2N4928 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N4928

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.6

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 6

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of 2N4928 transistor: TO5

2N4928 Equivalent Transistors - Cross-Reference Search

2N4928 PDF document for downloads:

1.1. 2n4928_2n4929_2n4930_2n4931.pdf Size:58K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.1. 2n4921_2n4922_2n4923.pdf Size:238K _motorola

Order this document MOTOROLA by 2N4921/D SEMICONDUCTOR TECHNICAL DATA 2N4921 Medium-Power Plastic NPN thru Silicon Transistors 2N4923 * . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp 1 AMPERE • Excellent Power Dissipation Due to Thermopad Construction — GENERAL–PURPOSE PD = 30 W @ TC = 25_C POWER TRANSISTORS • Excellent Safe Operating Area IIIIIIIIIIIIIIIIIIIIIII 40–80 VOLTS • Gain Specified to IC = 1.0 Amp 30 WATTS • Complement to PNP 2N4918, 2N4919, 2N4920 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII IIIIIIIIIII III IIII IIII III III IIII III III *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII IIIIIIIIIII III IIII IIIIIIIIIII III IIII IIII III III IIII III III IIII III III Rating Symbol 2N4921 2N4922 2N492

5.2. 2n4918_2n4919_2n4920.pdf Size:254K _motorola

Order this document MOTOROLA by 2N4918/D SEMICONDUCTOR TECHNICAL DATA 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp 3 AMPERE • Excellent Power Dissipation Due to Thermopad Construction — GENERAL–PURPOSE PD = 30 W @ TC = 25_C POWER TRANSISTORS • Excellent Safe Operating Area IIIIIIIIIIIIIIIIIIIIIII 40–80 VOLTS • Gain Specified to IC = 1.0 Amp 30 WATTS • Complement to NPN 2N4921, 2N4922, 2N4923 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII III III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII IIIIIIIIIII IIII IIII III III III III III III *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII IIIIIIIIIII IIII IIII IIIIIIIIIII IIII IIII III III III III III III III III III Ratings Symbol 2N4918 2N4919 2N49

5.3. 2n4918_2n4919_2n4920_2.pdf Size:63K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.4. 2n4921_2n4922_2n4923.pdf Size:90K _onsemi

2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE • Excellent Power Dissipation Due to Thermopad Construction - PD = 30 W @ TC = 25_C GENERAL PURPOSE • Excellent Safe Operating Area POWER TRANSISTORS • Gain Specified to IC = 1.0 A 40-80 VOLTS, 30 WATTS • Complement to PNP 2N4918, 2N4919, 2N4920 • Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit IIIIIIIIIIII IIII III IIII Collector-Emitter Voltage 2N4921 VCEO 40 Vdc TO-225 2N4922 III 60 IIII IIIIIIIIIIII IIII CASE 77 2N4923 80 IIIIIIIIIIII IIII IIIIIIIIIIII IIII III IIII III IIII STYLE 1 Collector-Emitter Voltage 2N4921 VCB 40 Vdc 3 2 IIIIIIIIIIII IIII III IIII 2N4922 60 1 2N4923 80 IIIIIIIIIIII IIII IIIIIIIIIIII I

5.5. 2n4918_2n4919_2n4920.pdf Size:113K _onsemi

ON Semiconductor) 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and amplifier *ON Semiconductor Preferred Device applications. These high–performance plastic devices feature: 3 AMPERE • Low Saturation Voltage — GENERAL–PURPOSE VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp POWER TRANSISTORS 40–80 VOLTS • Excellent Power Dissipation Due to Thermopad Construction — 30 WATTS PD = 30 W @ TC = 25_C • Excellent Safe Operating Area • Gain Specified to IC = 1.0 Amp • Complement to NPN 2N4921, 2N4922, 2N4923 IIIIIIIIIIIIIIIIIIIIIII *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII Ratings Symbol 2N4918III 2N4920III 2N4919 Unit IIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII STYLE 1: PIN 1. EMITTER Collector–Emitter Voltage VCEO 40 60IIIIVdc 80 IIIIIIIIIII IIII IIII III III III IIIIIIIIIII IIII III III III 3 2. COLLECTOR 2 1 3. BASE IIIIIIIIIII IIII IIII III III III IIIIIIIIIII IIII III III III Coll

5.6. 2n4924.pdf Size:11K _semelab

2N4924 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 100V dia. IC = 0.2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can be processed in accordance with the 0.74 (0.029) requirements of BS, CECC and JAN, 1.14 (0.045) 0.71 (0.028) JANTX, JANTXV and JANS specifications 0.86 (0.034) 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 100 V IC(CONT) 0.2 A hFE @ 10/0.15 (VCE / IC) 40 200 - ft 100M Hz PD 1 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without no

5.7. 2n4925.pdf Size:11K _semelab

2N4925 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 150V dia. IC = 0.2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can be processed in accordance with the 0.74 (0.029) requirements of BS, CECC and JAN, 1.14 (0.045) 0.71 (0.028) JANTX, JANTXV and JANS specifications 0.86 (0.034) 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 150 V IC(CONT) 0.2 A hFE @ 10/0.15 (VCE / IC) 40 200 - ft 100M Hz PD 1 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without no

5.8. 2n4921_2n4922_2n4923.pdf Size:118K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2N4918/4919/4920 Ў¤ Excellent safe operating area Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For driver circuits ,switching ,and amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER CHAN IN Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature VCBO SEMIC GE 2N4921 2N4922 Open emitter 2N4923 2N4921 2N4922 2N4923 Open base Open collector CONDITIONS O CTOR NDU VALUE 40 60 80 40 60 80 5 1 3 1 UNIT V VCEO V VEBO IC ICM IB PD Tj Tstg V A A A W Ўж Ўж TC=25Ўж 30 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j

5.9. 2n4918_2n4919_2n4920.pdf Size:118K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2N4921/4922/4923 Ў¤ Excellent safe operating area Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For driver circuits ,switching ,and amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER CHAN IN Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature VCBO SEMIC GE 2N4918 2N4919 Open emitter 2N4920 2N4918 2N4919 2N4920 Open base Open collector CONDITIONS O CTOR NDU VALUE -40 -60 -80 -40 -60 -80 -5 -1 -3 -1 UNIT V VCEO V VEBO IC ICM IB PD Tj Tstg V A A A W Ўж Ўж TC=25Ўж 30 150 -65~150 THERMAL CHARACTERISTICS SY

See also transistors datasheet: 2N4924 , 2N4924S , 2N4925 , 2N4925S , 2N4926 , 2N4926S , 2N4927 , 2N4927S , C102 , 2N4928S , 2N4929 , 2N4929S , 2N4930 , 2N4930S , 2N4931 , 2N4931S , 2N4932 .

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