Collector current 1 A ICM Collector current-Peak 3 A IB Base current 1 A PD Total power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 4.16 ?/W

1.5. 2n4921_2n4922_2n4923.pdf Size:118K _inchange_semiconductor

2N4923
2N4923
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2N4918/4919/4920 Ў¤ Excellent safe operating area Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For driver circuits ,switching ,and amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER CHAN IN Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature VCBO SEMIC GE 2N4921 2N4922 Open emitter 2N4923 2N4921 2N4922 2N4923 Open base Open collector CONDITIONS O CTOR NDU VALUE 40 60 80 40 60 80 5 1 3 1 UNIT V VCEO V VEBO IC ICM IB PD Tj Tstg V A A A W Ўж Ўж TC=25Ўж 30 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j

See also transistors datasheet: 2N4915 , 2N4916 , 2N4917 , 2N4918 , 2N4919 , 2N4920 , 2N4921 , 2N4922 , BC107 , 2N4924 , 2N4924S , 2N4925 , 2N4925S , 2N4926 , 2N4926S , 2N4927 , 2N4927S .

Keywords

 2N4923 Datasheet  2N4923 Datenblatt  2N4923 RoHS  2N4923 Distributor
 2N4923 Application Notes  2N4923 Component  2N4923 Circuit  2N4923 Schematic
 2N4923 Equivalent  2N4923 Cross Reference  2N4923 Data Sheet  2N4923 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com