NB111FH Transistor Datasheet. Parameters and Characteristics.

Type Designator: NB111FH

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.6

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 35

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 6

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of NB111FH transistor: TO92

NB111FH Equivalent Transistors - Cross-Reference Search

NB111FH PDF document for downloads:

PDF unavailable!

See also transistors datasheet: NB024HY , NB024HZ , NB111E , NB111EH , NB111EI , NB111EJ , NB111EY , NB111F , BD139 , NB111FI , NB111FJ , NB111FY , NB111H , NB111HH , NB111HI , NB111HJ , NB111HY .

Keywords