NB022ET Transistor Datasheet. Parameters and Characteristics.

Type Designator: NB022ET

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.6

Maximum collector-base voltage |Ucb|, V: 55

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.03

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 6

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of NB022ET transistor: TO92

NB022ET Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: NB021HV , NB021HY , NB021HZ , NB022E , NB022EI , NB022EJ , NB022EK , NB022EL , BC148 , NB022EU , NB022EV , NB022EY , NB022EZ , NB022F , NB022FI , NB022FJ , NB022FK .

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