NB113FJ Transistor Datasheet. Parameters and Characteristics.

Type Designator: NB113FJ

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.6

Maximum collector-base voltage |Ucb|, V: 70

Maximum collector-emitter voltage |Uce|, V: 65

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 4

Forward current transfer ratio (hFE), min: 200

Noise Figure, dB: -

Package of NB113FJ transistor: TO92

NB113FJ Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: NB113E , NB113EH , NB113EI , NB113EJ , NB113EY , NB113F , NB113FH , NB113FI , P605 , NB113FY , NB113H , NB113HH , NB113HI , NB113HJ , NB113HY , NB121E , NB121EH .

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