NB012FV Transistor Datasheet. Parameters and Characteristics.

Type Designator: NB012FV

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.6

Maximum collector-base voltage |Ucb|, V: 55

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.03

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 3

Forward current transfer ratio (hFE), min: 450

Noise Figure, dB: -

Package of NB012FV transistor: TO92

NB012FV Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: NB012EZ , NB012F , NB012FI , NB012FJ , NB012FK , NB012FL , NB012FT , NB012FU , 2N2222A , NB012FY , NB012FZ , NB012H , NB012HI , NB012HJ , NB012HK , NB012HL , NB012HT .

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