NB012FZ
Transistor Datasheet. Parameters and Characteristics. Type Designator: NB012FZ
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.6
Maximum collector-base voltage |Ucb|, V: 55
Maximum collector-emitter voltage |Uce|, V: 50
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.03
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF: 3
Forward current transfer ratio (hFE), min: 300
Noise Figure, dB: - Package of NB012FZ
transistor: TO92
NB012FZ
Equivalent Transistors - Cross-Reference Search NB012FZ
PDF document for downloads: PDF unavailable! See also transistors datasheet: NB012FI
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. Keywords| NB012FZ
Datasheet | NB012FZ
Datenblatt | NB012FZ
RoHS | NB012FZ
Distributor | | NB012FZ
Application Notes | NB012FZ
Component | NB012FZ
Circuit | NB012FZ
Schematic | | NB012FZ
Equivalent | NB012FZ
Cross Reference | NB012FZ
Data Sheet | NB012FZ
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